JP2012015287A - 半導体モジュールの製造方法 - Google Patents
半導体モジュールの製造方法 Download PDFInfo
- Publication number
- JP2012015287A JP2012015287A JP2010149662A JP2010149662A JP2012015287A JP 2012015287 A JP2012015287 A JP 2012015287A JP 2010149662 A JP2010149662 A JP 2010149662A JP 2010149662 A JP2010149662 A JP 2010149662A JP 2012015287 A JP2012015287 A JP 2012015287A
- Authority
- JP
- Japan
- Prior art keywords
- cooling plate
- sprayed
- semiconductor module
- semiconductor chip
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/30—Structure, shape, material or disposition of the layer connectors prior to the connecting process of a plurality of layer connectors
- H01L2224/301—Disposition
- H01L2224/3018—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/30181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73215—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/30—Structure, shape, material or disposition of the layer connectors prior to the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13054—Darlington transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
【解決手段】冷却プレート18の表面に溶射絶縁膜16と溶射アルミ膜17とを成膜したのち、溶射アルミ膜17と冷却プレート18を電極として、これらの間に電流が流れるかを検査する。これにより、溶射アルミ膜17と冷却プレート18との間の絶縁が行えているか否かを検査できるため、樹脂モールド部19によるモールド化を行う前に、絶縁検査工程を行うことが可能となる。したがって、樹脂モールドの前の段階で絶縁不良の検査である絶縁検査工程を行うことができる半導体モジュールの製造方法とすることが可能となる。
【選択図】図2
Description
本発明の第1実施形態について説明する。本実施形態では、本発明の一実施形態にかかる半導体モジュールの適用例として、三相モータ駆動用のインバータを例に挙げて説明する。
本発明の第2実施形態について説明する。本実施形態の半導体モジュール10は、第1実施形態に対して銅ブロック12を無くしたものであり、その他に関しては第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
本発明の第3実施形態について説明する。本実施形態の半導体モジュール10は、第1実施形態に対して冷却プレート18の構成を変更したものであり、その他に関しては第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
本発明の第4実施形態について説明する。本実施形態の半導体モジュール10は、第1実施形態に対して冷却プレート18の構成およびその形成方法を変更したものであり、その他に関しては第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
上記第4実施形態では、第1実施形態に示す銅ブロック12がある構造において、冷却フィン18bを樹脂モールド後に接続する場合について説明したが、第2実施形態に示す銅ブロック12が無い構造において、冷却フィン18bを樹脂モールド後に接続するようにしても良い。
3 三相モータ
4 昇圧回路
5 インバータ出力回路
10 半導体モジュール
11 半導体チップ
12 銅ブロック
13、14 第1、第2電気配線
15 制御端子
16 溶射絶縁膜
17 溶射アルミ膜
18 冷却プレート
18a 冷却フィン
19 樹脂モールド部
41、51、53、55 上アーム
42、52、54、56 下アーム
Claims (9)
- 冷却プレート(18)を用意し、該冷却プレート(18)の表面側に絶縁材を介して半導体パワー素子が形成された半導体チップ(11)を搭載したのち、樹脂モールド部(19)にてモールドして一体構造とする半導体モジュールの製造方法において、
前記冷却プレート(18)の表面に前記絶縁材として溶射絶縁膜(16)を形成する絶縁膜形成工程と、
前記溶射絶縁膜(16)における前記冷却プレート(18)とは反対側の面に溶射導体膜(17)を形成する導体膜形成工程と、
前記溶射導体膜(17)および前記冷却プレート(18)を電極として、これら前記溶射導体膜(17)と前記冷却プレート(18)との間に電圧を印加することにより、前記溶射導体膜(17)と前記冷却プレート(18)との間の絶縁が行われていることの検査を行う絶縁検査工程と、
前記絶縁検査工程にて絶縁が行われているものを用いて、前記溶射導体膜(17)の上に前記半導体チップ(11)を搭載したのち、前記樹脂モールド部(19)にてモールドして一体構造とする樹脂モールド工程と、を含んでいることを特徴とする半導体モジュールの製造方法。 - 前記樹脂モールド工程では、前記溶射導体膜(17)の表面に金属ブロック(12)を介して前記半導体チップ(11)を配置することを特徴とする請求項1に記載の半導体モジュールの製造方法。
- 前記樹脂モールド工程では、前記溶射導体膜(17)の表面に直接前記半導体チップ(11)を配置することを特徴とする請求項1に記載の半導体モジュールの製造方法。
- 前記冷却プレート(18)として、板状のプレート部(18a)のみによって構成されたものを用いることを特徴とする請求項1ないし3のいずれか1つに記載の半導体モジュールの製造方法。
- 前記溶射絶縁膜形成工程、前記絶縁膜形成工程、前記絶縁検査工程および前記樹脂モールド工程では、前記冷却プレート(18)のうちの板状のプレート部(18a)のみを用いて行い、前記樹脂モールド工程の後に、前記冷却プレート(18)のプレート部(18a)に対して冷却フィン(18a)を接続する工程を有していることを特徴とする請求項1ないし3のいずれか1つに記載の半導体モジュールの製造方法。
- 冷却プレート(18)を用意し、該冷却プレート(18)の表面側に絶縁材を介して半導体パワー素子が形成された半導体チップ(11)を搭載したのち、樹脂モールド部(19)にてモールドして一体構造とする半導体モジュールであって、
前記冷却プレート(18)の表面側には、溶射絶縁膜(16)を介して溶射導体膜(17)が形成されており、該溶射導体膜(17)の上に前記半導体チップ(11)が配置されていることを特徴とする半導体モジュール。 - 前記溶射導体膜(17)の表面に金属ブロック(12)を介して前記半導体チップ(11)が配置されていることを特徴とする請求項6に記載の半導体モジュール。
