JP2012014002A - Semiconductor device, method for manufacturing the same, integrated substrate, optical module, and optical communication device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress occurrence of peeling-off between a semiconductor layer made of In-free III-V compound semiconductor and a substrate, in a structure in which the semiconductor layer made of In-free III-V compound semiconductor is joined to a Si surface of the substrate.SOLUTION: A method for manufacturing a semiconductor device includes a step for forming a joint layer 22 made of multiple quantum dots of InAs on the surface of a contact layer 44, which is made of GaAs that is In-free III-V compound semiconductor and is an outermost surface layer of a laminated semiconductor layer 46 including an active layer 38 which oscillates light and is formed over the main surface of a GaAs substrate 32, and a step for joining the surface of the contact layer 44 to a Si surface of a Si thin-film layer 16 included in a substrate 10 through the joint layer 22.

Description

  The present invention relates to a semiconductor device and a method for manufacturing the same, and more particularly, a semiconductor device for bonding a surface of a semiconductor layer made of a group III-V compound semiconductor not containing In and a Si surface of a substrate, a method for manufacturing the semiconductor device, and the semiconductor The present invention relates to an integrated substrate including the device, an optical module, and an optical communication device.

  2. Description of the Related Art A semiconductor device is known in which a light emitting element made of a compound semiconductor is bonded to the surface of an SOI (Silicon on Insulator) substrate, and light oscillated by the light emitting element is guided in a waveguide formed on the SOI substrate. For example, Non-Patent Document 1 discloses a semiconductor device having a structure in which an InP (indium phosphide) light emitting element is bonded to the surface of an SOI substrate.

Alexander W. Fang and five others, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser”, Optics Express ( OPTICS EXPRESS), October 2, 2006, No. 20, Vol. 14, p. 9203-9210

  In addition to InP-based light-emitting elements, light-emitting elements include light-emitting elements made of III-V group compound semiconductors that do not contain In (indium), such as GaAs (gallium arsenide) -based light-emitting elements. For example, when a light emitting element composed of a III-V group compound semiconductor not containing In is bonded to an SOI substrate, the Si surface of the SOI substrate and the III-V group compound semiconductor layer surface not containing In are joined. In this case, the SOI substrate and the III-V group compound semiconductor layer not containing In may be peeled off.

  As described above, when the surface of the semiconductor layer made of a III-V group compound semiconductor not containing In is bonded to the Si surface of the substrate, the substrate is peeled off from the semiconductor layer made of a group III-V compound semiconductor not containing In and the substrate. There is a problem that will occur.

  The present invention has been made in view of the above problems, and has a structure in which the surface of a semiconductor layer made of a group III-V compound semiconductor not containing In and the Si surface of the substrate are joined together. It is an object of the present invention to provide a semiconductor device capable of suppressing peeling between a semiconductor layer made of a compound semiconductor and a substrate, a manufacturing method thereof, an integrated substrate including the semiconductor device, an optical module, and an optical communication device.

  The present invention includes a step of forming a bonding layer containing In on a surface of a semiconductor layer made of a group III-V compound semiconductor not containing In, and the surface of the semiconductor layer is bonded to the Si of the substrate via the bonding layer. A method of manufacturing a semiconductor device, comprising: bonding to a surface. ADVANTAGE OF THE INVENTION According to this invention, it can suppress that the III-V group compound semiconductor layer and board | substrate which do not contain In peel.

  In the above configuration, the semiconductor layer is an outermost semiconductor layer of a stacked semiconductor layer including an active layer that oscillates light and is formed on a main surface of a group III-V compound semiconductor substrate. The active layer may have a waveguide for guiding light oscillated. According to this configuration, light oscillated by the active layer can be guided by the waveguide provided on the substrate.

  In the above configuration, the step of forming the bonding layer has a band gap energy larger than the energy of light oscillated by the active layer after bonding the surface of the semiconductor layer and the Si surface of the substrate. The bonding layer can be formed. According to this configuration, since light oscillated by the active layer can be suppressed from being absorbed by the bonding layer, light having high light intensity can be guided through the waveguide provided on the substrate.

