JP2011029633A - Cigs太陽電池、及びその製造方法 - Google Patents
Cigs太陽電池、及びその製造方法 Download PDFInfo
- Publication number
- JP2011029633A JP2011029633A JP2010151209A JP2010151209A JP2011029633A JP 2011029633 A JP2011029633 A JP 2011029633A JP 2010151209 A JP2010151209 A JP 2010151209A JP 2010151209 A JP2010151209 A JP 2010151209A JP 2011029633 A JP2011029633 A JP 2011029633A
- Authority
- JP
- Japan
- Prior art keywords
- electrode layer
- solar cell
- layer
- buffer layer
- cigs solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 17
- 230000031700 light absorption Effects 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 23
- 238000006243 chemical reaction Methods 0.000 claims description 20
- QCUOBSQYDGUHHT-UHFFFAOYSA-L cadmium sulfate Chemical compound [Cd+2].[O-]S([O-])(=O)=O QCUOBSQYDGUHHT-UHFFFAOYSA-L 0.000 claims description 16
- 229910000331 cadmium sulfate Inorganic materials 0.000 claims description 16
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 10
- 239000003637 basic solution Substances 0.000 claims description 8
- 238000000224 chemical solution deposition Methods 0.000 claims description 8
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 7
- 239000000243 solution Substances 0.000 claims description 7
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 239000011259 mixed solution Substances 0.000 claims description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 claims 1
- 239000010410 layer Substances 0.000 description 133
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 35
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 24
- 239000010409 thin film Substances 0.000 description 16
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 12
- 239000011669 selenium Substances 0.000 description 12
- 239000011787 zinc oxide Substances 0.000 description 12
- 238000001704 evaporation Methods 0.000 description 11
- 230000008020 evaporation Effects 0.000 description 10
- 239000010408 film Substances 0.000 description 8
- 239000010949 copper Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 229910052711 selenium Inorganic materials 0.000 description 5
- 239000005361 soda-lime glass Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- DTZRWELJKSXUBA-UHFFFAOYSA-N N.[Cd] Chemical compound N.[Cd] DTZRWELJKSXUBA-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- YXHKONLOYHBTNS-UHFFFAOYSA-N Diazomethane Chemical compound C=[N+]=[N-] YXHKONLOYHBTNS-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- -1 chalcopyrite compound Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
【解決手段】本発明によるCIGS太陽電池の製造方法は、多数の突起が露出されるバッファー層を形成する。以後、バッファー層の多数の突起に沿ってデコボコするように屈曲される上部表面を有するウィンドウ電極層を形成する。したがって、ウィンドウ電極層の上部表面を荒いように加工するための別途の加工処理を要求しないために生産性を向上することができる。
【選択図】図1
Description
[化学式1]
CdSO4+4NH3+NH2CSNH2+8H2O
→[Cd(NH3)4]2++(SO4)2−+NH2CSNH2+8H2O
[化学式2]
[Cd(NH3)4]2++NH2CSNH2+2OH−
→CdS+4NH3+CH2N2+2H2O
20 下部電極層
30 光吸収層
40 バッファー層
50 ウィンドウ電極層
60 上部電極層
Claims (7)
- 基板の上に下部電極層を形成する段階と、
前記下部電極層の上に光吸収層を形成する段階と、
前記光吸収層の上で多数の突起が露出されるバッファー層を形成する段階と、
前記バッファー層の前記多数の突起に沿ってデコボコするように屈曲される上部表面を有するウィンドウ電極層を形成する段階と、を含むCIGS太陽電池の製造方法。 - 前記バッファー層は、塩基性溶液を溶媒として使用する化学溶液堆積法に形成される請求項1に記載のCIGS太陽電池の製造方法。
- 前記塩基性溶液は、2%乃至5%の濃度を有するアンモニア水を含む請求項2に記載のCIGS太陽電池の製造方法。
- 前記化学溶液堆積法は、前記塩基性溶液に溶解される反応溶液を使用して硫酸カドミウムを前記バッファー層に形成する請求項3に記載のCIGS太陽電池の製造方法。
- 前記反応溶液は、チオウレアと硫酸カドミウムとの混合溶液を含む請求項4に記載のCIGS太陽電池の製造方法。
- 前記化学溶液成長法は、50℃乃至80℃温度で実行される請求項2に記載のCIGS太陽電池の製造方法。
- 基板の上に形成された下部電極層と、
前記下部電極層の上に形成された光吸収層と、
前記光吸収層の上で多数の突起が露出されるバッファー層と、
前記バッファー層の上で前記多数の突起に沿ってデコボコ屈曲されるウィンドウ電極層と、を含むCIGS太陽電池。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20090067824 | 2009-07-24 | ||
