JP2011079733A - 製造装置および製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 118
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 238000010438 heat treatment Methods 0.000 claims abstract description 61
- 239000012298 atmosphere Substances 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 37
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000001301 oxygen Substances 0.000 claims abstract description 31
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 31
- 239000002994 raw material Substances 0.000 claims abstract description 23
- 238000002425 crystallisation Methods 0.000 claims abstract description 10
- 230000008025 crystallization Effects 0.000 claims abstract description 10
- 239000002131 composite material Substances 0.000 claims abstract description 9
- 238000000137 annealing Methods 0.000 claims description 22
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 68
- 239000010409 thin film Substances 0.000 description 44
- 239000007789 gas Substances 0.000 description 38
- 239000000463 material Substances 0.000 description 20
- 230000010287 polarization Effects 0.000 description 17
- 239000013078 crystal Substances 0.000 description 16
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 230000005684 electric field Effects 0.000 description 8
- 238000004151 rapid thermal annealing Methods 0.000 description 7
- 239000012528 membrane Substances 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 206010021143 Hypoxia Diseases 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 2
- 230000005621 ferroelectricity Effects 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- -1 PZT and PLZT Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 238000000089 atomic force micrograph Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- RZEADQZDBXGRSM-UHFFFAOYSA-N bismuth lanthanum Chemical compound [La].[Bi] RZEADQZDBXGRSM-UHFFFAOYSA-N 0.000 description 1
- 229910002115 bismuth titanate Inorganic materials 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1279—Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
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Abstract
【解決手段】誘電体膜を有する基板を製造する製造装置であって、複合酸化物を含む原材料体が塗布された基板を、大気圧以上の圧力に加圧した、体積比20%以上の酸素を含む雰囲気中で熱処理して結晶化させる熱処理装置を備える製造装置および製造方法を提供する。当該製造装置は、光制御デバイスとして用いられる強誘電体膜を有する基板を製造してもよい。熱処理装置は、原材料が塗布された基板を雰囲気中に保持するチャンバと、熱処理中における予め定められた期間の間、チャンバ内の雰囲気の圧力を予め定められた圧力に調整する圧力調整部と、を有してもよい。
【選択図】図1
Description
特許文献1 特開2004−207304号公報
特許文献2 特開昭63−202910号公報
特許文献3 特開2004−131812号公報
特許文献4 特開2006−154145号公報
非特許文献1 Takashi Mihara, et. al., "Polarization Fatigue Characteristics of Sol-Gel Ferroelectric Pb(Zr0.4Ti0.6)O3 Thin-Film Capacitors", Japanese Journal of Applied Physics, Japan, July 1994, Vol.33, Part1 No.7A, pp.3996-4002
非特許文献2 Taisuke Furukawa, et. al., "Fatigueless Ferroelectric Capacitors with Ruthenium Bottom and Top Electrodes Formed by Metalorganic Chemical Vapor Deposition", Japanese Journal of Applied Physics, Japan, March 2005, Vol.44, No.12, pp.L378-L380