  The said structure WHEREIN: The process of forming the said joining layer can be set as the structure which forms the said joining layer which consists of several quantum dots which are III-V group compound semiconductors containing In. According to this configuration, after bonding the surface of the semiconductor layer made of a III-V group compound semiconductor not containing In and the Si surface of the substrate, the bonding layer is larger than the energy of light oscillated by the active layer. Having a band gap energy can be easily realized.

  The said structure WHEREIN: The process of forming the said bonding layer can be set as the structure which forms the said bonding layer which consists of several InAs quantum dots.

  In the above configuration, the step of forming the bonding layer is performed after bonding the surface of the semiconductor layer and the Si surface of the substrate when the wavelength of light oscillated by the active layer is in the 1.3 μm band. The bonding layer can be formed by supplying an amount of InAs such that the bonding layer has a thickness of 5 atomic layers or less. According to this configuration, it is possible to obtain a bonding layer in which absorption of light having a wavelength in the 1.3 μm band in which the active layer oscillates is suppressed.

  The present invention is an III-V group compound semiconductor which is the outermost layer of a laminated semiconductor layer including an active layer that oscillates light and is provided on the main surface of a III-V group compound semiconductor substrate, and does not contain In. A semiconductor layer formed on the surface of the semiconductor layer, having a band gap energy larger than the energy of light oscillated by the active layer, and guiding light oscillated by the active layer. And a substrate having a Si surface bonded to the surface of the semiconductor layer via the bonding layer. ADVANTAGE OF THE INVENTION According to this invention, it can suppress that the III-V group compound semiconductor layer and board | substrate which do not contain In peel. In addition, since light oscillated by the active layer can be suppressed from being absorbed by the bonding layer, light with high light intensity can be guided through the waveguide provided on the substrate.

  In the above configuration, the bonding layer may be an InAs thin film layer, the wavelength of light oscillated by the active layer is in a 1.3 μm band, and the thickness of the bonding layer may be 5 atomic layers or less. . According to this structure, it can suppress that a joining layer absorbs the light of the wavelength of 1.3 micrometer band oscillated by the active layer.

  The present invention is an integrated substrate including the semiconductor device. The present invention also provides an optical module including the semiconductor device. Furthermore, the present invention is an optical communication device including the semiconductor device.

  According to the present invention, in the structure in which the surface of the semiconductor layer made of a group III-V compound semiconductor not containing In and the Si surface of the substrate are bonded, the group III-V compound semiconductor layer not containing In and the substrate are peeled off. This can be suppressed.

FIG. 1 is an example of a schematic cross-sectional view of a semiconductor device according to the first embodiment. FIG. 2 is an example of a schematic cross-sectional view showing a dot layer for one active layer. FIG. 3 is an example of an energy band diagram from the p-type GaAs substrate to the Si layer in the semiconductor device according to the first embodiment. FIG. 4A to FIG. 4C are examples of schematic cross-sectional views illustrating a method for manufacturing a semiconductor device according to the first embodiment. FIG. 5A is an example of an energy band diagram in a structure in which an InAs thin film layer is sandwiched between GaAs layers, and FIG. 5B is a diagram showing a calculation result of band gap energy with respect to the thickness of the InAs thin film layer. It is. FIG. 6 is an example of a schematic perspective view of an integrated substrate according to the second embodiment. FIG. 7 is an example of a block diagram of an optical module according to the third embodiment. FIG. 8A is an example of a block diagram of an optical communication apparatus according to the fourth embodiment, and FIG. 8B is an example of a block diagram of an optical communication system including the optical communication apparatus according to the fourth embodiment. is there.

