JP2011503326A5 - - Google Patents
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- Publication number
- JP2011503326A5 JP2011503326A5 JP2010534130A JP2010534130A JP2011503326A5 JP 2011503326 A5 JP2011503326 A5 JP 2011503326A5 JP 2010534130 A JP2010534130 A JP 2010534130A JP 2010534130 A JP2010534130 A JP 2010534130A JP 2011503326 A5 JP2011503326 A5 JP 2011503326A5
- Authority
- JP
- Japan
- Prior art keywords
- composition
- metal ions
- water
- polyhedral silsesquioxane
- composition according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021645 metal ion Inorganic materials 0.000 claims 9
- 238000000034 method Methods 0.000 claims 9
- 150000003839 salts Chemical class 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 239000007800 oxidant agent Substances 0.000 claims 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 239000003989 dielectric material Substances 0.000 claims 2
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 claims 2
- 239000002105 nanoparticle Substances 0.000 claims 2
- 239000002210 silicon-based material Substances 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- 125000006702 (C1-C18) alkyl group Chemical group 0.000 claims 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 1
- 125000003545 alkoxy group Chemical group 0.000 claims 1
- 239000002738 chelating agent Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000011236 particulate material Substances 0.000 claims 1
- 239000013618 particulate matter Substances 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 125000005207 tetraalkylammonium group Chemical group 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US98770607P | 2007-11-13 | 2007-11-13 | |
| US60/987,706 | 2007-11-13 | ||
| PCT/US2008/083161 WO2009064745A1 (en) | 2007-11-13 | 2008-11-12 | High negative zeta potential polyhedral silsesquioxane composition and method for damage free semiconductor wet clean |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011503326A JP2011503326A (ja) | 2011-01-27 |
| JP2011503326A5 true JP2011503326A5 (OSRAM) | 2011-12-01 |
| JP5244916B2 JP5244916B2 (ja) | 2013-07-24 |
Family
ID=40469771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010534130A Active JP5244916B2 (ja) | 2007-11-13 | 2008-11-12 | 損傷のない半導体の湿式洗浄のための高い負のゼータ電位の多面体シルセスキオキサン組成物および方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7976638B2 (OSRAM) |
| EP (1) | EP2215203B1 (OSRAM) |
| JP (1) | JP5244916B2 (OSRAM) |
| KR (1) | KR101569338B1 (OSRAM) |
| CN (1) | CN101855334B (OSRAM) |
| ES (1) | ES2386692T3 (OSRAM) |
| TW (1) | TWI472579B (OSRAM) |
| WO (1) | WO2009064745A1 (OSRAM) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7129199B2 (en) * | 2002-08-12 | 2006-10-31 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
| US8518865B2 (en) * | 2009-08-31 | 2013-08-27 | Air Products And Chemicals, Inc. | Water-rich stripping and cleaning formulation and method for using same |
| US9257270B2 (en) * | 2011-08-15 | 2016-02-09 | Ekc Technology | Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material |
| KR101857807B1 (ko) * | 2011-08-22 | 2018-06-19 | 동우 화인켐 주식회사 | 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법 |
| KR101880300B1 (ko) * | 2011-08-23 | 2018-08-17 | 동우 화인켐 주식회사 | 평판 디스플레이 제조에 필요한 세정액 조성물 및 이를 이용한 세정방법 |
| KR101880305B1 (ko) * | 2011-12-16 | 2018-07-20 | 동우 화인켐 주식회사 | 전자재료용 세정액 조성물 |
| KR101880306B1 (ko) * | 2011-12-19 | 2018-07-20 | 동우 화인켐 주식회사 | 전자재료용 세정액 조성물 |
| KR101965904B1 (ko) * | 2011-12-20 | 2019-08-14 | 동우 화인켐 주식회사 | 액정 표시장치용 어레이 기판 제조방법 |
| KR101978521B1 (ko) * | 2012-10-05 | 2019-05-15 | 동우 화인켐 주식회사 | 갈바닉 부식을 억제하는 포토레지스트 박리액 조성물 |
| KR101957524B1 (ko) * | 2012-12-31 | 2019-06-19 | 동우 화인켐 주식회사 | 포토레지스트 박리액 조성물 |
| KR101957525B1 (ko) * | 2012-12-31 | 2019-06-19 | 동우 화인켐 주식회사 | 포토레지스트 박리액 조성물 |
| JP6460729B2 (ja) * | 2014-10-31 | 2019-01-30 | 富士フイルム株式会社 | 基板処理方法、及び、半導体素子の製造方法 |
| KR102766830B1 (ko) * | 2018-01-16 | 2025-02-14 | 가부시키가이샤 도쿠야마 | 차아염소산 이온을 포함하는 반도체 웨이퍼의 처리액 |
| JP6552676B2 (ja) * | 2018-05-10 | 2019-07-31 | 富士フイルム株式会社 | ルテニウム含有膜が形成された基板におけるルテニウム付着物除去用除去液 |
| KR102002276B1 (ko) * | 2019-05-03 | 2019-07-19 | 동우 화인켐 주식회사 | 갈바닉 부식을 억제하는 포토레지스트 박리액 조성물 |
| JP2021042326A (ja) * | 2019-09-12 | 2021-03-18 | 日華化学株式会社 | 電解洗浄剤及び金属の洗浄方法 |
