JP2011515828A - プラズマ処理システムにおける面積比変更のための方法および装置 - Google Patents
プラズマ処理システムにおける面積比変更のための方法および装置 Download PDFInfo
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Abstract
【選択図】図5
Description
ここで、Mは、図3のコンダクタンス曲線から決定された傾きである。
Claims (20)
- 基板を処理するためのプラズマ処理チャンバを有するプラズマ処理システムであって、前記プラズマ処理チャンバは、
第1の上側電極部分および第2の上側電極部分を有し、前記第1の上側電極部分は、前記第2の上側電極部分を環状に取り囲み、前記第1の上側電極部分および前記第2の上側電極部分はいずれも、前記処理中接地されている、上側電極と、
第1の下側電極部分および第2の下側電極部分を有し、前記第1の下側電極部分は接地され、前記第2の下側電極部分を環状に取り囲み、前記第2の下側電極部分は、前記処理中に前記基板を支持するよう構成された基板支持面を有し、前記上側電極および前記下側電極の少なくとも一方は、前記基板支持面に対して垂直な方向に移動可能である、下側電極と、
RFエネルギを前記第2の下側電極部分に供給するためのRF電源と、
を備え、
前記第1の下側電極部分の上面は、前記第1の下側電極部分の上面と前記第1の上側電極部分の下面との間の第1のギャップが、前記基板支持面と前記第2の上側電極部分の基板対向面との間の第2のギャップよりも小さくなるように、前記基板支持面に対して平滑ではない、プラズマ処理システム。 - 請求項1に記載のプラズマ処理システムであって、前記上側電極だけが移動可能である、プラズマ処理システム。
- 請求項1に記載のプラズマ処理システムであって、前記下側電極だけが移動可能である、プラズマ処理システム。
- 請求項1に記載のプラズマ処理システムであって、前記上側電極および前記下側電極の両方が移動可能である、プラズマ処理システム。
- 請求項1に記載のプラズマ処理システムであって、前記第1の上側電極部分の前記下面は、前記第2の上側電極部分の前記基板対向面に対して平滑である、プラズマ処理システム。
- 請求項1に記載のプラズマ処理システムであって、前記第1の上側電極部分の前記下面は、前記第2の上側電極部分の前記基板対向面に対して平滑でない、プラズマ処理システム。
- 請求項1に記載のプラズマ処理システムであって、
前記プラズマ処理システムは、少なくとも2つのレジーム中に動作可能であるよう構成され、
前記2つのレジームの内の第1のレジームは、前記第2の下側電極部分の前記基板支持面と前記第2の上側電極部分の前記基板対向面との間にプラズマが維持されるように、前記上側電極および前記下側電極を配置することを含み、前記第1のレジームにおいて、前記プラズマは、さらに、前記第1の下側電極部分の前記上面と前記第1の上側電極部分の前記下面との間に維持され、
前記2つのレジームの内の第2のレジームは、前記第2の下側電極部分の前記基板支持面と前記第2の上側電極部分の前記基板対向面との間に前記プラズマが維持されるように、前記上側電極および前記下側電極を配置することを含み、前記第2のレジームにおいて、前記プラズマは、前記第1の下側電極部分の前記上面と前記第1の上側電極部分の前記下面との間には維持されない、プラズマ処理システム。 - 請求項1に記載のプラズマ処理システムであって、RF結合の面積比は、前記第2のレジームにおいて約1:1である、プラズマ処理システム。
- 基板を処理するためのプラズマ処理チャンバを有するプラズマ処理システムであって、前記プラズマ処理チャンバは、
第1の上側電極部分および第2の上側電極部分を有し、前記第1の上側電極部分は、前記第2の上側電極部分を環状に取り囲み、前記第1の上側電極部分および前記第2の上側電極部分はいずれも、前記処理中接地されている、上側電極と、
第1の下側電極部分および第2の下側電極部分を有し、前記第1の下側電極部分は接地され、前記第2の下側電極部分を環状に取り囲み、前記第2の下側電極部分は、前記処理中に前記基板を支持するよう構成された基板支持面を有し、前記上側電極および前記下側電極の少なくとも一方は、前記基板支持面に対して垂直な方向に移動可能である、下側電極と、
RFエネルギを前記第2の下側電極部分に供給するためのRF電源と、
を備え、
前記第1の上側電極部分の下面は、前記第1の上側電極部分の前記下面と前記第1の下側電極部分の上面との間の第1のギャップが、前記基板支持面と前記第2の上側電極部分の基板対向面との間の第2のギャップよりも小さくなるように、前記第2の上側電極部分の前記基板対向面に対して平滑でない、プラズマ処理システム。 - 請求項9に記載のプラズマ処理システムであって、前記上側電極だけが移動可能である、プラズマ処理システム。