  First, problems to be solved by the present invention will be described in detail. In the case of a structure in which an InP-based light emitting element is bonded to the SOI substrate surface as in the semiconductor device disclosed in Non-Patent Document 1, the Si surface of the SOI substrate and the semiconductor layer surface containing In are bonded. In this case, it is considered that Si atoms contained in the Si surface and In atoms contained in the semiconductor layer containing In are bonded. The bond between the Si atom and the In atom has a strong bond strength. For example, even if the temperature rises, the bond is difficult to break. Therefore, the SOI substrate and the semiconductor layer containing In are hardly peeled off.

  On the other hand, in the case of a structure in which a light emitting element made of a group III-V compound semiconductor not containing In is bonded to the SOI substrate surface, the Si surface of the SOI substrate and the group III-V compound semiconductor layer surface not containing In should be joined. become. For example, when a GaAs light-emitting element is used as an example of a light-emitting element made of a III-V group compound semiconductor not containing In, the Si surface of the SOI substrate and the GaAs semiconductor layer surface are bonded. In this case, it is considered that Si atoms contained in the Si surface and Ga atoms contained in the GaAs semiconductor layer are combined. However, since the bond strength between Si atoms and Ga atoms is weak, for example, when the temperature rises, the bonds are easily broken. Thus, in the case of a structure in which a GaAs light emitting element is bonded to the surface of an SOI substrate, there is a problem that the SOI substrate and the GaAs semiconductor layer are easily peeled off. Therefore, an embodiment capable of solving such a problem will be described below.

FIG. 1 is an example of a schematic cross-sectional view of a semiconductor device according to the first embodiment. As illustrated in FIG. 1, the semiconductor device 100 according to the first embodiment has a structure in which a light emitting element 30 is bonded to the surface of a substrate 10. The substrate 10 is, for example, an SOI (Silicon on Insulator) substrate, and has a structure in which an embedded SiO ₂ (silicon oxide) film 14 and a Si thin film layer 16 are sequentially formed on a Si support substrate 12. That is, the Si surface of the Si thin film layer 16 is exposed on the surface of the substrate 10. The Si thin film layer 16 is formed with a cavity 18 that is removed until the embedded SiO ₂ film 14 is exposed, and a part of the Si thin film layer 16 is sandwiched between the cavity 18. That is, a part of the Si thin film layer 16 is surrounded by the cavity 18 and the embedded SiO ₂ film 14. Si has a larger refractive index than that of SiO ₂ or air with respect to light wavelengths in the 1.3 μm band and 1.55 μm band that are generally used for optical communication. Therefore, a part of the Si thin film layer 16 surrounded by the cavity 18 and the embedded SiO ₂ film 14 can be used as the waveguide 20 having a function of guiding light.

  The light emitting element 30 is a GaAs light emitting element having a quantum dot active layer that oscillates light having a wavelength of, for example, 1.3 μm. The light emitting element 30 includes, for example, a lower clad layer 34 made of p-type AlGaAs, a spacer layer 36 made of undoped GaAs, an active layer 38 having a plurality of quantum dots, and a spacer made of undoped GaAs on the main surface of a p-type GaAs substrate 32. The structure includes a laminated semiconductor layer 46 in which a layer 40, an upper cladding layer 42 made of n-type AlGaAs, and a contact layer 44 made of n-type GaAs are sequentially laminated. That is, the outermost layer of the laminated semiconductor layer 46 is the contact layer 44. A p-electrode 48 is formed on the surface opposite to the main surface of the p-type GaAs substrate 32. An n electrode 50 is formed in contact with the contact layer 44.

  Here, the active layer 38 will be described in more detail. FIG. 2 is an example of a schematic cross-sectional view showing one dot layer 52 of the active layer 38. As shown in FIG. 2, the quantum dots 54 are formed of InAs. An InGaAs layer 56 is formed between the quantum dots 54. An undoped GaAs layer 58 is formed so as to cover the quantum dots 54 and the InGaAs layer 56. A p-type GaAs layer 60 and an undoped GaAs layer 62 are sequentially formed on the surface of the undoped GaAs layer 58. The undoped GaAs layer 58, the p-type GaAs layer 60, and the undoped GaAs layer 62 constitute a barrier layer 64.

