JP2011508979A5 - - Google Patents

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Publication number
JP2011508979A5
JP2011508979A5 JP2010540946A JP2010540946A JP2011508979A5 JP 2011508979 A5 JP2011508979 A5 JP 2011508979A5 JP 2010540946 A JP2010540946 A JP 2010540946A JP 2010540946 A JP2010540946 A JP 2010540946A JP 2011508979 A5 JP2011508979 A5 JP 2011508979A5
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Japan
Prior art keywords
cnt
conductor
selectively
depositing
manufacturing
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Pending
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JP2010540946A
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English (en)
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JP2011508979A (ja
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Priority claimed from US11/968,156 external-priority patent/US8558220B2/en
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Publication of JP2011508979A publication Critical patent/JP2011508979A/ja
Publication of JP2011508979A5 publication Critical patent/JP2011508979A5/ja
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Claims (14)

  1. メモリセルを製造する方法であって、
    基板上に第１の導体を製造するステップと、
    前記第１の導体上にカーボンナノチューブ（ＣＮＴ）材料を選択的に製造するステップと、
    前記ＣＮＴ材料上にダイオードを製造するステップと、
    前記ダイオード上に第２の導体を製造するステップと、
    を含む方法。
  2. 請求項１記載の方法において、
    前記ＣＮＴ材料を選択的に製造するステップは、
    前記第１の導体上にＣＮＴシーディング層を製造することと、
    前記ＣＮＴシーディング層上にＣＮＴ材料を選択的に製造することと、
    を含む方法。
  3. 請求項２記載の方法において、
    前記ＣＮＴシーディング層を製造するステップは、
    前記第１の導体上に窒化チタンを堆積させることと、
    前記堆積させられた窒化チタンの表面を粗くすることと、
    を含む方法。
  4. 請求項３記載の方法において、
    前記粗くされた窒化チタン表面上に金属層を選択的に堆積させるステップをさらに含む方法。
  5. 請求項２記載の方法において、
    前記ＣＮＴシーディング層を製造するステップは、
    前記第１の導体上に窒化チタンを堆積させることと、
    前記窒化チタン上に金属触媒層を選択的に堆積させることと、
    を含む方法。
  6. 請求項１記載の方法において、
    前記ＣＮＴ材料を選択的に製造するステップは、
    前記第１の導体上に金属層を選択的に堆積させることと、
    前記堆積させられた金属層上にＣＮＴ材料を選択的に製造することと、
    を含む方法。
  7. 請求項１記載の方法において、
    前記ＣＮＴ材料の切替特性を調整するように前記ＣＮＴ材料中に欠陥を生じさせるステップをさらに含む方法。
  8. 請求項１記載の方法において、
    前記ＣＮＴ材料を選択的に製造するステップは、前記ＣＮＴ材料における横方向伝導を減らすように実質的に垂直に整列させられたＣＮＴを含むＣＮＴ材料を製造することを含む方法。
  9. メモリセルを製造する方法であって、
    基板上に第１の導体を製造するステップと、
    前記第１の導体上にカーボンナノチューブ（ＣＮＴ）材料を選択的に製造することによって前記第１の導体上に可逆抵抗切替素子を製造するステップと、
    前記可逆抵抗切替素子上に垂直多結晶ダイオードを製造するステップと、
    前記垂直多結晶ダイオード上に第２の導体を製造するステップと、
    を含む方法。
  10. 請求項９記載の方法において、
    前記可逆抵抗切替素子を製造するステップは、
    ＣＮＴシーディング層を製造することと、
    前記ＣＮＴシーディング層上にＣＮＴ材料を選択的に製造することと、
    を含む方法。
  11. 請求項１０記載の方法において、
    前記ＣＮＴシーディング層を製造することは、
    前記第１の導体上に窒化チタンを堆積させることと、
    前記堆積させられた窒化チタンの表面を粗くすることと、
    を含む方法。
  12. 請求項１１記載の方法において、
    前記粗くされた窒化チタン表面上に金属層を選択的に堆積させるステップをさらに含む方法。
  13. 請求項９記載の方法において、
    前記可逆抵抗切替素子を製造するステップは、
    前記第１の導体上に金属層を選択的に堆積させることと、
    前記堆積させられた金属層上にＣＮＴ材料を選択的に製造することと、
    を含む方法。
  14. 請求項１〜１３のいずれか記載の方法を用いて形成されたメモリセル。
JP2010540946A 2007-12-31 2008-12-30 底部導体の上に形成された選択的に製造されたカーボンナノチューブ可逆抵抗切替素子を使用するメモリセルおよびそれを製造する方法 Pending JP2011508979A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/968,156 US8558220B2 (en) 2007-12-31 2007-12-31 Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
PCT/US2008/088585 WO2009088889A1 (en) 2007-12-31 2008-12-30 Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same

Publications (2)

Publication Number Publication Date
JP2011508979A JP2011508979A (ja) 2011-03-17
JP2011508979A5 true JP2011508979A5 (ja) 2011-12-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010540946A Pending JP2011508979A (ja) 2007-12-31 2008-12-30 底部導体の上に形成された選択的に製造されたカーボンナノチューブ可逆抵抗切替素子を使用するメモリセルおよびそれを製造する方法

Country Status (7)

Country Link
