JP2012023351A5 - - Google Patents

Download PDF

Info

Publication number
JP2012023351A5
JP2012023351A5 JP2011132820A JP2011132820A JP2012023351A5 JP 2012023351 A5 JP2012023351 A5 JP 2012023351A5 JP 2011132820 A JP2011132820 A JP 2011132820A JP 2011132820 A JP2011132820 A JP 2011132820A JP 2012023351 A5 JP2012023351 A5 JP 2012023351A5
Authority
JP
Japan
Prior art keywords
cell
photoelectric conversion
electrode
junction
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011132820A
Other languages
English (en)
Japanese (ja)
Other versions
JP5753445B2 (ja
JP2012023351A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2011132820A priority Critical patent/JP5753445B2/ja
Priority claimed from JP2011132820A external-priority patent/JP5753445B2/ja
Publication of JP2012023351A publication Critical patent/JP2012023351A/ja
Publication of JP2012023351A5 publication Critical patent/JP2012023351A5/ja
Application granted granted Critical
Publication of JP5753445B2 publication Critical patent/JP5753445B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2011132820A 2010-06-18 2011-06-15 光電変換装置 Expired - Fee Related JP5753445B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011132820A JP5753445B2 (ja) 2010-06-18 2011-06-15 光電変換装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010138889 2010-06-18
JP2010138889 2010-06-18
JP2011132820A JP5753445B2 (ja) 2010-06-18 2011-06-15 光電変換装置

Publications (3)

Publication Number Publication Date
JP2012023351A JP2012023351A (ja) 2012-02-02
JP2012023351A5 true JP2012023351A5 (enExample) 2014-06-26
JP5753445B2 JP5753445B2 (ja) 2015-07-22

Family

ID=45327572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011132820A Expired - Fee Related JP5753445B2 (ja) 2010-06-18 2011-06-15 光電変換装置

Country Status (2)

Country Link
US (1) US9048356B2 (enExample)
JP (1) JP5753445B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10685983B2 (en) 2016-11-11 2020-06-16 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
WO2020004475A1 (ja) * 2018-06-29 2020-01-02 国立研究開発法人産業技術総合研究所 多接合光電変換素子及び多接合太陽電池
JP6818208B1 (ja) * 2020-08-01 2021-01-20 良昭 萩原 光電変換半導体装置

