JP2011249623A - 光電変換素子とその製造方法、および固体撮像素子とその製造方法 - Google Patents

光電変換素子とその製造方法、および固体撮像素子とその製造方法 Download PDF

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Publication number
JP2011249623A
JP2011249623A JP2010122237A JP2010122237A JP2011249623A JP 2011249623 A JP2011249623 A JP 2011249623A JP 2010122237 A JP2010122237 A JP 2010122237A JP 2010122237 A JP2010122237 A JP 2010122237A JP 2011249623 A JP2011249623 A JP 2011249623A
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Prior art keywords
electrode
photoelectric conversion
layer
substrate
functional layer
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JP2010122237A
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English (en)
Japanese (ja)
Inventor
Ryota Sakaida
良太 境田
Masayuki Matsunaga
誠之 松長
Keishi Tachikawa
景士 立川
Motonari Katsuno
元成 勝野
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Panasonic Corp
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Panasonic Corp
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Priority to JP2010122237A priority Critical patent/JP2011249623A/ja
Priority to PCT/JP2010/006260 priority patent/WO2011148436A1/fr
Publication of JP2011249623A publication Critical patent/JP2011249623A/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors

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  • Solid State Image Pick-Up Elements (AREA)
JP2010122237A 2010-05-28 2010-05-28 光電変換素子とその製造方法、および固体撮像素子とその製造方法 Withdrawn JP2011249623A (ja)

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Application Number Priority Date Filing Date Title
JP2010122237A JP2011249623A (ja) 2010-05-28 2010-05-28 光電変換素子とその製造方法、および固体撮像素子とその製造方法
PCT/JP2010/006260 WO2011148436A1 (fr) 2010-05-28 2010-10-22 Elément de conversion photoélectrique, son procédé de production, élément d'imagerie à semi-conducteur et son procédé de production

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JP2010122237A JP2011249623A (ja) 2010-05-28 2010-05-28 光電変換素子とその製造方法、および固体撮像素子とその製造方法

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JP (1) JP2011249623A (fr)
WO (1) WO2011148436A1 (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014208047A1 (fr) * 2013-06-24 2014-12-31 パナソニックＩｐマネジメント株式会社 Dispositif de capture d'image à semi-conducteurs et son procédé de production
US9293489B2 (en) 2013-07-01 2016-03-22 Samsung Electronics Co., Ltd. CMOS image sensor
US9343492B2 (en) 2013-12-30 2016-05-17 Samsung Electronics Co., Ltd. CMOS image sensor based on thin-film on asic and operating method thereof
JP2017005196A (ja) * 2015-06-15 2017-01-05 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および固体撮像素子の製造方法、光電変換素子、撮像装置、電子機器、並びに光電変換素子。
US9647018B2 (en) 2014-09-26 2017-05-09 Canon Kabushiki Kaisha Imaging device including an intermediate electrode between first and second pixel electrodes and in contact with a photoelectric conversion film
WO2017086180A1 (fr) * 2015-11-18 2017-05-26 ソニー株式会社 Élément de prise de vues à semi-conducteurs, procédé de fabrication, et dispositif électronique
KR20190138370A (ko) * 2018-06-05 2019-12-13 삼성전자주식회사 이미지 센서 및 그 제조 방법
WO2021054049A1 (fr) * 2019-09-19 2021-03-25 株式会社ジャパンディスプレイ Dispositif de détection
CN114530468A (zh) * 2021-11-19 2022-05-24 中芯热成科技(北京)有限责任公司 红外焦平面探测器及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3674942B2 (ja) * 1999-08-02 2005-07-27 カシオ計算機株式会社 光電変換素子、フォトセンサアレイおよび２次元画像の読取装置
JP2006066535A (ja) * 2004-08-25 2006-03-09 Fuji Photo Film Co Ltd 光電変換素子及び撮像素子
JP4923434B2 (ja) * 2005-04-15 2012-04-25 ソニー株式会社 半導体装置、光学装置及びセンサ装置
JP2010098249A (ja) * 2008-10-20 2010-04-30 Fujifilm Corp 光電変換素子，光電変換素子の製造方法及び撮像素子

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2014208047A1 (ja) * 2013-06-24 2017-02-23 パナソニックＩｐマネジメント株式会社 固体撮像装置およびその製造方法
WO2014208047A1 (fr) * 2013-06-24 2014-12-31 パナソニックＩｐマネジメント株式会社 Dispositif de capture d'image à semi-conducteurs et son procédé de production
US9293489B2 (en) 2013-07-01 2016-03-22 Samsung Electronics Co., Ltd. CMOS image sensor
US9343492B2 (en) 2013-12-30 2016-05-17 Samsung Electronics Co., Ltd. CMOS image sensor based on thin-film on asic and operating method thereof
US9647018B2 (en) 2014-09-26 2017-05-09 Canon Kabushiki Kaisha Imaging device including an intermediate electrode between first and second pixel electrodes and in contact with a photoelectric conversion film
JP2017005196A (ja) * 2015-06-15 2017-01-05 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および固体撮像素子の製造方法、光電変換素子、撮像装置、電子機器、並びに光電変換素子。
US10531020B2 (en) 2015-11-18 2020-01-07 Sony Semiconductor Solutions Corporation Solid-state image pickup device, manufacturing method therefor, and electronic apparatus
WO2017086180A1 (fr) * 2015-11-18 2017-05-26 ソニー株式会社 Élément de prise de vues à semi-conducteurs, procédé de fabrication, et dispositif électronique
JPWO2017086180A1 (ja) * 2015-11-18 2018-08-30 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、製造方法、および電子機器
KR20190138370A (ko) * 2018-06-05 2019-12-13 삼성전자주식회사 이미지 센서 및 그 제조 방법
KR102560623B1 (ko) * 2018-06-05 2023-07-26 삼성전자주식회사 이미지 센서 및 그 제조 방법
WO2021054049A1 (fr) * 2019-09-19 2021-03-25 株式会社ジャパンディスプレイ Dispositif de détection
JP2021048299A (ja) * 2019-09-19 2021-03-25 株式会社ジャパンディスプレイ 検出装置
JP7362385B2 (ja) 2019-09-19 2023-10-17 株式会社ジャパンディスプレイ 検出装置
CN114530468A (zh) * 2021-11-19 2022-05-24 中芯热成科技(北京)有限责任公司 红外焦平面探测器及其制备方法
CN114530468B (zh) * 2021-11-19 2023-11-14 中芯热成科技(北京)有限责任公司 红外焦平面探测器及其制备方法

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WO2011148436A1 (fr) 2011-12-01

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