US (1) US8558220B2 (ja)
EP (1) EP2227827A4 (ja)
JP (1) JP2011508979A (ja)
KR (1) KR20100105635A (ja)
CN (1) CN101919056B (ja)
TW (1) TW200943488A (ja)
WO (1) WO2009088889A1 (ja)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8000127B2 (en) * 2009-08-12 2011-08-16 Nantero, Inc. Method for resetting a resistive change memory element
US9287356B2 (en) * 2005-05-09 2016-03-15 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9390790B2 (en) 2005-04-05 2016-07-12 Nantero Inc. Carbon based nonvolatile cross point memory incorporating carbon based diode select devices and MOSFET select devices for memory and logic applications
US7479654B2 (en) 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US7781862B2 (en) * 2005-05-09 2010-08-24 Nantero, Inc. Two-terminal nanotube devices and systems and methods of making same
US8183665B2 (en) * 2005-11-15 2012-05-22 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8513768B2 (en) * 2005-05-09 2013-08-20 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8217490B2 (en) * 2005-05-09 2012-07-10 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7835170B2 (en) * 2005-05-09 2010-11-16 Nantero, Inc. Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
US9911743B2 (en) * 2005-05-09 2018-03-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7575693B2 (en) 2005-05-23 2009-08-18 Nantero, Inc. Method of aligning nanotubes and wires with an etched feature
US8987702B2 (en) 2007-05-01 2015-03-24 Micron Technology, Inc. Selectively conducting devices, diode constructions, constructions, and diode forming methods
US8878235B2 (en) 2007-12-31 2014-11-04 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
US8236623B2 (en) 2007-12-31 2012-08-07 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
US20090166610A1 (en) * 2007-12-31 2009-07-02 April Schricker Memory cell with planarized carbon nanotube layer and methods of forming the same
CN102067292B (zh) * 2008-04-11 2013-08-14 桑迪士克3D有限责任公司 用于蚀刻在非易失性存储器中使用的碳纳米管膜的方法
US8530318B2 (en) * 2008-04-11 2013-09-10 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
TW201001629A (en) 2008-04-11 2010-01-01 Sandisk 3D Llc Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same
US8467224B2 (en) * 2008-04-11 2013-06-18 Sandisk 3D Llc Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom
US8304284B2 (en) * 2008-04-11 2012-11-06 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same
US8133793B2 (en) * 2008-05-16 2012-03-13 Sandisk 3D Llc Carbon nano-film reversible resistance-switchable elements and methods of forming the same
US8120951B2 (en) * 2008-05-22 2012-02-21 Micron Technology, Inc. Memory devices, memory device constructions, constructions, memory device forming methods, current conducting devices, and memory cell programming methods
US8569730B2 (en) * 2008-07-08 2013-10-29 Sandisk 3D Llc Carbon-based interface layer for a memory device and methods of forming the same
JP2011527834A (ja) * 2008-07-08 2011-11-04 サンディスク スリーディー，エルエルシー 炭素系抵抗率スイッチング材料およびその形成方法
US8309407B2 (en) * 2008-07-15 2012-11-13 Sandisk 3D Llc Electronic devices including carbon-based films having sidewall liners, and methods of forming such devices
WO2010009364A1 (en) * 2008-07-18 2010-01-21 Sandisk 3D, Llc Carbon-based resistivity-switching materials and methods of forming the same
US8466044B2 (en) 2008-08-07 2013-06-18 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods forming the same
US7847588B2 (en) * 2008-08-14 2010-12-07 Nantero, Inc. Nonvolatile nanotube programmable logic devices and a nonvolatile nanotube field programmable gate array using same
