JP2012033666A - 太陽電池の製造方法及び太陽電池 - Google Patents
太陽電池の製造方法及び太陽電池 Download PDFInfo
- Publication number
- JP2012033666A JP2012033666A JP2010171340A JP2010171340A JP2012033666A JP 2012033666 A JP2012033666 A JP 2012033666A JP 2010171340 A JP2010171340 A JP 2010171340A JP 2010171340 A JP2010171340 A JP 2010171340A JP 2012033666 A JP2012033666 A JP 2012033666A
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- type
- layer
- type surface
- amorphous semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 238000007747 plating Methods 0.000 claims abstract description 16
- 238000009713 electroplating Methods 0.000 claims abstract description 4
- 239000004065 semiconductor Substances 0.000 claims description 156
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 description 20
- 239000010408 film Substances 0.000 description 17
- 238000010248 power generation Methods 0.000 description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 244000126211 Hericium coralloides Species 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
【解決手段】一主面と他主面とを有し、一主面の一の領域及び他の領域に夫々露出するp型表面及びn型表面を有する太陽電池基板20を形成する。p型表面上及びn型表面上に夫々シード層を電気的に分離された状態で形成する。電解メッキ法を用いてp型表面上及びn型表面上のシード層上に、夫々めっき膜を形成する。
【選択図】図2
Description
(太陽電池1の構成)
まず、本実施形態において製造される太陽電池1の構成について、図1及び図2を参照しながら詳細に説明する。
10…半導体基板
10a…受光面
10b…裏面
11…光
12…IN積層体
12i…i型非晶質半導体層
12n…n型非晶質半導体層
13…IP積層体
13i…i型非晶質半導体層
13p…p型非晶質半導体層
14…n側電極
15…p側電極
14A,15A…バスバー
14B,15B…フィンガー
16…絶縁層
17i…i型非晶質半導体層
17n…n型非晶質半導体層
18…絶縁層
19a…第1の導電層
19b…第2の導電層
19b1…第1のシード層
19b2…第2のシード層
19c…第3の導電層
19d…第4の導電層
19cd1…第1のめっき膜
19cd2…第2のめっき膜
20…太陽電池基板
21…i型非晶質半導体層
22…n型非晶質半導体層
23…絶縁層
24…i型非晶質半導体層
25…p型非晶質半導体層
26,27…導電層
30…非晶質半導体基板
30b…裏面
31n…n+型領域
Claims (10)
- 一主面と他主面とを有し、前記一主面の一の領域及び他の領域に夫々露出するp型表面及びn型表面を有する太陽電池基板を形成する工程と、
前記p型表面上及びn型表面上に夫々シード層を電気的に分離された状態で形成する工程と、
電解メッキ法を用いて前記p型表面上及びn型表面上のシード層上に、夫々めっき膜を形成する工程と、
を有する太陽電池の製造方法。 - 前記p型表面上及びn型表面上のシード層に、同一の電源を用いて電流を供給することを特徴とする請求項1に記載の太陽電池の製造方法。
- 前記p型表面上及びn型表面上に夫々シード層を電気的に分離された状態で形成する工程は、前記p型表面上及びn型表面上に連なるように金属層を形成し、次いで電気的に分離する工程を含むことを特徴とする請求項1または2に記載の太陽電池の製造方法。
- 前記太陽電池基板は一導電型の半導体基板を有し、
前記p型表面及びn型表面のうち前記半導体基板と同じ導電型を有する表面上に絶縁層を形成する工程を備え、
前記絶縁層上を含んで前記p側表面上及びn側表面上に連なるように前記金属層を形成し、次いで前記絶縁層上で前記金属層を除去することにより電気的に分離された前記シード層を形成することを特徴とする請求項1乃至3のいずれか一項に記載の太陽電池の製造方法。 - 前記p型表面及び前記n型表面のうち面積の大きい一方の表面上に形成する前記めっき膜の厚みを、他方の表面上に形成する前記めっき膜の厚みより大きくすることを特徴とする請求項1乃至4のいずれか一項に記載の太陽電池の製造方法。
- 前記太陽電池基板の前記他主面は受光面である請求項1乃至5のいずれか一項に記載の太陽電池の製造方法。
- 前記太陽電池基板は、前記他主面にパッシベーション膜を有することを特徴とする請求項6に記載の太陽電池の製造方法。
- 一主面と他主面とを有し、前記一主面の一の領域及び他の領域に夫々露出するp型表面及びn型表面を有する太陽電池基板と、
前記p型表面上及びn型表面上にそれぞれ形成された電極層と、を有し、
前記p型表面及び前記n型表面のうち面積の大きい一方の表面上に形成された電極の厚みは、他方の表面上に形成された電極の厚みよりも大きいことを特徴とする太陽電池。 - 前記他主面は受光面である請求項8に記載の太陽電池。
- 前記他主面に、パッシベーション膜を有することを特徴とする請求項8に記載の太陽電池。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010171340A JP5485062B2 (ja) | 2010-07-30 | 2010-07-30 | 太陽電池の製造方法及び太陽電池 |