  Returning to FIG. 1, between the substrate 10 and the light emitting element 30, for example, a bonding layer 22 made of a thin film layer of InAs and having a thickness of two atomic layers is interposed. That is, the bonding layer 22 is provided between the Si thin film layer 16 and the contact layer 44. By bonding the Si surface of the Si thin film layer 16 and the GaAs surface of the contact layer 44 with the bonding layer 22 made of InAs interposed therebetween, the Si thin film layer 16 and the bonding layer 22 are bonded to each other by Si atoms having a strong bond strength. As a result, the Si thin film layer 16 and the contact layer 44 do not easily peel off.

  The semiconductor device 100 according to Example 1 has a structure in which a light emitting element 30 is bonded to the surface of a substrate 10 as shown in FIG. Therefore, the light oscillated in the active layer 38 propagates to the substrate 10 and can be guided in the waveguide 20 provided on the substrate 10. Therefore, the semiconductor device 100 can be used as an optical circuit, and can be used as, for example, an optical modulator, multiplexer, or duplexer.

  FIG. 3 is an example of an energy band diagram from the p-type GaAs substrate 32 to the Si thin film layer 16 in the semiconductor device 100 according to the first embodiment. As shown in FIG. 3, the band gap energy Ega of the bonding layer 22 made of InAs is larger than the band gap energy Egb of the active layer 38. For this reason, the light oscillated by the active layer 38 can be suppressed from being absorbed by the bonding layer 22. That is, the light oscillated by the active layer 38 is hardly absorbed by the bonding layer 22 but propagates to the substrate 10 and can be guided in the waveguide 20.

  Next, a method for manufacturing the semiconductor device 100 according to the first embodiment will be described. FIG. 4A to FIG. 4C are examples of schematic cross-sectional views illustrating a method for manufacturing the semiconductor device 100 according to the first embodiment. As shown in FIG. 4A, first, on the main surface of the p-type GaAs substrate 32, for example, an MBE (Molecular Beam Epitaxy) method is used to form a lower cladding layer 34, a spacer layer 36, and an active layer having a plurality of quantum dots. 38, the spacer layer 40, the upper cladding layer 42, and the contact layer 44 are sequentially laminated to form a laminated semiconductor layer 46.

  Subsequently, the bonding layer 22 composed of a plurality of InAs quantum dots is formed on the surface of the contact layer 44, which is the outermost layer of the laminated semiconductor layer 46. The bonding layer 22 is formed such that, after bonding the surface of the contact layer 44 and the Si surface of the Si thin film layer 16, the bonding layer 22 has a band gap energy larger than the energy of light oscillated by the active layer 38. Form. The bonding layer 22 is formed by supplying, for example, an amount of InAs corresponding to the growth of a 2.5 molecular layer thickness. For example, the bonding layer 22 made of InAs quantum dots having a height of 10 nm is formed.

  As shown in FIG. 4B, a substrate 10 having a waveguide 20 is prepared. The waveguide 20 is formed by selectively etching the Si thin film layer 16 by, for example, a dry etching method. Then, after cleaning the Si surface of the Si thin film layer 16 using, for example, hydrofluoric acid, a pressure of 10 kPa is applied at a temperature of 250 ° C., for example, and the surface of the contact layer 44 and the Si surface of the Si thin film layer 16 are Are bonded with the bonding layer 22 interposed therebetween. As a result, the bonding layer 22 that is a quantum dot becomes, for example, a thin film layer of InAs having a thickness of two atomic layers. In FIG. 4A, an amount of InAs corresponding to the growth of 2.5 molecular layer thickness is supplied to form the bonding layer 22 made of InAs quantum dots, whereas the surface of the contact layer 44 and Si The reason why the bonding layer 22 after bonding the Si surface of the thin film layer 16 is an InAs thin film layer having a diatomic thickness is that In diffused into the contact layer 44 and the like.

