JP2011501779A5 - - Google Patents
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- Publication number
- JP2011501779A5 JP2011501779A5 JP2010526903A JP2010526903A JP2011501779A5 JP 2011501779 A5 JP2011501779 A5 JP 2011501779A5 JP 2010526903 A JP2010526903 A JP 2010526903A JP 2010526903 A JP2010526903 A JP 2010526903A JP 2011501779 A5 JP2011501779 A5 JP 2011501779A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- deposition
- metal
- gas
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 15
- 239000000758 substrate Substances 0.000 claims 13
- 238000000151 deposition Methods 0.000 claims 11
- 230000008021 deposition Effects 0.000 claims 10
- 239000000463 material Substances 0.000 claims 10
- 238000000231 atomic layer deposition Methods 0.000 claims 5
- 239000003112 inhibitor Substances 0.000 claims 5
- 229910052751 metal Inorganic materials 0.000 claims 5
- 239000002184 metal Substances 0.000 claims 5
- 125000005375 organosiloxane group Chemical group 0.000 claims 5
- 229920000642 polymer Polymers 0.000 claims 5
- 239000010409 thin film Substances 0.000 claims 5
- 150000001875 compounds Chemical class 0.000 claims 3
- 230000002401 inhibitory effect Effects 0.000 claims 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 230000001419 dependent effect Effects 0.000 claims 2
- 239000011159 matrix material Substances 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 238000003384 imaging method Methods 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 238000010926 purge Methods 0.000 claims 1
- 239000000376 reactant Substances 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 239000010948 rhodium Substances 0.000 claims 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims 1
- 229920002554 vinyl polymer Polymers 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/861,705 US8017183B2 (en) | 2007-09-26 | 2007-09-26 | Organosiloxane materials for selective area deposition of inorganic materials |
| PCT/US2008/010824 WO2009042054A2 (en) | 2007-09-26 | 2008-09-17 | Organosiloxane materials for selective area deposition of inorganic materials |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011501779A JP2011501779A (ja) | 2011-01-13 |
| JP2011501779A5 true JP2011501779A5 (OSRAM) | 2011-11-10 |
Family
ID=40377367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010526903A Pending JP2011501779A (ja) | 2007-09-26 | 2008-09-17 | 無機材料を選択領域堆積するためのオルガノシロキサン材料 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8017183B2 (OSRAM) |
| EP (1) | EP2193218B1 (OSRAM) |
| JP (1) | JP2011501779A (OSRAM) |
| CN (1) | CN101809187B (OSRAM) |
| AT (1) | ATE542929T1 (OSRAM) |
| TW (1) | TWI459467B (OSRAM) |
| WO (1) | WO2009042054A2 (OSRAM) |
Families Citing this family (66)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080166880A1 (en) * | 2007-01-08 | 2008-07-10 | Levy David H | Delivery device for deposition |
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| US8398770B2 (en) * | 2007-09-26 | 2013-03-19 | Eastman Kodak Company | Deposition system for thin film formation |
| US7972898B2 (en) * | 2007-09-26 | 2011-07-05 | Eastman Kodak Company | Process for making doped zinc oxide |
| EP2159304A1 (en) * | 2008-08-27 | 2010-03-03 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Apparatus and method for atomic layer deposition |
