TW200943366A - Method of controlling plasma doping process using a time of flight ion detector and plasma doping apparatus - Google Patents

Method of controlling plasma doping process using a time of flight ion detector and plasma doping apparatus

Info

Publication number
TW200943366A
TW200943366A TW098104477A TW98104477A TW200943366A TW 200943366 A TW200943366 A TW 200943366A TW 098104477 A TW098104477 A TW 098104477A TW 98104477 A TW98104477 A TW 98104477A TW 200943366 A TW200943366 A TW 200943366A
Authority
TW
Taiwan
Prior art keywords
plasma doping
ions
plasma
time
measured
Prior art date
Application number
TW098104477A
Other languages
English (en)
Chinese (zh)
Inventor
Deven M Raj
Ludovic Godet
Bernard G Lindsay
Timothy J Miller
George D Papasouliotis
Original Assignee
Varian Semiconductor Equipment
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment filed Critical Varian Semiconductor Equipment
Publication of TW200943366A publication Critical patent/TW200943366A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
TW098104477A 2008-02-12 2009-02-12 Method of controlling plasma doping process using a time of flight ion detector and plasma doping apparatus TW200943366A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/029,710 US7586100B2 (en) 2008-02-12 2008-02-12 Closed loop control and process optimization in plasma doping processes using a time of flight ion detector

Publications (1)

Publication Number Publication Date
TW200943366A true TW200943366A (en) 2009-10-16

Family

ID=40938101

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098104477A TW200943366A (en) 2008-02-12 2009-02-12 Method of controlling plasma doping process using a time of flight ion detector and plasma doping apparatus

Country Status (6)

Country Link
US (1) US7586100B2 (enExample)
JP (1) JP2011512655A (enExample)
KR (1) KR20100137445A (enExample)
CN (1) CN101978476B (enExample)
TW (1) TW200943366A (enExample)
WO (1) WO2009102871A2 (enExample)

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TWI424796B (zh) * 2010-02-12 2014-01-21 Advanced Micro Fab Equip Inc Plasma processing device with diffusion dissociation region
US11476084B2 (en) 2019-09-10 2022-10-18 Applied Materials, Inc. Apparatus and techniques for ion energy measurement in pulsed ion beams

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US20090104719A1 (en) * 2007-10-23 2009-04-23 Varian Semiconductor Equipment Associates, Inc. Plasma Doping System with In-Situ Chamber Condition Monitoring
KR101064567B1 (ko) * 2008-10-16 2011-09-14 김용환 빔폭 제어 가능한 전자빔 제공 장치
US8501631B2 (en) 2009-11-19 2013-08-06 Lam Research Corporation Plasma processing system control based on RF voltage
US8907307B2 (en) * 2011-03-11 2014-12-09 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for maskless patterned implantation
US8728587B2 (en) * 2011-06-24 2014-05-20 Varian Semiconductor Equipment Associates, Inc. Closed loop process control of plasma processed materials
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US10128090B2 (en) 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
US9390893B2 (en) 2012-02-22 2016-07-12 Lam Research Corporation Sub-pulsing during a state
US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US9842725B2 (en) 2013-01-31 2017-12-12 Lam Research Corporation Using modeling to determine ion energy associated with a plasma system
US9171699B2 (en) 2012-02-22 2015-10-27 Lam Research Corporation Impedance-based adjustment of power and frequency
US9368329B2 (en) 2012-02-22 2016-06-14 Lam Research Corporation Methods and apparatus for synchronizing RF pulses in a plasma processing system
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9320126B2 (en) 2012-12-17 2016-04-19 Lam Research Corporation Determining a value of a variable on an RF transmission model
US9295148B2 (en) * 2012-12-14 2016-03-22 Lam Research Corporation Computation of statistics for statistical data decimation
US9197196B2 (en) 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US8916056B2 (en) * 2012-10-11 2014-12-23 Varian Semiconductor Equipment Associates, Inc. Biasing system for a plasma processing apparatus
US9620337B2 (en) 2013-01-31 2017-04-11 Lam Research Corporation Determining a malfunctioning device in a plasma system
US9779196B2 (en) 2013-01-31 2017-10-03 Lam Research Corporation Segmenting a model within a plasma system
US9783884B2 (en) * 2013-03-14 2017-10-10 Varian Semiconductor Equipment Associates, Inc. Method for implementing low dose implant in a plasma system
US9502221B2 (en) 2013-07-26 2016-11-22 Lam Research Corporation Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching
US9070538B2 (en) * 2013-10-25 2015-06-30 Varian Semiconductor Equipment Associates, Inc. Pinched plasma bridge flood gun for substrate charge neutralization
EP3090608B1 (en) * 2014-01-02 2021-09-01 DH Technologies Development PTE. Ltd. Homogenization of the pulsed electric field created in a ring stack ion accelerator
US9594105B2 (en) 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
JP6211962B2 (ja) * 2014-03-17 2017-10-11 株式会社東芝 イオンビームの純度監視装置、方法及びプログラム
US10950421B2 (en) 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
US9336998B2 (en) 2014-05-09 2016-05-10 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for dynamic control of ion beam energy and angle
JP6608585B2 (ja) * 2014-08-19 2019-11-20 株式会社アヤボ 粒子計測方法および装置
TWI574296B (zh) * 2014-12-04 2017-03-11 萬機科技股份有限公司 功率輸出產生系統與適用於週期性波形之方法
US10049857B2 (en) 2014-12-04 2018-08-14 Mks Instruments, Inc. Adaptive periodic waveform controller
US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
US10553411B2 (en) 2015-09-10 2020-02-04 Taiwan Semiconductor Manufacturing Co., Ltd. Ion collector for use in plasma systems
US11570188B2 (en) 2015-12-28 2023-01-31 Sixgill Ltd. Dark web monitoring, analysis and alert system and method
US12387921B2 (en) * 2020-06-15 2025-08-12 Hitachi High-Tech Corporation Apparatus diagnostic apparatus, apparatus diagnostic method, plasma processing apparatus and semiconductor device manufacturing system

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JPH08288274A (ja) * 1995-04-13 1996-11-01 Sony Corp Ｅｃｒプラズマによる乾式薄膜加工装置
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US20090046464A1 (en) * 2007-08-15 2009-02-19 Fu Zhun Precision Industry (Shen Zhen) Co., Ltd. Led lamp with a heat sink
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US20090104761A1 (en) * 2007-10-19 2009-04-23 Varian Semiconductor Equipment Associates, Inc. Plasma Doping System With Charge Control

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI424796B (zh) * 2010-02-12 2014-01-21 Advanced Micro Fab Equip Inc Plasma processing device with diffusion dissociation region
US11476084B2 (en) 2019-09-10 2022-10-18 Applied Materials, Inc. Apparatus and techniques for ion energy measurement in pulsed ion beams
TWI785359B (zh) * 2019-09-10 2022-12-01 美商應用材料股份有限公司 離子注入系統、束能量測量裝置及用於束能量測量的方法

Also Published As

Publication number Publication date
CN101978476A (zh) 2011-02-16
US20090200461A1 (en) 2009-08-13
WO2009102871A2 (en) 2009-08-20
CN101978476B (zh) 2012-06-13
WO2009102871A3 (en) 2009-10-15
US7586100B2 (en) 2009-09-08
JP2011512655A (ja) 2011-04-21
KR20100137445A (ko) 2010-12-30

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