US9263126B1 (en) 2010-09-01 2016-02-16 Nantero Inc. Method for dynamically accessing and programming resistive change element arrays
WO2010022097A1 (en) * 2008-08-19 2010-02-25 Sandisk 3D, Llc Methods for increasing carbon nano-tube (cnt) yield in memory devices
US8421050B2 (en) * 2008-10-30 2013-04-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same
US20100108976A1 (en) * 2008-10-30 2010-05-06 Sandisk 3D Llc Electronic devices including carbon-based films, and methods of forming such devices
US8835892B2 (en) * 2008-10-30 2014-09-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having boron nitride-based liners, and methods of forming the same
US8840956B2 (en) 2008-10-31 2014-09-23 Potters Industries, Llc Retroreflective coating and method for applying a retroreflective coating on a structure
US7915637B2 (en) * 2008-11-19 2011-03-29 Nantero, Inc. Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same
US8470646B2 (en) 2008-12-31 2013-06-25 Sandisk 3D Llc Modulation of resistivity in carbon-based read-writeable materials
US8183121B2 (en) * 2009-03-31 2012-05-22 Sandisk 3D Llc Carbon-based films, and methods of forming the same, having dielectric filler material and exhibiting reduced thermal resistance
US8509124B2 (en) * 2009-04-03 2013-08-13 Lg Electronics Inc. Method for transceiving a signal in wireless communication system
US20100283053A1 (en) * 2009-05-11 2010-11-11 Sandisk 3D Llc Nonvolatile memory array comprising silicon-based diodes fabricated at low temperature
JP4913190B2 (ja) * 2009-09-24 2012-04-11 株式会社東芝 不揮発性記憶装置
US8481396B2 (en) 2009-10-23 2013-07-09 Sandisk 3D Llc Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same
US8222704B2 (en) * 2009-12-31 2012-07-17 Nantero, Inc. Compact electrical switching devices with nanotube elements, and methods of making same
US8389375B2 (en) * 2010-02-11 2013-03-05 Sandisk 3D Llc Memory cell formed using a recess and methods for forming the same
US8237146B2 (en) 2010-02-24 2012-08-07 Sandisk 3D Llc Memory cell with silicon-containing carbon switching layer and methods for forming the same
US8507966B2 (en) 2010-03-02 2013-08-13 Micron Technology, Inc. Semiconductor cells, arrays, devices and systems having a buried conductive line and methods for forming the same
US9608119B2 (en) 2010-03-02 2017-03-28 Micron Technology, Inc. Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures
US8288795B2 (en) 2010-03-02 2012-10-16 Micron Technology, Inc. Thyristor based memory cells, devices and systems including the same and methods for forming the same
US9646869B2 (en) * 2010-03-02 2017-05-09 Micron Technology, Inc. Semiconductor devices including a diode structure over a conductive strap and methods of forming such semiconductor devices
US8513722B2 (en) 2010-03-02 2013-08-20 Micron Technology, Inc. Floating body cell structures, devices including same, and methods for forming same
US8357582B2 (en) 2010-11-01 2013-01-22 Micron Technology, Inc. Methods of forming electrical components and memory cells
CN102479925A (zh) * 2010-11-30 2012-05-30 中国科学院微电子研究所 具有高变比能力的电阻转变存储器结构及其制备方法
US8598621B2 (en) 2011-02-11 2013-12-03 Micron Technology, Inc. Memory cells, memory arrays, methods of forming memory cells, and methods of forming a shared doped semiconductor region of a vertically oriented thyristor and a vertically oriented access transistor
US8952418B2 (en) 2011-03-01 2015-02-10 Micron Technology, Inc. Gated bipolar junction transistors
