KR20100124265A - 건식 또는 침지식 리소그래피를 이용한 포토레지스트 재료의 붕괴 및 45 ｎｍ 회로선폭에서 포이즈닝의 제거 - Google Patents

건식 또는 침지식 리소그래피를 이용한 포토레지스트 재료의 붕괴 및 45 ｎｍ 회로선폭에서 포이즈닝의 제거 Download PDF

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Publication number
KR20100124265A
KR20100124265A KR1020107019452A KR20107019452A KR20100124265A KR 20100124265 A KR20100124265 A KR 20100124265A KR 1020107019452 A KR1020107019452 A KR 1020107019452A KR 20107019452 A KR20107019452 A KR 20107019452A KR 20100124265 A KR20100124265 A KR 20100124265A
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South Korea
Prior art keywords
layer
adhesion improving
organic adhesion
deposited
improving layer
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KR1020107019452A
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English (en)
Korean (ko)
Inventor
수드하 라티
김의균
김복헌
마틴 제이 세아몬스
프란시마 씨. 슈미트
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20100124265A publication Critical patent/KR20100124265A/ko
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020107019452A 2008-02-04 2009-01-12 건식 또는 침지식 리소그래피를 이용한 포토레지스트 재료의 붕괴 및 45 ｎｍ 회로선폭에서 포이즈닝의 제거 Ceased KR20100124265A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/025,615 2008-02-04
US12/025,615 US20090197086A1 (en) 2008-02-04 2008-02-04 Elimination of photoresist material collapse and poisoning in 45-nm feature size using dry or immersion lithography

Publications (1)

Publication Number Publication Date
KR20100124265A true KR20100124265A (ko) 2010-11-26

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KR1020107019452A Ceased KR20100124265A (ko) 2008-02-04 2009-01-12 건식 또는 침지식 리소그래피를 이용한 포토레지스트 재료의 붕괴 및 45 ｎｍ 회로선폭에서 포이즈닝의 제거

Country Status (6)

Country Link
US (1) US20090197086A1 (enExample)
JP (1) JP2011511476A (enExample)
KR (1) KR20100124265A (enExample)
CN (1) CN101939818A (enExample)
TW (1) TW200939346A (enExample)
WO (1) WO2009099713A2 (enExample)

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US20090104541A1 (en) * 2007-10-23 2009-04-23 Eui Kyoon Kim Plasma surface treatment to prevent pattern collapse in immersion lithography
WO2010091466A1 (en) * 2009-02-11 2010-08-19 Newsouth Innovations Pty Limited Photovoltaic device structure and method
EP2315234A1 (en) * 2009-10-20 2011-04-27 Applied Materials, Inc. Method and installation for producing an anti-reflection and/or passivation coating for semiconductor devices
CN102543715A (zh) * 2012-02-28 2012-07-04 上海华力微电子有限公司 无氮介电抗反射薄膜的制作方法
CN103794485A (zh) * 2012-11-02 2014-05-14 中芯国际集成电路制造(上海)有限公司 多晶硅结构的形成方法
JP2014202969A (ja) * 2013-04-05 2014-10-27 富士フイルム株式会社 パターン形成方法、電子デバイス及びその製造方法
US9224783B2 (en) * 2013-12-23 2015-12-29 Intermolecular, Inc. Plasma densification of dielectrics for improved dielectric loss tangent
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
DE102017122708A1 (de) * 2017-09-29 2019-04-04 Psc Technologies Gmbh Verfahren zur Herstellung einer Siliciumcarbid aufweisenden stickstofffreien Schicht
US11243465B2 (en) 2017-12-18 2022-02-08 Tokyo Electron Limited Plasma treatment method to enhance surface adhesion for lithography
WO2019241402A1 (en) * 2018-06-13 2019-12-19 Brewer Science, Inc. Adhesion layers for euv lithography
CN113039486B (zh) 2018-11-14 2024-11-12 朗姆研究公司 可用于下一代光刻法中的硬掩模制作方法
CN113227909B (zh) 2018-12-20 2025-07-04 朗姆研究公司 抗蚀剂的干式显影
TW202514246A (zh) 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
US12062538B2 (en) 2019-04-30 2024-08-13 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
KR20250007037A (ko) 2020-01-15 2025-01-13 램 리써치 코포레이션 포토레지스트 부착 및 선량 감소를 위한 하부층
WO2021173557A1 (en) 2020-02-28 2021-09-02 Lam Research Corporation Multi-layer hardmask for defect reduction in euv patterning
TWI876020B (zh) 2020-04-03 2025-03-11 美商蘭姆研究公司 處理光阻的方法、以及用於沉積薄膜的設備
WO2021262371A1 (en) * 2020-06-22 2021-12-30 Lam Research Corporation Surface modification for metal-containing photoresist deposition
CN116626993A (zh) 2020-07-07 2023-08-22 朗姆研究公司 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺
JP7562696B2 (ja) 2020-11-13 2024-10-07 ラム リサーチ コーポレーション フォトレジストのドライ除去用プロセスツール
US12474640B2 (en) 2023-03-17 2025-11-18 Lam Research Corporation Integration of dry development and etch processes for EUV patterning in a single process chamber

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JP3128335B2 (ja) * 1992-07-17 2001-01-29 株式会社東芝 パターン形成方法
JP3392231B2 (ja) * 1994-09-09 2003-03-31 沖電気工業株式会社 パターン形成方法
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US20090104541A1 (en) * 2007-10-23 2009-04-23 Eui Kyoon Kim Plasma surface treatment to prevent pattern collapse in immersion lithography

Also Published As

Publication number Publication date
WO2009099713A2 (en) 2009-08-13
CN101939818A (zh) 2011-01-05
US20090197086A1 (en) 2009-08-06
TW200939346A (en) 2009-09-16
WO2009099713A3 (en) 2009-10-08
JP2011511476A (ja) 2011-04-07

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