JP2011063849A - 成膜方法および記憶媒体 - Google Patents

成膜方法および記憶媒体 Download PDF

Info

Publication number
JP2011063849A
JP2011063849A JP2009215415A JP2009215415A JP2011063849A JP 2011063849 A JP2011063849 A JP 2011063849A JP 2009215415 A JP2009215415 A JP 2009215415A JP 2009215415 A JP2009215415 A JP 2009215415A JP 2011063849 A JP2011063849 A JP 2011063849A
Authority
JP
Japan
Prior art keywords
film
plating solution
substrate
plating
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2009215415A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011063849A5 (https=
Inventor
Yasuhiko Kojima
康彦 小島
Shuji Shinonome
秀司 東雲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2009215415A priority Critical patent/JP2011063849A/ja
Priority to US13/054,331 priority patent/US20110174630A1/en
Priority to KR1020107026850A priority patent/KR20110056455A/ko
Priority to PCT/JP2010/064572 priority patent/WO2011033916A1/ja
Priority to TW099131353A priority patent/TW201124564A/zh
Publication of JP2011063849A publication Critical patent/JP2011063849A/ja
Publication of JP2011063849A5 publication Critical patent/JP2011063849A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34—Pretreatment of metallic surfaces to be electroplated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/04—Electroplating with moving electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Automation & Control Theory (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroplating Methods And Accessories (AREA)
JP2009215415A 2009-09-17 2009-09-17 成膜方法および記憶媒体 Withdrawn JP2011063849A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009215415A JP2011063849A (ja) 2009-09-17 2009-09-17 成膜方法および記憶媒体
US13/054,331 US20110174630A1 (en) 2009-09-17 2010-08-27 Film formation method and storage medium
KR1020107026850A KR20110056455A (ko) 2009-09-17 2010-08-27 성막 방법 및 기억 매체
PCT/JP2010/064572 WO2011033916A1 (ja) 2009-09-17 2010-08-27 成膜方法および記憶媒体
TW099131353A TW201124564A (en) 2009-09-17 2010-09-16 Film-forming method and storage medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009215415A JP2011063849A (ja) 2009-09-17 2009-09-17 成膜方法および記憶媒体

Publications (2)

Publication Number Publication Date
JP2011063849A true JP2011063849A (ja) 2011-03-31
JP2011063849A5 JP2011063849A5 (https=) 2011-05-19

Family

ID=43758525

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009215415A Withdrawn JP2011063849A (ja) 2009-09-17 2009-09-17 成膜方法および記憶媒体

Country Status (5)

Country Link
US (1) US20110174630A1 (https=)
JP (1) JP2011063849A (https=)
KR (1) KR20110056455A (https=)
TW (1) TW201124564A (https=)
WO (1) WO2011033916A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011063848A (ja) * 2009-09-17 2011-03-31 Tokyo Electron Ltd 成膜方法および記憶媒体
JP2014111831A (ja) * 2012-11-27 2014-06-19 Lam Research Corporation 電気めっき中の動的な電流分布制御のための方法および装置
US10017869B2 (en) 2008-11-07 2018-07-10 Novellus Systems, Inc. Electroplating apparatus for tailored uniformity profile

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5659041B2 (ja) * 2011-02-24 2015-01-28 東京エレクトロン株式会社 成膜方法および記憶媒体
JP6678490B2 (ja) * 2016-03-28 2020-04-08 株式会社荏原製作所 めっき方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3856986B2 (ja) * 1999-06-15 2006-12-13 大日本スクリーン製造株式会社 基板メッキ装置
JP3984767B2 (ja) * 1999-10-25 2007-10-03 株式会社日立製作所 めっき装置
US20050006245A1 (en) * 2003-07-08 2005-01-13 Applied Materials, Inc. Multiple-step electrodeposition process for direct copper plating on barrier metals
US20040245107A1 (en) * 2003-06-03 2004-12-09 Guangli Che Method for improving electroplating in sub-0.1um interconnects by adjusting immersion conditions
US7344972B2 (en) * 2004-04-21 2008-03-18 Intel Corporation Photosensitive dielectric layer
JP2008007830A (ja) * 2006-06-30 2008-01-17 Fujitsu Ltd めっき方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10017869B2 (en) 2008-11-07 2018-07-10 Novellus Systems, Inc. Electroplating apparatus for tailored uniformity profile
US10920335B2 (en) 2008-11-07 2021-02-16 Novellus Systems, Inc. Electroplating apparatus for tailored uniformity profile
US11549192B2 (en) 2008-11-07 2023-01-10 Novellus Systems, Inc. Electroplating apparatus for tailored uniformity profile
JP2011063848A (ja) * 2009-09-17 2011-03-31 Tokyo Electron Ltd 成膜方法および記憶媒体
JP2014111831A (ja) * 2012-11-27 2014-06-19 Lam Research Corporation 電気めっき中の動的な電流分布制御のための方法および装置
US9909228B2 (en) 2012-11-27 2018-03-06 Lam Research Corporation Method and apparatus for dynamic current distribution control during electroplating

Also Published As

Publication number Publication date
TW201124564A (en) 2011-07-16
WO2011033916A1 (ja) 2011-03-24
US20110174630A1 (en) 2011-07-21
KR20110056455A (ko) 2011-05-30

Similar Documents

Publication Publication Date Title
TWI404822B (zh) Film forming method and memory media (2)
US8377824B1 (en) Methods and apparatus for depositing copper on tungsten
US9536745B2 (en) Tungsten film forming method
TW201630036A (zh) 用以描繪金屬氧化物還原的方法及設備
WO2004067799A1 (ja) 半導体処理用の載置台装置、成膜装置、及び成膜方法
TW201447018A (zh) 金屬晶種層上之金屬氧化物的還原方法與設備
JP5208756B2 (ja) Ｔｉ系膜の成膜方法および記憶媒体
JP6770988B2 (ja) 基板処理装置および半導体装置の製造方法
JP6268008B2 (ja) Ｃｕ配線の製造方法
WO2008041670A1 (en) Apparatus for manufacturing semiconductor, method for manufacturing semiconductor device, storage medium, and computer program
JP2011063849A (ja) 成膜方法および記憶媒体
CN114051542A (zh) 半导体设备制造中在金属电沉积期间的晶种层的保护
US20150072538A1 (en) Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer
JP2010065309A (ja) Ｔｉ系膜の成膜方法および記憶媒体
US8906808B2 (en) Etching method
US20090325393A1 (en) Heat treatment method and heat treatment apparatus
JP2007043038A (ja) 金属膜の成膜方法、成膜装置及び記憶媒体
JP7564957B2 (ja) 基板処理方法及び基板処理装置
JP2016174141A (ja) Ｃｕ配線の製造方法
US8721846B2 (en) Method of forming film, film forming apparatus and storage medium
WO2008051359A1 (en) Apparatus and method for substrate electroless plating
JP2010212452A (ja) Ｃｕ膜の成膜方法および記憶媒体
JP2012174845A (ja) 成膜方法及び半導体装置の製造方法
WO2010103881A1 (ja) Ｃｕ膜の成膜方法および記憶媒体
WO2010095498A1 (ja) Ｃｕ膜の成膜方法および記憶媒体

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110405

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110405

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20120824