- 前記溶射導体膜(17)の表面に直接前記半導体チップ(11)が配置されていることを特徴とする請求項6に記載の半導体モジュール。
- 前記冷却プレート(18)は、板状のプレート部(18a)のみによって構成されていることを特徴とする請求項6ないし8のいずれか1つに記載の半導体モジュール。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010149662A JP5565147B2 (ja) | 2010-06-30 | 2010-06-30 | 半導体モジュールの製造方法 |
US13/173,334 US8629004B2 (en) | 2010-06-30 | 2011-06-30 | Method of manufacturing semiconductor modules and semiconductor module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010149662A JP5565147B2 (ja) | 2010-06-30 | 2010-06-30 | 半導体モジュールの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012015287A true JP2012015287A (ja) | 2012-01-19 |
JP5565147B2 JP5565147B2 (ja) | 2014-08-06 |
Family
ID=45399108
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010149662A Active JP5565147B2 (ja) | 2010-06-30 | 2010-06-30 | 半導体モジュールの製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8629004B2 (ja) |
JP (1) | JP5565147B2 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013150772A1 (ja) * | 2012-04-02 | 2013-10-10 | 富士電機株式会社 | 電力変換器 |
JP2016074935A (ja) * | 2014-10-03 | 2016-05-12 | 富士電機株式会社 | 溶射用複合粉体材料及び溶射絶縁基板 |
CN107154393A (zh) * | 2016-03-03 | 2017-09-12 | 福特全球技术公司 | 电力电子模块 |
JP2018032710A (ja) * | 2016-08-24 | 2018-03-01 | トヨタ自動車株式会社 | ヒートシンクの検査方法、検査装置及び製造方法 |
JP2018509780A (ja) * | 2015-03-23 | 2018-04-05 | 広東美的制冷設備有限公司Gd Midea Air−Conditioning Equipment Co.,Ltd. | インテリジェントパワーモジュール及びその製造方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014214784A1 (de) * | 2014-07-28 | 2016-02-11 | Continental Automotive Gmbh | Schaltungsträger, elektronische Baugruppe, Verfahren zum Herstellen eines Schaltungsträgers |
DE102015216047A1 (de) * | 2015-08-21 | 2017-02-23 | Continental Automotive Gmbh | Schaltungsträger, Leistungselektronikanordnung mit einem Schaltungsträger |
JP7454160B2 (ja) * | 2016-05-09 | 2024-03-22 | ストロング フォース アイオーティ ポートフォリオ 2016,エルエルシー | 産業用のモノのインターネットのための方法およびシステム |
JP2018101664A (ja) * | 2016-12-19 | 2018-06-28 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
CN111602233B (zh) * | 2018-02-26 | 2023-06-20 | 新电元工业株式会社 | 半导体装置的制造方法 |
DE102020207698A1 (de) | 2020-06-22 | 2021-12-23 | Zf Friedrichshafen Ag | Leistungsmodul zum Betreiben eines Elektrofahrzeugantriebs mit optimierter Kühlung |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5724596A (en) * | 1980-07-21 | 1982-02-09 | Tokyo Shibaura Electric Co | Circuit board |
JPH07283499A (ja) * | 1994-04-05 | 1995-10-27 | Nippon Carbide Ind Co Inc | 電子部品用複合基板 |
JP2004532529A (ja) * | 2001-05-25 | 2004-10-21 | オイペク オイロペーシェ ゲゼルシャフト フューア ライストゥングスハルプライター エムベーハー | 電力半導体モジュール、および電力半導体モジュールの製造方法 |
JP2006179856A (ja) * | 2004-11-25 | 2006-07-06 | Fuji Electric Holdings Co Ltd | 絶縁基板および半導体装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11204700A (ja) | 1998-01-19 | 1999-07-30 | Hitachi Ltd | 放熱フィン一体型パワーモジュール |
JP4028452B2 (ja) * | 2003-08-27 | 2007-12-26 | Dowaホールディングス株式会社 | 電子部品搭載基板およびその製造方法 |
US8174106B2 (en) * | 2006-08-29 | 2012-05-08 | International Business Machines Corporation | Through board stacking of multiple LGA-connected components |
JP5227532B2 (ja) * | 2007-04-02 | 2013-07-03 | 日立オートモティブシステムズ株式会社 | インバータ回路用の半導体モジュール |
JP4867793B2 (ja) * | 2007-05-25 | 2012-02-01 | 株式会社豊田自動織機 | 半導体装置 |
JP4958735B2 (ja) * | 2007-11-01 | 2012-06-20 | 株式会社日立製作所 | パワー半導体モジュールの製造方法、パワー半導体モジュールの製造装置、パワー半導体モジュール、及び接合方法 |
-
2010
