JP2011528508A5 - - Google Patents

Download PDF

Info

Publication number
JP2011528508A5
JP2011528508A5 JP2011518779A JP2011518779A JP2011528508A5 JP 2011528508 A5 JP2011528508 A5 JP 2011528508A5 JP 2011518779 A JP2011518779 A JP 2011518779A JP 2011518779 A JP2011518779 A JP 2011518779A JP 2011528508 A5 JP2011528508 A5 JP 2011528508A5
Authority
JP
Japan
Prior art keywords
flow rate
organosilicon precursor
processing chamber
gas mixture
providing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011518779A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011528508A (ja
Filing date
Publication date
Priority claimed from US12/173,659 external-priority patent/US20100015816A1/en
Application filed filed Critical
Publication of JP2011528508A publication Critical patent/JP2011528508A/ja
Publication of JP2011528508A5 publication Critical patent/JP2011528508A5/ja
Pending legal-status Critical Current

Links

Images

JP2011518779A 2008-07-15 2009-06-30 障壁層と多様な液体前駆体から堆積される多孔質低ｋ膜との間の付着を促進するための方法 Pending JP2011528508A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/173,659 US20100015816A1 (en) 2008-07-15 2008-07-15 Methods to promote adhesion between barrier layer and porous low-k film deposited from multiple liquid precursors
US12/173,659 2008-07-15
PCT/US2009/049216 WO2010008930A2 (en) 2008-07-15 2009-06-30 Methods to promote adhesion between barrier layer and porous low-k film deposited from multiple liquid precursors

Publications (2)

Publication Number Publication Date
JP2011528508A JP2011528508A (ja) 2011-11-17
JP2011528508A5 true JP2011528508A5 (enExample) 2013-07-18

Family

ID=41530671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011518779A Pending JP2011528508A (ja) 2008-07-15 2009-06-30 障壁層と多様な液体前駆体から堆積される多孔質低ｋ膜との間の付着を促進するための方法

Country Status (6)

Country Link
US (1) US20100015816A1 (enExample)
JP (1) JP2011528508A (enExample)
KR (1) KR20110039556A (enExample)
CN (1) CN102099897A (enExample)
TW (1) TW201025425A (enExample)
WO (1) WO2010008930A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110241200A1 (en) * 2010-04-05 2011-10-06 International Business Machines Corporation Ultra low dielectric constant material with enhanced mechanical properties
WO2014143337A1 (en) * 2013-03-14 2014-09-18 Applied Materials, Inc. Adhesion layer to minimize dilelectric constant increase with good adhesion strength in a pecvd process
CN104103572B (zh) * 2013-04-02 2017-02-08 中芯国际集成电路制造(上海)有限公司 多孔低k介质层的形成方法及多孔低k介质层
US10510852B2 (en) 2017-11-28 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Low-k feature formation processes and structures formed thereby
KR102670993B1 (ko) * 2018-11-27 2024-05-29 버슘머트리얼즈 유에스, 엘엘씨 1-메틸-1-이소-프로폭시-실라사이클로알칸 및 이로부터 제조된 고밀도 오가노실리카 필름
US11430654B2 (en) * 2019-11-27 2022-08-30 Applied Materials, Inc. Initiation modulation for plasma deposition
KR102913505B1 (ko) * 2023-06-08 2026-01-16 에스케이트리켐 주식회사 저 유전율 실리콘 함유 박막 형성용 전구체 및 이를 이용한 저 유전율 실리콘 함유 박막 형성 방법.
KR20250016873A (ko) * 2023-07-26 2025-02-04 에스케이트리켐 주식회사 저 유전율 박막 형성용 전구체 및 상기 전구체를 이용한 저 유전율 실리콘 함유 박막 형성 방법

