JP2012028476A - 発光装置の製造方法 - Google Patents

発光装置の製造方法 Download PDF

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Publication number
JP2012028476A
JP2012028476A JP2010164409A JP2010164409A JP2012028476A JP 2012028476 A JP2012028476 A JP 2012028476A JP 2010164409 A JP2010164409 A JP 2010164409A JP 2010164409 A JP2010164409 A JP 2010164409A JP 2012028476 A JP2012028476 A JP 2012028476A
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Japan
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layer
superlattice structure
ingan
side contact
thickness
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JP2010164409A
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Japanese (ja)
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JP2012028476A5 (enrdf_load_stackoverflow
Inventor
Tatsuya Miyoshi
達也 三好
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Nichia Chemical Industries Ltd
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Nichia Chemical Industries Ltd
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Priority to JP2010164409A priority Critical patent/JP2012028476A/ja
Publication of JP2012028476A publication Critical patent/JP2012028476A/ja
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JP2010164409A 2010-07-22 2010-07-22 発光装置の製造方法 Pending JP2012028476A (ja)

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JP2010164409A JP2012028476A (ja) 2010-07-22 2010-07-22 発光装置の製造方法

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JP2010164409A JP2012028476A (ja) 2010-07-22 2010-07-22 発光装置の製造方法

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JP2012028476A true JP2012028476A (ja) 2012-02-09
JP2012028476A5 JP2012028476A5 (enrdf_load_stackoverflow) 2013-06-20

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012043982A (ja) * 2010-08-19 2012-03-01 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2013187484A (ja) * 2012-03-09 2013-09-19 Sharp Corp 窒化物半導体発光素子およびその製造方法
WO2013187171A1 (ja) * 2012-06-13 2013-12-19 シャープ株式会社 窒化物半導体発光素子及びその製造方法
JP2014146684A (ja) * 2013-01-29 2014-08-14 Stanley Electric Co Ltd 半導体発光素子及びその製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11330554A (ja) * 1998-03-12 1999-11-30 Nichia Chem Ind Ltd 窒化物半導体素子
JP2002299685A (ja) * 2001-03-29 2002-10-11 Lumileds Lighting Us Llc Ｉｉｉ族窒化物デバイスのための窒化ガリウムインジウム平滑構造
JP2007019526A (ja) * 2006-08-11 2007-01-25 Rohm Co Ltd 窒化物半導体素子の製法
JP2007059913A (ja) * 2005-08-25 2007-03-08 Samsung Electro Mech Co Ltd 窒化物半導体発光素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11330554A (ja) * 1998-03-12 1999-11-30 Nichia Chem Ind Ltd 窒化物半導体素子
JP2002299685A (ja) * 2001-03-29 2002-10-11 Lumileds Lighting Us Llc Ｉｉｉ族窒化物デバイスのための窒化ガリウムインジウム平滑構造
JP2007059913A (ja) * 2005-08-25 2007-03-08 Samsung Electro Mech Co Ltd 窒化物半導体発光素子
JP2007019526A (ja) * 2006-08-11 2007-01-25 Rohm Co Ltd 窒化物半導体素子の製法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012043982A (ja) * 2010-08-19 2012-03-01 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2013187484A (ja) * 2012-03-09 2013-09-19 Sharp Corp 窒化物半導体発光素子およびその製造方法
WO2013187171A1 (ja) * 2012-06-13 2013-12-19 シャープ株式会社 窒化物半導体発光素子及びその製造方法
TWI493753B (zh) * 2012-06-13 2015-07-21 Sharp Kk Nitride semiconductor light emitting device and manufacturing method thereof
JPWO2013187171A1 (ja) * 2012-06-13 2016-02-04 シャープ株式会社 窒化物半導体発光素子及びその製造方法
CN104364917B (zh) * 2012-06-13 2017-03-15 夏普株式会社 氮化物半导体发光元件及其制造方法
US9620671B2 (en) 2012-06-13 2017-04-11 Sharp Kabushiki Kaisha Nitride semiconductor light emitting element and method for manufacturing same
JP2014146684A (ja) * 2013-01-29 2014-08-14 Stanley Electric Co Ltd 半導体発光素子及びその製造方法

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