- 2010-06-30 JP JP2010149662A patent/JP5565147B2/ja active Active
-
2011
- 2011-06-30 US US13/173,334 patent/US8629004B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5724596A (en) * | 1980-07-21 | 1982-02-09 | Tokyo Shibaura Electric Co | Circuit board |
JPH07283499A (ja) * | 1994-04-05 | 1995-10-27 | Nippon Carbide Ind Co Inc | 電子部品用複合基板 |
JP2004532529A (ja) * | 2001-05-25 | 2004-10-21 | オイペク オイロペーシェ ゲゼルシャフト フューア ライストゥングスハルプライター エムベーハー | 電力半導体モジュール、および電力半導体モジュールの製造方法 |
JP2006179856A (ja) * | 2004-11-25 | 2006-07-06 | Fuji Electric Holdings Co Ltd | 絶縁基板および半導体装置 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013150772A1 (ja) * | 2012-04-02 | 2013-10-10 | 富士電機株式会社 | 電力変換器 |
JPWO2013150772A1 (ja) * | 2012-04-02 | 2015-12-17 | 富士電機株式会社 | 電力変換器 |
JP2016074935A (ja) * | 2014-10-03 | 2016-05-12 | 富士電機株式会社 | 溶射用複合粉体材料及び溶射絶縁基板 |
JP2018509780A (ja) * | 2015-03-23 | 2018-04-05 | 広東美的制冷設備有限公司Gd Midea Air−Conditioning Equipment Co.,Ltd. | インテリジェントパワーモジュール及びその製造方法 |
CN107154393A (zh) * | 2016-03-03 | 2017-09-12 | 福特全球技术公司 | 电力电子模块 |
CN107154393B (zh) * | 2016-03-03 | 2022-09-02 | 福特全球技术公司 | 电力电子模块 |
JP2018032710A (ja) * | 2016-08-24 | 2018-03-01 | トヨタ自動車株式会社 | ヒートシンクの検査方法、検査装置及び製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP5565147B2 (ja) | 2014-08-06 |
US8629004B2 (en) | 2014-01-14 |
US20120001349A1 (en) | 2012-01-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5565147B2 (ja) | 半導体モジュールの製造方法 | |
US9390996B2 (en) | Double-sided cooling power module and method for manufacturing the same | |
EP2682985B1 (en) | Semiconductor module and semiconductor module manufacturing method | |
US9129931B2 (en) | Power semiconductor module and power unit device | |
US8847374B2 (en) | Power semiconductor module and manufacturing method thereof | |
JP5846123B2 (ja) | パワーモジュール | |
US11227808B2 (en) | Power module and method for fabricating the same, and power conversion device | |
US11183457B2 (en) | Semiconductor device, power converter, method for manufacturing semiconductor device, and method for manufacturing power converter | |
CN1758522A (zh) | 逆变器装置以及使用它的车辆驱动装置 | |
JP2012015453A (ja) | 半導体モジュールおよびその製造方法 | |
US20130286617A1 (en) | Circuit device | |
WO2013001905A1 (ja) | リードフレーム、及び、パワーモジュール | |
US10615131B2 (en) | Semiconductor device with high quality and reliability wiring connection, and method for manufacturing the same | |
JP2011258594A (ja) | 半導体モジュールの製造方法 | |
JP5353825B2 (ja) | 半導体モジュール | |
JP6575739B1 (ja) | 半導体装置、半導体装置の製造方法および電力変換装置 | |
JP5464062B2 (ja) | 半導体モジュールを備えた半導体装置 | |
JP2012222000A (ja) | 半導体モジュール及びその製造方法 | |
WO2020148879A1 (ja) | 半導体装置、半導体装置の製造方法及び電力変換装置 | |
JP6447914B2 (ja) | パワーモジュールの直流側配線基板及びその製造方法 | |
CN214756105U (zh) | 逆变器模块及逆变器 | |
US11784105B2 (en) | Semiconductor device and power converter | |
JP2017022157A (ja) | パワー半導体装置 | |
JP2015185749A (ja) | 半導体モジュール | |
CN117321763A (zh) | 功率半导体装置以及电力转换装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120802 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130321 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130611 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130809 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140520 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140602 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5565147 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |