CN101809187B - 用于无机材料的选择区域沉积的有机硅氧烷材料 - Google Patents

用于无机材料的选择区域沉积的有机硅氧烷材料 Download PDF

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Publication number
CN101809187B
CN101809187B CN200880109095.3A CN200880109095A CN101809187B CN 101809187 B CN101809187 B CN 101809187B CN 200880109095 A CN200880109095 A CN 200880109095A CN 101809187 B CN101809187 B CN 101809187B
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China
Prior art keywords
substrate
deposition
gas
flow
ald
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Expired - Fee Related
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CN200880109095.3A
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English (en)
Chinese (zh)
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CN101809187A (zh
Inventor
C·杨
L·M·欧文
D·H·莱维
P·J·考德里-科尔万
D·C·弗里曼
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Eastman Kodak Co
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Eastman Kodak Co
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Surface Treatment Of Glass (AREA)
  • Silicon Compounds (AREA)
CN200880109095.3A 2007-09-26 2008-09-17 用于无机材料的选择区域沉积的有机硅氧烷材料 Expired - Fee Related CN101809187B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/861,705 2007-09-26
US11/861705 2007-09-26
US11/861,705 US8017183B2 (en) 2007-09-26 2007-09-26 Organosiloxane materials for selective area deposition of inorganic materials
PCT/US2008/010824 WO2009042054A2 (en) 2007-09-26 2008-09-17 Organosiloxane materials for selective area deposition of inorganic materials

Publications (2)

Publication Number Publication Date
CN101809187A CN101809187A (zh) 2010-08-18
CN101809187B true CN101809187B (zh) 2013-02-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880109095.3A Expired - Fee Related CN101809187B (zh) 2007-09-26 2008-09-17 用于无机材料的选择区域沉积的有机硅氧烷材料

Country Status (7)

Country Link
US (1) US8017183B2 (OSRAM)
EP (1) EP2193218B1 (OSRAM)
JP (1) JP2011501779A (OSRAM)
CN (1) CN101809187B (OSRAM)
AT (1) ATE542929T1 (OSRAM)
TW (1) TWI459467B (OSRAM)
WO (1) WO2009042054A2 (OSRAM)

Cited By (1)

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TWI620830B (zh) * 2016-12-30 2018-04-11 Nat Chung Shan Inst Science & Tech Batch coating process system

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JP5618588B2 (ja) * 2010-03-24 2014-11-05 キヤノン株式会社 インプリント方法
WO2011130509A1 (en) * 2010-04-15 2011-10-20 The Board Of Trustees Of The University Of Illinois Mutants of l-arabinitol 4-dehydrogenase from neurospora crassa
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US9153445B2 (en) 2014-03-06 2015-10-06 Eastman Kodak Company Forming a VTFT with aligned gate
US9123815B1 (en) 2014-03-06 2015-09-01 Eastman Kodak Company VTFTs including offset electrodes
US9236486B2 (en) 2014-03-06 2016-01-12 Eastman Kodak Company Offset independently operable VTFT electrodes
US9093470B1 (en) 2014-03-06 2015-07-28 Eastman Kodak Company VTFT formation using capillary action
US9153698B2 (en) 2014-03-06 2015-10-06 Eastman Kodak Company VTFT with gate aligned to vertical structure
US9202898B2 (en) 2014-03-06 2015-12-01 Eastman Kodak Company Fabricating VTFT with polymer core
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US9129993B1 (en) 2014-03-06 2015-09-08 Eastman Kodak Company Forming a VTFT using printing
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TWI620830B (zh) * 2016-12-30 2018-04-11 Nat Chung Shan Inst Science & Tech Batch coating process system

Also Published As

Publication number Publication date
JP2011501779A (ja) 2011-01-13
EP2193218B1 (en) 2012-01-25
WO2009042054A3 (en) 2009-06-04
WO2009042054A2 (en) 2009-04-02
TWI459467B (zh) 2014-11-01
TW200926299A (en) 2009-06-16
ATE542929T1 (de) 2012-02-15
US8017183B2 (en) 2011-09-13
US20090081374A1 (en) 2009-03-26
EP2193218A2 (en) 2010-06-09
CN101809187A (zh) 2010-08-18

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