JP2011044492A - レーザモジュール - Google Patents
レーザモジュール Download PDFInfo
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- JP2011044492A JP2011044492A JP2009190329A JP2009190329A JP2011044492A JP 2011044492 A JP2011044492 A JP 2011044492A JP 2009190329 A JP2009190329 A JP 2009190329A JP 2009190329 A JP2009190329 A JP 2009190329A JP 2011044492 A JP2011044492 A JP 2011044492A
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- quantum cascade
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- cascade laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
- H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094049—Guiding of the pump light
- H01S3/094057—Guiding of the pump light by tapered duct or homogenized light pipe, e.g. for concentrating pump light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Semiconductor Lasers (AREA)
Abstract
【解決手段】レーザモジュールLMは、量子カスケードレーザ1と、管状部材5と、赤外線検出器7と、を備えている。管状部材5は、一対の開口端5a,5bを有し、一方の開口端5aが量子カスケードレーザ1の出射端面1aと対向する面1bに対向するように配置されている。赤外線検出器7は、管状部材5の他方の開口端5bと対向するように配置されている。量子カスケードレーザ1の出射端面(前側端面)1aと対向する面(後側端面)1bから放射された光は、管状部材5の内側を導波し、赤外線検出器7に入射して、検出される。
【選択図】図1
Description
Claims (5)
- 量子カスケードレーザと、
一対の開口端を有し、一方の開口端が前記量子カスケードレーザの出射端面と対向する面に対向するように配置された管状部材と、
前記管状部材の他方の開口端と対向するように配置された赤外線検出器と、を備えることを特徴とするレーザモジュール。 - 前記管状部材は、その断面積が1.23〜2.24mm2に設定されていることを特徴とする請求項1に記載のレーザモジュール。
- 前記管状部材は、円筒形状を呈しており、内径が1.25〜1.69mmに設定されていることを特徴とする請求項2に記載のレーザモジュール。
- 前記管状部材は、14ゲージ〜16ゲージの中空の針であることを特徴とする請求項1に記載のレーザモジュール。
- 前記管状部材は、ステンレス鋼からなることを特徴とする請求項1〜4のいずれか一項に記載のレーザモジュール。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009190329A JP5350940B2 (ja) | 2009-08-19 | 2009-08-19 | レーザモジュール |
DE112010003310T DE112010003310T5 (de) | 2009-08-19 | 2010-05-21 | Lasermodul |
US13/256,657 US8675702B2 (en) | 2009-08-19 | 2010-05-21 | Laser module |
PCT/JP2010/058660 WO2011021417A1 (ja) | 2009-08-19 | 2010-05-21 | レーザモジュール |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009190329A JP5350940B2 (ja) | 2009-08-19 | 2009-08-19 | レーザモジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011044492A true JP2011044492A (ja) | 2011-03-03 |
JP5350940B2 JP5350940B2 (ja) | 2013-11-27 |
Family
ID=43606875
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009190329A Active JP5350940B2 (ja) | 2009-08-19 | 2009-08-19 | レーザモジュール |
Country Status (4)
Country | Link |
---|---|
US (1) | US8675702B2 (ja) |
JP (1) | JP5350940B2 (ja) |
DE (1) | DE112010003310T5 (ja) |
WO (1) | WO2011021417A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013222809A (ja) * | 2012-04-16 | 2013-10-28 | Hamamatsu Photonics Kk | 半導体レーザ装置 |
JP2015515606A (ja) * | 2012-02-22 | 2015-05-28 | アイティーアイ・スコットランド・リミテッド | ヘテロダイン検波システムおよび方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5810720B2 (ja) * | 2011-08-01 | 2015-11-11 | 住友電気工業株式会社 | 量子カスケード半導体レーザ、レーザ装置および量子カスケード半導体レーザの製造方法 |
JP6965545B2 (ja) * | 2017-03-30 | 2021-11-10 | 住友電気工業株式会社 | 光半導体装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004253782A (ja) * | 2003-01-30 | 2004-09-09 | Sun Tec Kk | 外部共振器型レーザモジュール |
JP2008543101A (ja) * | 2005-06-10 | 2008-11-27 | テールズ | 超低雑音半導体レーザ |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5509025A (en) | 1994-04-04 | 1996-04-16 | At&T Corp. | Unipolar semiconductor laser |
JP4440571B2 (ja) | 2003-07-14 | 2010-03-24 | 浜松ホトニクス株式会社 | 量子カスケードレーザ |
JP4494721B2 (ja) | 2003-02-13 | 2010-06-30 | 浜松ホトニクス株式会社 | 量子カスケードレーザ |
US20070116077A1 (en) * | 2005-11-22 | 2007-05-24 | Nlight Photonics Corporation | Vertically displaced stack of multi-mode single emitter laser diodes |
US7505496B2 (en) * | 2006-04-05 | 2009-03-17 | Ciena Corporation | Systems and methods for real-time compensation for non-linearity in optical sources for analog signal transmission |
US7531803B2 (en) * | 2006-07-14 | 2009-05-12 | William Marsh Rice University | Method and system for transmitting terahertz pulses |
JP5641667B2 (ja) | 2007-01-18 | 2014-12-17 | 浜松ホトニクス株式会社 | 量子カスケードレーザ |
US8619832B2 (en) * | 2008-05-08 | 2013-12-31 | Massachusetts Institute Of Technology | Lens coupled quantum cascade laser |
-
2009
- 2009-08-19 JP JP2009190329A patent/JP5350940B2/ja active Active
-
2010
- 2010-05-21 DE DE112010003310T patent/DE112010003310T5/de not_active Withdrawn
- 2010-05-21 WO PCT/JP2010/058660 patent/WO2011021417A1/ja active Application Filing
- 2010-05-21 US US13/256,657 patent/US8675702B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004253782A (ja) * | 2003-01-30 | 2004-09-09 | Sun Tec Kk | 外部共振器型レーザモジュール |
JP2008543101A (ja) * | 2005-06-10 | 2008-11-27 | テールズ | 超低雑音半導体レーザ |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015515606A (ja) * | 2012-02-22 | 2015-05-28 | アイティーアイ・スコットランド・リミテッド | ヘテロダイン検波システムおよび方法 |
JP2013222809A (ja) * | 2012-04-16 | 2013-10-28 | Hamamatsu Photonics Kk | 半導体レーザ装置 |
Also Published As
Publication number | Publication date |
---|---|
WO2011021417A1 (ja) | 2011-02-24 |
DE112010003310T5 (de) | 2012-08-02 |
JP5350940B2 (ja) | 2013-11-27 |
US20120014402A1 (en) | 2012-01-19 |
US8675702B2 (en) | 2014-03-18 |
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