JP2011187953A - シリコンおよびiii−v族のモノリシック集積デバイス - Google Patents
シリコンおよびiii−v族のモノリシック集積デバイス Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 109
- 239000010703 silicon Substances 0.000 title claims abstract description 109
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 108
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910002704 AlGaN Inorganic materials 0.000 abstract 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 50
- 229910002601 GaN Inorganic materials 0.000 description 49
- 238000004519 manufacturing process Methods 0.000 description 14
- 230000015556 catabolic process Effects 0.000 description 11
- 230000007704 transition Effects 0.000 description 10
- 230000003071 parasitic effect Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
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- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
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Abstract
【解決手段】少なくとも1つのビアは、III−V族半導体を通じて延在して、III−V族トランジスタの少なくとも1つの端子をシリコン基板に形成されたシリコンデバイスに結合させる。シリコンデバイスはショットキーダイオードと、III−V族トランジスタはGaNHEMTとすることができる。ショットキーダイオードのアノードは、一実施形態においては、シリコン基板202に形成され、他の実施形態においては、シリコン基板上の低濃度にドープされたエピタキシャルシリコン層204に形成される。HEMTはGANで構成されたチヤネル層212、AlGaNで構成された電子供給層214より構成される。
【選択図】図2B
Description
本出願では、「III−V族半導体」、「III−V族デバイス」またはこれに類する用語は、少なくとも1つのIII族元素および少なくとも1つのV族元素を有する化合物半導体を意味する。この化合物半導体は、これらに限定するものではないが、例えば、窒化ガリウム(gallium nitride: GaN)、ヒ化ガリウム(gallium arsenide: GaAs)、窒化インジウムアルミニウムガリウム(indium aluminum gallium nitride: InAlGaN)、窒化インジウムガリウム(indium gallium nitride: InGaN)等を有する化合物半導体である。同様に、「III族窒化物半導体」は、窒素および少なくとも1つのIII族元素を有する化合物半導体を意味し、これらに限定するものではないが、例えば、GaN、AlGaN、InN、AlN、InGaN、InAlGaN等である。
Claims (18)
- シリコン基板上のIII−V族半導体に形成されたIII−V族トランジスタと、
前記III−V半導体を通じて延在して、前記III−V族トランジスタの少なくとも1つの端子を前記シリコン基板に形成されるシリコンデバイスに結合させる少なくとも1つのビアと、
を備えるシリコンおよびIII−V族のモノリシック集積デバイス。 - 請求項1に記載のシリコンおよびIII−V族のモノリシック集積デバイスにおいて、前記シリコンデバイスは、ショットキーダイオードを備えることを特徴とするシリコンおよびIII−V族のモノリシック集積デバイス。
- 請求項1に記載のシリコンおよびIII−V族のモノリシック集積デバイスにおいて、前記シリコンデバイスはショットキーダイオードを備え、前記III−V族トランジスタはGaN HEMTであることを特徴とするシリコンおよびIII−V族のモノリシック集積デバイス。
- 請求項1に記載のシリコンおよびIII−V族のモノリシック集積デバイスにおいて、前記シリコンデバイスはショットキーダイオードを備え、前記III−V族トランジスタはGaN HEMTであり、前記ショットキーダイオードのアノードは前記シリコン基板に形成されることを特徴とするシリコンおよびIII−V族のモノリシック集積デバイス。
- 請求項4に記載のシリコンおよびIII−V族のモノリシック集積デバイスにおいて、前記ショットキーダイオードの前記アノードは、前記シリコン基板上の低濃度にドープされたエピタキシャルシリコン層に形成されたことを特徴とするシリコンおよびIII−V族のモノリシック集積デバイス。
- 請求項4に記載のシリコンおよびIII−V族のモノリシック集積デバイスにおいて、前記ショットキーダイオードの前記アノードは、白金およびアルミニウムからなる金属群から選択された金属を備えることを特徴とするシリコンおよびIII−V族のモノリシック集積デバイス。
- 請求項4に記載のシリコンおよびIII−V族のモノリシック集積デバイスにおいて、前記ショットキーダイオードの前記アノードは、アノードビアによって前記III−V族トランジスタのソース端子に導かれることを特徴とするシリコンおよびIII−V族のモノリシック集積デバイス。
- 請求項1に記載のシリコンおよびIII−V族のモノリシック集積デバイスにおいて、前記シリコンデバイスはショットキーダイオードを備え、前記III−V族トランジスタはGaN HEMTであり、さらに、前記ショットキーダイオードのカソードは前記シリコン基板に形成されることを特徴とするシリコンおよびIII−V族のモノリシック集積デバイス。
- 請求項8に記載のシリコンおよびIII−V族のモノリシック集積デバイスにおいて、前記ショットキーダイオードの前記カソードは、カソードビアによって前記III−V族トランジスタのドレイン端子に導かれることを特徴とするシリコンおよびIII−V族のモノリシック集積デバイス。
- 請求項2に記載のシリコンおよびIII−V族のモノリシック集積デバイスにおいて、前記ショットキーダイオードのカソードは、カソードビアによって前記III−V族トランジスタのドレイン端子に導かれ、前記ショットキーダイオードのアノードは、前記III−V族トランジスタのソース端子に結合し、これにより、前記III−V族トランジスタと前記ショットキーダイオードとの並列結合を形成することを特徴とするシリコンおよびIII−V族のモノリシック集積デバイス。
- 請求項2に記載のシリコンおよびIII−V族のモノリシック集積デバイスにおいて、前記ショットキーダイオードのカソードは、カソードビアによって前記III−V族トランジスタのソース端子に導かれ、前記ショットキーダイオードのアノードは、前記III−V族トランジスタのドレイン端子に結合せず、これにより、前記III−V族トランジスタと前記ショットキーダイオードとの直列結合を形成することを特徴とするシリコンおよびIII−V族のモノリシック集積デバイス。
- 請求項1に記載のシリコンおよびIII−V族のモノリシック集積デバイスにおいて、前記シリコンデバイスは、P−N接合ダイオードを備えることを特徴とするシリコンおよびIII−V族のモノリシック集積デバイス。
- シリコン基板に形成されたシリコンショットキーダイオードと、
前記シリコン基板上のIII−V族半導体に形成されたGaN HEMTと、
前記III−V族半導体を通じて延在して、前記GaN HEMTの第1端子を前記シリコンショットキーダイオードのアノードに結合するアノードビアと、
前記III−V族半導体を通じて延在して、前記GaN HEMTの第2端子を前記シリコンショットキーダイオードのカソードに結合するカソードビアと、
を備えるモノリシック集積デバイス。 - 請求項13に記載のモノリシック集積デバイスにおいて、前記ショットキーダイオードの前記アノードは、白金およびアルミニウムからなる金属群から選択された金属を備えることを特徴とするモノリシック集積デバイス。
- 請求項13のモノリシック集積デバイスにおいて、前記GaN HEMTの前記第1端子は、ソース端子であることを特徴とするモノリシック集積デバイス。
- 請求項13に記載のモノリシック集積デバイスにおいて、前記GaN HEMTの前記第2端子は、ドレイン端子であることを特徴とするモノリシック集積デバイス。
- 請求項13に記載のモノリシック集積デバイスにおいて、前記ショットキーダイオードと前記GaN HEMTとは、並列に結合することを特徴とするモノリシック集積デバイス。
- 請求項13に記載のモノリシック集積デバイスにおいて、前記ショットキーダイオードと前記GaN HEMTとは、直列に結合することを特徴とするモノリシック集積デバイス。
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US12/928,103 US8981380B2 (en) | 2010-03-01 | 2010-12-03 | Monolithic integration of silicon and group III-V devices |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110210337A1 (en) * | 2010-03-01 | 2011-09-01 | International Rectifier Corporation | Monolithic integration of silicon and group III-V devices |
JP2013197590A (ja) * | 2012-03-15 | 2013-09-30 | Internatl Rectifier Corp | Iii−v族及びiv族複合ダイオード |
US9219058B2 (en) | 2010-03-01 | 2015-12-22 | Infineon Technologies Americas Corp. | Efficient high voltage switching circuits and monolithic integration of same |
US9231093B2 (en) | 2012-07-20 | 2016-01-05 | Samsung Electronics Co., Ltd. | High electron mobility transistor and method of manufacturing the same |
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JP5567513B2 (ja) | 2014-08-06 |
EP2363880A3 (en) | 2014-01-22 |
US20110210337A1 (en) | 2011-09-01 |
US8981380B2 (en) | 2015-03-17 |
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