  As shown in FIG. 4C, the p-type GaAs substrate 32, the lower cladding layer 34, the spacer layer 36, the active layer 38, the spacer layer 40, and the like are formed by dry etching, for example, so that a part of the contact layer 44 is exposed. The upper cladding layer 42 is selectively etched. Thereafter, the p electrode 48 and the n electrode 50 are formed. Thereby, the semiconductor device 100 according to the first embodiment is completed.

  Thus, according to Example 1, as shown in FIG. 4A, the bonding layer 22 made of a plurality of InAs quantum dots is formed on the surface of the contact layer 44 made of an n-type GaAs layer. Then, as shown in FIG. 4B, the surface of the contact layer 44 is bonded to the Si surface of the Si thin film layer 16 via the bonding layer 22. When the GaAs surface of the contact layer 44 and the Si surface of the Si thin film layer 16 are directly bonded, the bonding strength between Si atoms and Ga atoms is weak, and therefore, they are easily peeled off. However, as in Example 1, the bonding strength between Si atoms and In atoms is strong by bonding the GaAs surface of the contact layer 44 and the Si surface of the Si thin film layer 16 through the InAs bonding layer 22. For this reason, the bonding force between the contact layer 44 and the Si thin film layer 16 is increased, and peeling is less likely to occur. That is, the contact layer 44 and the substrate 10 can be prevented from being peeled off by forming a bond structure of Si atoms and In atoms having high bond strength.

  In the semiconductor device 100, the contact layer 44, which is the outermost layer of the laminated semiconductor layer 46 including the active layer 38 that oscillates light formed on the main surface of the p-type GaAs substrate 32, is the contact layer 44. The substrate is bonded to the surface of the substrate 10 having the waveguide 20 for guiding light through the bonding layer 22 formed on the surface of the substrate. Thereby, the light oscillated in the active layer 38 is propagated to the substrate 10 and can be guided in the waveguide 20 provided in the substrate 10. Therefore, as described with reference to FIGS. 3 and 4A, the bonding layer 22 is light that the active layer 38 oscillates after the surface of the contact layer 44 and the Si surface of the Si thin film layer 16 are bonded. It is preferable that the bonding layer 22 have a band gap larger than the energy of. As a result, the light oscillated by the active layer 38 can be suppressed from being absorbed by the bonding layer 22, and light having high light intensity can be guided through the waveguide 20 provided in the substrate 10. .

  Here, the relationship between the thickness of the bonding layer 22, which is a thin film layer of InAs, and the band gap energy will be described with reference to FIGS. FIG. 5A is an example of an energy band diagram in the case of an InAs quantum well structure in which an InAs thin film layer is sandwiched between GaAs layers. FIG. 5B is a diagram showing a calculation result of the band gap energy at the ground level with respect to the thickness of the InAs thin film layer in the InAs quantum well structure of FIG. 5A, and the horizontal axis represents the InAs thin film layer. The thickness is represented by atomic layer thickness, and the vertical axis represents the band gap energy of the InAs thin film layer. As shown in FIG. 5A, the electrons confined in the quantum well are quantized, the energy level thereof is increased, and the effective band gap energy is increased. As shown in FIG. 5B, the band gap energy at the ground level increases as the thickness of the InAs thin film layer decreases. The larger the band gap energy, the narrower the wavelength range of the light absorbed by the InAs thin film layer. From the viewpoint of suppressing the light absorption in the InAs thin film layer, it is preferable that the thickness of the InAs thin film layer is thinner. Become. FIG. 5B shows the band gap energy with respect to the thickness of the InAs thin film layer in the InAs quantum well structure in which the InAs thin film layer is sandwiched between the GaAs layers. As in the semiconductor device 100 according to the first embodiment, FIG. Even if the InAs quantum well structure in which the InAs thin film layer (bonding layer 22) is sandwiched between the GaAs layer (contact layer 44) and the Si layer (Si thin film layer 16), the same relationship as in FIG. Can be obtained.