EP11812572.3A EP2600414A4 (en) | 2010-07-30 | 2011-07-28 | METHOD FOR MANUFACTURING SOLAR CELL AND SOLAR CELL |
PCT/JP2011/067281 WO2012014983A1 (ja) | 2010-07-30 | 2011-07-28 | 太陽電池の製造方法及び太陽電池 |
US13/751,349 US10134940B2 (en) | 2010-07-30 | 2013-01-28 | Method of manufacturing solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010171340A JP5485062B2 (ja) | 2010-07-30 | 2010-07-30 | 太陽電池の製造方法及び太陽電池 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012033666A true JP2012033666A (ja) | 2012-02-16 |
JP5485062B2 JP5485062B2 (ja) | 2014-05-07 |
Family
ID=45530183
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010171340A Expired - Fee Related JP5485062B2 (ja) | 2010-07-30 | 2010-07-30 | 太陽電池の製造方法及び太陽電池 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10134940B2 (ja) |
EP (1) | EP2600414A4 (ja) |
JP (1) | JP5485062B2 (ja) |
WO (1) | WO2012014983A1 (ja) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012132838A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 光電変換装置の製造方法 |
WO2012132654A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 裏面接合型の光電変換素子及び裏面接合型の光電変換素子の製造方法 |
WO2012132835A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 太陽電池 |
WO2012132655A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 裏面接合型の光電変換素子及び裏面接合型の光電変換素子の製造方法 |
WO2014068965A1 (ja) * | 2012-10-31 | 2014-05-08 | 三洋電機株式会社 | 太陽電池 |
JP2015053424A (ja) * | 2013-09-09 | 2015-03-19 | 三洋電機株式会社 | 太陽電池 |
EP2851963A1 (en) | 2013-09-24 | 2015-03-25 | Sanyo Electric Co., Ltd | Solar cell |
DE102015209291A1 (de) | 2014-05-26 | 2015-11-26 | Panasonic Intellectual Property Management Co., Ltd. | Verfahren zur Herstellung einer Solarzelle und Solarzelle |
DE102015209668A1 (de) | 2014-05-30 | 2015-12-03 | Panasonic Intellectual Property Management Co., Ltd. | Solarzelle |
JPWO2016143698A1 (ja) * | 2015-03-11 | 2017-12-21 | シャープ株式会社 | 光電変換素子 |
WO2018181499A1 (ja) * | 2017-03-31 | 2018-10-04 | 株式会社カネカ | 光電変換素子及び光電変換素子の製造方法 |
JP2023123356A (ja) * | 2022-02-24 | 2023-09-05 | 広東愛旭科技有限公司 | 背面接触電池の電極構造、電池、モジュール及び電池システム |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015118935A1 (ja) * | 2014-02-10 | 2015-08-13 | シャープ株式会社 | 光電変換素子およびそれを備えた太陽電池モジュール |
JP6665166B2 (ja) * | 2015-03-31 | 2020-03-13 | 株式会社カネカ | 太陽電池モジュールおよびその製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005260157A (ja) * | 2004-03-15 | 2005-09-22 | Sharp Corp | 太陽電池セルおよび太陽電池モジュール |
JP2009200267A (ja) * | 2008-02-21 | 2009-09-03 | Sanyo Electric Co Ltd | 太陽電池 |
JP2009540584A (ja) * | 2006-06-10 | 2009-11-19 | ヘルムホルツ−ツェントルム ベルリン フュア マテリアリーエン ウント エネルギー ゲゼルシャフト ミット ベシュレンクテル ハフツング | スルーコンタクトを備えた片面接触型の太陽電池および太陽電池の製造方法 |
JP2010123859A (ja) * | 2008-11-21 | 2010-06-03 | Kyocera Corp | 太陽電池素子および太陽電池素子の製造方法 |
JP2010147324A (ja) * | 2008-12-19 | 2010-07-01 | Kyocera Corp | 太陽電池素子および太陽電池素子の製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7388147B2 (en) * | 2003-04-10 | 2008-06-17 | Sunpower Corporation | Metal contact structure for solar cell and method of manufacture |