US8519431B2 (en) 2011-03-08 2013-08-27 Micron Technology, Inc. Thyristors
US8772848B2 (en) 2011-07-26 2014-07-08 Micron Technology, Inc. Circuit structures, memory circuitry, and methods
US9111611B2 (en) 2013-09-05 2015-08-18 Kabushiki Kaisha Toshiba Memory system
US9431603B1 (en) * 2015-05-15 2016-08-30 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM device
US9923139B2 (en) * 2016-03-11 2018-03-20 Micron Technology, Inc. Conductive hard mask for memory device formation
US9947400B2 (en) 2016-04-22 2018-04-17 Nantero, Inc. Methods for enhanced state retention within a resistive change cell
US10355206B2 (en) 2017-02-06 2019-07-16 Nantero, Inc. Sealed resistive change elements
KR20180095977A (ko) * 2017-02-20 2018-08-29 에스케이하이닉스 주식회사 카본 나노 튜브들을 갖는 시냅스를 포함하는 뉴로모픽 소자
CN110085589B (zh) * 2018-01-26 2021-03-26 中芯国际集成电路制造（天津）有限公司 碳纳米管模块、半导体器件及制造方法
CN109244079A (zh) * 2018-07-06 2019-01-18 成都皮兆永存科技有限公司 半导体存储器

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997032340A1 (en) 1996-03-01 1997-09-04 Micron Technology, Inc. Novel vertical diode structures with low series resistance
US5915167A (en) 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
US6034882A (en) 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6858481B2 (en) 2001-08-13 2005-02-22 Advanced Micro Devices, Inc. Memory device with active and passive layers
US7038935B2 (en) * 2002-08-02 2006-05-02 Unity Semiconductor Corporation 2-terminal trapped charge memory device with voltage switchable multi-level resistance
US6859382B2 (en) 2002-08-02 2005-02-22 Unity Semiconductor Corporation Memory array of a non-volatile ram
US7176064B2 (en) 2003-12-03 2007-02-13 Sandisk 3D Llc Memory cell comprising a semiconductor junction diode crystallized adjacent to a silicide
US6946719B2 (en) 2003-12-03 2005-09-20 Matrix Semiconductor, Inc Semiconductor device including junction diode contacting contact-antifuse unit comprising silicide
JP2006511965A (ja) 2002-12-19 2006-04-06 マトリックス セミコンダクター インコーポレイテッド 高密度不揮発性メモリを製作するための改良された方法
US7767499B2 (en) 2002-12-19 2010-08-03 Sandisk 3D Llc Method to form upward pointing p-i-n diodes having large and uniform current
US7150801B2 (en) 2003-02-26 2006-12-19 Mitsubishi Gas Chemical Company, Inc. Process for producing cold field-emission cathodes
US7606059B2 (en) * 2003-03-18 2009-10-20 Kabushiki Kaisha Toshiba Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array
US7780918B2 (en) 2003-05-14 2010-08-24 Nantero, Inc. Sensor platform using a horizontally oriented nanotube element
US20050064167A1 (en) 2003-09-12 2005-03-24 Nano-Proprietary, Inc. Carbon nanotubes
JP2007535106A (ja) 2004-04-27 2007-11-29 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 試料分析へのカーボンナノチューブの利用
US7405465B2 (en) 2004-09-29 2008-07-29 Sandisk 3D Llc Deposited semiconductor structure to minimize n-type dopant diffusion and method of making
GB0426863D0 (en) 2004-12-07 2005-01-12 Univ Southampton Method of manufacturing carbon nanotubes
US7208372B2 (en) 2005-01-19 2007-04-24 Sharp Laboratories Of America, Inc. Non-volatile memory resistor cell with nanotip electrode
US7579631B2 (en) 2005-03-22 2009-08-25 Spansion Llc Variable breakdown characteristic diode
US7145824B2 (en) 2005-03-22 2006-12-05 Spansion Llc Temperature compensation of thin film diode voltage threshold in memory sensing circuit
US20060276056A1 (en) 2005-04-05 2006-12-07 Nantero, Inc. Nanotube articles with adjustable electrical conductivity and methods of making the same