  Therefore, in the semiconductor device 100 according to the first embodiment, in order to suppress the light oscillated in the active layer 38 from being absorbed by the bonding layer 22, the bonding layer 22 is a thin InAs thin film layer. Some cases are preferred. For example, when the active layer 38 oscillates light having a wavelength of 1.3 μm band used for general optical communication, the energy of light having a wavelength of 1.3 μm band is about 0.97 eV. As in (b), the thickness of the bonding layer 22 which is an InAs thin film layer is preferably 5 atomic layer thickness or less, more preferably 3 atomic layer thickness or less, and 2 atomic layer thickness or less. Is more preferable. That is, when the wavelength of light oscillated by the active layer 38 is in the 1.3 μm band, the surface of the contact layer 44 and the Si surface of the Si thin film layer 16 in the formation of the bonding layer 22 described with reference to FIG. Are preferably supplied to form the bonding layer 22 by supplying InAs in an amount such that the thickness of the bonding layer 22 is 5 atomic layers or less. The case where the bonding layer 22 is formed by supplying InAs is more preferable, and the case where the bonding layer 22 is formed by supplying an amount of InAs that is less than the thickness of two atomic layers is more preferable. As a result, it is possible to suppress light having a wavelength of 1.3 μm band oscillated by the active layer 38 from being absorbed by the bonding layer 22.

  As shown in FIG. 4A, the bonding layer 22 formed on the surface of the contact layer 44 is preferably a plurality of InAs quantum dots. Thus, as shown in FIG. 4B, the surface of the contact layer 44 and the Si surface of the Si thin film layer 16 are adjusted by adjusting the temperature and pressure when the surface of the contact layer 44 is bonded to the Si surface of the Si thin film layer 16. After bonding, the bonding layer 22 can be easily realized as a thin InAs thin film layer having a band gap energy larger than the energy of light oscillated by the active layer 38.

  As shown in FIG. 4A, the bonding layer 22 formed on the surface of the contact layer 44 has been described as an example of a layer made of InAs quantum dots. For example, an InAs thin film layer, an InGaAs thin film layer, or the like is used. A thin film layer of a III-V compound semiconductor containing In may also be used. Even in this case, when the surface of the contact layer 44 and the Si surface of the Si thin film layer 16 are bonded, the contact layer 44 and the Si thin film layer 16 can be prevented from being peeled off, and the active layer 38 can oscillate. Absorption can also be suppressed. However, if the bonding layer 22 formed on the surface of the contact layer 44 is a thin film layer such as InAs or InGaAs, the surface of the thin film layer is uneven, and it may be difficult to bond the contact layer 44 and the Si thin film layer 16. is there. For this reason, it is preferable that the bonding layer 22 formed on the surface of the contact layer 44 is composed of a plurality of quantum dots of III-V group compound semiconductor containing In such as InAs or InGaAs.

  The active layer 38 has been shown as an example in which light having a wavelength of 1.3 μm band is oscillated. For example, when the light having a wavelength of 1.55 μm band is oscillated, the active layer 38 has a low absorption coefficient in Si. Alternatively, light in other wavelength bands may be oscillated. When the active layer 38 oscillates light having a wavelength of 1.55 μm, in order to suppress the light having a wavelength of 1.55 μm that oscillates in the active layer 38 from being absorbed by the bonding layer 22, 1.55 μm. Since the energy of the light having the band wavelength is about 0.8 eV, the thickness of the bonding layer 22 is preferably 7 atomic layers or less, as shown in FIG. Is more preferable, and it is further more preferable that it is 3 atomic layer thickness or less.

  Although the case where the active layer 38 has a quantum dot structure is shown as an example, the active layer 38 may have a quantum well structure, for example. However, in the case of the active layer 38 having an InAs quantum dot structure, the characteristics deteriorate when exposed to a temperature of 450 ° C., for example. For this reason, when the active layer 38 has an InAs quantum dot structure, it is more preferable that the bonding layer 22 containing In is interposed as in the first embodiment. Accordingly, since the melting point of In is relatively low, the contact layer 44 and the Si thin film layer 16 can be bonded with a strong force even when a low temperature is used. Suppression can also be realized.