| KR101691560B1 (ko) * | 2009-11-24 | 2017-01-10 | 삼성디스플레이 주식회사 | 표시기판 및 이의 제조방법 |
| EP2360293A1 (en) | 2010-02-11 | 2011-08-24 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Method and apparatus for depositing atomic layers on a substrate |
| EP2362002A1 (en) | 2010-02-18 | 2011-08-31 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Continuous patterned layer deposition |
| EP2362411A1 (en) | 2010-02-26 | 2011-08-31 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Apparatus and method for reactive ion etching |
| JP5618588B2 (ja) * | 2010-03-24 | 2014-11-05 | キヤノン株式会社 | インプリント方法 |
| WO2011130509A1 (en) * | 2010-04-15 | 2011-10-20 | The Board Of Trustees Of The University Of Illinois | Mutants of l-arabinitol 4-dehydrogenase from neurospora crassa |
| WO2012161051A1 (ja) * | 2011-05-20 | 2012-11-29 | 住友商事株式会社 | パターン構造体の製造方法 |
| US8273654B1 (en) | 2011-09-29 | 2012-09-25 | Eastman Kodak Company | Producing a vertical transistor including reentrant profile |
| US8623757B2 (en) | 2011-09-29 | 2014-01-07 | Eastmak Kodak Company | Producing a vertical transistor including reentrant profile |
| US8618003B2 (en) | 2011-12-05 | 2013-12-31 | Eastman Kodak Company | Method of making electronic devices using selective deposition |
| US8653516B1 (en) | 2012-08-31 | 2014-02-18 | Eastman Kodak Company | High performance thin film transistor |
| US8791023B2 (en) * | 2012-08-31 | 2014-07-29 | Eastman Kodak Company | Patterned thin film dielectric layer formation |
| US8927434B2 (en) * | 2012-08-31 | 2015-01-06 | Eastman Kodak Company | Patterned thin film dielectric stack formation |
| US20140065838A1 (en) * | 2012-08-31 | 2014-03-06 | Carolyn R. Ellinger | Thin film dielectric layer formation |
| US8846545B2 (en) | 2012-08-31 | 2014-09-30 | Eastman Kodak Company | Method of forming patterned thin film dielectric stack |
| JP5432396B1 (ja) | 2013-02-28 | 2014-03-05 | 三井造船株式会社 | 成膜装置及びインジェクタ |
| JP5432395B1 (ja) * | 2013-02-28 | 2014-03-05 | 三井造船株式会社 | 成膜装置及び成膜方法 |
| US8921236B1 (en) | 2013-06-21 | 2014-12-30 | Eastman Kodak Company | Patterning for selective area deposition |
| US9425078B2 (en) * | 2014-02-26 | 2016-08-23 | Lam Research Corporation | Inhibitor plasma mediated atomic layer deposition for seamless feature fill |
| US9331205B2 (en) | 2014-03-06 | 2016-05-03 | Eastman Kodak Company | VTFT with post, cap, and aligned gate |
| US9142647B1 (en) | 2014-03-06 | 2015-09-22 | Eastman Kodak Company | VTFT formation using selective area deposition |
| US9214560B2 (en) | 2014-03-06 | 2015-12-15 | Eastman Kodak Company | VTFT including overlapping electrodes |
| US9236486B2 (en) | 2014-03-06 | 2016-01-12 | Eastman Kodak Company | Offset independently operable VTFT electrodes |
| US9129993B1 (en) | 2014-03-06 | 2015-09-08 | Eastman Kodak Company | Forming a VTFT using printing |
| US9198283B2 (en) | 2014-03-06 | 2015-11-24 | Eastman Kodak Company | Vertically spaced electrode structure |
| US9117914B1 (en) | 2014-03-06 | 2015-08-25 | Eastman Kodak Company | VTFT with polymer core |
| US9153445B2 (en) | 2014-03-06 | 2015-10-06 | Eastman Kodak Company | Forming a VTFT with aligned gate |
| US9202898B2 (en) | 2014-03-06 | 2015-12-01 | Eastman Kodak Company | Fabricating VTFT with polymer core |
| US9147770B1 (en) | 2014-03-06 | 2015-09-29 | Eastman Kodak Company | VTFT with extended electrode |
