JP2011522119A - 温度勾配型化学気相成長(tge−cvd) - Google Patents
温度勾配型化学気相成長(tge−cvd) Download PDFInfo
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- JP2011522119A JP2011522119A JP2011511083A JP2011511083A JP2011522119A JP 2011522119 A JP2011522119 A JP 2011522119A JP 2011511083 A JP2011511083 A JP 2011511083A JP 2011511083 A JP2011511083 A JP 2011511083A JP 2011522119 A JP2011522119 A JP 2011522119A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
本出願は、正規の出願であり、参照として本明細書に組み込む2008年5月28日出願の米国仮特許出願第61/056619号の優先権の利益を主張するものである。
本発明は、温度勾配型化学気相成長のための方法およびシステムに関する。
Claims (13)
- 基板上に被膜を化学気相成長させるために構成されたチャンバであって、前記基板を支持するように構成された下側加熱器と、前記下側加熱器の上方に特定の垂直距離で配設された上側加熱器とを内部に含むチャンバを備える装置であって、前記上側加熱器が、前記チャンバ内部のガス分配装置から基板に向けての反応ガスの垂直な通過を可能とする貫通穴を有して成る装置。
- 前記上側加熱器の面積被覆率が50%よりも大きい請求項1に記載の装置。
- 前記加熱器間の垂直距離の調節を容易にするために、前記上側加熱器と前記下側加熱器の一方が垂直運動できるように、または両方が互いに対して垂直運動できるように構成された請求項1または2に記載の装置。
- 前記上側加熱器が前記ガス分配装置と一体化される請求項1、2、または3に記載の装置。
- 基板上に被膜を化学気相成長させるように構成されたチャンバであって、前記基板を支持するように構成された下側加熱器と、前記下側加熱器の上方に特定の垂直距離で配設された上側加熱器とを内部に含むチャンバを備える装置であって、前記上側加熱器が、前記基板に向けて反応ガスが垂直に通ることができるようにする貫通穴を有するガス分配装置の上方に位置決めされて成る装置。
- 基板上に被膜を化学気相成長させるために構成されたチャンバであって、前記基板を支持するように構成された下側加熱器と、前記下側加熱器の上方に特定の垂直距離で配設された上側加熱器とを内部に含むチャンバを備える装置であって、前記上側加熱器が、基板に向けて反応ガスが垂直に通ることができるようにするために貫通穴を有するガス分配装置の周囲に円周方向で位置決めされる装置。
- 前記底部加熱器が冷却要素を含む請求項1〜6のいずれか一項に記載の装置。
- 前記上側加熱器と下側加熱器の一方または両方が、プラズマを発生させるために電圧を印加できるように構成される請求項1〜7のいずれか一項に記載の装置。
- 基板が下側加熱器の近傍に位置決めされる真空チャンバ内で、上側加熱器と下側加熱器の間に温度勾配を確立するステップと、前記基板上に堆積を形成するために反応ガスを前記チャンバ内に垂直に導入するステップと、を含む方法。
- 前記上側加熱器の温度が前記下側加熱器よりも高く維持される請求項9に記載の方法。
- 前記下側加熱器の温度が前記上側加熱器よりも高く維持される請求項9に記載の方法。
- さらに、真空ポンプを使用して前記チャンバから反応ガスを排気するステップを含む請求項9、10、または11に記載の方法。
- 前記反応ガスが、前記上側加熱器の穴を通って垂直に流れるようにされてから前記基板の上面に当たる請求項9から11のいずれか一項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US5661908P | 2008-05-28 | 2008-05-28 | |
US61/056,619 | 2008-05-28 | ||
PCT/GB2009/001326 WO2009144456A1 (en) | 2008-05-28 | 2009-05-27 | Thermal gradient enhanced chemical vapour deposition (tge-cvd) |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011522119A true JP2011522119A (ja) | 2011-07-28 |
JP5674645B2 JP5674645B2 (ja) | 2015-02-25 |
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ID=40910839
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2011511083A Expired - Fee Related JP5674645B2 (ja) | 2008-05-28 | 2009-05-27 | 温度勾配型化学気相成長(tge−cvd) |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP2294244B1 (ja) |
JP (1) | JP5674645B2 (ja) |
KR (1) | KR20110025185A (ja) |
TW (1) | TWI461568B (ja) |
WO (1) | WO2009144456A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110070370A1 (en) * | 2008-05-28 | 2011-03-24 | Aixtron Ag | Thermal gradient enhanced chemical vapour deposition (tge-cvd) |
TW201122149A (en) * | 2009-12-31 | 2011-07-01 | Univ Nat Chiao Tung | Reactor, chemical vapor deposition reactor, and metal organic chemical vapor deposition reactor |
EP2580368B1 (en) * | 2010-06-11 | 2015-11-18 | Tokyo Electron Limited | Apparatus for chemical vapor deposition control |
TWI697974B (zh) * | 2015-04-29 | 2020-07-01 | 美商應用材料股份有限公司 | 用於校正基板變形的方法與設備 |
