JP2011208151A - 接着シートの製造方法 - Google Patents
接着シートの製造方法 Download PDFInfo
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- JP2011208151A JP2011208151A JP2011126576A JP2011126576A JP2011208151A JP 2011208151 A JP2011208151 A JP 2011208151A JP 2011126576 A JP2011126576 A JP 2011126576A JP 2011126576 A JP2011126576 A JP 2011126576A JP 2011208151 A JP2011208151 A JP 2011208151A
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- ZNAAXKXXDQLJIX-UHFFFAOYSA-N bis(2-cyclohexyl-3-hydroxyphenyl)methanone Chemical compound C1CCCCC1C=1C(O)=CC=CC=1C(=O)C1=CC=CC(O)=C1C1CCCCC1 ZNAAXKXXDQLJIX-UHFFFAOYSA-N 0.000 description 1
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- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
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- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920003055 poly(ester-imide) Polymers 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
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- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
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- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
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- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Abstract
【解決手段】剥離基材1上に接着剤層2を積層する工程、接着剤層2に対し剥離基材1に達するまで切り込みを入れ、所定の平面形状の接着剤層2とその外方に配置される支持接着剤層22とを形成する工程、所定の平面形状の接着剤層2上に、該接着剤層2を覆い且つ該接着剤層2の周囲で剥離基材1に接するように粘着フィルム3を積層するとともに、支持接着剤層22上に、粘着フィルム3と同一組成であり且つ粘着フィルム3の膜厚と同等又はそれ以上の膜厚を有する支持粘着フィルム23を積層する工程、を含む接着シートの製造方法。
【選択図】図7
Description
以下、図面を参照しながら本発明の好適な実施形態について詳細に説明する。なお、以下の説明では、同一又は相当部分には同一符号を付し、重複する説明は省略する。また、上下左右等の位置関係は、特に断らない限り、図面に示す位置関係に基づくものとする。更に、図面の寸法比率は図示の比率に限られるものではない。
次に本発明の接着シートを製造する方法について説明する。
次に、本発明の接着シートを用いて半導体装置を製造する方法について、図9を用いて説明する。なお、以下の説明においては、接着シートとして図1に示した接着シート100を用いる場合について説明する。また、接着シート100において、粘着フィルム3は、粘着剤層と基材フィルムとが積層された構成を有していることとする。
図10は、上述した半導体装置の製造方法により製造される本発明の半導体装置の一実施形態を示す模式断面図である。
まず、エポキシ樹脂としてクレゾールノボラック型エポキシ樹脂(商品名:YDCN−703、東都化成(株)製、エポキシ当量:220)60質量部、及び、硬化剤として低吸水性フェノール樹脂(商品名:XLC−LL、三井化学(株)製、フェノールキシレングリコールジメチルエーテル縮合物)40質量部に、シクロヘキサノン1500質量部を加えて撹拌混合し、第1のワニスを調製した。次に、この第1のワニスに、カップリング剤としてγ−グリシドキシプロピルトリメトキシシラン(商品名:NUC A−189、日本ユニカー(株)製)1.5質量部、及び、γ−ウレイドプロピルトリエトキシシラン(商品名:NCU A−1160、日本ユニカー(株)製)3質量部を加え、更に無機物フィラーとしてシリカフィラー(商品名:R972V、日本アエロジル(株)製)32質量部を加えて撹拌混合した後、ビーズミルにより分散処理を行うことで第2のワニスを調製した。次に、この第2のワニスに、エポキシ基含有アクリル系共重合体(商品名:HTR−860P−3、帝国化学産業(株)製)200質量部、及び、硬化促進剤として1−シアノエチル−2−フェニルイミダゾール(商品名:キュアゾール2PZ−CN、四国化成(株)製)0.5質量部を加えて撹拌混合し、接着剤層形成用ワニスを調整した。
