JP2011512655A5 - - Google Patents

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Publication number
JP2011512655A5
JP2011512655A5 JP2010546142A JP2010546142A JP2011512655A5 JP 2011512655 A5 JP2011512655 A5 JP 2011512655A5 JP 2010546142 A JP2010546142 A JP 2010546142A JP 2010546142 A JP2010546142 A JP 2010546142A JP 2011512655 A5 JP2011512655 A5 JP 2011512655A5
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JP
Japan
Prior art keywords
processor
short pulse
power supply
ion
voltage power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010546142A
Other languages
English (en)
Japanese (ja)
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JP2011512655A (ja
Filing date
Publication date
Priority claimed from US12/029,710 external-priority patent/US7586100B2/en
Application filed filed Critical
Publication of JP2011512655A publication Critical patent/JP2011512655A/ja
Publication of JP2011512655A5 publication Critical patent/JP2011512655A5/ja
Pending legal-status Critical Current

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JP2010546142A 2008-02-12 2009-02-12 飛行時間イオン検出器を用いるプラズマドーピングプロセスにおける閉ループ制御及びプロセス最適化 Pending JP2011512655A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/029,710 US7586100B2 (en) 2008-02-12 2008-02-12 Closed loop control and process optimization in plasma doping processes using a time of flight ion detector
PCT/US2009/033928 WO2009102871A2 (en) 2008-02-12 2009-02-12 Closed loop control and process optimization in plasma doping processes using a time of flight ion detector

Publications (2)

Publication Number Publication Date
JP2011512655A JP2011512655A (ja) 2011-04-21
JP2011512655A5 true JP2011512655A5 (enExample) 2012-03-01

Family

ID=40938101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010546142A Pending JP2011512655A (ja) 2008-02-12 2009-02-12 飛行時間イオン検出器を用いるプラズマドーピングプロセスにおける閉ループ制御及びプロセス最適化

Country Status (6)

Country Link
US (1) US7586100B2 (enExample)
JP (1) JP2011512655A (enExample)
KR (1) KR20100137445A (enExample)
CN (1) CN101978476B (enExample)
TW (1) TW200943366A (enExample)
WO (1) WO2009102871A2 (enExample)

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US20090104719A1 (en) * 2007-10-23 2009-04-23 Varian Semiconductor Equipment Associates, Inc. Plasma Doping System with In-Situ Chamber Condition Monitoring
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US8501631B2 (en) 2009-11-19 2013-08-06 Lam Research Corporation Plasma processing system control based on RF voltage
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US8907307B2 (en) * 2011-03-11 2014-12-09 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for maskless patterned implantation
US8728587B2 (en) * 2011-06-24 2014-05-20 Varian Semiconductor Equipment Associates, Inc. Closed loop process control of plasma processed materials
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US10128090B2 (en) 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
US9390893B2 (en) 2012-02-22 2016-07-12 Lam Research Corporation Sub-pulsing during a state
US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US9842725B2 (en) 2013-01-31 2017-12-12 Lam Research Corporation Using modeling to determine ion energy associated with a plasma system
US9171699B2 (en) 2012-02-22 2015-10-27 Lam Research Corporation Impedance-based adjustment of power and frequency
US9368329B2 (en) 2012-02-22 2016-06-14 Lam Research Corporation Methods and apparatus for synchronizing RF pulses in a plasma processing system
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9320126B2 (en) 2012-12-17 2016-04-19 Lam Research Corporation Determining a value of a variable on an RF transmission model
US9295148B2 (en) * 2012-12-14 2016-03-22 Lam Research Corporation Computation of statistics for statistical data decimation
US9197196B2 (en) 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US8916056B2 (en) * 2012-10-11 2014-12-23 Varian Semiconductor Equipment Associates, Inc. Biasing system for a plasma processing apparatus
US9620337B2 (en) 2013-01-31 2017-04-11 Lam Research Corporation Determining a malfunctioning device in a plasma system
US9779196B2 (en) 2013-01-31 2017-10-03 Lam Research Corporation Segmenting a model within a plasma system
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US9070538B2 (en) * 2013-10-25 2015-06-30 Varian Semiconductor Equipment Associates, Inc. Pinched plasma bridge flood gun for substrate charge neutralization
EP3090608B1 (en) * 2014-01-02 2021-09-01 DH Technologies Development PTE. Ltd. Homogenization of the pulsed electric field created in a ring stack ion accelerator
US9594105B2 (en) 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
JP6211962B2 (ja) * 2014-03-17 2017-10-11 株式会社東芝 イオンビームの純度監視装置、方法及びプログラム
US10950421B2 (en) 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
US9336998B2 (en) 2014-05-09 2016-05-10 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for dynamic control of ion beam energy and angle
JP6608585B2 (ja) * 2014-08-19 2019-11-20 株式会社アヤボ 粒子計測方法および装置
TWI574296B (zh) * 2014-12-04 2017-03-11 萬機科技股份有限公司 功率輸出產生系統與適用於週期性波形之方法
US10049857B2 (en) 2014-12-04 2018-08-14 Mks Instruments, Inc. Adaptive periodic waveform controller
US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
US10553411B2 (en) 2015-09-10 2020-02-04 Taiwan Semiconductor Manufacturing Co., Ltd. Ion collector for use in plasma systems
US11570188B2 (en) 2015-12-28 2023-01-31 Sixgill Ltd. Dark web monitoring, analysis and alert system and method
US11476084B2 (en) 2019-09-10 2022-10-18 Applied Materials, Inc. Apparatus and techniques for ion energy measurement in pulsed ion beams
US12387921B2 (en) * 2020-06-15 2025-08-12 Hitachi High-Tech Corporation Apparatus diagnostic apparatus, apparatus diagnostic method, plasma processing apparatus and semiconductor device manufacturing system

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