US7781862B2 (en) 2005-05-09 2010-08-24 Nantero, Inc. Two-terminal nanotube devices and systems and methods of making same
US20060250836A1 (en) 2005-05-09 2006-11-09 Matrix Semiconductor, Inc. Rewriteable memory cell comprising a diode and a resistance-switching material
US9196615B2 (en) * 2005-05-09 2015-11-24 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7479654B2 (en) 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US20060273298A1 (en) 2005-06-02 2006-12-07 Matrix Semiconductor, Inc. Rewriteable memory cell comprising a transistor and resistance-switching material in series
WO2006133949A2 (en) 2005-06-17 2006-12-21 Interuniversitair Microelektronica Centrum Formation of metal-containing nanoparticles for use as catalysts in carbon nanotube synthysis
US7286388B1 (en) 2005-06-23 2007-10-23 Spansion Llc Resistive memory device with improved data retention
US7482653B2 (en) 2005-07-20 2009-01-27 Micron Technology, Inc. Non-volatile memory with carbon nanotubes
JP2007049084A (ja) 2005-08-12 2007-02-22 Toshiba Corp スイッチ素子、メモリ素子および磁気抵抗効果素子
US20070238319A1 (en) 2005-08-31 2007-10-11 Jewell-Larsen Nels E Mechanically actuated nanotube switches
US7446044B2 (en) 2005-09-19 2008-11-04 California Institute Of Technology Carbon nanotube switches for memory, RF communications and sensing applications, and methods of making the same
JP5037804B2 (ja) * 2005-09-30 2012-10-03 富士通株式会社 垂直配向カーボンナノチューブを用いた電子デバイス
KR100695164B1 (ko) 2005-11-09 2007-03-14 삼성전자주식회사 스위칭 소자로서 트랜지스터 및 다이오드를 포함하는하이브리드 타입의 비휘발성 메모리 소자
US7385839B2 (en) 2005-12-01 2008-06-10 International Business Machines Corporation Memory devices using carbon nanotube (CNT) technologies
US20070132049A1 (en) 2005-12-12 2007-06-14 Stipe Barry C Unipolar resistance random access memory (RRAM) device and vertically stacked architecture
KR100674144B1 (ko) 2006-01-05 2007-01-29 한국과학기술원 탄소 나노 튜브를 이용한 상변화 메모리 및 이의 제조 방법
US7575984B2 (en) 2006-05-31 2009-08-18 Sandisk 3D Llc Conductive hard mask to protect patterned features during trench etch
EP2070088A4 (en) 2006-08-08 2009-07-29 Nantero Inc NON-VOLATILE RESISTIVE MEMORY, CIRCUIT BREAKERS AND OPERATING CIRCUITS WITH SCALABLE NANOTUBE SWITCHES WITH TWO TERMINALS
EP1892722A1 (en) 2006-08-25 2008-02-27 Infineon Technologies AG Information storage elements and methods of manufacture thereof
US8030637B2 (en) 2006-08-25 2011-10-04 Qimonda Ag Memory element using reversible switching between SP2 and SP3 hybridized carbon
US7638383B2 (en) 2006-09-19 2009-12-29 Intel Corporation Faceted catalytic dots for directed nanotube growth
KR100791948B1 (ko) 2006-09-27 2008-01-04 삼성전자주식회사 탄소나노튜브 배선 형성방법 및 이를 이용한 반도체 소자의배선 형성방법
US8188569B2 (en) 2006-12-15 2012-05-29 Qimonda Ag Phase change random access memory device with transistor, and method for fabricating a memory device
KR100801084B1 (ko) 2007-01-08 2008-02-05 삼성전자주식회사 저항체를 이용한 비휘발성 메모리 장치 및 그 제조 방법
WO2008118486A1 (en) 2007-03-27 2008-10-02 Sandisk 3D, Llc Memory cell comprising a carbon nanotube fabric element and a steering element and methods of forming the same
US8233308B2 (en) 2007-06-29 2012-07-31 Sandisk 3D Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US7846785B2 (en) 2007-06-29 2010-12-07 Sandisk 3D Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US20090166610A1 (en) 2007-12-31 2009-07-02 April Schricker Memory cell with planarized carbon nanotube layer and methods of forming the same
US8236623B2 (en) 2007-12-31 2012-08-07 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same

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