TWI456687B - 藉由增加含矽材料的光學吸收性改良輻射加熱效能 - Google Patents

藉由增加含矽材料的光學吸收性改良輻射加熱效能 Download PDF

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Publication number
TWI456687B
TWI456687B TW100114709A TW100114709A TWI456687B TW I456687 B TWI456687 B TW I456687B TW 100114709 A TW100114709 A TW 100114709A TW 100114709 A TW100114709 A TW 100114709A TW I456687 B TWI456687 B TW I456687B
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TW
Taiwan
Prior art keywords
substrate carrier
absorbing layer
containing material
heat absorbing
heating efficiency
Prior art date
Application number
TW100114709A
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English (en)
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TW201203448A (en
Inventor
Hiroji Hanawa
Kyawwin Jason Maung
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Applied Materials Inc
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Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW201203448A publication Critical patent/TW201203448A/zh
Application granted granted Critical
Publication of TWI456687B publication Critical patent/TWI456687B/zh

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67115Apparatus for thermal treatment mainly by radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Surface Treatment Of Glass (AREA)

Claims (7)

  1. 一種使用在一半導體製程腔室中的基板載具,該基板載具包含:一主體,該主體具有一第一表面與一第二表面,該第一表面與該第二表面相對,且該第一表面被配置以支撐一或多個基板於該第一表面上;其中該主體包含一含碳材料,且其中該第二表面包含與該第二表面直接接觸的一熱吸收層,其中該熱吸收層包含碳化矽奈米結構。
  2. 如申請專利範圍第1項所述的基板載具,其中該熱吸收層包含一含氧化物材料。
  3. 如申請專利範圍第2項所述的基板載具,其中該含氧化物材料包含矽氧化物。
  4. 如申請專利範圍第2項所述的基板載具,其中該熱吸收層具有介於約15至約50微英吋的一表面粗糙度(Ra)。
  5. 如申請專利範圍第1項所述的基板載具,其中該熱吸收層具有介於約20至約40微英吋的一表面粗糙度(Ra)。
  6. 如申請專利範圍第1項所述的基板載具,其中該第二 表面具有介於約15至約50微英吋的一表面粗糙度(Ra)。
  7. 一種使用在一半導體製程腔室中的基板載具,該基板載具包含:一主體,該主體具有一第一表面與一第二表面,該第一表面與該第二表面相對,且該第一表面被配置以支撐一或多個基板於該第一表面上;其中該主體包含一含碳材料,該含碳材料包含碳化矽(SiC)或碳化矽(SiC)塗佈的石墨,且其中該第二表面包含與該第二表面直接接觸的一熱吸收層,其中該熱吸收層包含碳化矽奈米結構。
TW100114709A 2010-05-06 2011-04-27 藉由增加含矽材料的光學吸收性改良輻射加熱效能 TWI456687B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US33216210P 2010-05-06 2010-05-06
US13/093,584 US8455374B2 (en) 2010-05-06 2011-04-25 Radiation heating efficiency by increasing optical absorption of a silicon containing material

Publications (2)

Publication Number Publication Date
TW201203448A TW201203448A (en) 2012-01-16
TWI456687B true TWI456687B (zh) 2014-10-11

Family

ID=44901371

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100114709A TWI456687B (zh) 2010-05-06 2011-04-27 藉由增加含矽材料的光學吸收性改良輻射加熱效能

Country Status (3)

Country Link
US (1) US8455374B2 (zh)
TW (1) TWI456687B (zh)
WO (1) WO2011139640A2 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI484549B (zh) * 2013-02-08 2015-05-11 Sj High Technology Company 用於清潔半導體設備的零件之濕式清潔方法
SG11201508512PA (en) * 2013-05-23 2015-12-30 Applied Materials Inc A coated liner assembly for a semiconductor processing chamber
US9814099B2 (en) * 2013-08-02 2017-11-07 Applied Materials, Inc. Substrate support with surface feature for reduced reflection and manufacturing techniques for producing same
JP6989587B2 (ja) * 2016-07-09 2022-01-05 アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated 基板キャリア
US20200234991A1 (en) * 2019-01-21 2020-07-23 Applied Materials, Inc. Substrate carrier
KR102406942B1 (ko) * 2019-09-16 2022-06-10 에이피시스템 주식회사 엣지 링 및 이를 포함하는 열처리 장치

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010056561A (ja) * 2003-10-16 2010-03-11 Tokyo Electron Ltd 成膜装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6334404B1 (en) * 1999-05-19 2002-01-01 United Microelectronics Corp. Method and apparatus for reducing particle contamination on wafers
US6634882B2 (en) * 2000-12-22 2003-10-21 Asm America, Inc. Susceptor pocket profile to improve process performance
CN1682360B (zh) * 2002-09-27 2010-05-12 株式会社日立国际电气 热处理装置、半导体装置的制造方法及衬底的制造方法
JP2005174986A (ja) * 2003-12-08 2005-06-30 Matsushita Electric Ind Co Ltd 急速熱処理装置、その製造方法及び温度調整方法
US20060060145A1 (en) * 2004-09-17 2006-03-23 Van Den Berg Jannes R Susceptor with surface roughness for high temperature substrate processing
JP2009149964A (ja) * 2007-12-22 2009-07-09 Tokyo Electron Ltd 載置台構造及び熱処理装置
WO2010123463A1 (en) * 2009-04-23 2010-10-28 National University Of Singapore An apparatus that includes nano-sized projections and a method for manufacture thereof
WO2011031521A2 (en) * 2009-08-27 2011-03-17 Applied Materials, Inc. Method of decontamination of process chamber after in-situ chamber clean

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010056561A (ja) * 2003-10-16 2010-03-11 Tokyo Electron Ltd 成膜装置

Also Published As

Publication number Publication date
TW201203448A (en) 2012-01-16
WO2011139640A3 (en) 2012-03-01
US20110272709A1 (en) 2011-11-10
WO2011139640A2 (en) 2011-11-10
US8455374B2 (en) 2013-06-04

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