JP2011511476A5 - - Google Patents
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- Publication number
- JP2011511476A5 JP2011511476A5 JP2010545914A JP2010545914A JP2011511476A5 JP 2011511476 A5 JP2011511476 A5 JP 2011511476A5 JP 2010545914 A JP2010545914 A JP 2010545914A JP 2010545914 A JP2010545914 A JP 2010545914A JP 2011511476 A5 JP2011511476 A5 JP 2011511476A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- organic adhesion
- adhesion promoting
- silicon
- depositing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims 30
- 238000000034 method Methods 0.000 claims 12
- 239000000463 material Substances 0.000 claims 11
- 230000001737 promoting effect Effects 0.000 claims 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 9
- 229910052710 silicon Inorganic materials 0.000 claims 9
- 239000010703 silicon Substances 0.000 claims 9
- 238000000151 deposition Methods 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 7
- 239000006117 anti-reflective coating Substances 0.000 claims 6
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims 6
- 229910003481 amorphous carbon Inorganic materials 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims 4
- 239000011247 coating layer Substances 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 239000002194 amorphous carbon material Substances 0.000 claims 2
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 239000004215 Carbon black (E152) Substances 0.000 claims 1
- XLVKXZZJSTWDJY-UHFFFAOYSA-N [SiH4].[Si] Chemical compound [SiH4].[Si] XLVKXZZJSTWDJY-UHFFFAOYSA-N 0.000 claims 1
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 229930195733 hydrocarbon Natural products 0.000 claims 1
- 150000002430 hydrocarbons Chemical class 0.000 claims 1
- 238000011065 in-situ storage Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 claims 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 1
- 239000002243 precursor Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/025,615 US20090197086A1 (en) | 2008-02-04 | 2008-02-04 | Elimination of photoresist material collapse and poisoning in 45-nm feature size using dry or immersion lithography |
| PCT/US2009/030709 WO2009099713A2 (en) | 2008-02-04 | 2009-01-12 | Elimination of photoresist material collapse and poisoning in 45-nm feature size using dry or immersion lithography |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011511476A JP2011511476A (ja) | 2011-04-07 |
| JP2011511476A5 true JP2011511476A5 (enExample) | 2012-03-01 |
Family
ID=40931981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010545914A Pending JP2011511476A (ja) | 2008-02-04 | 2009-01-12 | 乾式または液浸リソグラフィを用いる４５ｎｍフィーチャサイズでの、フォトレジスト材料の崩壊およびポイゾニングの解消 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20090197086A1 (enExample) |
| JP (1) | JP2011511476A (enExample) |
| KR (1) | KR20100124265A (enExample) |
| CN (1) | CN101939818A (enExample) |
| TW (1) | TW200939346A (enExample) |
| WO (1) | WO2009099713A2 (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090104541A1 (en) * | 2007-10-23 | 2009-04-23 | Eui Kyoon Kim | Plasma surface treatment to prevent pattern collapse in immersion lithography |
| WO2010091466A1 (en) * | 2009-02-11 | 2010-08-19 | Newsouth Innovations Pty Limited | Photovoltaic device structure and method |
| EP2315234A1 (en) * | 2009-10-20 | 2011-04-27 | Applied Materials, Inc. | Method and installation for producing an anti-reflection and/or passivation coating for semiconductor devices |
| CN102543715A (zh) * | 2012-02-28 | 2012-07-04 | 上海华力微电子有限公司 | 无氮介电抗反射薄膜的制作方法 |
| CN103794485A (zh) * | 2012-11-02 | 2014-05-14 | 中芯国际集成电路制造(上海)有限公司 | 多晶硅结构的形成方法 |
| JP2014202969A (ja) * | 2013-04-05 | 2014-10-27 | 富士フイルム株式会社 | パターン形成方法、電子デバイス及びその製造方法 |
| US9224783B2 (en) * | 2013-12-23 | 2015-12-29 | Intermolecular, Inc. | Plasma densification of dielectrics for improved dielectric loss tangent |
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| DE102017122708A1 (de) * | 2017-09-29 | 2019-04-04 | Psc Technologies Gmbh | Verfahren zur Herstellung einer Siliciumcarbid aufweisenden stickstofffreien Schicht |
| US11243465B2 (en) | 2017-12-18 | 2022-02-08 | Tokyo Electron Limited | Plasma treatment method to enhance surface adhesion for lithography |
| WO2019241402A1 (en) * | 2018-06-13 | 2019-12-19 | Brewer Science, Inc. | Adhesion layers for euv lithography |
| CN113039486B (zh) | 2018-11-14 | 2024-11-12 | 朗姆研究公司 | 可用于下一代光刻法中的硬掩模制作方法 |
| CN113227909B (zh) | 2018-12-20 | 2025-07-04 | 朗姆研究公司 | 抗蚀剂的干式显影 |
| TW202514246A (zh) | 2019-03-18 | 2025-04-01 | 美商蘭姆研究公司 | 基板處理方法與設備 |
