JP2011146807A - 高周波増幅器 - Google Patents
高周波増幅器 Download PDFInfo
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- JP2011146807A JP2011146807A JP2010004272A JP2010004272A JP2011146807A JP 2011146807 A JP2011146807 A JP 2011146807A JP 2010004272 A JP2010004272 A JP 2010004272A JP 2010004272 A JP2010004272 A JP 2010004272A JP 2011146807 A JP2011146807 A JP 2011146807A
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- package substrate
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
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- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
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- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
- H01L2223/6633—Transition between different waveguide types
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- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6644—Packaging aspects of high-frequency amplifiers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
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- H01L2924/1903—Structure including wave guides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1903—Structure including wave guides
- H01L2924/19038—Structure including wave guides being a hybrid line type
- H01L2924/19039—Structure including wave guides being a hybrid line type impedance transition between different types of wave guides
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- H—ELECTRICITY
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- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/1901—Structure
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- H01L2924/19042—Component type being an inductor
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
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- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/423—Amplifier output adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
Abstract
【解決手段】パッケージ基板と、該パッケージ基板の表面に設置された増幅能動素子と、該増幅能動素子と接続されて高周波信号を伝送する伝送線路とを有する。そして、一端が該伝送線路にシャント接続されたSMD部品と、該SMD部品の他端と接続され一部が該パッケージ基板の裏面に露出するSMD部品用端子と、該伝送線路のうち該増幅能動素子と接続された部分と反対側の端部と接続され、一部が該パッケージ基板の裏面に露出する外部端子とを備えたことを特徴とする。
【選択図】図1
Description
本実施形態は図1から図8を参照して説明する。なお、同一または対応する構成要素には同一の符号を付して複数回の説明を省略する場合がある。他の実施形態でも同様である。
本実施形態は図9ないし図12を参照して説明する。本実施形態の高周波増幅器はインダクタンス成分を変更することで増幅するべき周波数を変更するものである。図9に示すように伝送線路13は第一伝送線路15と第二伝送線路16を備える。第一伝送線路15のインダクタンスは第二伝送線路16のインダクタンスと異なる。第一伝送線路15はパッケージ基板11上に増幅能動素子12と直列に接続されるように形成される。第一伝送線路15は第一接続端子36に接続される。第一接続端子36はその一部がパッケージ基板11の裏面に露出する。
Claims (5)
- パッケージ基板と、
前記パッケージ基板の表面に設置された増幅能動素子と、
前記増幅能動素子と接続されて高周波信号を伝送する伝送線路と、
一端が前記伝送線路にシャント接続されたSMD部品と、
前記SMD部品の他端と接続され一部が前記パッケージ基板の裏面に露出するSMD部品用端子と、
前記伝送線路のうち前記増幅能動素子と接続された部分と反対側の端部と接続され、一部が前記パッケージ基板の裏面に露出する外部端子とを備えたことを特徴とする高周波増幅器。 - 前記SMD部品と前記SMD部品用端子のペアを複数備えたことを特徴とする請求項1に記載の高周波増幅器。
- 前記SMD部品用端子と前記外部端子とは隣接して配置されたことを特徴とする請求項1または2のいずれかに記載の高周波増幅器。
- パッケージ基板と、
前記パッケージ基板の表面に設置された増幅能動素子と、
前記パッケージ基板に前記増幅能動素子と直列に接続されるように形成された第一伝送線路と、
前記パッケージ基板に前記増幅能動素子と直列に接続されるように形成された第二伝送線路と、
前記第一伝送線路と接続され、一部が前記パッケージ基板の裏面に露出する第一接続端子と、
前記第二伝送線路と接続され、一部が前記パッケージ基板の裏面に露出する第二接続端子とを備えたことを特徴とする高周波増幅器。 - 前記第一接続端子と前記第二接続端子とは隣接して配置されたことを特徴とする請求項4に記載の高周波増幅器。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010004272A JP5381732B2 (ja) | 2010-01-12 | 2010-01-12 | 高周波増幅器 |
US12/873,344 US8085094B2 (en) | 2010-01-12 | 2010-09-01 | High frequency amplifier |
US13/303,955 US8174323B2 (en) | 2010-01-12 | 2011-11-23 | High frequency amplifier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010004272A JP5381732B2 (ja) | 2010-01-12 | 2010-01-12 | 高周波増幅器 |
Publications (2)
Publication Number | Publication Date |
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JP2011146807A true JP2011146807A (ja) | 2011-07-28 |
JP5381732B2 JP5381732B2 (ja) | 2014-01-08 |
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ID=44258096
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Application Number | Title | Priority Date | Filing Date |
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JP2010004272A Expired - Fee Related JP5381732B2 (ja) | 2010-01-12 | 2010-01-12 | 高周波増幅器 |
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US (2) | US8085094B2 (ja) |
JP (1) | JP5381732B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10003116B1 (en) * | 2017-03-29 | 2018-06-19 | Novatek Microelectronics Corp. | Electronic apparatus having coplanar waveguide transmission line |
WO2019017504A1 (ko) * | 2017-07-18 | 2019-01-24 | 이상훈 | 웨이퍼 레벨에서 온도 및 알에프 특성 모니터링이 가능한 알에프 파워 소자 |
US10673386B2 (en) * | 2017-12-05 | 2020-06-02 | Nxp Usa, Inc. | Wideband power amplifiers with harmonic traps |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10126173A (ja) * | 1996-10-18 | 1998-05-15 | Hitachi Denshi Ltd | 電力増幅器 |
JP2003068571A (ja) * | 2001-08-27 | 2003-03-07 | Nec Corp | 可変コンデンサおよび可変インダクタ並びにそれらを備えた高周波回路モジュール |
JP2005223473A (ja) * | 2004-02-04 | 2005-08-18 | Renesas Technology Corp | 高周波電力増幅モジュール、半導体集積回路装置、およびその製造方法 |
JP2006148268A (ja) * | 2004-11-17 | 2006-06-08 | Matsushita Electric Ind Co Ltd | 電力増幅モジュール |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09186533A (ja) | 1995-12-30 | 1997-07-15 | Sony Corp | 伝送装置 |
JP3811557B2 (ja) * | 1997-10-21 | 2006-08-23 | 松下電器産業株式会社 | 複数周波数帯域高効率線形電力増幅器 |
DE19757142A1 (de) * | 1997-12-20 | 1999-07-08 | Philips Patentverwaltung | Mobilfunkgerät |
JP2007096585A (ja) * | 2005-09-28 | 2007-04-12 | Renesas Technology Corp | 高周波電力増幅用電子部品 |
JP4843455B2 (ja) | 2006-10-30 | 2011-12-21 | 株式会社エヌ・ティ・ティ・ドコモ | 整合回路、マルチバンド増幅器 |
JP2009088770A (ja) * | 2007-09-28 | 2009-04-23 | Renesas Technology Corp | Rf増幅装置 |
-
2010
- 2010-01-12 JP JP2010004272A patent/JP5381732B2/ja not_active Expired - Fee Related
- 2010-09-01 US US12/873,344 patent/US8085094B2/en active Active
-
2011
- 2011-11-23 US US13/303,955 patent/US8174323B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10126173A (ja) * | 1996-10-18 | 1998-05-15 | Hitachi Denshi Ltd | 電力増幅器 |
JP2003068571A (ja) * | 2001-08-27 | 2003-03-07 | Nec Corp | 可変コンデンサおよび可変インダクタ並びにそれらを備えた高周波回路モジュール |
JP2005223473A (ja) * | 2004-02-04 | 2005-08-18 | Renesas Technology Corp | 高周波電力増幅モジュール、半導体集積回路装置、およびその製造方法 |
JP2006148268A (ja) * | 2004-11-17 | 2006-06-08 | Matsushita Electric Ind Co Ltd | 電力増幅モジュール |
Also Published As
Publication number | Publication date |
---|---|
US20110169576A1 (en) | 2011-07-14 |
US8085094B2 (en) | 2011-12-27 |
JP5381732B2 (ja) | 2014-01-08 |
US8174323B2 (en) | 2012-05-08 |
US20120068773A1 (en) | 2012-03-22 |
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