JP2011511476A - 乾式または液浸リソグラフィを用いる４５ｎｍフィーチャサイズでの、フォトレジスト材料の崩壊およびポイゾニングの解消 - Google Patents

乾式または液浸リソグラフィを用いる４５ｎｍフィーチャサイズでの、フォトレジスト材料の崩壊およびポイゾニングの解消 Download PDF

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JP2011511476A
JP2011511476A JP2010545914A JP2010545914A JP2011511476A JP 2011511476 A JP2011511476 A JP 2011511476A JP 2010545914 A JP2010545914 A JP 2010545914A JP 2010545914 A JP2010545914 A JP 2010545914A JP 2011511476 A JP2011511476 A JP 2011511476A
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Japan
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layer
adhesion promoting
organic adhesion
deposited
promoting layer
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JP2010545914A
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Japanese (ja)
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JP2011511476A5 (enExample
Inventor
スダ ラティ，
ウィ キュン キム，
ボク ホエン キム，
マーチン ジェイ シーモンズ，
フランシマー シー． シュミット，
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2011511476A publication Critical patent/JP2011511476A/ja
Publication of JP2011511476A5 publication Critical patent/JP2011511476A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2010545914A 2008-02-04 2009-01-12 乾式または液浸リソグラフィを用いる４５ｎｍフィーチャサイズでの、フォトレジスト材料の崩壊およびポイゾニングの解消 Pending JP2011511476A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/025,615 US20090197086A1 (en) 2008-02-04 2008-02-04 Elimination of photoresist material collapse and poisoning in 45-nm feature size using dry or immersion lithography
PCT/US2009/030709 WO2009099713A2 (en) 2008-02-04 2009-01-12 Elimination of photoresist material collapse and poisoning in 45-nm feature size using dry or immersion lithography

Publications (2)

Publication Number Publication Date
JP2011511476A true JP2011511476A (ja) 2011-04-07
JP2011511476A5 JP2011511476A5 (enExample) 2012-03-01

Family

ID=40931981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010545914A Pending JP2011511476A (ja) 2008-02-04 2009-01-12 乾式または液浸リソグラフィを用いる４５ｎｍフィーチャサイズでの、フォトレジスト材料の崩壊およびポイゾニングの解消

Country Status (6)

Country Link
US (1) US20090197086A1 (enExample)
JP (1) JP2011511476A (enExample)
KR (1) KR20100124265A (enExample)
CN (1) CN101939818A (enExample)
TW (1) TW200939346A (enExample)
WO (1) WO2009099713A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014162983A1 (ja) * 2013-04-05 2014-10-09 富士フイルム株式会社 パターン形成方法、電子デバイス及びその製造方法
JP2023530299A (ja) * 2020-06-22 2023-07-14 ラム リサーチ コーポレーション 金属含有フォトレジスト堆積のための表面改質
US12436464B2 (en) 2020-04-03 2025-10-07 Lam Research Corporation Pre-exposure photoresist curing to enhance EUV lithographic performance

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090104541A1 (en) * 2007-10-23 2009-04-23 Eui Kyoon Kim Plasma surface treatment to prevent pattern collapse in immersion lithography
WO2010091466A1 (en) * 2009-02-11 2010-08-19 Newsouth Innovations Pty Limited Photovoltaic device structure and method
EP2315234A1 (en) * 2009-10-20 2011-04-27 Applied Materials, Inc. Method and installation for producing an anti-reflection and/or passivation coating for semiconductor devices
CN102543715A (zh) * 2012-02-28 2012-07-04 上海华力微电子有限公司 无氮介电抗反射薄膜的制作方法
CN103794485A (zh) * 2012-11-02 2014-05-14 中芯国际集成电路制造(上海)有限公司 多晶硅结构的形成方法
US9224783B2 (en) * 2013-12-23 2015-12-29 Intermolecular, Inc. Plasma densification of dielectrics for improved dielectric loss tangent
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
DE102017122708A1 (de) * 2017-09-29 2019-04-04 Psc Technologies Gmbh Verfahren zur Herstellung einer Siliciumcarbid aufweisenden stickstofffreien Schicht
US11243465B2 (en) 2017-12-18 2022-02-08 Tokyo Electron Limited Plasma treatment method to enhance surface adhesion for lithography
WO2019241402A1 (en) * 2018-06-13 2019-12-19 Brewer Science, Inc. Adhesion layers for euv lithography
CN113039486B (zh) 2018-11-14 2024-11-12 朗姆研究公司 可用于下一代光刻法中的硬掩模制作方法
CN113227909B (zh) 2018-12-20 2025-07-04 朗姆研究公司 抗蚀剂的干式显影
TW202514246A (zh) 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
US12062538B2 (en) 2019-04-30 2024-08-13 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
KR20250007037A (ko) 2020-01-15 2025-01-13 램 리써치 코포레이션 포토레지스트 부착 및 선량 감소를 위한 하부층
WO2021173557A1 (en) 2020-02-28 2021-09-02 Lam Research Corporation Multi-layer hardmask for defect reduction in euv patterning
CN116626993A (zh) 2020-07-07 2023-08-22 朗姆研究公司 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺
JP7562696B2 (ja) 2020-11-13 2024-10-07 ラム リサーチ コーポレーション フォトレジストのドライ除去用プロセスツール
US12474640B2 (en) 2023-03-17 2025-11-18 Lam Research Corporation Integration of dry development and etch processes for EUV patterning in a single process chamber

