JP2011119773A - 光センサ、光センサを含む光センサ装置、及びこれを含むディスプレイ装置 - Google Patents
光センサ、光センサを含む光センサ装置、及びこれを含むディスプレイ装置 Download PDFInfo
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 38
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 38
- 239000010949 copper Substances 0.000 claims description 26
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- 229910052733 gallium Inorganic materials 0.000 claims description 17
- 229910052738 indium Inorganic materials 0.000 claims description 17
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- 229910052802 copper Inorganic materials 0.000 claims description 13
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 13
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 12
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052771 Terbium Inorganic materials 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910017052 cobalt Inorganic materials 0.000 claims description 12
- 239000010941 cobalt Substances 0.000 claims description 12
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 12
- 229910052746 lanthanum Inorganic materials 0.000 claims description 12
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 12
- 229910052748 manganese Inorganic materials 0.000 claims description 12
- 150000002739 metals Chemical class 0.000 claims description 12
- 229910052701 rubidium Inorganic materials 0.000 claims description 12
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 12
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 12
- 239000011701 zinc Substances 0.000 claims description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
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- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
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- 229910052779 Neodymium Inorganic materials 0.000 description 2
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- 229910052697 platinum Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】本発明は、光センサ、光センサ装置及びこれを含むディスプレイ装置に係り、基板と、基板上に備わって、酸化物を含む第1受光層と、第1受光層に接合され、有機物を含む第2受光層と、第1受光層及び第2受光層にそれぞれ接続する第1電極及び第2電極とを含む光センサ、これを含む光センサ装置及びディスプレイ装置を提供する。
【選択図】図1
Description
2 絶縁保護膜
10A,10B 光センサ
11 第1電極
13 第1受光層
15 第2受光層
17 第2電極
20A,20B センサ信号処理TFT
21,31 ゲート電極
22,32 ゲート絶縁膜
23,33 活性層
24,34 ソース電極及びドレイン電極
30A 画素部TFT
36 画素電極
110,120,130,140 光センサ装置
210 ディスプレイ装置
P 画素部
S センサ部
Claims (11)
- 基板上に形成された光センサと、前記光センサからセンサ信号を処理する少なくとも1つのセンサ信号処理TFTとを含む光センサ装置において、
前記光センサは、基板上に備わって酸化物を含む第1受光層と、前記第1受光層に接合されて有機物を含む第2受光層と、前記第1受光層及び第2受光層にそれぞれ接続する第1電極及び第2電極とを含み、
前記センサ信号処理TFTの活性層は、前記光センサの第1受光層と同一酸化物から形成されることを特徴とする光センサ装置。 - 前記光センサの第1受光層及びセンサ信号処理TFTの活性層は、ガリウム(Ga)、インジウム(In)、亜鉛(Zn)及びスズ(Sn)からなる群から選択された一つ以上の元素を含むことを特徴とする請求項1に記載の光センサ装置。
