JP2011241397A5 - - Google Patents
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- Publication number
- JP2011241397A5 JP2011241397A5 JP2011108914A JP2011108914A JP2011241397A5 JP 2011241397 A5 JP2011241397 A5 JP 2011241397A5 JP 2011108914 A JP2011108914 A JP 2011108914A JP 2011108914 A JP2011108914 A JP 2011108914A JP 2011241397 A5 JP2011241397 A5 JP 2011241397A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- selenium
- complex
- component
- ink
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011669 selenium Substances 0.000 claims 26
- 229910052711 selenium Inorganic materials 0.000 claims 20
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims 19
- 125000003748 selenium group Chemical group *[Se]* 0.000 claims 16
- 150000004770 chalcogenides Chemical class 0.000 claims 14
- 239000007788 liquid Substances 0.000 claims 12
- 150000001412 amines Chemical class 0.000 claims 10
- 239000002904 solvent Substances 0.000 claims 10
- 239000000463 material Substances 0.000 claims 7
- 125000004433 nitrogen atom Chemical group N* 0.000 claims 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 6
- 125000005011 alkyl ether group Chemical group 0.000 claims 6
- 125000005013 aryl ether group Chemical group 0.000 claims 6
- 125000003118 aryl group Chemical group 0.000 claims 6
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims 6
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 claims 6
- 125000003837 (C1-C20) alkyl group Chemical group 0.000 claims 4
- PMNLUUOXGOOLSP-UHFFFAOYSA-N 2-mercaptopropanoic acid Chemical compound CC(S)C(O)=O PMNLUUOXGOOLSP-UHFFFAOYSA-N 0.000 claims 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 4
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 claims 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 4
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 claims 4
- 239000000654 additive Substances 0.000 claims 4
- 230000000996 additive effect Effects 0.000 claims 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims 4
- 229910052733 gallium Inorganic materials 0.000 claims 4
- 229910052738 indium Inorganic materials 0.000 claims 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 229910052717 sulfur Inorganic materials 0.000 claims 4
- 239000011593 sulfur Substances 0.000 claims 4
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 3
- 229910052739 hydrogen Inorganic materials 0.000 claims 3
- 239000003446 ligand Substances 0.000 claims 3
- 229910052714 tellurium Inorganic materials 0.000 claims 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 3
- 229910052716 thallium Inorganic materials 0.000 claims 3
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims 2
- WLHCBQAPPJAULW-UHFFFAOYSA-N 4-methylbenzenethiol Chemical group CC1=CC=C(S)C=C1 WLHCBQAPPJAULW-UHFFFAOYSA-N 0.000 claims 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 2
- 239000001273 butane Substances 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 125000004432 carbon atom Chemical group C* 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- CMKBCTPCXZNQKX-UHFFFAOYSA-N cyclohexanethiol Chemical compound SC1CCCCC1 CMKBCTPCXZNQKX-UHFFFAOYSA-N 0.000 claims 2
- 239000006185 dispersion Substances 0.000 claims 2
- 235000019253 formic acid Nutrition 0.000 claims 2
- QAMFBRUWYYMMGJ-UHFFFAOYSA-N hexafluoroacetylacetone Chemical group FC(F)(F)C(=O)CC(=O)C(F)(F)F QAMFBRUWYYMMGJ-UHFFFAOYSA-N 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 claims 2
- 239000002244 precipitate Substances 0.000 claims 2
- 235000019260 propionic acid Nutrition 0.000 claims 2
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims 2
- 238000003756 stirring Methods 0.000 claims 2
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical group NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 claims 2
- KYVBNYUBXIEUFW-UHFFFAOYSA-N 1,1,3,3-tetramethylguanidine Chemical compound CN(C)C(=N)N(C)C KYVBNYUBXIEUFW-UHFFFAOYSA-N 0.000 claims 1
- MCTWTZJPVLRJOU-UHFFFAOYSA-N 1-methyl-1H-imidazole Chemical compound CN1C=CN=C1 MCTWTZJPVLRJOU-UHFFFAOYSA-N 0.000 claims 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 claims 1
- OXQGTIUCKGYOAA-UHFFFAOYSA-N 2-Ethylbutanoic acid Chemical compound CCC(CC)C(O)=O OXQGTIUCKGYOAA-UHFFFAOYSA-N 0.000 claims 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 125000004429 atom Chemical group 0.000 claims 1
- 239000000969 carrier Substances 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims 1
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 claims 1
- MBYLVOKEDDQJDY-UHFFFAOYSA-N tris(2-aminoethyl)amine Chemical compound NCCN(CCN)CCN MBYLVOKEDDQJDY-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/782,081 US8119506B2 (en) | 2010-05-18 | 2010-05-18 | Group 6a/group 3a ink and methods of making and using same |
| US12/782081 | 2010-05-18 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011241397A JP2011241397A (ja) | 2011-12-01 |
| JP2011241397A5 true JP2011241397A5 (enExample) | 2014-06-26 |
| JP5702665B2 JP5702665B2 (ja) | 2015-04-15 |
Family
ID=44453950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011108914A Expired - Fee Related JP5702665B2 (ja) | 2010-05-18 | 2011-05-15 | 第６ａ族／第３ａ族インク、並びにその製造方法および使用方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8119506B2 (enExample) |
| EP (1) | EP2388301B1 (enExample) |
| JP (1) | JP5702665B2 (enExample) |
| KR (1) | KR101826097B1 (enExample) |
| CN (1) | CN102344714B (enExample) |
| TW (1) | TWI481675B (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG178227A1 (en) * | 2009-08-04 | 2012-03-29 | Precursor Energetics Inc | Polymeric precursors for cis and cigs photovoltaics |
| WO2011146115A1 (en) | 2010-05-21 | 2011-11-24 | Heliovolt Corporation | Liquid precursor for deposition of copper selenide and method of preparing the same |
| US9142408B2 (en) | 2010-08-16 | 2015-09-22 | Alliance For Sustainable Energy, Llc | Liquid precursor for deposition of indium selenide and method of preparing the same |
| KR20130143031A (ko) | 2010-09-15 | 2013-12-30 | 프리커서 에너제틱스, 인코퍼레이티드. | 광기전체를 위한 어닐링 방법 |
| US8282995B2 (en) * | 2010-09-30 | 2012-10-09 | Rohm And Haas Electronic Materials Llc | Selenium/group 1b/group 3a ink and methods of making and using same |
| KR20140053962A (ko) * | 2011-06-17 | 2014-05-08 | 프리커서 에너제틱스, 인코퍼레이티드. | 광기전체를 위한 침착 방법 |
| US9105797B2 (en) * | 2012-05-31 | 2015-08-11 | Alliance For Sustainable Energy, Llc | Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se |
| CN117865076B (zh) * | 2024-01-12 | 2024-11-29 | 昆明理工大学 | 一种大面积二维碱金属硫族化合物网络的制备方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993004212A1 (en) | 1991-08-26 | 1993-03-04 | Eastman Kodak Company | Preparation of group iii element-group vi element compound films |
| GB9315771D0 (en) | 1993-07-30 | 1993-09-15 | Epichem Ltd | Method of depositing thin metal films |
| US6126740A (en) | 1995-09-29 | 2000-10-03 | Midwest Research Institute | Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films |
| GB9711799D0 (en) | 1997-06-07 | 1997-08-06 | Vecht Aron | Preparation of sulphides and selenides |
| US6285251B1 (en) * | 1998-04-02 | 2001-09-04 | Ericsson Inc. | Amplification systems and methods using fixed and modulated power supply voltages and buck-boost control |
| JP2003020228A (ja) * | 2001-07-03 | 2003-01-24 | Fuji Photo Film Co Ltd | 金属または金属−カルコゲンナノ粒子の液相合成法およびこれを用いた相変化光記録媒体 |
| US7524528B2 (en) | 2001-10-05 | 2009-04-28 | Cabot Corporation | Precursor compositions and methods for the deposition of passive electrical components on a substrate |
| US6875661B2 (en) | 2003-07-10 | 2005-04-05 | International Business Machines Corporation | Solution deposition of chalcogenide films |
| US7663057B2 (en) | 2004-02-19 | 2010-02-16 | Nanosolar, Inc. | Solution-based fabrication of photovoltaic cell |
| US20070163641A1 (en) * | 2004-02-19 | 2007-07-19 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles |
| US8309163B2 (en) * | 2004-02-19 | 2012-11-13 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material |
| US20070166453A1 (en) * | 2004-02-19 | 2007-07-19 | Nanosolar, Inc. | High-throughput printing of chalcogen layer |
| US20070169811A1 (en) * | 2004-02-19 | 2007-07-26 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer by use of thermal and chemical gradients |
| US7494841B2 (en) | 2006-05-12 | 2009-02-24 | International Business Machines Corporation | Solution-based deposition process for metal chalcogenides |
| US8057850B2 (en) | 2006-11-09 | 2011-11-15 | Alliance For Sustainable Energy, Llc | Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors |
| EP2101931B1 (en) | 2006-11-09 | 2015-05-13 | Alliance for Sustainable Energy, LLC | Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films |
| WO2008095146A2 (en) | 2007-01-31 | 2008-08-07 | Van Duren Jeroen K J | Solar cell absorber layer formed from metal ion precursors |
| KR101030780B1 (ko) * | 2007-11-14 | 2011-04-27 | 성균관대학교산학협력단 | Ⅰ－ⅲ－ⅵ２ 나노입자의 제조방법 및 다결정 광흡수층박막의 제조방법 |
| US20090260670A1 (en) * | 2008-04-18 | 2009-10-22 | Xiao-Chang Charles Li | Precursor ink for producing IB-IIIA-VIA semiconductors |
| WO2010135622A1 (en) * | 2009-05-21 | 2010-11-25 | E. I. Du Pont De Nemours And Company | Copper zinc tin chalcogenide nanoparticles |
| US8277894B2 (en) * | 2009-07-16 | 2012-10-02 | Rohm And Haas Electronic Materials Llc | Selenium ink and methods of making and using same |
| US8308973B2 (en) * | 2009-07-27 | 2012-11-13 | Rohm And Haas Electronic Materials Llc | Dichalcogenide selenium ink and methods of making and using same |
| US8071875B2 (en) * | 2009-09-15 | 2011-12-06 | Xiao-Chang Charles Li | Manufacture of thin solar cells based on ink printing technology |
| US20110076798A1 (en) * | 2009-09-28 | 2011-03-31 | Rohm And Haas Electronic Materials Llc | Dichalcogenide ink containing selenium and methods of making and using same |
| US8309179B2 (en) * | 2009-09-28 | 2012-11-13 | Rohm And Haas Electronics Materials Llc | Selenium/group 1b ink and methods of making and using same |
-
2010
- 2010-05-18 US US12/782,081 patent/US8119506B2/en not_active Expired - Fee Related
-
2011
- 2011-05-15 JP JP2011108914A patent/JP5702665B2/ja not_active Expired - Fee Related
- 2011-05-17 TW TW100117161A patent/TWI481675B/zh not_active IP Right Cessation
- 2011-05-17 EP EP11166307.6A patent/EP2388301B1/en not_active Not-in-force
- 2011-05-18 KR KR1020110046911A patent/KR101826097B1/ko not_active Expired - Fee Related
- 2011-05-18 CN CN201110207774.8A patent/CN102344714B/zh not_active Expired - Fee Related
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