JP2011512655A - 飛行時間イオン検出器を用いるプラズマドーピングプロセスにおける閉ループ制御及びプロセス最適化 - Google Patents

飛行時間イオン検出器を用いるプラズマドーピングプロセスにおける閉ループ制御及びプロセス最適化 Download PDF

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JP2011512655A
JP2011512655A JP2010546142A JP2010546142A JP2011512655A JP 2011512655 A JP2011512655 A JP 2011512655A JP 2010546142 A JP2010546142 A JP 2010546142A JP 2010546142 A JP2010546142 A JP 2010546142A JP 2011512655 A JP2011512655 A JP 2011512655A
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ions
plasma
spectrum
ion
plasma doping
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Japanese (ja)
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JP2011512655A5 (enExample
Inventor
エム ラージ デイヴェイン
ゴデット ルドヴィック
ジー リンジー バーナード
ジェイ ミラー ティモシー
ディー パパスリオティス ジョージ
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ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
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Publication of JP2011512655A publication Critical patent/JP2011512655A/ja
Publication of JP2011512655A5 publication Critical patent/JP2011512655A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
JP2010546142A 2008-02-12 2009-02-12 飛行時間イオン検出器を用いるプラズマドーピングプロセスにおける閉ループ制御及びプロセス最適化 Pending JP2011512655A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/029,710 US7586100B2 (en) 2008-02-12 2008-02-12 Closed loop control and process optimization in plasma doping processes using a time of flight ion detector
PCT/US2009/033928 WO2009102871A2 (en) 2008-02-12 2009-02-12 Closed loop control and process optimization in plasma doping processes using a time of flight ion detector

Publications (2)

Publication Number Publication Date
JP2011512655A true JP2011512655A (ja) 2011-04-21
JP2011512655A5 JP2011512655A5 (enExample) 2012-03-01

Family

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Family Applications (1)

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JP2010546142A Pending JP2011512655A (ja) 2008-02-12 2009-02-12 飛行時間イオン検出器を用いるプラズマドーピングプロセスにおける閉ループ制御及びプロセス最適化

Country Status (6)

Country Link
US (1) US7586100B2 (enExample)
JP (1) JP2011512655A (enExample)
KR (1) KR20100137445A (enExample)
CN (1) CN101978476B (enExample)
TW (1) TW200943366A (enExample)
WO (1) WO2009102871A2 (enExample)

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* Cited by examiner, † Cited by third party
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JP2015176814A (ja) * 2014-03-17 2015-10-05 株式会社東芝 イオンビームの純度監視装置、方法及びプログラム
JP2017509102A (ja) * 2014-01-02 2017-03-30 ディーエイチ テクノロジーズ デベロップメント プライベート リミテッド リングスタックイオン加速器中で生成されたパルス化電場の均質化

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US8501631B2 (en) 2009-11-19 2013-08-06 Lam Research Corporation Plasma processing system control based on RF voltage
TWI424796B (zh) * 2010-02-12 2014-01-21 Advanced Micro Fab Equip Inc Plasma processing device with diffusion dissociation region
US8907307B2 (en) * 2011-03-11 2014-12-09 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for maskless patterned implantation
US8728587B2 (en) * 2011-06-24 2014-05-20 Varian Semiconductor Equipment Associates, Inc. Closed loop process control of plasma processed materials
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US10128090B2 (en) 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
US9390893B2 (en) 2012-02-22 2016-07-12 Lam Research Corporation Sub-pulsing during a state
US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US9842725B2 (en) 2013-01-31 2017-12-12 Lam Research Corporation Using modeling to determine ion energy associated with a plasma system
US9171699B2 (en) 2012-02-22 2015-10-27 Lam Research Corporation Impedance-based adjustment of power and frequency
US9368329B2 (en) 2012-02-22 2016-06-14 Lam Research Corporation Methods and apparatus for synchronizing RF pulses in a plasma processing system
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9320126B2 (en) 2012-12-17 2016-04-19 Lam Research Corporation Determining a value of a variable on an RF transmission model
US9295148B2 (en) * 2012-12-14 2016-03-22 Lam Research Corporation Computation of statistics for statistical data decimation
US9197196B2 (en) 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US8916056B2 (en) * 2012-10-11 2014-12-23 Varian Semiconductor Equipment Associates, Inc. Biasing system for a plasma processing apparatus
US9620337B2 (en) 2013-01-31 2017-04-11 Lam Research Corporation Determining a malfunctioning device in a plasma system
US9779196B2 (en) 2013-01-31 2017-10-03 Lam Research Corporation Segmenting a model within a plasma system
US9783884B2 (en) * 2013-03-14 2017-10-10 Varian Semiconductor Equipment Associates, Inc. Method for implementing low dose implant in a plasma system
US9502221B2 (en) 2013-07-26 2016-11-22 Lam Research Corporation Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching
US9070538B2 (en) * 2013-10-25 2015-06-30 Varian Semiconductor Equipment Associates, Inc. Pinched plasma bridge flood gun for substrate charge neutralization
US9594105B2 (en) 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
US10950421B2 (en) 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
US9336998B2 (en) 2014-05-09 2016-05-10 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for dynamic control of ion beam energy and angle
JP6608585B2 (ja) * 2014-08-19 2019-11-20 株式会社アヤボ 粒子計測方法および装置
TWI574296B (zh) * 2014-12-04 2017-03-11 萬機科技股份有限公司 功率輸出產生系統與適用於週期性波形之方法
US10049857B2 (en) 2014-12-04 2018-08-14 Mks Instruments, Inc. Adaptive periodic waveform controller
US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
US10553411B2 (en) 2015-09-10 2020-02-04 Taiwan Semiconductor Manufacturing Co., Ltd. Ion collector for use in plasma systems
US11570188B2 (en) 2015-12-28 2023-01-31 Sixgill Ltd. Dark web monitoring, analysis and alert system and method
US11476084B2 (en) 2019-09-10 2022-10-18 Applied Materials, Inc. Apparatus and techniques for ion energy measurement in pulsed ion beams
US12387921B2 (en) * 2020-06-15 2025-08-12 Hitachi High-Tech Corporation Apparatus diagnostic apparatus, apparatus diagnostic method, plasma processing apparatus and semiconductor device manufacturing system

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JPH08288274A (ja) * 1995-04-13 1996-11-01 Sony Corp Ｅｃｒプラズマによる乾式薄膜加工装置
JP2000195462A (ja) * 1998-12-22 2000-07-14 Eaton Corp イオン注入装置及びイオンを注入する方法
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Publication number Priority date Publication date Assignee Title
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JP2015176814A (ja) * 2014-03-17 2015-10-05 株式会社東芝 イオンビームの純度監視装置、方法及びプログラム

Also Published As

Publication number Publication date
CN101978476A (zh) 2011-02-16
TW200943366A (en) 2009-10-16
US20090200461A1 (en) 2009-08-13
WO2009102871A2 (en) 2009-08-20
CN101978476B (zh) 2012-06-13
WO2009102871A3 (en) 2009-10-15
US7586100B2 (en) 2009-09-08
KR20100137445A (ko) 2010-12-30

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