TWI456242B - 放射線檢測器 - Google Patents

放射線檢測器 Download PDF

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Publication number
TWI456242B
TWI456242B TW101103271A TW101103271A TWI456242B TW I456242 B TWI456242 B TW I456242B TW 101103271 A TW101103271 A TW 101103271A TW 101103271 A TW101103271 A TW 101103271A TW I456242 B TWI456242 B TW I456242B
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TW
Taiwan
Prior art keywords
layer
radiation detector
organic resin
fluorescent light
active area
Prior art date
Application number
TW101103271A
Other languages
English (en)
Other versions
TW201241466A (en
Inventor
Katsuhisa Homma
Original Assignee
Toshiba Kk
Toshiba Electron Tubes & Devic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk, Toshiba Electron Tubes & Devic filed Critical Toshiba Kk
Publication of TW201241466A publication Critical patent/TW201241466A/zh
Application granted granted Critical
Publication of TWI456242B publication Critical patent/TWI456242B/zh

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20188—Auxiliary details, e.g. casings or cooling
    • G01T1/20189—Damping or insulation against damage, e.g. caused by heat or pressure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/244—Auxiliary details, e.g. casings, cooling, damping or insulation against damage by, e.g. heat, pressure or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14663—Indirect radiation imagers, e.g. using luminescent members

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Molecular Biology (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Measurement Of Radiation (AREA)

Claims (6)

  1. 一種放射線檢測器，其特徵在於包括：基板，其至少被劃分為主動區域與接著區域，且包含位於上述主動區域內並將螢光轉換為電信號之光電轉換元件、位於上述主動區域內之最表層之有機樹脂保護層、及位於上述接著區域之最表層之無機保護膜；閃爍體層，其以覆蓋上述光電轉換元件之方式形成於上述有機樹脂保護層上並將放射線轉換為上述螢光；防濕體，其以覆蓋上述閃爍體層之方式形成；及接著層，其形成於上述無機保護層上並將上述防濕體與上述基板接著。
  2. 如請求項1之放射線檢測器，其中上述有機樹脂保護膜係由熱塑性有機樹脂所形成。
  3. 如請求項1或2之放射線檢測器，其中上述無機保護膜係由氮化矽、氧化矽、碳化矽及該等之複合材料中之任一種所形成。
  4. 如請求項1或2之放射線檢測器，其中上述接著層係由UV硬化型接著劑所形成。
  5. 如請求項3之放射線檢測器，其中上述接著層係由UV硬化型接著劑所形成。
  6. 如請求項1之放射線檢測器，其進而包括形成於上述閃爍體層與上述防濕體之間並反射上述螢光之反射膜。
TW101103271A 2011-02-01 2012-02-01 放射線檢測器 TWI456242B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011019432A JP5629593B2 (ja) 2011-02-01 2011-02-01 放射線検出器

Publications (2)

Publication Number Publication Date
TW201241466A TW201241466A (en) 2012-10-16
TWI456242B true TWI456242B (zh) 2014-10-11

Family

ID=46602412

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101103271A TWI456242B (zh) 2011-02-01 2012-02-01 放射線檢測器

Country Status (7)

Country Link
US (1) US8853808B2 (zh)
EP (1) EP2672292B1 (zh)
JP (1) JP5629593B2 (zh)
KR (1) KR20130114211A (zh)
CN (1) CN103348263B (zh)
TW (1) TWI456242B (zh)
WO (1) WO2012105185A1 (zh)

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JP2014071077A (ja) * 2012-10-01 2014-04-21 Canon Inc 放射線検出装置、及び、放射線検出システム
JP6074111B2 (ja) * 2014-03-28 2017-02-01 富士フイルム株式会社 放射線検出装置及び放射線検出装置の製造方法
JP6523620B2 (ja) * 2014-06-16 2019-06-05 キヤノン電子管デバイス株式会社 放射線検出器及びその製造方法
US9513380B2 (en) * 2014-07-25 2016-12-06 General Electric Company X-ray detectors supported on a substrate having a surrounding metal barrier
US10712454B2 (en) * 2014-07-25 2020-07-14 General Electric Company X-ray detectors supported on a substrate having a metal barrier
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JP6487263B2 (ja) * 2015-04-20 2019-03-20 浜松ホトニクス株式会社 放射線検出器及びその製造方法
US10497741B2 (en) * 2016-01-05 2019-12-03 Board Of Regents, The University Of Texas System Apparatus and methods for optical emission detection
US10481280B2 (en) * 2016-07-07 2019-11-19 Canon Kabushiki Kaisha Radiation detecting apparatus, radiation detecting system, and manufacturing method for radiation detecting apparatus
JP2018155699A (ja) * 2017-03-21 2018-10-04 コニカミノルタ株式会社 放射線検出器
US11287538B2 (en) * 2018-03-23 2022-03-29 Toray Industries, Inc. Scintillator panel, radiation detector, and method for manufacturing scintillator panel
CN110323235A (zh) * 2018-03-29 2019-10-11 夏普株式会社 摄像面板
JP2019174366A (ja) * 2018-03-29 2019-10-10 シャープ株式会社 撮像パネル
JP2019174365A (ja) * 2018-03-29 2019-10-10 シャープ株式会社 撮像パネル
WO2019244610A1 (ja) * 2018-06-22 2019-12-26 富士フイルム株式会社 放射線検出器及び放射線画像撮影装置
JP7240998B2 (ja) * 2018-11-13 2023-03-16 キヤノン電子管デバイス株式会社 放射線検出モジュール、放射線検出器、及び放射線検出モジュールの製造方法
KR20210128489A (ko) 2019-04-09 2021-10-26 야스 메디칼 이메이징 테크놀로지 가부시키가이샤 신틸레이터 모듈, 신틸레이터 센서 유닛 및 제조 방법
KR102666048B1 (ko) * 2019-05-29 2024-05-13 엘지디스플레이 주식회사 디지털 엑스레이 검출기와 이를 포함하는 디지털 엑스레이 검출 장치 및 이의 제조 방법
JP7325295B2 (ja) * 2019-10-24 2023-08-14 浜松ホトニクス株式会社 シンチレータパネル、放射線検出器、シンチレータパネルの製造方法、及び、放射線検出器の製造方法
US11804503B2 (en) * 2020-06-12 2023-10-31 Sharp Kabushiki Kaisha Photoelectric conversion device and x-ray imaging device
CN114023845B (zh) * 2020-07-17 2024-08-20 睿生光电股份有限公司 X射线装置及其制造方法

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Also Published As

Publication number Publication date
WO2012105185A1 (ja) 2012-08-09
TW201241466A (en) 2012-10-16
CN103348263A (zh) 2013-10-09
US8853808B2 (en) 2014-10-07
CN103348263B (zh) 2015-11-25
EP2672292A4 (en) 2014-11-05
US20130313667A1 (en) 2013-11-28
JP5629593B2 (ja) 2014-11-19
EP2672292B1 (en) 2018-02-28
JP2012159398A (ja) 2012-08-23
KR20130114211A (ko) 2013-10-16
EP2672292A1 (en) 2013-12-11

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