| US9123815B1 (en) | 2014-03-06 | 2015-09-01 | Eastman Kodak Company | VTFTs including offset electrodes |
| US9178029B2 (en) | 2014-03-06 | 2015-11-03 | Eastman Kodak Company | Forming a VTFT gate using printing |
| US9153698B2 (en) | 2014-03-06 | 2015-10-06 | Eastman Kodak Company | VTFT with gate aligned to vertical structure |
| US9093470B1 (en) | 2014-03-06 | 2015-07-28 | Eastman Kodak Company | VTFT formation using capillary action |
| US9368490B2 (en) | 2014-10-29 | 2016-06-14 | Eastman Kodak Company | Enhancement-depletion mode inverter with two transistor architectures |
| US9634145B2 (en) | 2014-10-29 | 2017-04-25 | Eastman Kodak Company | TFT substrate with variable dielectric thickness |
| US9368491B2 (en) | 2014-10-29 | 2016-06-14 | Eastman Kodak Company | Enhancement mode inverter with variable thickness dielectric stack |
| TWI627192B (zh) | 2015-03-13 | 2018-06-21 | 村田製作所股份有限公司 | Atomic layer deposition inhibiting material |
| GB201514501D0 (en) * | 2015-08-14 | 2015-09-30 | Semblant Ltd | Electroless plating method |
| KR102420015B1 (ko) * | 2015-08-28 | 2022-07-12 | 삼성전자주식회사 | Cs-ald 장치의 샤워헤드 |
| CN105908151B (zh) * | 2016-03-01 | 2018-11-30 | 江南大学 | 一种纳米薄膜的原子层沉积定量建模方法 |
| US10020327B2 (en) | 2016-06-07 | 2018-07-10 | Eastman Kodak Company | Method for selective thin film deposition |
| US10573522B2 (en) | 2016-08-16 | 2020-02-25 | Lam Research Corporation | Method for preventing line bending during metal fill process |
| TWI620830B (zh) * | 2016-12-30 | 2018-04-11 | Nat Chung Shan Inst Science & Tech | Batch coating process system |
| US10400332B2 (en) * | 2017-03-14 | 2019-09-03 | Eastman Kodak Company | Deposition system with interlocking deposition heads |
| US10163695B1 (en) * | 2017-06-27 | 2018-12-25 | Lam Research Corporation | Self-forming barrier process |
| CN107419239A (zh) * | 2017-07-28 | 2017-12-01 | 京东方科技集团股份有限公司 | 用于镀膜的喷头、设备和相应方法 |
| AU2018355524B2 (en) | 2017-10-26 | 2020-12-10 | Syed Taymur Ahmad | Composition comprising non-Newtonian fluids for hydrophobic, oleophobic, and oleophilic coatings, and methods of using the same |
| US11823909B2 (en) * | 2018-01-16 | 2023-11-21 | Lam Research Corporation | Selective processing with etch residue-based inhibitors |
| KR102792797B1 (ko) | 2018-11-19 | 2025-04-07 | 램 리써치 코포레이션 | 텅스텐을 위한 몰리브덴 템플릿들 |
| JP7581213B2 (ja) | 2019-01-28 | 2024-11-12 | ラム リサーチ コーポレーション | 金属膜の蒸着 |
| EP4596776A3 (en) * | 2019-02-19 | 2025-10-29 | Xefco Pty Ltd | System for treatment and/or coating of substrates |
| SG11202109796QA (en) | 2019-03-11 | 2021-10-28 | Lam Res Corp | Precursors for deposition of molybdenum-containing films |
| EP3714914A1 (en) * | 2019-03-29 | 2020-09-30 | Picosun Oy | Spring loaded medical device |
| WO2021046058A1 (en) | 2019-09-03 | 2021-03-11 | Lam Research Corporation | Molybdenum deposition |
| CN110791747A (zh) * | 2019-10-15 | 2020-02-14 | 江苏卓高新材料科技有限公司 | 一种用于薄膜材料表面沉积的沉积装置及沉积方法 |
| JP2022551965A (ja) | 2019-10-15 | 2022-12-14 | ラム リサーチ コーポレーション | モリブデン充填 |
| KR102254394B1 (ko) * | 2020-07-16 | 2021-05-24 | 솔브레인 주식회사 | 박막 형성용 성장 억제제, 이를 이용한 박막 형성 방법 및 이로부터 제조된 반도체 기판 |
| CN116648301A (zh) * | 2020-11-10 | 2023-08-25 | 卢米瑞德思英国有限公司 | 用于检测液体样本中的靶标的系统 |
| KR20230032924A (ko) * | 2021-08-31 | 2023-03-07 | 에이에스엠 아이피 홀딩 비.브이. | 억제제를 사용하는 갭 증착용 방법 및 시스템 |
