JP2011510321A5 - - Google Patents

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Publication number
JP2011510321A5
JP2011510321A5 JP2010543626A JP2010543626A JP2011510321A5 JP 2011510321 A5 JP2011510321 A5 JP 2011510321A5 JP 2010543626 A JP2010543626 A JP 2010543626A JP 2010543626 A JP2010543626 A JP 2010543626A JP 2011510321 A5 JP2011510321 A5 JP 2011510321A5
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JP
Japan
Prior art keywords
mode illumination
charged particle
particle beam
spot mode
during
Prior art date
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Application number
JP2010543626A
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English (en)
Japanese (ja)
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JP2011510321A (ja
JP5638396B2 (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/IL2009/000094 external-priority patent/WO2009093247A1/en
Publication of JP2011510321A publication Critical patent/JP2011510321A/ja
Publication of JP2011510321A5 publication Critical patent/JP2011510321A5/ja
Application granted granted Critical
Publication of JP5638396B2 publication Critical patent/JP5638396B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2010543626A 2008-01-22 2009-01-22 微細要素の物質分析のためのシステムおよび方法 Expired - Fee Related JP5638396B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US2255008P 2008-01-22 2008-01-22
US61/022,550 2008-01-22
PCT/IL2009/000094 WO2009093247A1 (en) 2008-01-22 2009-01-22 System and method for material analysis of a microscopic element

Publications (3)

Publication Number Publication Date
JP2011510321A JP2011510321A (ja) 2011-03-31
JP2011510321A5 true JP2011510321A5 (enExample) 2012-03-22
JP5638396B2 JP5638396B2 (ja) 2014-12-10

Family

ID=40636883

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010543626A Expired - Fee Related JP5638396B2 (ja) 2008-01-22 2009-01-22 微細要素の物質分析のためのシステムおよび方法

Country Status (3)

Country Link
US (1) US8546756B2 (enExample)
JP (1) JP5638396B2 (enExample)
WO (1) WO2009093247A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7276801B2 (en) 2003-09-22 2007-10-02 Intel Corporation Designs and methods for conductive bumps
TWI794615B (zh) 2019-07-26 2023-03-01 德商卡爾蔡司Ｓｍｔ有限公司 微加工裝置的自動運作控制

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0646550B2 (ja) * 1985-08-19 1994-06-15 株式会社東芝 電子ビ−ム定位置照射制御方法および電子ビ−ム定位置照射制御装置
JPS63190236A (ja) * 1987-02-02 1988-08-05 Matsushita Electric Ind Co Ltd 電子プロ−ブ解析装置
JP3454052B2 (ja) * 1996-12-05 2003-10-06 株式会社日立製作所 電子線分析装置
JP2000106121A (ja) * 1998-07-29 2000-04-11 Jeol Ltd 電子顕微鏡あるいはその類似装置
JP2000133567A (ja) 1998-10-23 2000-05-12 Advantest Corp 電子ビーム露光方法及び電子ビーム露光装置
JP2001168013A (ja) * 1999-12-10 2001-06-22 Nec Corp 電子線露光方法
JP2002286663A (ja) * 2001-03-26 2002-10-03 Jeol Ltd 試料分析および試料観察装置
JP4065847B2 (ja) * 2001-11-21 2008-03-26 株式会社日立ハイテクノロジーズ 試料像形成方法及び荷電粒子線装置
US6924484B1 (en) * 2002-11-19 2005-08-02 Kla-Tencor Corporation Void characterization in metal interconnect structures using X-ray emission analyses
US7018683B2 (en) * 2004-06-15 2006-03-28 Sii Nanotechnology Inc. Electron beam processing method
JP2006173038A (ja) * 2004-12-20 2006-06-29 Hitachi High-Technologies Corp 荷電粒子線装置、試料像表示方法及びイメージシフト感度計測方法
JP3904021B2 (ja) * 2005-04-05 2007-04-11 株式会社日立製作所 電子線分析方法
JP4520426B2 (ja) * 2005-07-04 2010-08-04 株式会社ニューフレアテクノロジー 電子ビームのビームドリフト補正方法及び電子ビームの描画方法
JP2007115587A (ja) * 2005-10-21 2007-05-10 Sii Nanotechnology Inc 荷電粒子ビーム加工方法及び荷電粒子ビーム装置

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