JP2011529275A5 - - Google Patents

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Publication number
JP2011529275A5
JP2011529275A5 JP2011520151A JP2011520151A JP2011529275A5 JP 2011529275 A5 JP2011529275 A5 JP 2011529275A5 JP 2011520151 A JP2011520151 A JP 2011520151A JP 2011520151 A JP2011520151 A JP 2011520151A JP 2011529275 A5 JP2011529275 A5 JP 2011529275A5
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JP
Japan
Prior art keywords
ion implantation
boron
dopant
kev
plasma doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011520151A
Other languages
English (en)
Other versions
JP2011529275A (ja
Filing date
Publication date
Priority claimed from US12/177,750 external-priority patent/US7927986B2/en
Application filed filed Critical
Publication of JP2011529275A publication Critical patent/JP2011529275A/ja
Publication of JP2011529275A5 publication Critical patent/JP2011529275A5/ja
Pending legal-status Critical Current

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Description

【００１９】
【図１Ａ】４．５keVに等しいイオン注入エネルギーを有するポリシリコン
へのホウ素イオン注入のための、アニール前後のホウ素の二次イオン質量分析計（SIMS）の解析プロファイルを例示する図である。
【図１Ｂ】２０keVに等しいイオン注入エネルギーを有するポリシリコンへ
のホウ素イオン注入のための、アニール前後のホウ素及びフッ素の二次イオン質量分析計の解析プロファイルを例示する図である。
【図２】プラズマドーピング半導体用に用いることができるヨウ素及び臭素
化合物ガスの特性の表を示す図である。
【図３】ドーパントハロゲン及びドーパント水素の結合の結合エンタルピー
値の表を示す図である。
【図４】BI３P型ドーパントガス原料を用いて生成したイオンに対する、シ
ミュレートしたイオンのシリコンへの投影飛程の表を示す図である。
【図５】本発明によりプラズマドーピングを行うことができるプラズマドー
ピングシステムを例示する図である。
【図６】BI３ドーパントガス原料を用いて、０．５keVのイオン注入エネル
ギーに対してシミュレートした、シリコン基板内の深さの関数としてのホウ素の濃度のプラズマドーパントプロファイルを示す図である。
【発明を実施するための形態】
JP2011520151A 2008-07-22 2009-07-22 重いハロゲン化合物を用いたイオン注入 Pending JP2011529275A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/177,750 US7927986B2 (en) 2008-07-22 2008-07-22 Ion implantation with heavy halogenide compounds
US12/177,750 2008-07-22
PCT/US2009/051348 WO2010011711A2 (en) 2008-07-22 2009-07-22 Ion implantation with heavy halogenide compounds

Publications (2)

Publication Number Publication Date
JP2011529275A JP2011529275A (ja) 2011-12-01
JP2011529275A5 true JP2011529275A5 (ja) 2012-08-30

Family

ID=41569025

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011520151A Pending JP2011529275A (ja) 2008-07-22 2009-07-22 重いハロゲン化合物を用いたイオン注入

Country Status (6)

Country Link
US (1) US7927986B2 (ja)
JP (1) JP2011529275A (ja)
KR (1) KR20110052637A (ja)
CN (1) CN102099899B (ja)
TW (1) TW201005807A (ja)
WO (1) WO2010011711A2 (ja)

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US8288255B2 (en) 2011-02-04 2012-10-16 Varian Semiconductor Equipment Associates, Inc. N-type doping of zinc telluride
KR101929070B1 (ko) * 2011-03-24 2018-12-13 엔테그리스, 아이엔씨. 비소 및 인의 클러스터 이온 주입 방법
US9070538B2 (en) * 2013-10-25 2015-06-30 Varian Semiconductor Equipment Associates, Inc. Pinched plasma bridge flood gun for substrate charge neutralization
US10249498B2 (en) * 2015-06-19 2019-04-02 Tokyo Electron Limited Method for using heated substrates for process chemistry control
JP7117354B2 (ja) * 2020-09-14 2022-08-12 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、およびプログラム

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Publication number Priority date Publication date Assignee Title
US4086102A (en) * 1976-12-13 1978-04-25 King William J Inexpensive solar cell and method therefor
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JPH05283426A (ja) * 1992-03-31 1993-10-29 Mitsubishi Electric Corp 半導体装置の製造方法
US5489550A (en) * 1994-08-09 1996-02-06 Texas Instruments Incorporated Gas-phase doping method using germanium-containing additive
JP3169337B2 (ja) * 1995-05-30 2001-05-21 キヤノン株式会社 光起電力素子及びその製造方法
JPH0922876A (ja) * 1995-07-05 1997-01-21 Toshiba Corp 半導体装置の製造方法
US5918140A (en) * 1997-06-16 1999-06-29 The Regents Of The University Of California Deposition of dopant impurities and pulsed energy drive-in
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US6319355B1 (en) * 1999-06-30 2001-11-20 Lam Research Corporation Plasma processor with coil responsive to variable amplitude rf envelope
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