  Although the case where the light emitting element 30 is a GaAs light emitting element has been described as an example, the light emitting element 30 is not limited thereto. A light emitting element having another structure may be used as long as it is a light emitting element made of a group III-V compound semiconductor not containing In. Even in this case, by applying the invention of Example 1, it is possible to prevent the semiconductor layer made of the III-V group compound semiconductor not containing In from peeling off from the substrate.

  In the first embodiment, the case where the light emitting element 30 that is a GaAs light emitting element is bonded to the substrate 10 that is an SOI substrate is described as an example. However, the present invention is not limited to this. If the surface of the semiconductor layer made of a group III-V compound semiconductor not containing In is bonded to the Si surface of the substrate, the invention according to Example 1 can be applied to the group III-V not containing In. Peeling between the semiconductor layer made of a compound semiconductor and the substrate can be suppressed.

  The second embodiment is an example of an integrated substrate including the semiconductor device 100 according to the first embodiment. FIG. 6 is an example of a schematic perspective view of an integrated substrate according to the second embodiment. As shown in FIG. 6, an electronic circuit (not shown) including Si transistors is integrated on the integrated substrate 200 according to the second embodiment, and the semiconductor device 100 according to the first embodiment is further integrated. As a result, the optical circuit formed by the semiconductor device 100 and the electronic circuit formed by a transistor are merged.

  The third embodiment is an example of an optical module including the semiconductor device 100 according to the first embodiment. FIG. 7 is an example of a block diagram of an optical module according to the third embodiment. As illustrated in FIG. 7, the optical module 300 according to the third embodiment includes the semiconductor device 100 according to the first embodiment, the optical waveguide unit 310, and the light modulation unit 320. Light emitted from the semiconductor device 100 is guided to the light modulation unit 320 through the optical waveguide unit 310. The light modulator 320 modulates incident light. The modulated light is incident on the single mode fiber optically coupled by the optical fiber coupling unit 330 through the optical waveguide unit 310 and is transmitted through the single mode fiber.

  The fourth embodiment is an example of an optical communication device including the optical module 300 according to the third embodiment. FIG. 8A is an example of a block diagram of an optical communication apparatus according to the fourth embodiment. As illustrated in FIG. 8A, the optical communication device 400 according to the fourth embodiment includes the optical module 300 according to the third embodiment that functions as a transmission unit, a reception unit 410, and a control unit 420. The optical module 300 converts the transmission data signal from the control unit 420 into light and emits it. The emitted light enters the single mode fiber and is transmitted through the single mode fiber. The receiving unit 410 receives light transmitted through the single mode fiber and outputs the received data to the control unit 420 as received data.

  FIG. 8B is an example of a block diagram of an optical communication system including the optical communication apparatus 400 according to the fourth embodiment. As shown in FIG. 8B, the optical communication system 500 includes a first optical communication device 400a and a second optical communication device 400b. The first optical communication device 400a includes an optical module 300a, a receiving unit 410a, and a control unit 420a. The second optical communication device 400b includes an optical module 300b, a receiving unit 410b, and a control unit 420b. For example, when the optical module 300a of the first optical communication apparatus 400a converts the transmission data signal from the control unit 420a into light and emits the light, the emitted light is transmitted through the single mode fiber 510, and the second light Light is received by the receiving unit 410b of the communication device 400b. When light is received by the reception unit 410b, reception data is output to the control unit 420b. Similarly, when the optical module 300b of the second optical communication device 400b converts the transmission data signal from the control unit 420b into light and emits it, the emitted light is transmitted through the single mode fiber 510, and the first Light is received by the receiving unit 410a of the optical communication device 400a. When light is received by the reception unit 410a, reception data is output to the control unit 420a. Thereby, data communication can be performed between the first optical communication device 400a and the second optical communication device 400b.