- 請求項9に記載のプラズマ処理システムであって、前記下側電極だけが移動可能である、プラズマ処理システム。
- 請求項9に記載のプラズマ処理システムであって、前記上側電極および前記下側電極の両方が移動可能である、プラズマ処理システム。
- 請求項9に記載のプラズマ処理システムであって、前記第1の下側電極部分の前記上面は、前記第2の下側電極部分の前記基板支持面に対して平滑である、プラズマ処理システム。
- 請求項9に記載のプラズマ処理システムであって、前記第1の下側電極部分の前記上面は、前記第2の下側電極部分の前記基板支持面に対して平滑でない、プラズマ処理システム。
- 請求項9に記載のプラズマ処理システムであって、
前記プラズマ処理システムは、少なくとも2つのレジーム中に動作可能であるよう構成され、
前記2つのレジームの内の第1のレジームは、前記基板支持面と前記第2の上側電極部分の前記基板対向面との間にプラズマが維持されるように、前記上側電極および前記下側電極を配置することを含み、前記第1のレジームにおいて、前記プラズマは、さらに、前記第1の下側電極部分の前記上面と前記第1の上側電極部分の前記下面との間に維持され、
前記2つのレジームの内の第2のレジームは、前記基板支持面と前記第2の上側電極部分の前記基板対向面との間にプラズマが維持されるように、前記上側電極および前記下側電極を配置することを含み、前記第2のレジームにおいて、前記プラズマは、前記第1の下側電極部分の前記上面と前記第1の上側電極部分の前記下面との間には維持されない、プラズマ処理システム。 - 請求項9に記載のプラズマ処理システムであって、RF結合の面積比は、前記第2のレジームにおいて約1:1である、プラズマ処理システム。
- 基板を処理するためのプラズマ処理チャンバを有するプラズマ処理システムにおいて前記基板を処理する方法であって、
前記プラズマ処理チャンバの下側電極の基板支持面上に前記基板を配置する工程と、
第1のレジームで前記プラズマ処理チャンバを処理する工程と、
前記第1のレジームとは異なる第2のレジームで前記プラズマ処理を行う工程と、
を備え、
前記第1のレジームは、RF結合の第1の面積比を有し、前記第2のレジームは、RF結合の前記第1の面積比とは異なるRF結合の第2の面積比を有し、前記プラズマ処理チャンバは、少なくとも部分的に、前記基板支持面に対して垂直な方向に上側電極および下側電極の一方を移動させることによって、前記第1のレジームと前記第2のレジームとの間を遷移する、方法。 - 請求項17に記載の方法であって、
前記上側電極は、第1の上側電極部分および第2の上側電極部分を有し、前記第1の上側電極部分は、前記第2の上側電極部分を環状に取り囲み、前記第1の上側電極部分および前記第2の上側電極部分はいずれも、前記処理中に接地され、
前記下側電極は、第1の下側電極部分および第2の下側電極部分を有し、前記第1の下側電極部分は、接地され、前記第2の下側電極部分を環状に取り囲み、前記第2の下側電極部分は、前記処理中に前記基板を支持するよう構成された前記基板支持面を有し、
前記第1の上側電極部分の下面は、前記第1の上側電極部分の前記下面と前記第1の下側電極部分の上面との間の第1のギャップが、前記基板支持面と前記第2の上側電極部分の基板対向面との間の第2のギャップよりも小さくなるように、前記第2の上側電極部分の前記基板対向面に対して平滑でない、方法。 - 請求項17に記載の方法であって、
前記上側電極は、第1の上側電極部分および第2の上側電極部分を有し、前記第1の上側電極部分は、前記第2の上側電極部分を環状に取り囲み、前記第1の上側電極部分および前記第2の上側電極部分はいずれも、前記処理中に接地され、
前記下側電極は、第1の下側電極部分および第2の下側電極部分を有し、前記第1の下側電極部分は、接地され、前記第2の下側電極部分を環状に取り囲み、前記第2の下側電極部分は、前記処理中に前記基板を支持するよう構成された前記基板支持面を有し、
前記第1の下側電極部分の上面は、前記第1の下側電極部分の前記上面と前記第1の上側電極部分の下面との間の第1のギャップが、前記基板支持面と前記第2の上側電極部分の基板対向面との間の第2のギャップよりも小さくなるように、前記第2の下側電極部分の前記基板支持面に対して平滑でない、方法。 - 請求項17に記載の方法であって、前記下側電極だけが移動可能である、方法。
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