| WO2021060234A1 (ja) | 2019-09-27 | 2021-04-01 | 株式会社トクヤマ | ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法 |
| TWI810469B (zh) * | 2019-09-27 | 2023-08-01 | 日商德山股份有限公司 | 釕的半導體用處理液及其製造方法 |
| KR102345211B1 (ko) * | 2020-09-21 | 2022-01-03 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 및 이를 이용한 방법 |
| KR102273127B1 (ko) * | 2020-09-21 | 2021-07-05 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 및 이를 이용한 방법 |
| KR20240031136A (ko) * | 2022-08-30 | 2024-03-07 | 가부시끼가이샤 도꾸야마 | 실리콘 에칭액 및 그 제조 방법, 기판의 처리 방법, 그리고 실리콘 디바이스의 제조 방법 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3837397A1 (de) * | 1988-11-03 | 1990-05-10 | Wacker Chemie Gmbh | Neue organooligosilsesquioxane |
| US5466389A (en) * | 1994-04-20 | 1995-11-14 | J. T. Baker Inc. | PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates |
| US5561105A (en) * | 1995-05-08 | 1996-10-01 | Ocg Microelectronic Materials, Inc. | Chelating reagent containing photoresist stripper composition |
| US5759973A (en) * | 1996-09-06 | 1998-06-02 | Olin Microelectronic Chemicals, Inc. | Photoresist stripping and cleaning compositions |
| US5817610A (en) * | 1996-09-06 | 1998-10-06 | Olin Microelectronic Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
| US6066609A (en) * | 1997-07-31 | 2000-05-23 | Siemens Aktiengesellschaft | Aqueous solution for cleaning a semiconductor substrate |
| US5935871A (en) * | 1997-08-22 | 1999-08-10 | Motorola, Inc. | Process for forming a semiconductor device |
| US6261466B1 (en) * | 1997-12-11 | 2001-07-17 | Shipley Company, L.L.C. | Composition for circuit board manufacture |
| DK1105778T3 (da) | 1998-05-18 | 2009-10-19 | Mallinckrodt Baker Inc | Silikatholdige alkaliske sammensætninger til rensning af mikorelektroniske substrater |
| JP2000091289A (ja) * | 1998-09-10 | 2000-03-31 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| US6475966B1 (en) * | 2000-02-25 | 2002-11-05 | Shipley Company, L.L.C. | Plasma etching residue removal |
| EP1138726B1 (en) * | 2000-03-27 | 2005-01-12 | Shipley Company LLC | Polymer remover |
| US6599370B2 (en) | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
| MY131912A (en) * | 2001-07-09 | 2007-09-28 | Avantor Performance Mat Inc | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
| TWI276682B (en) | 2001-11-16 | 2007-03-21 | Mitsubishi Chem Corp | Substrate surface cleaning liquid mediums and cleaning method |
| US20040220066A1 (en) | 2003-05-01 | 2004-11-04 | Rohm And Haas Electronic Materials, L.L.C. | Stripper |
| EP1648991B1 (en) * | 2003-06-27 | 2007-10-17 | Interuniversitair Microelektronica Centrum ( Imec) | Semiconductor cleaning solution |
| US7576169B2 (en) * | 2003-10-23 | 2009-08-18 | The Regents Of The University Of Michigan | Facile synthesis of polyhedral silsesquioxane anions and use thereof |
| US7887641B2 (en) * | 2004-01-09 | 2011-02-15 | Ecolab Usa Inc. | Neutral or alkaline medium chain peroxycarboxylic acid compositions and methods employing them |
| US8338087B2 (en) * | 2004-03-03 | 2012-12-25 | Advanced Technology Materials, Inc | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
| US7320956B2 (en) * | 2004-04-01 | 2008-01-22 | 3M Innovative Properties Company | Aqueous cleaning/treatment composition for fibrous substrates |
| WO2006110279A1 (en) * | 2005-04-08 | 2006-10-19 | Sachem, Inc. | Selective wet etching of metal nitrides |
| JP2009512194A (ja) | 2005-10-05 | 2009-03-19 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | ポストエッチング残渣を除去するための酸化性水性洗浄剤 |
-
2008
- 2008-11-12 ES ES08849368T patent/ES2386692T3/es active Active
- 2008-11-12 JP JP2010534130A patent/JP5244916B2/ja active Active
- 2008-11-12 CN CN200880115634.4A patent/CN101855334B/zh not_active Expired - Fee Related
- 2008-11-12 KR KR1020107010520A patent/KR101569338B1/ko not_active Expired - Fee Related
- 2008-11-12 WO PCT/US2008/083161 patent/WO2009064745A1/en not_active Ceased
- 2008-11-12 US US12/269,121 patent/US7976638B2/en active Active
- 2008-11-12 EP EP08849368A patent/EP2215203B1/en not_active Not-in-force
- 2008-11-13 TW TW97143846A patent/TWI472579B/zh not_active IP Right Cessation
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