  As shown in FIG. 8B, an optical communication system 500 that performs data communication using a single mode fiber 510 between a first optical communication apparatus 400a and a second optical communication apparatus 400b is an FTTH (Fiber To The Home) and an optical communication backbone network are preferable. Alternatively, the first optical communication device 400a and the second optical communication device 400b may perform data communication by receiving light emitted into the space without using the single mode fiber 510. In this case, the first optical communication device 400a and the second optical communication device 400b can be personal computers, for example, and one of the first optical communication device 400a and the second optical communication device 400b is A personal computer may be used, and the other may be an electronic device such as a mobile phone, a digital camera, or a video camera, or a projector.

  The preferred embodiments of the present invention have been described in detail above. However, the present invention is not limited to the specific embodiments, and various modifications and changes can be made within the scope of the gist of the present invention described in the claims. It can be changed.

DESCRIPTION OF SYMBOLS 10 Substrate 12 Si support substrate 14 Embedded SiO2 film 16 Si thin film layer 18 Cavity 20 Waveguide 22 Bonding layer 30 Light emitting element 32 p-type GaAs substrate 34 Lower clad layer 36 Spacer layer 38 Active layer 40 Spacer layer 42 Upper clad layer 44 Contact Layer 46 laminated semiconductor layer 48 p electrode 50 n electrode 52 dot layer 54 quantum dot 56 InGaAs layer 58 undoped GaAs layer 60 p-type GaAs layer 62 undoped GaAs layer 64 barrier layer 100 semiconductor device 200 integrated substrate 300 optical module 310 optical waveguide unit 320 Optical modulation unit 330 Optical fiber coupling unit 400 Optical communication device 410 Reception unit 420 Control unit 500 Optical communication system

Claims (11)

Forming a bonding layer containing In on a surface of a semiconductor layer made of a III-V group compound semiconductor not containing In;
Bonding the surface of the semiconductor layer to the Si surface of the substrate through the bonding layer. The semiconductor layer is a semiconductor layer on the outermost surface of a laminated semiconductor layer including an active layer that oscillates light and is formed on a main surface of a group III-V compound semiconductor substrate,
2. The method of manufacturing a semiconductor device according to claim 1, wherein the substrate has a waveguide for guiding light oscillated by the active layer.   The step of forming the bonding layer includes the bonding layer having a band gap energy larger than the energy of light oscillated by the active layer after bonding the surface of the semiconductor layer and the Si surface of the substrate. The method of manufacturing a semiconductor device according to claim 2, wherein:   4. The method of manufacturing a semiconductor device according to claim 2, wherein the step of forming the bonding layer includes forming the bonding layer including a plurality of quantum dots of a group III-V compound semiconductor containing In.   5. The method of manufacturing a semiconductor device according to claim 4, wherein the step of forming the bonding layer includes forming the bonding layer including a plurality of InAs quantum dots.   The step of forming the bonding layer includes the step of bonding the surface of the semiconductor layer and the Si surface of the substrate after the wavelength of light oscillated by the active layer is in the 1.3 μm band. 6. The method of manufacturing a semiconductor device according to claim 5, wherein the bonding layer is formed by supplying an amount of InAs such that the thickness of the bonding layer becomes 5 atomic layers or less. A semiconductor layer made of a group III-V compound semiconductor that does not contain In and is the outermost layer of a laminated semiconductor layer including an active layer that oscillates light provided on the main surface of a group III-V compound semiconductor substrate When,
A bonding layer containing In provided on the surface of the semiconductor layer and having a band gap energy larger than the energy of light oscillated by the active layer;
A semiconductor device comprising: a substrate having a waveguide for guiding light oscillated by the active layer, and a Si surface bonded to a surface of the semiconductor layer through the bonding layer.   The said joining layer is an InAs thin film layer, The wavelength of the light which the said active layer oscillates is a 1.3 micrometer zone | band, The thickness of the said joining layer is 5 atomic layer thickness or less, It is characterized by the above-mentioned. Semiconductor device.   An integrated substrate comprising the semiconductor device according to claim 7.   An optical module comprising the semiconductor device according to claim 7.   An optical communication device comprising the semiconductor device according to claim 7.

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