上記接着剤層形成用ワニスを、剥離基材である膜厚50μmのポリエチレンテレフタレートフィルム(商品名:テイジンピューレックスA31、帝人デュポンフィルム(株)製)上に塗布し、140℃で5分間加熱乾燥を行い、膜厚10μmのBステージ状態の接着剤層を形成した。
接着剤層の膜厚を25μmとした以外は実施例1と同様にして接着シートを得た。
接着剤層の膜厚を40μmとした以外は実施例1と同様にして接着シートを得た。
上記接着剤層形成用ワニスを、膜厚50μmのポリエチレンテレフタレートフィルム(商品名:テイジンピューレックスA31、帝人デュポンフィルム(株)製)上に塗布し、140℃で5分間加熱乾燥を行い、膜厚10μmのBステージ状態の接着剤層を形成した。
接着剤層の膜厚を25μmとした以外は実施例4と同様にして接着シートを得た。
接着剤層の膜厚を40μmとした以外は実施例5と同様にして接着シートを得た。
上記接着剤層形成用ワニスを、膜厚50μmのポリエチレンテレフタレートフィルム(商品名:テイジンピューレックスA31、帝人デュポンフィルム(株)製)上に塗布し、140℃で5分間加熱乾燥を行い、膜厚10μmのBステージ状態の接着剤層を形成した。
接着剤層の膜厚を25μmとした以外は比較例1と同様にして接着シートを得た。
接着剤層の膜厚を40μmとした以外は比較例1と同様にして接着シートを得た。
実施例1〜6及び比較例1〜3の接着シートを、円形形状の粘着フィルムの数が300枚になるように、巻き取り張力を1kg又は3kgとしてロール状に巻き取り、接着シートロールを作製した。得られた接着シートロールを2週間冷蔵庫内(5℃)で放置した。その後、接着シートロールを室温に戻してからロールを解き、150枚目のフィルムについて目視にて巻き跡の転写の有無を観察し、以下の評価基準に従って、○、△、×の3段階で接着シートの巻き跡の転写抑制性を評価した。その結果を表1に示す。
○:あらゆる角度から観察しても凹み(巻き跡の転写)を確認できない、
△:フィルム上面からは凹み(巻き跡の転写)が確認できないが、フィルムの角度を変え観察することで凹みが確認できる、
×:フィルム上面から観察し、フィルム上に凹み(巻き跡の転写)が確認できる。
Claims (7)
- 剥離基材上に接着剤層を積層する第1の積層工程と、
前記接着剤層の前記剥離基材に接する側と反対側の面から前記剥離基材に達するまで切り込みを入れ、所定の平面形状の接着剤層と、該接着剤層の外方に配置される支持接着剤層とを形成する第1の切断工程と、
前記所定の平面形状の接着剤層上に、該接着剤層を覆い、且つ、該接着剤層の周囲で前記剥離基材に接するように粘着フィルムを積層するとともに、前記支持接着剤層上に、前記粘着フィルムと同一組成であり、且つ、前記粘着フィルムの膜厚と同等又はそれ以上の膜厚を有する支持粘着フィルムを積層する第2の積層工程と、
を含むことを特徴とする接着シートの製造方法。 - 剥離基材上に接着剤層を積層する第1の積層工程と、
前記接着剤層の前記剥離基材に接する側と反対側の面から前記剥離基材に達するまで切り込みを入れ、所定の平面形状の接着剤層と、該接着剤層の外方に配置される支持接着剤層とを形成する第1の切断工程と、
前記所定の平面形状の接着剤層、前記支持接着剤層及び前記剥離基材を覆うように、粘着フィルムを積層する第3の積層工程と、
前記粘着フィルムの前記剥離基材側と反対側の面から前記剥離基材に達するまで切り込みを入れ、前記所定の平面形状の接着剤層を覆い、且つ、該接着剤層の周囲で前記剥離基材に接する前記粘着フィルムと、前記支持接着剤層上に配置される支持粘着フィルムとを形成する第2の切断工程と、
を含むことを特徴とする接着シートの製造方法。 - 前記支持粘着フィルムを、一部が前記剥離基材と接するように前記支持接着剤層上に積層することを特徴とする請求項1又は2記載の接着シートの製造方法。
- 前記剥離基材は長尺のものであり、前記支持接着剤層及び前記支持粘着フィルムを、少なくとも前記剥離基材の短手方向の両端部上に形成することを特徴とする請求項1〜3のうちのいずれか一項に記載の接着シートの製造方法。
- 前記接着剤層及び前記粘着フィルムの少なくとも一方を、円形形状あるいは前記剥離基材を剥離した後に前記接着剤層又は前記粘着フィルムを貼り付けるべき被着体の平面形状に合致する平面形状を有するものとすることを特徴とする請求項1〜4のうちのいずれか一項に記載の接着シートの製造方法。
- 前記接着剤層は、25℃での硬化前の貯蔵弾性率が10〜10000MPaであり、且つ、260℃での硬化後の貯蔵弾性率が0.5〜30MPaであるものであることを特徴とする請求項1〜5のうちのいずれか一項に記載の接着シートの製造方法。
- 前記粘着フィルムは、高エネルギー線の照射により、前記接着剤層に対する粘着力が低下するものであることを特徴とする請求項1〜6のうちのいずれか一項に記載の接着シートの製造方法。
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