FR2880989B1 (fr) * | 2005-01-20 | 2007-03-09 | Commissariat Energie Atomique | Dispositif semi-conducteur a heterojonctions et a structure inter-digitee |
US7799182B2 (en) * | 2006-12-01 | 2010-09-21 | Applied Materials, Inc. | Electroplating on roll-to-roll flexible solar cell substrates |
WO2009052511A2 (en) * | 2007-10-18 | 2009-04-23 | Belano Holdings, Ltd. | Mono-silicon solar cells |
DE102008030880A1 (de) | 2007-12-11 | 2009-06-18 | Institut Für Solarenergieforschung Gmbh | Rückkontaktsolarzelle mit großflächigen Rückseiten-Emitterbereichen und Herstellungsverfahren hierfür |
EP2239788A4 (en) * | 2008-01-30 | 2017-07-12 | Kyocera Corporation | Solar battery element and solar battery element manufacturing method |
DE102008013446A1 (de) * | 2008-02-15 | 2009-08-27 | Ersol Solar Energy Ag | Verfahren zur Herstellung monokristalliner n-Silizium-Solarzellen sowie Solarzelle, hergestellt nach einem derartigen Verfahren |
DE102008028104A1 (de) * | 2008-06-13 | 2009-12-24 | Deutsche Cell Gmbh | Metallisierungsverfahren für Solarzellen |
US8242354B2 (en) * | 2008-12-04 | 2012-08-14 | Sunpower Corporation | Backside contact solar cell with formed polysilicon doped regions |
US8409911B2 (en) * | 2009-02-24 | 2013-04-02 | Sunpower Corporation | Methods for metallization of solar cells |
EP2395554A3 (en) * | 2010-06-14 | 2015-03-11 | Imec | Fabrication method for interdigitated back contact photovoltaic cells |
-
2010
- 2010-07-30 JP JP2010171340A patent/JP5485062B2/ja not_active Expired - Fee Related
-
2011
- 2011-07-28 WO PCT/JP2011/067281 patent/WO2012014983A1/ja active Application Filing
- 2011-07-28 EP EP11812572.3A patent/EP2600414A4/en not_active Withdrawn
-
2013
- 2013-01-28 US US13/751,349 patent/US10134940B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005260157A (ja) * | 2004-03-15 | 2005-09-22 | Sharp Corp | 太陽電池セルおよび太陽電池モジュール |
JP2009540584A (ja) * | 2006-06-10 | 2009-11-19 | ヘルムホルツ−ツェントルム ベルリン フュア マテリアリーエン ウント エネルギー ゲゼルシャフト ミット ベシュレンクテル ハフツング | スルーコンタクトを備えた片面接触型の太陽電池および太陽電池の製造方法 |
JP2009200267A (ja) * | 2008-02-21 | 2009-09-03 | Sanyo Electric Co Ltd | 太陽電池 |
JP2010123859A (ja) * | 2008-11-21 | 2010-06-03 | Kyocera Corp | 太陽電池素子および太陽電池素子の製造方法 |
JP2010147324A (ja) * | 2008-12-19 | 2010-07-01 | Kyocera Corp | 太陽電池素子および太陽電池素子の製造方法 |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012132654A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 裏面接合型の光電変換素子及び裏面接合型の光電変換素子の製造方法 |
WO2012132835A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 太陽電池 |
WO2012132655A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 裏面接合型の光電変換素子及び裏面接合型の光電変換素子の製造方法 |
WO2012132838A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 光電変換装置の製造方法 |
WO2014068965A1 (ja) * | 2012-10-31 | 2014-05-08 | 三洋電機株式会社 | 太陽電池 |
