JP2012014002A - 半導体装置およびその製造方法、集積基板、光モジュール、光通信装置 - Google Patents
半導体装置およびその製造方法、集積基板、光モジュール、光通信装置 Download PDFInfo
- Publication number
- JP2012014002A JP2012014002A JP2010151244A JP2010151244A JP2012014002A JP 2012014002 A JP2012014002 A JP 2012014002A JP 2010151244 A JP2010151244 A JP 2010151244A JP 2010151244 A JP2010151244 A JP 2010151244A JP 2012014002 A JP2012014002 A JP 2012014002A
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- semiconductor
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- bonding
- light
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- 239000000758 substrate Substances 0.000 title claims abstract description 88
- 230000003287 optical effect Effects 0.000 title claims description 62
- 238000004891 communication Methods 0.000 title claims description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000000034 method Methods 0.000 title description 10
- 239000010409 thin film Substances 0.000 claims abstract description 58
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical class [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims abstract description 50
- 150000001875 compounds Chemical class 0.000 claims abstract description 37
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 42
- 239000002096 quantum dot Substances 0.000 claims description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 41
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 39
- 238000010586 diagram Methods 0.000 description 12
- 239000000835 fiber Substances 0.000 description 10
- 125000006850 spacer group Chemical group 0.000 description 8
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000005253 cladding Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
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- 238000001312 dry etching Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
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- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0236—Fixing laser chips on mounts using an adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
- H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
- Led Devices (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010151244A JP2012014002A (ja) | 2010-07-01 | 2010-07-01 | 半導体装置およびその製造方法、集積基板、光モジュール、光通信装置 |
| PCT/JP2011/060909 WO2012002045A1 (ja) | 2010-07-01 | 2011-05-12 | 半導体装置およびその製造方法、集積基板、光モジュール、光通信装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010151244A JP2012014002A (ja) | 2010-07-01 | 2010-07-01 | 半導体装置およびその製造方法、集積基板、光モジュール、光通信装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012014002A true JP2012014002A (ja) | 2012-01-19 |
| JP2012014002A5 JP2012014002A5 (enrdf_load_stackoverflow) | 2012-12-27 |
Family
ID=45401780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010151244A Pending JP2012014002A (ja) | 2010-07-01 | 2010-07-01 | 半導体装置およびその製造方法、集積基板、光モジュール、光通信装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2012014002A (enrdf_load_stackoverflow) |
| WO (1) | WO2012002045A1 (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017022289A (ja) * | 2015-07-13 | 2017-01-26 | 株式会社Ｑｄレーザ | 半導体レーザ、光モジュール、光通信装置、及び光通信システム |
| KR20190127175A (ko) * | 2018-05-03 | 2019-11-13 | 쥬니퍼 네트워크스, 인크. | 포토닉스와 일렉트로닉스의 이종 통합을 위한 원자 층 퇴적 본딩 |
| JP2022133127A (ja) * | 2021-03-01 | 2022-09-13 | 住友電気工業株式会社 | 半導体光素子およびその製造方法 |
| JP2023524481A (ja) * | 2020-04-30 | 2023-06-12 | ウニフェルジテイト・ヘント | コロイド量子ドット発光体及び検出器 |
| US11846803B2 (en) | 2017-01-18 | 2023-12-19 | Openlight Photonics, Inc. | Atomic layer deposition bonding for heterogeneous integration of photonics and electronics |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8469588B2 (en) * | 2010-05-03 | 2013-06-25 | General Electric Company | System and method for compressor inlet temperature measurement |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2624119B2 (ja) * | 1993-06-03 | 1997-06-25 | 日本電気株式会社 | 複合型半導体積層構造の製造方法 |
| JP4120184B2 (ja) * | 2000-06-30 | 2008-07-16 | セイコーエプソン株式会社 | 実装用微小構造体および光伝送装置 |
| JP4167812B2 (ja) * | 2001-03-07 | 2008-10-22 | セイコーエプソン株式会社 | 面発光型半導体レーザおよびその製造方法 |
| JP2002305144A (ja) * | 2001-04-05 | 2002-10-18 | Seiko Epson Corp | 半導体基板の製造方法、ならびに半導体基板の製造装置 |
| JP2007164110A (ja) * | 2005-12-19 | 2007-06-28 | National Institute Of Advanced Industrial & Technology | 光ｉ／ｏ部作製方法および光集積回路 |
| JP2008198957A (ja) * | 2007-02-16 | 2008-08-28 | Hitachi Ltd | 半導体レーザ装置および光増幅装置 |
-
2010
- 2010-07-01 JP JP2010151244A patent/JP2012014002A/ja active Pending
-
2011
- 2011-05-12 WO PCT/JP2011/060909 patent/WO2012002045A1/ja active Application Filing
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017022289A (ja) * | 2015-07-13 | 2017-01-26 | 株式会社Ｑｄレーザ | 半導体レーザ、光モジュール、光通信装置、及び光通信システム |
| US11846803B2 (en) | 2017-01-18 | 2023-12-19 | Openlight Photonics, Inc. | Atomic layer deposition bonding for heterogeneous integration of photonics and electronics |
| KR20190127175A (ko) * | 2018-05-03 | 2019-11-13 | 쥬니퍼 네트워크스, 인크. | 포토닉스와 일렉트로닉스의 이종 통합을 위한 원자 층 퇴적 본딩 |
| KR102510356B1 (ko) * | 2018-05-03 | 2023-03-17 | 오픈라이트 포토닉스, 인크. | 포토닉스와 일렉트로닉스의 이종 통합을 위한 원자 층 퇴적 본딩 |
| KR20230040325A (ko) * | 2018-05-03 | 2023-03-22 | 오픈라이트 포토닉스, 인크. | 포토닉스와 일렉트로닉스의 이종 통합을 위한 원자 층 퇴적 본딩 |
| KR102678638B1 (ko) * | 2018-05-03 | 2024-06-28 | 오픈라이트 포토닉스, 인크. | 포토닉스와 일렉트로닉스의 이종 통합을 위한 원자 층 퇴적 본딩 |
| JP2023524481A (ja) * | 2020-04-30 | 2023-06-12 | ウニフェルジテイト・ヘント | コロイド量子ドット発光体及び検出器 |
| JP7660859B2 (ja) | 2020-04-30 | 2025-04-14 | ウニフェルジテイト・ヘント | コロイド量子ドット発光体及び検出器 |
| JP2022133127A (ja) * | 2021-03-01 | 2022-09-13 | 住友電気工業株式会社 | 半導体光素子およびその製造方法 |
| JP7578025B2 (ja) | 2021-03-01 | 2024-11-06 | 住友電気工業株式会社 | 半導体光素子およびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012002045A1 (ja) | 2012-01-05 |
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