JP2011503670A - ディスプレイ回路を製造するための多色マスク方法 - Google Patents

ディスプレイ回路を製造するための多色マスク方法 Download PDF

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Publication number
JP2011503670A
JP2011503670A JP2010534943A JP2010534943A JP2011503670A JP 2011503670 A JP2011503670 A JP 2011503670A JP 2010534943 A JP2010534943 A JP 2010534943A JP 2010534943 A JP2010534943 A JP 2010534943A JP 2011503670 A JP2011503670 A JP 2011503670A
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color
mask
layer
pattern
multicolor mask
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Japanese (ja)
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JP2011503670A5 (enExample
Inventor
マリー アービング，リン
ハワード レビー，デイビッド
バッチ タイ，ラン
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イーストマン コダック カンパニー
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Publication of JP2011503670A5 publication Critical patent/JP2011503670A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
JP2010534943A 2007-11-20 2008-11-10 ディスプレイ回路を製造するための多色マスク方法 Pending JP2011503670A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/986,088 US8153352B2 (en) 2007-11-20 2007-11-20 Multicolored mask process for making display circuitry
PCT/US2008/012662 WO2009067154A1 (en) 2007-11-20 2008-11-10 Multicolored mask process for making display circuitry

Publications (2)

Publication Number Publication Date
JP2011503670A true JP2011503670A (ja) 2011-01-27
JP2011503670A5 JP2011503670A5 (enExample) 2012-01-05

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JP2010534943A Pending JP2011503670A (ja) 2007-11-20 2008-11-10 ディスプレイ回路を製造するための多色マスク方法

Country Status (4)

Country Link
US (2) US8153352B2 (enExample)
EP (2) EP2256554B1 (enExample)
JP (1) JP2011503670A (enExample)
WO (1) WO2009067154A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011505589A (ja) * 2007-11-20 2011-02-24 イーストマン コダック カンパニー 選択的領域堆積と組み合わせて着色マスクを使用する方法
JP2011507008A (ja) * 2007-11-20 2011-03-03 イーストマン コダック カンパニー マルチカラーマスク
JP2014041774A (ja) * 2012-08-23 2014-03-06 Semiconductor Energy Lab Co Ltd 表示装置の作製方法
KR102131047B1 (ko) * 2019-01-09 2020-07-07 성균관대학교산학협력단 박막트랜지스터를 포함하는 평판 디스플레이 픽셀의 자기정렬 제조방법

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US7972898B2 (en) * 2007-09-26 2011-07-05 Eastman Kodak Company Process for making doped zinc oxide
US8153352B2 (en) * 2007-11-20 2012-04-10 Eastman Kodak Company Multicolored mask process for making display circuitry
US8221964B2 (en) * 2007-11-20 2012-07-17 Eastman Kodak Company Integrated color mask
KR100908236B1 (ko) * 2008-04-24 2009-07-20 삼성모바일디스플레이주식회사 유기 발광 디스플레이 장치 및 그 제조방법
CN102184928A (zh) * 2010-12-29 2011-09-14 友达光电股份有限公司 显示元件及其制造方法
US8912020B2 (en) 2011-11-23 2014-12-16 International Business Machines Corporation Integrating active matrix inorganic light emitting diodes for display devices
CN103309533B (zh) * 2013-05-09 2016-05-04 晟光科技股份有限公司 一种ogs触摸屏黑色绝缘薄膜边框的制作方法
KR102098261B1 (ko) * 2014-06-18 2020-04-08 엑스-셀레프린트 리미티드 마이크로 어셈블링된 led 디스플레이들
KR20160047673A (ko) 2014-10-22 2016-05-03 삼성디스플레이 주식회사 유기 발광 디스플레이 장치와, 이의 제조 방법
KR102379194B1 (ko) 2015-05-11 2022-03-29 삼성디스플레이 주식회사 유기 발광 표시 패널 및 이의 제조 방법
CN104900531A (zh) * 2015-06-08 2015-09-09 京东方科技集团股份有限公司 一种氧化物薄膜晶体管、阵列基板及制作方法、显示装置
CN106057818B (zh) * 2016-05-26 2019-05-07 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
US9975372B2 (en) * 2016-06-21 2018-05-22 Charles White Multi-dimensional art works and methods
KR102603867B1 (ko) 2016-08-01 2023-11-21 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
CN108335985B (zh) * 2017-01-20 2020-07-28 中国科学院物理研究所 一种全透明薄膜晶体管的制备方法
KR102458680B1 (ko) 2017-04-28 2022-10-26 삼성디스플레이 주식회사 유기발광 표시장치 및 그 제조방법
CN111755466B (zh) * 2019-03-28 2023-06-16 群创光电股份有限公司 电子装置
CN111162129A (zh) * 2020-01-21 2020-05-15 京东方科技集团股份有限公司 晶体管及其制备方法、显示基板和显示装置

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011505589A (ja) * 2007-11-20 2011-02-24 イーストマン コダック カンパニー 選択的領域堆積と組み合わせて着色マスクを使用する方法
JP2011507008A (ja) * 2007-11-20 2011-03-03 イーストマン コダック カンパニー マルチカラーマスク
JP2014041774A (ja) * 2012-08-23 2014-03-06 Semiconductor Energy Lab Co Ltd 表示装置の作製方法
KR102131047B1 (ko) * 2019-01-09 2020-07-07 성균관대학교산학협력단 박막트랜지스터를 포함하는 평판 디스플레이 픽셀의 자기정렬 제조방법

Also Published As

Publication number Publication date
US20090130600A1 (en) 2009-05-21
EP2256554B1 (en) 2013-04-03
US20120181554A1 (en) 2012-07-19
WO2009067154A1 (en) 2009-05-28
EP2256554A3 (en) 2011-07-06
US8153352B2 (en) 2012-04-10
EP2212748A1 (en) 2010-08-04
EP2256554A2 (en) 2010-12-01
US8664673B2 (en) 2014-03-04

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