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH043926A (ja) * 1990-04-20 1992-01-08 Sony Corp 半導体装置の製造方法
US6340435B1 (en) * 1998-02-11 2002-01-22 Applied Materials, Inc. Integrated low K dielectrics and etch stops
JP2001035845A (ja) * 1999-07-21 2001-02-09 Nec Corp 半導体装置の製造方法及びそれに使用されるプラズマ絶縁膜の成膜装置
US6258735B1 (en) * 2000-10-05 2001-07-10 Applied Materials, Inc. Method for using bypass lines to stabilize gas flow and maintain plasma inside a deposition chamber
SG98468A1 (en) * 2001-01-17 2003-09-19 Air Prod & Chem Organosilicon precursors for interlayer dielectric films with low dielectric constants
US6518646B1 (en) * 2001-03-29 2003-02-11 Advanced Micro Devices, Inc. Semiconductor device with variable composition low-k inter-layer dielectric and method of making
US6570256B2 (en) * 2001-07-20 2003-05-27 International Business Machines Corporation Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates
US6783862B2 (en) * 2001-12-13 2004-08-31 International Business Machines Corporation Toughness, adhesion and smooth metal lines of porous low k dielectric interconnect structures
US7056560B2 (en) * 2002-05-08 2006-06-06 Applies Materials Inc. Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen by plasma-enhanced chemical vapor deposition (PECVD)
US7098149B2 (en) * 2003-03-04 2006-08-29 Air Products And Chemicals, Inc. Mechanical enhancement of dense and porous organosilicate materials by UV exposure
US6913992B2 (en) * 2003-03-07 2005-07-05 Applied Materials, Inc. Method of modifying interlayer adhesion
US8137764B2 (en) * 2003-05-29 2012-03-20 Air Products And Chemicals, Inc. Mechanical enhancer additives for low dielectric films
JP4434146B2 (ja) * 2003-11-28 2010-03-17 日本電気株式会社 多孔質絶縁膜及びその製造方法並びに多孔質絶縁膜を用いた半導体装置
US7030041B2 (en) * 2004-03-15 2006-04-18 Applied Materials Inc. Adhesion improvement for low k dielectrics
US7547643B2 (en) * 2004-03-31 2009-06-16 Applied Materials, Inc. Techniques promoting adhesion of porous low K film to underlying barrier layer
US7102232B2 (en) * 2004-04-19 2006-09-05 International Business Machines Corporation Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layer
US7166544B2 (en) * 2004-09-01 2007-01-23 Applied Materials, Inc. Method to deposit functionally graded dielectric films via chemical vapor deposition using viscous precursors
KR20070083745A (ko) * 2004-09-22 2007-08-24 벤자민 데이비드 해튼 유기실리카 물질 내의 가교 유기 기의 변환방법
US7501354B2 (en) * 2005-01-18 2009-03-10 Applied Materials, Inc. Formation of low K material utilizing process having readily cleaned by-products
US20060156980A1 (en) * 2005-01-19 2006-07-20 Samsung Electronics Co., Ltd. Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus
US7259111B2 (en) * 2005-01-19 2007-08-21 Applied Materials, Inc. Interface engineering to improve adhesion between low k stacks
JP5324734B2 (ja) * 2005-01-21 2013-10-23 インターナショナル・ビジネス・マシーンズ・コーポレーション 誘電体材料とその製造方法
US7265437B2 (en) * 2005-03-08 2007-09-04 International Business Machines Corporation Low k dielectric CVD film formation process with in-situ imbedded nanolayers to improve mechanical properties
US7189658B2 (en) * 2005-05-04 2007-03-13 Applied Materials, Inc. Strengthening the interface between dielectric layers and barrier layers with an oxide layer of varying composition profile
JP2006339506A (ja) * 2005-06-03 2006-12-14 Semiconductor Process Laboratory Co Ltd 成膜方法及び半導体装置の製造方法
US7390757B2 (en) * 2005-11-15 2008-06-24 Applied Materials, Inc. Methods for improving low k FSG film gap-fill characteristics
US7381659B2 (en) * 2005-11-22 2008-06-03 International Business Machines Corporation Method for reducing film stress for SiCOH low-k dielectric materials
JP5093479B2 (ja) * 2005-11-24 2012-12-12 日本電気株式会社 多孔質絶縁膜の形成方法
JP2007258403A (ja) * 2006-03-23 2007-10-04 United Microelectronics Corp 多孔性低誘電率薄膜及びその製作方法
US7297376B1 (en) * 2006-07-07 2007-11-20 Applied Materials, Inc. Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers
US7598183B2 (en) * 2006-09-20 2009-10-06 Applied Materials, Inc. Bi-layer capping of low-K dielectric films
US7799377B2 (en) * 2006-12-07 2010-09-21 Electronics And Telecommunications Research Institute Organic/inorganic thin film deposition method
US7615482B2 (en) * 2007-03-23 2009-11-10 International Business Machines Corporation Structure and method for porous SiCOH dielectric layers and adhesion promoting or etch stop layers having increased interfacial and mechanical strength

Similar Documents

Publication Publication Date Title
US11776807B2 (en) Plasma enhanced deposition processes for controlled formation of oxygen containing thin films
US11562900B2 (en) Formation of SiOC thin films
TWI763839B (zh) 電漿增強型原子層沉積製程和通過其來選擇性地於基板的介電表面上沉積氧化物的方法
US11501965B2 (en) Plasma enhanced deposition processes for controlled formation of metal oxide thin films
JP2008135755A5 (enExample)
CN103109358A (zh) 用于氧化硅原子层沉积的嵌入式催化剂
KR102802153B1 (ko) 저 저항률 금속 함유 필름들을 성장시키기 위한 방법들
US20200040454A1 (en) Method to increase deposition rate of ald process
KR100920456B1 (ko) 플라스마 원자층 증착 방법을 이용한 비촉매 코발트 나노 막대의 제조 방법 및 반도체 소자