JP2011522402A5 - - Google Patents

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Publication number
JP2011522402A5
JP2011522402A5 JP2011509604A JP2011509604A JP2011522402A5 JP 2011522402 A5 JP2011522402 A5 JP 2011522402A5 JP 2011509604 A JP2011509604 A JP 2011509604A JP 2011509604 A JP2011509604 A JP 2011509604A JP 2011522402 A5 JP2011522402 A5 JP 2011522402A5
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JP
Japan
Prior art keywords
mosfet
storage
jfet component
region
jfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2011509604A
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English (en)
Japanese (ja)
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JP5529854B2 (ja
JP2011522402A (ja
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Publication date
Priority claimed from US12/119,367 external-priority patent/US8269263B2/en
Application filed filed Critical
Publication of JP2011522402A publication Critical patent/JP2011522402A/ja
Publication of JP2011522402A5 publication Critical patent/JP2011522402A5/ja
Application granted granted Critical
Publication of JP5529854B2 publication Critical patent/JP5529854B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2011509604A 2008-05-12 2009-05-11 パワー電界効果トランジスタ Active JP5529854B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/119,367 2008-05-12
US12/119,367 US8269263B2 (en) 2008-05-12 2008-05-12 High current density power field effect transistor
PCT/US2009/043518 WO2009140224A2 (en) 2008-05-12 2009-05-11 Power field effect transistor

Publications (3)

Publication Number Publication Date
JP2011522402A JP2011522402A (ja) 2011-07-28
JP2011522402A5 true JP2011522402A5 (enExample) 2012-06-28
JP5529854B2 JP5529854B2 (ja) 2014-06-25

Family

ID=41266162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011509604A Active JP5529854B2 (ja) 2008-05-12 2009-05-11 パワー電界効果トランジスタ

Country Status (7)

Country Link
US (1) US8269263B2 (enExample)
EP (1) EP2279525A4 (enExample)
JP (1) JP5529854B2 (enExample)
KR (1) KR101388821B1 (enExample)
CN (1) CN102057490B (enExample)
TW (1) TWI407565B (enExample)
WO (1) WO2009140224A2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10026835B2 (en) 2009-10-28 2018-07-17 Vishay-Siliconix Field boosted metal-oxide-semiconductor field effect transistor
US8669613B2 (en) * 2010-09-29 2014-03-11 Alpha & Omega Semiconductor, Inc. Semiconductor device die with integrated MOSFET and low forward voltage diode-connected enhancement mode JFET and method
CN102931191B (zh) * 2012-10-31 2016-03-02 成都芯源系统有限公司 半导体器件及其制造方法
US9559198B2 (en) 2013-08-27 2017-01-31 Nxp Usa, Inc. Semiconductor device and method of manufacture therefor
US9837526B2 (en) 2014-12-08 2017-12-05 Nxp Usa, Inc. Semiconductor device wtih an interconnecting semiconductor electrode between first and second semiconductor electrodes and method of manufacture therefor
US9443845B1 (en) 2015-02-23 2016-09-13 Freescale Semiconductor, Inc. Transistor body control circuit and an integrated circuit
US9472662B2 (en) * 2015-02-23 2016-10-18 Freescale Semiconductor, Inc. Bidirectional power transistor with shallow body trench
US10348295B2 (en) 2015-11-19 2019-07-09 Nxp Usa, Inc. Packaged unidirectional power transistor and control circuit therefore
CN109216440B (zh) * 2018-09-17 2021-08-17 电子科技大学 具有双向电平传输的凹槽型漏极结构的mosfet器件
CN109244135B (zh) * 2018-09-17 2021-03-30 电子科技大学 基于沟槽工艺的超结型双向阻断mos器件及制备方法
CN112820775A (zh) * 2021-01-07 2021-05-18 重庆邮电大学 一种具有电子积累效应的soi-ldmos器件
CN113097310B (zh) * 2021-04-02 2023-03-24 重庆邮电大学 一种具有电子积累效应的鳍式EAFin-LDMOS器件

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2606404B2 (ja) * 1990-04-06 1997-05-07 日産自動車株式会社 半導体装置
US5396085A (en) * 1993-12-28 1995-03-07 North Carolina State University Silicon carbide switching device with rectifying-gate
US5581100A (en) 1994-08-30 1996-12-03 International Rectifier Corporation Trench depletion MOSFET
US5844273A (en) 1994-12-09 1998-12-01 Fuji Electric Co. Vertical semiconductor device and method of manufacturing the same
US5661322A (en) * 1995-06-02 1997-08-26 Siliconix Incorporated Bidirectional blocking accumulation-mode trench power MOSFET
US5637898A (en) * 1995-12-22 1997-06-10 North Carolina State University Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance
US6351018B1 (en) * 1999-02-26 2002-02-26 Fairchild Semiconductor Corporation Monolithically integrated trench MOSFET and Schottky diode
EP1170803A3 (en) 2000-06-08 2002-10-09 Siliconix Incorporated Trench gate MOSFET and method of making the same
US6426541B2 (en) * 2000-07-20 2002-07-30 Apd Semiconductor, Inc. Schottky diode having increased forward current with improved reverse bias characteristics and method of fabrication
JP2002270840A (ja) * 2001-03-09 2002-09-20 Toshiba Corp パワーｍｏｓｆｅｔ
JP4839548B2 (ja) * 2001-08-29 2011-12-21 株式会社デンソー 炭化珪素半導体装置及びその製造方法
US6878994B2 (en) * 2002-08-22 2005-04-12 International Rectifier Corporation MOSgated device with accumulated channel region and Schottky contact
US6878993B2 (en) * 2002-12-20 2005-04-12 Hamza Yilmaz Self-aligned trench MOS junction field-effect transistor for high-frequency applications
JP4265234B2 (ja) * 2003-02-13 2009-05-20 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP2007503108A (ja) * 2003-08-21 2007-02-15 フルテック プロプリエタリー リミテッド 集積化電子切断回路、方法およびシステム
US7417266B1 (en) * 2004-06-10 2008-08-26 Qspeed Semiconductor Inc. MOSFET having a JFET embedded as a body diode
CA2576960A1 (en) 2004-07-08 2007-01-04 Semisouth Laboratories, Inc. Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the same
JP2006147700A (ja) * 2004-11-17 2006-06-08 Sanyo Electric Co Ltd 半導体装置
US7285822B2 (en) * 2005-02-11 2007-10-23 Alpha & Omega Semiconductor, Inc. Power MOS device
JP2006237066A (ja) 2005-02-22 2006-09-07 Toshiba Corp 半導体装置
US7504306B2 (en) * 2005-04-06 2009-03-17 Fairchild Semiconductor Corporation Method of forming trench gate field effect transistor with recessed mesas
JP2007059636A (ja) * 2005-08-25 2007-03-08 Renesas Technology Corp Ｄｍｏｓｆｅｔおよびプレーナ型ｍｏｓｆｅｔ
US7504676B2 (en) 2006-05-31 2009-03-17 Alpha & Omega Semiconductor, Ltd. Planar split-gate high-performance MOSFET structure and manufacturing method

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