JP2011530834A - フルオロポリマーを含む発光ダイオード筺体 - Google Patents

フルオロポリマーを含む発光ダイオード筺体 Download PDF

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Publication number
JP2011530834A
JP2011530834A JP2011523054A JP2011523054A JP2011530834A JP 2011530834 A JP2011530834 A JP 2011530834A JP 2011523054 A JP2011523054 A JP 2011523054A JP 2011523054 A JP2011523054 A JP 2011523054A JP 2011530834 A JP2011530834 A JP 2011530834A
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JP
Japan
Prior art keywords
light emitting
fluoropolymer
emitting diode
housing
diode housing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011523054A
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English (en)
Japanese (ja)
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JP2011530834A5 (enExample
Inventor
ラヒジャニ ジェイコブ
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EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of JP2011530834A publication Critical patent/JP2011530834A/ja
Publication of JP2011530834A5 publication Critical patent/JP2011530834A5/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8515Wavelength conversion means not being in contact with the bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/882Scattering means
JP2011523054A 2008-08-11 2009-08-07 フルオロポリマーを含む発光ダイオード筺体 Pending JP2011530834A (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US8781508P 2008-08-11 2008-08-11
US61/087,815 2008-08-11
US12065808P 2008-12-08 2008-12-08
US61/120,658 2008-12-08
US16177809P 2009-03-20 2009-03-20
US61/161,778 2009-03-20
PCT/US2009/053089 WO2010019459A2 (en) 2008-08-11 2009-08-07 Light-emitting diode housing comprising fluoropolymer

Publications (2)

Publication Number Publication Date
JP2011530834A true JP2011530834A (ja) 2011-12-22
JP2011530834A5 JP2011530834A5 (enExample) 2012-08-23

Family

ID=41652066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011523054A Pending JP2011530834A (ja) 2008-08-11 2009-08-07 フルオロポリマーを含む発光ダイオード筺体

Country Status (7)

Country Link
US (2) US20100032702A1 (enExample)
EP (1) EP2311105A2 (enExample)
JP (1) JP2011530834A (enExample)
KR (1) KR20110044894A (enExample)
CN (1) CN102119452A (enExample)
TW (1) TW201013996A (enExample)
WO (1) WO2010019459A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020230716A1 (ja) * 2019-05-16 2020-11-19 住友化学株式会社 電子部品の製造方法および電子部品
JP2021518447A (ja) * 2018-03-15 2021-08-02 ソルベイ スペシャルティ ポリマーズ イタリー エス.ピー.エー. 発光装置の構成部品のためのフルオロポリマー組成物