EP3184666B1 (en) * | 2015-12-23 | 2018-06-13 | Singulus Technologies AG | System and method for gas phase deposition |
CN113981416B (zh) * | 2021-12-29 | 2022-03-22 | 上海陛通半导体能源科技股份有限公司 | 多功能晶圆预处理腔及化学气相沉积设备 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000087224A (ja) * | 1998-09-11 | 2000-03-28 | Ulvac Japan Ltd | 成膜装置 |
JP2001274103A (ja) * | 2000-01-20 | 2001-10-05 | Sumitomo Electric Ind Ltd | 半導体製造装置用ガスシャワー体 |
US20020132374A1 (en) * | 2001-02-02 | 2002-09-19 | Micron Technology, Inc. | Method for controlling deposition of dielectric films |
JP2002348670A (ja) * | 2001-05-18 | 2002-12-04 | Tokyo Electron Ltd | 冷却機構及び処理装置 |
JP2004047887A (ja) * | 2002-07-15 | 2004-02-12 | Asm Japan Kk | 枚葉式cvd装置 |
JP2006332676A (ja) * | 2005-05-27 | 2006-12-07 | Asm Japan Kk | 誘電率が低いナノ粒子膜の製造方法 |
WO2008042691A2 (en) * | 2006-09-29 | 2008-04-10 | Tokyo Electron Limited | Processing system containing a hot filament hydrogen radical source for integrated substrate processing |
JP2008530724A (ja) * | 2005-02-23 | 2008-08-07 | モトローラ・インコーポレイテッド | カーボンナノチューブ成長のための装置及びプロセス |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04277627A (ja) * | 1991-03-06 | 1992-10-02 | Nec Corp | 枚葉型プラズマ化学気相成長装置 |
JP2001319885A (ja) * | 2000-03-02 | 2001-11-16 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体製造方法 |
KR100965758B1 (ko) * | 2003-05-22 | 2010-06-24 | 주성엔지니어링(주) | 액정표시장치용 플라즈마 강화 화학기상증착 장치의샤워헤드 어셈블리 |
JP5045000B2 (ja) * | 2006-06-20 | 2012-10-10 | 東京エレクトロン株式会社 | 成膜装置、ガス供給装置、成膜方法及び記憶媒体 |
-
2009
- 2009-05-27 EP EP09754101.5A patent/EP2294244B1/en active Active
- 2009-05-27 JP JP2011511083A patent/JP5674645B2/ja not_active Expired - Fee Related
- 2009-05-27 WO PCT/GB2009/001326 patent/WO2009144456A1/en active Application Filing
- 2009-05-27 KR KR1020107029284A patent/KR20110025185A/ko not_active Application Discontinuation
- 2009-05-27 TW TW098117860A patent/TWI461568B/zh active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000087224A (ja) * | 1998-09-11 | 2000-03-28 | Ulvac Japan Ltd | 成膜装置 |
JP2001274103A (ja) * | 2000-01-20 | 2001-10-05 | Sumitomo Electric Ind Ltd | 半導体製造装置用ガスシャワー体 |
US20020132374A1 (en) * | 2001-02-02 | 2002-09-19 | Micron Technology, Inc. | Method for controlling deposition of dielectric films |
JP2002348670A (ja) * | 2001-05-18 | 2002-12-04 | Tokyo Electron Ltd | 冷却機構及び処理装置 |
JP2004047887A (ja) * | 2002-07-15 | 2004-02-12 | Asm Japan Kk | 枚葉式cvd装置 |
JP2008530724A (ja) * | 2005-02-23 | 2008-08-07 | モトローラ・インコーポレイテッド | カーボンナノチューブ成長のための装置及びプロセス |
JP2006332676A (ja) * | 2005-05-27 | 2006-12-07 | Asm Japan Kk | 誘電率が低いナノ粒子膜の製造方法 |
WO2008042691A2 (en) * | 2006-09-29 | 2008-04-10 | Tokyo Electron Limited | Processing system containing a hot filament hydrogen radical source for integrated substrate processing |
Also Published As
Publication number | Publication date |
---|---|
TWI461568B (zh) | 2014-11-21 |
KR20110025185A (ko) | 2011-03-09 |
WO2009144456A1 (en) | 2009-12-03 |
EP2294244B1 (en) | 2016-10-05 |
JP5674645B2 (ja) | 2015-02-25 |
EP2294244A1 (en) | 2011-03-16 |
TW201005120A (en) | 2010-02-01 |
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