- 前記光センサの第2受光層を形成する有機物は、銅(Cu)、鉄(Fe)、ニッケル(Ni)、コバルト(Co)、マンガン(Mn)、アルミニウム(Al)、パラジウム(Pd)、スズ(Sn)、インジウム(In)、鉛(Pb)、チタン(Ti)、ルビジウム(Rb)、バナジウム(V)、ガリウム(Ga)、テルビウム(Tb)、セリウム(Ce)、ランタン(La)及び亜鉛(Zn)からなる群から選択された一つ以上の金属を含むフタロシアニン化合物であることを特徴とする請求項1に記載の光センサ装置。
- 前記光センサの第2受光層を形成する有機物は、銅(Cu)、鉄(Fe)、ニッケル(Ni)、コバルト(Co)、マンガン(Mn)、アルミニウム(Al)、パラジウム(Pd)、スズ(Sn)、インジウム(In)、鉛(Pb)、チタン(Ti)、ルビジウム(Rb)、バナジウム(V)、ガリウム(Ga)、テルビウム(Tb)、セリウム(Ce)、ランタン(La)及び亜鉛(Zn)からなる群から選択された一つ以上の金属を含むフタロシアニン化合物、及びC60をそれぞれ含む二層によって構成されることを特徴とする請求項1に記載の光センサ装置。
- 前記光センサの第2受光層を形成する有機物は、銅(Cu)、鉄(Fe)、ニッケル(Ni)、コバルト(Co)、マンガン(Mn)、アルミニウム(Al)、パラジウム(Pd)、スズ(Sn)、インジウム(In)、鉛(Pb)、チタン(Ti)、ルビジウム(Rb)、バナジウム(V)、ガリウム(Ga)、テルビウム(Tb)、セリウム(Ce)、ランタン(La)及び亜鉛(Zn)からなる群から選択された一つ以上の金属を含むフタロシアニン化合物、及びC60が混合された混合層によって構成されることを特徴とする請求項1に記載の光センサ装置。
- 前記センサ信号処理TFTは、基板上に、ゲート電極、ゲート絶縁膜、活性層、ソース電極及びドレイン電極の順に積層され、前記光センサは、前記基板上に、第1電極、第1受光層、第2受光層及び第2電極の順に積層され、
前記第1電極は、前記ゲート電極と同時に同一物質から形成され、前記第1受光層は、前記活性層と同時に形成され、前記第2電極は、前記ソース電極及びドレイン電極と同時に同一物質から形成されることを特徴とする請求項1に記載の光センサ装置。 - 前記センサ信号処理TFTは、基板上に、ゲート電極、ゲート絶縁膜、活性層、ソース電極及びドレイン電極の順に積層され、前記光センサは、前記基板上に、第1電極、第2受光層、第1受光層及び第2電極の順に積層され、
前記第1電極は、前記ゲート電極と同時に同一物質から形成され、前記第2受光層は、前記活性層と同時に形成され、前記第2電極は、前記ソース電極及びドレイン電極と同時に同一物質から形成されることを特徴とする請求項1に記載の光センサ装置。 - 前記センサ信号処理TFTは、基板上に、ソース電極及びドレイン電極、活性層、ゲート絶縁膜、及びゲート電極の順に積層され、前記光センサは、基板上に、第1電極、第1受光層、第2受光層及び第2電極の順に積層され、
前記第1電極は、前記ソース電極及びドレイン電極と同時に同一物質から形成され、前記第1受光層は、前記活性層と同時に形成され、前記第2電極は、前記ゲート電極と同時に同一物質から形成されることを特徴とする請求項1に記載の光センサ装置。 - 前記センサ信号処理TFTは、基板上に、ソース電極及びドレイン電極、活性層、ゲート絶縁膜、及びゲート電極の順に積層され、前記光センサは、基板上に、第1電極、第2受光層、第1受光層及び第2電極の順に積層され、
前記第1電極は、前記ソース電極及びドレイン電極と同時に同一物質から形成され、前記第2受光層は、前記活性層と同時に形成され、前記第2電極は、前記ゲート電極と同時に同一物質から形成されることを特徴とする請求項1に記載の光センサ装置。 - 光信号を感知して処理するセンサ部と、前記センサ部の信号処理によって画像具現に影響を受ける画素部とを具備したディスプレイ装置において、
前記センサ部は、基板上に備わって酸化物を含む第1受光層、前記第1受光層に接合されて有機物を含む第2受光層、及び前記第1受光層及び第2受光層にそれぞれ接続する第1電極及び第2電極を含む光センサと、
前記光センサからセンサ信号を処理し、前記光センサの第1受光層と同一物質から形成された活性層を具備したセンサ信号処理TFTとを含み、
前記画素部は、
前記センサ信号処理によって画素を駆動し、前記光センサの第1受光層と同一物質から形成された活性層を具備した画素部TFTと、
前記画素部TFTに電気的に接続され、画像を具現する複数個の画素とを含むディスプレイ装置。 - 前記画素部は、第1電極と第2電極との間に少なくとも有機発光層を具備した有機発光素子であることを特徴とする請求項10に記載のディスプレイ装置。
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KR1020090011227A KR101022651B1 (ko) | 2009-02-11 | 2009-02-11 | 광센서, 광센서를 포함하는 광센서 장치, 및 이를 포함하는디스플레이 장치 |
KR10-2009-0011227 | 2009-02-11 |
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JP2011055690A Active JP5247839B2 (ja) | 2009-02-11 | 2011-03-14 | 光センサ、光センサを含む光センサ装置、及びこれを含むディスプレイ装置 |
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US (1) | US8779480B2 (ja) |
EP (1) | EP2219223A3 (ja) |