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009058421A1 (de) * 2009-12-16 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Halbleiterbauteil, Gehäuse und optoelektronisches Halbleiterbauteil
TWI509838B (zh) 2010-04-14 2015-11-21 黃邦明 具氟化聚合物之表面塗層的發光二極體外殼及其發光二極體結構
CN108493314A (zh) * 2010-04-15 2018-09-04 黄邦明 用以承载发光二极管晶片的外壳及其发光二极管结构
US8340941B2 (en) * 2010-06-04 2012-12-25 Tyco Electronics Corporation Temperature measurement system for a light emitting diode (LED) assembly
ITMI20101250A1 (it) * 2010-07-07 2012-01-08 Getters Spa Miglioramenti per fosfori
US8723201B2 (en) * 2010-08-20 2014-05-13 Invenlux Corporation Light-emitting devices with substrate coated with optically denser material
DE102010051959A1 (de) * 2010-11-19 2012-05-24 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
CN106449934B (zh) * 2011-03-07 2020-03-27 肖特公开股份有限公司 用于密封地接合Cu部件的玻璃系统以及用于电子部件的壳体
US9453119B2 (en) 2011-04-14 2016-09-27 Ticona Llc Polymer composition for producing articles with light reflective properties
US9062198B2 (en) * 2011-04-14 2015-06-23 Ticona Llc Reflectors for light-emitting diode assemblies containing a white pigment
US8480254B2 (en) * 2011-04-14 2013-07-09 Ticona, Llc Molded reflective structures for light-emitting diodes
US9284448B2 (en) 2011-04-14 2016-03-15 Ticona Llc Molded reflectors for light-emitting diode assemblies
JP2012244058A (ja) * 2011-05-23 2012-12-10 Du Pont Mitsui Fluorochem Co Ltd 発光ダイオード用リフレクター及びハウジング
TWI474967B (zh) * 2011-07-14 2015-03-01 Getters Spa 有關磷光體之改良
WO2013025832A1 (en) 2011-08-16 2013-02-21 E. I. Du Pont De Nemours And Company Reflector for light-emitting diode and housing
CN104204055B (zh) 2011-12-30 2016-05-25 提克纳有限责任公司 用于发光装置的反射器
EP2620471B1 (en) * 2012-01-27 2021-03-10 3M Innovative Properties Company Polytetrafluoroethene compound with microspheres and fibers
CN104903399B (zh) 2012-12-18 2017-05-31 提克纳有限责任公司 用于发光二极管组件的模制反射器
US20150009674A1 (en) * 2013-07-03 2015-01-08 GE Lighting Solutions, LLC Structures subjected to thermal energy and thermal management methods therefor
CN104556977A (zh) * 2014-12-16 2015-04-29 广东华辉煌光电科技有限公司 一种led陶瓷封装材料
US10423249B2 (en) * 2014-12-29 2019-09-24 Lenovo (Beijing) Co., Ltd. Information processing method and electronic device
TWM509438U (zh) * 2015-04-24 2015-09-21 Unity Opto Technology Co Ltd 發光二極體支架
JP6033361B2 (ja) * 2015-05-07 2016-11-30 三井・デュポンフロロケミカル株式会社 成形品
JP6951357B2 (ja) 2016-03-04 2021-10-20 ソルベイ スペシャルティ ポリマーズ イタリー エス.ピー.エー. 発光装置の構成部品のためのフルオロポリマー組成物
CN106768463B (zh) * 2016-12-21 2019-08-09 广东工业大学 一种基于相变材料的发光二极管温度报警器
JP2020518107A (ja) 2017-04-26 2020-06-18 オーティーアイ ルミオニクス インコーポレーテッドOti Lumionics Inc. 表面上のコーティングをパターン化する方法およびパターン化されたコーティングを含むデバイス
CN108231973B (zh) * 2017-12-08 2019-08-27 开发晶照明(厦门)有限公司 封装支架
US12069938B2 (en) 2019-05-08 2024-08-20 Oti Lumionics Inc. Materials for forming a nucleation-inhibiting coating and devices incorporating same
CA3240373A1 (en) 2020-12-07 2022-06-16 Michael HELANDER Patterning a conductive deposited layer using a nucleation inhibiting coating and an underlying metallic coating
GB2622828A (en) * 2022-09-29 2024-04-03 Fotolec Tech Limited A Diffusion Coating for a Lighting Unit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005507178A (ja) * 2001-10-31 2005-03-10 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング オプトエレクトロニクスデバイス
WO2006101174A1 (ja) * 2005-03-24 2006-09-28 Kyocera Corporation 発光素子収納用パッケージおよび発光装置ならびに照明装置
JP2006330488A (ja) * 2005-05-27 2006-12-07 Asahi Glass Co Ltd 液晶表示装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2378324A1 (fr) * 1977-01-20 1978-08-18 Radiotechnique Compelec Perfectionnement a la realisation de dispositifs d'affichage
US20050136200A1 (en) * 2003-12-19 2005-06-23 Durell Christopher N. Diffuse high reflectance film
US7497581B2 (en) * 2004-03-30 2009-03-03 Goldeneye, Inc. Light recycling illumination systems with wavelength conversion
US7045827B2 (en) * 2004-06-24 2006-05-16 Gallup Kendra J Lids for wafer-scale optoelectronic packages
US20060134440A1 (en) * 2004-10-27 2006-06-22 Crivello James V Silicone encapsulants for light emitting diodes
US20080006819A1 (en) * 2006-06-19 2008-01-10 3M Innovative Properties Company Moisture barrier coatings for organic light emitting diode devices
US7678701B2 (en) * 2006-07-31 2010-03-16 Eastman Kodak Company Flexible substrate with electronic devices formed thereon
JPWO2008023605A1 (ja) * 2006-08-23 2010-01-07 三井化学株式会社 光反射体、およびそれを含む光源
TWI302372B (en) * 2006-08-30 2008-10-21 Polytronics Technology Corp Heat dissipation substrate for electronic device
KR100935869B1 (ko) * 2008-04-17 2010-01-07 삼성전기주식회사 열가소성 수지 기판을 이용한 백라이트 유닛

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005507178A (ja) * 2001-10-31 2005-03-10 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング オプトエレクトロニクスデバイス
WO2006101174A1 (ja) * 2005-03-24 2006-09-28 Kyocera Corporation 発光素子収納用パッケージおよび発光装置ならびに照明装置
JP2006330488A (ja) * 2005-05-27 2006-12-07 Asahi Glass Co Ltd 液晶表示装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021518447A (ja) * 2018-03-15 2021-08-02 ソルベイ スペシャルティ ポリマーズ イタリー エス.ピー.エー. 発光装置の構成部品のためのフルオロポリマー組成物
JP7301866B2 (ja) 2018-03-15 2023-07-03 ソルベイ スペシャルティ ポリマーズ イタリー エス.ピー.エー. 発光装置の構成部品のためのフルオロポリマー組成物
WO2020230716A1 (ja) * 2019-05-16 2020-11-19 住友化学株式会社 電子部品の製造方法および電子部品

Also Published As

Publication number Publication date
EP2311105A2 (en) 2011-04-20
US20100032702A1 (en) 2010-02-11
US20130026526A1 (en) 2013-01-31
WO2010019459A3 (en) 2010-04-22
CN102119452A (zh) 2011-07-06
TW201013996A (en) 2010-04-01
KR20110044894A (ko) 2011-05-02
WO2010019459A2 (en) 2010-02-18

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