| CN118434908A (zh) * | 2021-12-16 | 2024-08-02 | 朗姆研究公司 | 使用含卤素沉积抑制剂的凹陷特征中的金属沉积 |
Family Cites Families (20)
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| FI57975C (fi) * | 1979-02-28 | 1980-11-10 | Lohja Ab Oy | Foerfarande och anordning vid uppbyggande av tunna foereningshinnor |
| US4802951A (en) * | 1986-03-07 | 1989-02-07 | Trustees Of Boston University | Method for parallel fabrication of nanometer scale multi-device structures |
| US5474796A (en) * | 1991-09-04 | 1995-12-12 | Protogene Laboratories, Inc. | Method and apparatus for conducting an array of chemical reactions on a support surface |
| US5512131A (en) * | 1993-10-04 | 1996-04-30 | President And Fellows Of Harvard College | Formation of microstamped patterns on surfaces and derivative articles |
| WO1997007429A1 (en) | 1995-08-18 | 1997-02-27 | President And Fellows Of Harvard College | Self-assembled monolayer directed patterning of surfaces |
| KR20020056260A (ko) * | 2000-12-29 | 2002-07-10 | 박종섭 | 반도체 소자의 금속 게이트 형성방법 |
| JP4099116B2 (ja) * | 2002-06-14 | 2008-06-11 | エーエスエムエル ネザーランズ ビー．ブイ． | 自己集合単分子層を伴う光学エレメントを備えたｅｕｖリソグラフィ投影装置、自己集合単分子層を伴う光学エレメント、自己集合単分子層を適用する方法、デバイス製造法 |
| US20050084610A1 (en) * | 2002-08-13 | 2005-04-21 | Selitser Simon I. | Atmospheric pressure molecular layer CVD |
| JP3950774B2 (ja) * | 2002-09-20 | 2007-08-01 | キヤノンアネルバ株式会社 | 導電性膜の製造方法 |
| US6821563B2 (en) * | 2002-10-02 | 2004-11-23 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
| US6869876B2 (en) * | 2002-11-05 | 2005-03-22 | Air Products And Chemicals, Inc. | Process for atomic layer deposition of metal films |
| JP2005005383A (ja) * | 2003-06-10 | 2005-01-06 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
| TWI221826B (en) * | 2003-12-26 | 2004-10-11 | Ind Tech Res Inst | Mold core preparation method by using chemical self-assembly process |
| US7663057B2 (en) * | 2004-02-19 | 2010-02-16 | Nanosolar, Inc. | Solution-based fabrication of photovoltaic cell |
| CN101088044A (zh) * | 2004-12-23 | 2007-12-12 | 皇家飞利浦电子股份有限公司 | 基于sam生长的纳米制造 |
| US7462561B2 (en) * | 2005-01-27 | 2008-12-09 | David Lu | Contact structure formed using supercritical cleaning fluid and ALCVD |
| TWI250594B (en) * | 2005-03-11 | 2006-03-01 | Univ Nat Taiwan | Method for self-assembling microstructure |
| US7160819B2 (en) * | 2005-04-25 | 2007-01-09 | Sharp Laboratories Of America, Inc. | Method to perform selective atomic layer deposition of zinc oxide |
| US7871933B2 (en) * | 2005-12-01 | 2011-01-18 | International Business Machines Corporation | Combined stepper and deposition tool |
| US8030212B2 (en) * | 2007-09-26 | 2011-10-04 | Eastman Kodak Company | Process for selective area deposition of inorganic materials |
-
2007
- 2007-09-26 US US11/861,705 patent/US8017183B2/en not_active Expired - Fee Related
-
2008
- 2008-09-17 JP JP2010526903A patent/JP2011501779A/ja active Pending
- 2008-09-17 CN CN200880109095.3A patent/CN101809187B/zh not_active Expired - Fee Related
- 2008-09-17 EP EP08833324A patent/EP2193218B1/en not_active Not-in-force
- 2008-09-17 WO PCT/US2008/010824 patent/WO2009042054A2/en not_active Ceased
- 2008-09-17 AT AT08833324T patent/ATE542929T1/de active
- 2008-09-25 TW TW097136917A patent/TWI459467B/zh not_active IP Right Cessation
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