JP (2) | JP2010186997A (ja) |
KR (1) | KR101022651B1 (ja) |
CN (1) | CN101800288A (ja) |
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EP2362421A1 (en) * | 2010-02-26 | 2011-08-31 | STMicroelectronics S.r.l. | Tailorable flexible sheet of monolithically fabricated array of separable cells each comprising a wholly organic, integrated circuit adapted to perform a specific function |
JP5392414B2 (ja) * | 2010-09-13 | 2014-01-22 | 株式会社村田製作所 | フォトダイオード、及び紫外線センサ |
US8962994B2 (en) * | 2010-10-22 | 2015-02-24 | Xerox Corporation | Photovoltaic device |
KR101793534B1 (ko) * | 2011-01-05 | 2017-11-06 | 삼성디스플레이 주식회사 | 포토센서 및 그의 제조방법 |
KR101854187B1 (ko) | 2011-07-28 | 2018-05-08 | 삼성전자주식회사 | 광센싱 장치 및 그 구동 방법, 광센싱 장치를 포함하는 광터치 스크린 장치 |
TWI445168B (zh) * | 2011-11-16 | 2014-07-11 | E Ink Holdings Inc | 光感測元件 |
JP5360270B2 (ja) | 2011-12-07 | 2013-12-04 | 凸版印刷株式会社 | 液晶表示装置 |
KR101920848B1 (ko) * | 2012-09-13 | 2018-11-22 | 삼성전자주식회사 | 유기 광전 소자 및 이미지 센서 |
DE102012222463A1 (de) * | 2012-12-06 | 2014-06-12 | Osram Opto Semiconductors Gmbh | Organisches optoelektronisches Bauelement mit Infrarot-Detektor |
TWI498791B (zh) | 2012-12-27 | 2015-09-01 | Toppan Printing Co Ltd | 液晶顯示裝置、彩色濾光片基板及彩色濾光片基板之製造方法 |
WO2014115367A1 (ja) | 2013-01-25 | 2014-07-31 | 凸版印刷株式会社 | カラーフィルタ基板、液晶表示装置、及びカラーフィルタ基板の製造方法 |
KR102153131B1 (ko) | 2014-02-26 | 2020-09-08 | 삼성디스플레이 주식회사 | 화소 및 이를 포함하는 유기 전계 발광 표시 장치 |
CN104900653B (zh) * | 2015-04-14 | 2017-12-29 | 深圳市华星光电技术有限公司 | Tft布局结构 |
CN112002810B (zh) * | 2015-05-29 | 2024-03-22 | 索尼半导体解决方案公司 | 光电转换元件和固体摄像装置 |
KR102650999B1 (ko) * | 2016-11-02 | 2024-03-22 | 엘지디스플레이 주식회사 | 압력 터치 센서 일체형 유기 발광 표시 장치 |
CN107293553B (zh) * | 2017-06-19 | 2020-11-24 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示面板和显示装置 |
US10840276B2 (en) * | 2018-10-08 | 2020-11-17 | Hkc Corporation Limited Chongqing Hkc Optoelectronics Technology Co., Ltd. | Display panel and method for manufacturing the same |
CN110703949B (zh) * | 2019-10-10 | 2022-05-13 | 业成科技(成都)有限公司 | 绝缘胶保护的改良结构 |
US10957248B1 (en) * | 2020-04-12 | 2021-03-23 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel and mobile terminal |
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Also Published As
Publication number | Publication date |
---|---|
US8779480B2 (en) | 2014-07-15 |
KR101022651B1 (ko) | 2011-03-22 |
CN101800288A (zh) | 2010-08-11 |
JP5247839B2 (ja) | 2013-07-24 |
EP2219223A2 (en) | 2010-08-18 |
EP2219223A3 (en) | 2013-04-17 |
KR20100091852A (ko) | 2010-08-19 |
JP2010186997A (ja) | 2010-08-26 |
US20100201664A1 (en) | 2010-08-12 |
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