Claims (13)
- 誘電体膜を有する基板を製造する製造装置であって、
複合酸化物を含む原材料体が塗布された基板を、大気圧以上の圧力に加圧した、体積比20%以上の酸素を含む雰囲気中で熱処理して結晶化させる熱処理装置
を備える製造装置。 - 当該製造装置は、光制御デバイスとして用いられる強誘電体膜を有する基板を製造する請求項1に記載の製造装置。
- 前記熱処理装置は、
前記原材料が塗布された基板を前記雰囲気中に保持するチャンバと、
熱処理中における予め定められた期間の間、前記チャンバ内の前記雰囲気の圧力を予め定められた圧力に調整する圧力調整部と、
を有する請求項1または2に記載の製造装置。 - 前記圧力調整部は、
前記チャンバ内の気圧を測定する圧力センサと、
前記圧力センサにより測定した気圧に応じて、前記チャンバから排出する前記雰囲気の量を調整する圧力制御部と、
を含む請求項3に記載の製造装置。 - 前記圧力制御部は、前記圧力センサにより測定した気圧に応じて、前記チャンバに導入する前記雰囲気の量を更に調整する請求項4に記載の製造装置。
- 前記熱処理装置は、前記チャンバ内の前記雰囲気の圧力を前記予め定められた圧力に調整した状態で、前記チャンバ内の温度を前記誘電体膜が結晶化する温度まで上昇させる請求項3から5のいずれかに記載の製造装置。
- 前記熱処理装置は、前記チャンバ内の前記雰囲気の圧力を前記予め定められた圧力に調整した状態で、前記チャンバ内の温度を、前記誘電体膜が結晶化する温度まで1秒当たり1〜15℃の昇温速度で上昇させる請求項3から6のいずれかに記載の製造装置。
- 前記熱処理装置は、ランプアニールにより前記原材料が塗布された基板を熱処理する請求項1から7のいずれかに記載の製造装置。
- 前記熱処理装置は、前記熱処理装置によって結晶化された誘電体膜を有する基板上に前記原材料を塗布して、前記雰囲気中で熱処理して結晶化させる処理を、複数回繰り返す
請求項1から8のいずれかに記載の製造装置。 - 前記原材料の塗布および結晶化の繰り返しにより成膜された前記誘電体膜上に電極を生成する電極生成装置と、
電極が生成された前記誘電体膜を有する基板をアニールするアニール装置と、
を備える請求項9に記載の製造装置。 - 前記アニール装置は、電極が生成された前記誘電体膜を有する基板を、大気圧以上の圧力に加圧した、体積比20%以上の酸素を含む雰囲気中で加熱してアニールする請求項10に記載の製造装置。
- 前記原材料体は、Pb、Ba、および、Biのうちの少なくとも1つを含むゾルゲル原料である請求項1から11のいずれかに記載の製造装置。
- 誘電体膜を有する基板を製造する製造方法であって、
複合酸化物を含む原材料体を基板に塗布し、
前記原材料体が塗布された基板を、大気圧以上の圧力に加圧した、体積比20%以上の酸素を含む雰囲気中で熱処理して結晶化させる熱処理段階
を備える製造方法。
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US12/574,635 US20110081137A1 (en) | 2009-10-06 | 2009-10-06 | Manufacturing equipment and manufacturing method |
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Cited By (4)
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WO2012165263A1 (ja) * | 2011-06-03 | 2012-12-06 | 東京エレクトロン株式会社 | ゲート絶縁膜の形成方法およびゲート絶縁膜の形成装置 |
WO2015045845A1 (ja) * | 2013-09-24 | 2015-04-02 | コニカミノルタ株式会社 | 圧電アクチュエータ、インクジェットヘッド、インクジェットプリンタおよび圧電アクチュエータの製造方法 |
JP2016032007A (ja) * | 2014-07-28 | 2016-03-07 | 株式会社リコー | 圧電膜の製造方法、圧電素子の製造方法、液体吐出ヘッド及び画像形成装置 |
JP2021515266A (ja) * | 2018-02-22 | 2021-06-17 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | より優れた膜品質を可能にするためにマスク基板を処理する方法 |
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EP2688116B1 (en) * | 2011-03-15 | 2016-06-08 | Konica Minolta, Inc. | Ferroelectric thin film and method for producing same |
US10770309B2 (en) | 2015-12-30 | 2020-09-08 | Mattson Technology, Inc. | Features for improving process uniformity in a millisecond anneal system |
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JPWO2015045845A1 (ja) * | 2013-09-24 | 2017-03-09 | コニカミノルタ株式会社 | 圧電アクチュエータ、インクジェットヘッド、インクジェットプリンタおよび圧電アクチュエータの製造方法 |
JP2016032007A (ja) * | 2014-07-28 | 2016-03-07 | 株式会社リコー | 圧電膜の製造方法、圧電素子の製造方法、液体吐出ヘッド及び画像形成装置 |
JP2021515266A (ja) * | 2018-02-22 | 2021-06-17 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | より優れた膜品質を可能にするためにマスク基板を処理する方法 |
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