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0635206A (ja) * 1992-07-17 1994-02-10 Toshiba Corp パターン形成方法
JPH0876352A (ja) * 1994-09-09 1996-03-22 Oki Electric Ind Co Ltd パターン形成方法
JPH08172039A (ja) * 1994-12-16 1996-07-02 Mitsubishi Electric Corp 半導体装置の製造方法
JP2003122018A (ja) * 2001-10-18 2003-04-25 Shin Etsu Chem Co Ltd 化学増幅型レジストパターン用表面処理剤及びパターン形成方法
JP2004513515A (ja) * 2000-10-31 2004-04-30 モトローラ・インコーポレイテッド ホトレジストの改良形接着用アモルファス炭素層
US20050048771A1 (en) * 2002-09-27 2005-03-03 Advanced Micro Devices, Inc. Hardmask employing multiple layers of silicon oxynitride

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2694097B2 (ja) * 1992-03-03 1997-12-24 インターナショナル・ビジネス・マシーンズ・コーポレイション 反射防止コーティング組成物
US6030541A (en) * 1998-06-19 2000-02-29 International Business Machines Corporation Process for defining a pattern using an anti-reflective coating and structure therefor
US6440878B1 (en) * 2000-04-03 2002-08-27 Sharp Laboratories Of America, Inc. Method to enhance the adhesion of silicon nitride to low-k fluorinated amorphous carbon using a silicon carbide adhesion promoter layer
JP2002194547A (ja) * 2000-06-08 2002-07-10 Applied Materials Inc アモルファスカーボン層の堆積方法
US6580170B2 (en) * 2000-06-22 2003-06-17 Texas Instruments Incorporated Semiconductor device protective overcoat with enhanced adhesion to polymeric materials
US7226853B2 (en) * 2001-12-26 2007-06-05 Applied Materials, Inc. Method of forming a dual damascene structure utilizing a three layer hard mask structure
TW200503066A (en) * 2003-07-07 2005-01-16 Macronix Int Co Ltd Process for reworking semiconductor patterned photoresist layer
US6972255B2 (en) * 2003-07-28 2005-12-06 Freescale Semiconductor, Inc. Semiconductor device having an organic anti-reflective coating (ARC) and method therefor
US6872014B1 (en) * 2003-11-21 2005-03-29 Asml Netherlands B.V. Method for developing a photoresist pattern
US20050118541A1 (en) * 2003-11-28 2005-06-02 Applied Materials, Inc. Maintenance of photoresist adhesion and activity on the surface of dielectric ARCS for 90 nm feature sizes
US7285853B2 (en) * 2005-02-17 2007-10-23 Taiwan Semiconductor Manufacturing Co., Ltd. Multilayer anti-reflective coating for semiconductor lithography and the method for forming the same
US7253118B2 (en) * 2005-03-15 2007-08-07 Micron Technology, Inc. Pitch reduced patterns relative to photolithography features
DE102006046364A1 (de) * 2006-09-29 2008-04-03 Advanced Micro Devices, Inc., Sunnyvale ARC-Schicht mit geringerer Neigung zum Ablösen und Verfahren zur Herstellung derselben
US20090104541A1 (en) * 2007-10-23 2009-04-23 Eui Kyoon Kim Plasma surface treatment to prevent pattern collapse in immersion lithography

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0635206A (ja) * 1992-07-17 1994-02-10 Toshiba Corp パターン形成方法
JPH0876352A (ja) * 1994-09-09 1996-03-22 Oki Electric Ind Co Ltd パターン形成方法
JPH08172039A (ja) * 1994-12-16 1996-07-02 Mitsubishi Electric Corp 半導体装置の製造方法
JP2004513515A (ja) * 2000-10-31 2004-04-30 モトローラ・インコーポレイテッド ホトレジストの改良形接着用アモルファス炭素層
JP2003122018A (ja) * 2001-10-18 2003-04-25 Shin Etsu Chem Co Ltd 化学増幅型レジストパターン用表面処理剤及びパターン形成方法
US20050048771A1 (en) * 2002-09-27 2005-03-03 Advanced Micro Devices, Inc. Hardmask employing multiple layers of silicon oxynitride

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014162983A1 (ja) * 2013-04-05 2014-10-09 富士フイルム株式会社 パターン形成方法、電子デバイス及びその製造方法
US12436464B2 (en) 2020-04-03 2025-10-07 Lam Research Corporation Pre-exposure photoresist curing to enhance EUV lithographic performance
JP2023530299A (ja) * 2020-06-22 2023-07-14 ラム リサーチ コーポレーション 金属含有フォトレジスト堆積のための表面改質

Also Published As

Publication number Publication date
WO2009099713A2 (en) 2009-08-13
CN101939818A (zh) 2011-01-05
US20090197086A1 (en) 2009-08-06
TW200939346A (en) 2009-09-16
WO2009099713A3 (en) 2009-10-08
KR20100124265A (ko) 2010-11-26

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