JPWO2014068965A1 (ja) * | 2012-10-31 | 2016-09-08 | パナソニックIpマネジメント株式会社 | 太陽電池 |
JP2015053424A (ja) * | 2013-09-09 | 2015-03-19 | 三洋電機株式会社 | 太陽電池 |
EP2851963A1 (en) | 2013-09-24 | 2015-03-25 | Sanyo Electric Co., Ltd | Solar cell |
US9780241B2 (en) | 2013-09-24 | 2017-10-03 | Panasonic Intellectual Property Management Co., Ltd. | Solar cell |
US10546969B2 (en) | 2014-05-26 | 2020-01-28 | Panasonic Intellectual Property Management Co., Ltd. | Method of manufacturing solar cell and solar cell |
DE102015209291A1 (de) | 2014-05-26 | 2015-11-26 | Panasonic Intellectual Property Management Co., Ltd. | Verfahren zur Herstellung einer Solarzelle und Solarzelle |
DE102015209668A1 (de) | 2014-05-30 | 2015-12-03 | Panasonic Intellectual Property Management Co., Ltd. | Solarzelle |
US10026853B2 (en) | 2014-05-30 | 2018-07-17 | Panasonic Intellectual Property Management Co., Ltd. | Solar cell |
JPWO2016143698A1 (ja) * | 2015-03-11 | 2017-12-21 | シャープ株式会社 | 光電変換素子 |
WO2018181499A1 (ja) * | 2017-03-31 | 2018-10-04 | 株式会社カネカ | 光電変換素子及び光電変換素子の製造方法 |
JPWO2018181499A1 (ja) * | 2017-03-31 | 2019-11-07 | 株式会社カネカ | 光電変換素子及び光電変換素子の製造方法 |
JP2023123356A (ja) * | 2022-02-24 | 2023-09-05 | 広東愛旭科技有限公司 | 背面接触電池の電極構造、電池、モジュール及び電池システム |
JP7401700B2 (ja) | 2022-02-24 | 2023-12-19 | 広東愛旭科技有限公司 | 背面接触電池の電極構造、電池、モジュール及び電池システム |
Also Published As
Publication number | Publication date |
---|---|
EP2600414A1 (en) | 2013-06-05 |
EP2600414A4 (en) | 2014-10-22 |
WO2012014983A1 (ja) | 2012-02-02 |
JP5485062B2 (ja) | 2014-05-07 |
US10134940B2 (en) | 2018-11-20 |
US20130180585A1 (en) | 2013-07-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5485062B2 (ja) | 太陽電池の製造方法及び太陽電池 | |
JP5485060B2 (ja) | 太陽電池の製造方法 | |
JP6351601B2 (ja) | 電気めっき金属グリッドを用いた光起電力装置 | |
JP5334926B2 (ja) | 太陽電池の製造方法 | |
JP5705968B2 (ja) | 光電変換装置及びその製造方法 | |
JP5879515B2 (ja) | 太陽電池の製造方法 | |
JP5388970B2 (ja) | 太陽電池の製造方法 | |
JP2013219065A (ja) | 太陽電池及び太陽電池の製造方法 | |
JPWO2012132838A1 (ja) | 光電変換装置の製造方法 | |
JP2013030615A (ja) | 太陽電池 | |
WO2012132835A1 (ja) | 太陽電池 | |
JP6425195B2 (ja) | 太陽電池 | |
JP2019121627A (ja) | 太陽電池セルの製造方法及び太陽電池セル | |
JP5820987B2 (ja) | 太陽電池 | |
WO2012090650A1 (ja) | 太陽電池 | |
WO2012132614A1 (ja) | 光電変換装置 | |
WO2012132834A1 (ja) | 太陽電池及び太陽電池の製造方法 | |
WO2014016931A1 (ja) | 太陽電池及びその製造方法 | |
KR101212492B1 (ko) | 태양전지 셀의 제조 방법 | |
WO2012132932A1 (ja) | 太陽電池及び太陽電池の製造方法 | |
JP6206843B2 (ja) | 太陽電池 | |
JP2013243171A (ja) | 結晶シリコン系太陽電池 | |
JPWO2017056370A1 (ja) | 太陽電池セルおよび太陽電池セルの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130312 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130702 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130821 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140121 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140219 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5485062 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |