KR20100137445A - 비행시간 이온 검출기를 이용한 플라즈마 도핑 공정들에서의 폐루프 제어 및 공정 최적화 - Google Patents

비행시간 이온 검출기를 이용한 플라즈마 도핑 공정들에서의 폐루프 제어 및 공정 최적화 Download PDF

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Publication number
KR20100137445A
KR20100137445A KR1020107019861A KR20107019861A KR20100137445A KR 20100137445 A KR20100137445 A KR 20100137445A KR 1020107019861 A KR1020107019861 A KR 1020107019861A KR 20107019861 A KR20107019861 A KR 20107019861A KR 20100137445 A KR20100137445 A KR 20100137445A
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KR
South Korea
Prior art keywords
ions
plasma
spectrum
plasma doping
modifying
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KR1020107019861A
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English (en)
Korean (ko)
Inventor
데븐 엠. 라지
루도비 고데
버날드 지. 린제이
티모시 제이. 밀러
조지 디. 파파솔리오티스
Original Assignee
베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
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Publication of KR20100137445A publication Critical patent/KR20100137445A/ko
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
KR1020107019861A 2008-02-12 2009-02-12 비행시간 이온 검출기를 이용한 플라즈마 도핑 공정들에서의 폐루프 제어 및 공정 최적화 Withdrawn KR20100137445A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/029,710 US7586100B2 (en) 2008-02-12 2008-02-12 Closed loop control and process optimization in plasma doping processes using a time of flight ion detector
US12/029,710 2008-02-12

Publications (1)

Publication Number Publication Date
KR20100137445A true KR20100137445A (ko) 2010-12-30

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Application Number Title Priority Date Filing Date
KR1020107019861A Withdrawn KR20100137445A (ko) 2008-02-12 2009-02-12 비행시간 이온 검출기를 이용한 플라즈마 도핑 공정들에서의 폐루프 제어 및 공정 최적화

Country Status (6)

Country Link
US (1) US7586100B2 (enExample)
JP (1) JP2011512655A (enExample)
KR (1) KR20100137445A (enExample)
CN (1) CN101978476B (enExample)
TW (1) TW200943366A (enExample)
WO (1) WO2009102871A2 (enExample)

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US8907307B2 (en) * 2011-03-11 2014-12-09 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for maskless patterned implantation
US8728587B2 (en) * 2011-06-24 2014-05-20 Varian Semiconductor Equipment Associates, Inc. Closed loop process control of plasma processed materials
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US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US9842725B2 (en) 2013-01-31 2017-12-12 Lam Research Corporation Using modeling to determine ion energy associated with a plasma system
US9171699B2 (en) 2012-02-22 2015-10-27 Lam Research Corporation Impedance-based adjustment of power and frequency
US9368329B2 (en) 2012-02-22 2016-06-14 Lam Research Corporation Methods and apparatus for synchronizing RF pulses in a plasma processing system
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9320126B2 (en) 2012-12-17 2016-04-19 Lam Research Corporation Determining a value of a variable on an RF transmission model
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Also Published As

Publication number Publication date
CN101978476A (zh) 2011-02-16
TW200943366A (en) 2009-10-16
US20090200461A1 (en) 2009-08-13
WO2009102871A2 (en) 2009-08-20
CN101978476B (zh) 2012-06-13
WO2009102871A3 (en) 2009-10-15
US7586100B2 (en) 2009-09-08
JP2011512655A (ja) 2011-04-21

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PA0105 International application

Patent event date: 20100906

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid