JP2011146506A5 - - Google Patents

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Publication number
JP2011146506A5
JP2011146506A5 JP2010005749A JP2010005749A JP2011146506A5 JP 2011146506 A5 JP2011146506 A5 JP 2011146506A5 JP 2010005749 A JP2010005749 A JP 2010005749A JP 2010005749 A JP2010005749 A JP 2010005749A JP 2011146506 A5 JP2011146506 A5 JP 2011146506A5
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JP
Japan
Prior art keywords
susceptor
vapor phase
phase growth
growth apparatus
glassy carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010005749A
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English (en)
Japanese (ja)
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JP2011146506A (ja
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Publication date
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Priority to JP2010005749A priority Critical patent/JP2011146506A/ja
Priority claimed from JP2010005749A external-priority patent/JP2011146506A/ja
Publication of JP2011146506A publication Critical patent/JP2011146506A/ja
Publication of JP2011146506A5 publication Critical patent/JP2011146506A5/ja
Pending legal-status Critical Current

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JP2010005749A 2010-01-14 2010-01-14 気相成長装置用サセプタ及び気相成長装置 Pending JP2011146506A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010005749A JP2011146506A (ja) 2010-01-14 2010-01-14 気相成長装置用サセプタ及び気相成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010005749A JP2011146506A (ja) 2010-01-14 2010-01-14 気相成長装置用サセプタ及び気相成長装置

Publications (2)

Publication Number Publication Date
JP2011146506A JP2011146506A (ja) 2011-07-28
JP2011146506A5 true JP2011146506A5 (enrdf_load_stackoverflow) 2013-02-28

Family

ID=44461108

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010005749A Pending JP2011146506A (ja) 2010-01-14 2010-01-14 気相成長装置用サセプタ及び気相成長装置

Country Status (1)

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JP (1) JP2011146506A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5928133B2 (ja) * 2012-04-27 2016-06-01 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
JP5880974B2 (ja) * 2013-02-25 2016-03-09 信越半導体株式会社 エピタキシャル成長装置の汚染検出方法及びエピタキシャルウェーハの製造方法
US9799548B2 (en) * 2013-03-15 2017-10-24 Applied Materials, Inc. Susceptors for enhanced process uniformity and reduced substrate slippage
JP6424726B2 (ja) 2015-04-27 2018-11-21 株式会社Sumco サセプタ及びエピタキシャル成長装置
TWI615917B (zh) * 2015-04-27 2018-02-21 Sumco股份有限公司 承托器及磊晶生長裝置
JP7233361B2 (ja) * 2017-05-12 2023-03-06 東洋炭素株式会社 サセプタ、エピタキシャル基板の製造方法、及びエピタキシャル基板
JP7220845B2 (ja) * 2019-04-18 2023-02-13 住友金属鉱山株式会社 サセプタ、サセプタの再生方法、及び、成膜方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2938926B2 (ja) * 1990-04-13 1999-08-25 東芝セラミツクス株式会社 炭化珪素質部材及びその製造方法
JPH092895A (ja) * 1995-06-15 1997-01-07 Toshiba Ceramics Co Ltd ガラス状カーボン製サセプタ
JP2002373930A (ja) * 2001-06-14 2002-12-26 Hitachi Chem Co Ltd サセプタ−
JP2003324106A (ja) * 2002-03-01 2003-11-14 Hitachi Kokusai Electric Inc 熱処理装置、半導体デバイスの製造方法及び基板の製造方法
JP4019998B2 (ja) * 2003-04-14 2007-12-12 信越半導体株式会社 サセプタ及び気相成長装置

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