CN101978476B - 利用飞行时间离子侦测器控制离子掺杂的方法及其装置 - Google Patents

利用飞行时间离子侦测器控制离子掺杂的方法及其装置 Download PDF

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Publication number
CN101978476B
CN101978476B CN2009801098023A CN200980109802A CN101978476B CN 101978476 B CN101978476 B CN 101978476B CN 2009801098023 A CN2009801098023 A CN 2009801098023A CN 200980109802 A CN200980109802 A CN 200980109802A CN 101978476 B CN101978476 B CN 101978476B
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China
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plasma
ions
time
plasma doping
spectrum
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Expired - Fee Related
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CN2009801098023A
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English (en)
Chinese (zh)
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CN101978476A (zh
Inventor
戴文·M·洛吉
卢多维克·葛特
伯纳德·G·琳赛
提摩太·J·米勒
乔治·D·帕帕守尔艾迪斯
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
CN2009801098023A 2008-02-12 2009-02-12 利用飞行时间离子侦测器控制离子掺杂的方法及其装置 Expired - Fee Related CN101978476B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/029,710 2008-02-12
US12/029,710 US7586100B2 (en) 2008-02-12 2008-02-12 Closed loop control and process optimization in plasma doping processes using a time of flight ion detector
PCT/US2009/033928 WO2009102871A2 (en) 2008-02-12 2009-02-12 Closed loop control and process optimization in plasma doping processes using a time of flight ion detector

Publications (2)

Publication Number Publication Date
CN101978476A CN101978476A (zh) 2011-02-16
CN101978476B true CN101978476B (zh) 2012-06-13

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Family Applications (1)

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CN2009801098023A Expired - Fee Related CN101978476B (zh) 2008-02-12 2009-02-12 利用飞行时间离子侦测器控制离子掺杂的方法及其装置

Country Status (6)

Country Link
US (1) US7586100B2 (enExample)
JP (1) JP2011512655A (enExample)
KR (1) KR20100137445A (enExample)
CN (1) CN101978476B (enExample)
TW (1) TW200943366A (enExample)
WO (1) WO2009102871A2 (enExample)

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US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
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JP6608585B2 (ja) * 2014-08-19 2019-11-20 株式会社アヤボ 粒子計測方法および装置
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Also Published As

Publication number Publication date
US20090200461A1 (en) 2009-08-13
CN101978476A (zh) 2011-02-16
JP2011512655A (ja) 2011-04-21
WO2009102871A2 (en) 2009-08-20
WO2009102871A3 (en) 2009-10-15
KR20100137445A (ko) 2010-12-30
TW200943366A (en) 2009-10-16
US7586100B2 (en) 2009-09-08

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