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4272641A (en) * 1979-04-19 1981-06-09 Rca Corporation Tandem junction amorphous silicon solar cells
US4316049A (en) 1979-08-28 1982-02-16 Rca Corporation High voltage series connected tandem junction solar battery
US4496788A (en) 1982-12-29 1985-01-29 Osaka Transformer Co., Ltd. Photovoltaic device
US4950614A (en) 1984-05-15 1990-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of making a tandem type semiconductor photoelectric conversion device
US4878097A (en) 1984-05-15 1989-10-31 Eastman Kodak Company Semiconductor photoelectric conversion device and method for making same
US4680422A (en) 1985-10-30 1987-07-14 The Boeing Company Two-terminal, thin film, tandem solar cells
US4684761A (en) 1986-04-09 1987-08-04 The Boeing Company Method for making graded I-III-VI2 semiconductors and solar cell obtained thereby
JP3048732B2 (ja) 1991-11-25 2000-06-05 三洋電機株式会社 光起電力装置
US5656098A (en) 1992-03-03 1997-08-12 Canon Kabushiki Kaisha Photovoltaic conversion device and method for producing same
US5248349A (en) 1992-05-12 1993-09-28 Solar Cells, Inc. Process for making photovoltaic devices and resultant product
US5668050A (en) 1994-04-28 1997-09-16 Canon Kabushiki Kaisha Solar cell manufacturing method
ES2197971T3 (es) 1996-01-10 2004-01-16 Canon Kabushiki Kaisha Modulo de celula solar con cubierta superficial especifica con buenas caracteristicas de resistencia a humedad y transparencia.
US5720827A (en) 1996-07-19 1998-02-24 University Of Florida Design for the fabrication of high efficiency solar cells
US6166320A (en) * 1998-03-19 2000-12-26 Toyota Jidosha Kabushiki Kaisha Tandem solar cell
JP3368854B2 (ja) * 1998-12-25 2003-01-20 トヨタ自動車株式会社 太陽電池
JP3368822B2 (ja) * 1998-03-19 2003-01-20 トヨタ自動車株式会社 太陽電池
JP2001160540A (ja) 1999-09-22 2001-06-12 Canon Inc 半導体装置の製造方法、液相成長法及び液相成長装置、太陽電池
US6677062B2 (en) 2000-07-19 2004-01-13 Matsushita Electric Industrial Co., Ltd. Substrate with an electrode and method of producing the same
US6930025B2 (en) 2001-02-01 2005-08-16 Canon Kabushiki Kaisha Transparent conductive film formation process, photovoltaic device production process, transparent conductive film, and photovoltaic device
JP4560245B2 (ja) 2001-06-29 2010-10-13 キヤノン株式会社 光起電力素子
JP5010468B2 (ja) * 2005-03-24 2012-08-29 京セラ株式会社 光電変換素子とその製造方法、及びこれを用いた光電変換モジュール
US7750425B2 (en) 2005-12-16 2010-07-06 The Trustees Of Princeton University Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier
TWI452703B (zh) 2007-11-16 2014-09-11 半導體能源研究所股份有限公司 光電轉換裝置及其製造方法
US20090139558A1 (en) 2007-11-29 2009-06-04 Shunpei Yamazaki Photoelectric conversion device and manufacturing method thereof
EP2075850A3 (en) 2007-12-28 2011-08-24 Semiconductor Energy Laboratory Co, Ltd. Photoelectric conversion device and manufacturing method thereof
EP2105972A3 (en) 2008-03-28 2015-06-10 Semiconductor Energy Laboratory Co, Ltd. Photoelectric conversion device and method for manufacturing the same
US8338218B2 (en) 2008-06-26 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device module and manufacturing method of the photoelectric conversion device module
JP2010114299A (ja) * 2008-11-07 2010-05-20 Mitsubishi Heavy Ind Ltd 光電変換装置の製造方法及び光電変換装置
WO2010140539A1 (en) 2009-06-05 2010-12-09 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
WO2010140522A1 (en) 2009-06-05 2010-12-09 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
US8704083B2 (en) 2010-02-11 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and fabrication method thereof
US9076909B2 (en) 2010-06-18 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
TWI514599B (zh) 2010-06-18 2015-12-21 Semiconductor Energy Lab 光電轉換裝置及其製造方法

Similar Documents

Publication Publication Date Title
JP2010283339A5 (ja) 光電変換装置
MY206809A (en) Solar cell emitter region fabrication with differentiated p-type and n-type region architectures
JP2009200267A5 (enExample)
JP2010212671A5 (ja) 半導体装置
JP2011003608A5 (enExample)
JP2011129898A5 (ja) 半導体装置
JP2011129899A5 (ja) 半導体装置
JP2014099429A5 (enExample)
JP2011086927A5 (ja) 半導体装置
JP2014082388A5 (enExample)
JP2011054949A5 (ja) 半導体装置
JP2010232651A5 (ja) 液晶表示装置
JP2012235107A5 (ja) 半導体装置
JP2013211537A5 (enExample)
JP2009231824A5 (ja) 半導体装置
JP2010177264A5 (enExample)
JP2012147013A5 (ja) 表示装置
JP2011014892A5 (enExample)
JP2011119714A5 (ja) 半導体装置
JP2010219511A5 (ja) 半導体装置
JP2011009595A5 (ja) 半導体装置
JP2013089613A5 (ja) 半導体装置
JP2012253293A5 (enExample)
JP2013077513A5 (enExample)
JP2011233221A5 (ja) 半導体装置