| US12062538B2 (en) | 2019-04-30 | 2024-08-13 | Lam Research Corporation | Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement |
| TWI869221B (zh) | 2019-06-26 | 2025-01-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| KR20250007037A (ko) | 2020-01-15 | 2025-01-13 | 램 리써치 코포레이션 | 포토레지스트 부착 및 선량 감소를 위한 하부층 |
| WO2021173557A1 (en) | 2020-02-28 | 2021-09-02 | Lam Research Corporation | Multi-layer hardmask for defect reduction in euv patterning |
| TWI876020B (zh) | 2020-04-03 | 2025-03-11 | 美商蘭姆研究公司 | 處理光阻的方法、以及用於沉積薄膜的設備 |
| WO2021262371A1 (en) * | 2020-06-22 | 2021-12-30 | Lam Research Corporation | Surface modification for metal-containing photoresist deposition |
| CN116626993A (zh) | 2020-07-07 | 2023-08-22 | 朗姆研究公司 | 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺 |
| JP7562696B2 (ja) | 2020-11-13 | 2024-10-07 | ラム リサーチ コーポレーション | フォトレジストのドライ除去用プロセスツール |
| US12474640B2 (en) | 2023-03-17 | 2025-11-18 | Lam Research Corporation | Integration of dry development and etch processes for EUV patterning in a single process chamber |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2694097B2 (ja) * | 1992-03-03 | 1997-12-24 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 反射防止コーティング組成物 |
| JP3128335B2 (ja) * | 1992-07-17 | 2001-01-29 | 株式会社東芝 | パターン形成方法 |
| JP3392231B2 (ja) * | 1994-09-09 | 2003-03-31 | 沖電気工業株式会社 | パターン形成方法 |
| JP3422580B2 (ja) * | 1994-12-16 | 2003-06-30 | 三菱電機株式会社 | 半導体装置の製造方法 |
| US6030541A (en) * | 1998-06-19 | 2000-02-29 | International Business Machines Corporation | Process for defining a pattern using an anti-reflective coating and structure therefor |
| US6440878B1 (en) * | 2000-04-03 | 2002-08-27 | Sharp Laboratories Of America, Inc. | Method to enhance the adhesion of silicon nitride to low-k fluorinated amorphous carbon using a silicon carbide adhesion promoter layer |
| JP2002194547A (ja) * | 2000-06-08 | 2002-07-10 | Applied Materials Inc | アモルファスカーボン層の堆積方法 |
| US6580170B2 (en) * | 2000-06-22 | 2003-06-17 | Texas Instruments Incorporated | Semiconductor device protective overcoat with enhanced adhesion to polymeric materials |
| US6368924B1 (en) * | 2000-10-31 | 2002-04-09 | Motorola, Inc. | Amorphous carbon layer for improved adhesion of photoresist and method of fabrication |
| JP3871029B2 (ja) * | 2001-10-18 | 2007-01-24 | 信越化学工業株式会社 | 化学増幅型レジストパターン用表面処理剤及びパターン形成方法 |
| US7226853B2 (en) * | 2001-12-26 | 2007-06-05 | Applied Materials, Inc. | Method of forming a dual damascene structure utilizing a three layer hard mask structure |
| US6803313B2 (en) * | 2002-09-27 | 2004-10-12 | Advanced Micro Devices, Inc. | Method for forming a hardmask employing multiple independently formed layers of a pecvd material to reduce pinholes |
| TW200503066A (en) * | 2003-07-07 | 2005-01-16 | Macronix Int Co Ltd | Process for reworking semiconductor patterned photoresist layer |
| US6972255B2 (en) * | 2003-07-28 | 2005-12-06 | Freescale Semiconductor, Inc. | Semiconductor device having an organic anti-reflective coating (ARC) and method therefor |
| US6872014B1 (en) * | 2003-11-21 | 2005-03-29 | Asml Netherlands B.V. | Method for developing a photoresist pattern |
| US20050118541A1 (en) * | 2003-11-28 | 2005-06-02 | Applied Materials, Inc. | Maintenance of photoresist adhesion and activity on the surface of dielectric ARCS for 90 nm feature sizes |
| US7285853B2 (en) * | 2005-02-17 | 2007-10-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multilayer anti-reflective coating for semiconductor lithography and the method for forming the same |
| US7253118B2 (en) * | 2005-03-15 | 2007-08-07 | Micron Technology, Inc. | Pitch reduced patterns relative to photolithography features |
| DE102006046364A1 (de) * | 2006-09-29 | 2008-04-03 | Advanced Micro Devices, Inc., Sunnyvale | ARC-Schicht mit geringerer Neigung zum Ablösen und Verfahren zur Herstellung derselben |
| US20090104541A1 (en) * | 2007-10-23 | 2009-04-23 | Eui Kyoon Kim | Plasma surface treatment to prevent pattern collapse in immersion lithography |
-
2008
- 2008-02-04 US US12/025,615 patent/US20090197086A1/en not_active Abandoned
-
2009
- 2009-01-12 CN CN200980104622.6A patent/CN101939818A/zh active Pending
- 2009-01-12 WO PCT/US2009/030709 patent/WO2009099713A2/en not_active Ceased
- 2009-01-12 KR KR1020107019452A patent/KR20100124265A/ko not_active Ceased
- 2009-01-12 JP JP2010545914A patent/JP2011511476A/ja active Pending
- 2009-02-04 TW TW098103572A patent/TW200939346A/zh unknown
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