KR10-2009-0067824 | 2009-07-24 | ||
KR10-2009-0125467 | 2009-12-16 | ||
KR1020090125467A KR101358300B1 (ko) | 2009-07-24 | 2009-12-16 | Cigs 태양전지 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011029633A true JP2011029633A (ja) | 2011-02-10 |
JP5450294B2 JP5450294B2 (ja) | 2014-03-26 |
Family
ID=43496235
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010151209A Expired - Fee Related JP5450294B2 (ja) | 2009-07-24 | 2010-07-01 | Cigs太陽電池、及びその製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20110017289A1 (ja) |
JP (1) | JP5450294B2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007025223A1 (de) | 2007-05-31 | 2008-12-04 | Süd-Chemie AG | Zirkoniumoxid-dotierter VAM-Schalenkatalysator, Verfahren zu dessen Herstellung sowie dessen Verwendung |
DE102007025442B4 (de) | 2007-05-31 | 2023-03-02 | Clariant International Ltd. | Verwendung einer Vorrichtung zur Herstellung eines Schalenkatalysators und Schalenkatalysator |
DE202008017277U1 (de) | 2008-11-30 | 2009-04-30 | Süd-Chemie AG | Katalysatorträger |
US8440497B2 (en) * | 2010-10-26 | 2013-05-14 | International Business Machines Corporation | Fabricating kesterite solar cells and parts thereof |
US8466002B2 (en) * | 2011-02-28 | 2013-06-18 | Electronics And Telecommunications Research Institute | Methods of manufacturing a solar cell |
KR101777598B1 (ko) * | 2011-10-17 | 2017-09-14 | 한국전자통신연구원 | 태양전지 제조방법 |
US9018032B2 (en) * | 2012-04-13 | 2015-04-28 | Tsmc Solar Ltd. | CIGS solar cell structure and method for fabricating the same |
TWI558056B (zh) * | 2015-12-04 | 2016-11-11 | 財團法人工業技術研究院 | 具無線充電之太陽能電池結構 |
KR102137547B1 (ko) | 2016-08-12 | 2020-07-24 | 삼성에스디아이 주식회사 | 태양전지용 전면 전극 및 이를 포함하는 태양전지 |
DE102018001727B4 (de) | 2018-03-05 | 2021-02-11 | Mtu Friedrichshafen Gmbh | Verfahren zur modellbasierten Steuerung und Regelung einer Brennkraftmaschine |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09321326A (ja) * | 1996-05-30 | 1997-12-12 | Yazaki Corp | Cis薄膜太陽電池の製造方法、及び銅−インジウム−セレン三元合金の形成方法 |
JP2003282909A (ja) * | 2002-03-26 | 2003-10-03 | Honda Motor Co Ltd | 化合物薄膜太陽電池およびその製造方法 |
JP2004015039A (ja) * | 2002-06-05 | 2004-01-15 | Honda Motor Co Ltd | 化合物薄膜太陽電池およびその製造方法 |
JP2010258279A (ja) * | 2009-04-27 | 2010-11-11 | Kyocera Corp | 光電変換セルおよび光電変換モジュール |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007201304A (ja) * | 2006-01-30 | 2007-08-09 | Honda Motor Co Ltd | 太陽電池およびその製造方法 |
ATE448569T1 (de) * | 2006-04-18 | 2009-11-15 | Dow Corning | Fotovoltaische anordnung auf kupfer-indium- diselenidbasis und herstellungsverfahren dafür |
US20080178932A1 (en) * | 2006-11-02 | 2008-07-31 | Guardian Industries Corp. | Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same |
-
2010
- 2010-04-29 US US12/769,756 patent/US20110017289A1/en not_active Abandoned
- 2010-07-01 JP JP2010151209A patent/JP5450294B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09321326A (ja) * | 1996-05-30 | 1997-12-12 | Yazaki Corp | Cis薄膜太陽電池の製造方法、及び銅−インジウム−セレン三元合金の形成方法 |
JP2003282909A (ja) * | 2002-03-26 | 2003-10-03 | Honda Motor Co Ltd | 化合物薄膜太陽電池およびその製造方法 |
JP2004015039A (ja) * | 2002-06-05 | 2004-01-15 | Honda Motor Co Ltd | 化合物薄膜太陽電池およびその製造方法 |
JP2010258279A (ja) * | 2009-04-27 | 2010-11-11 | Kyocera Corp | 光電変換セルおよび光電変換モジュール |
Also Published As
Publication number | Publication date |
---|---|
US20110017289A1 (en) | 2011-01-27 |
JP5450294B2 (ja) | 2014-03-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5450294B2 (ja) | Cigs太陽電池、及びその製造方法 | |
JP5748787B2 (ja) | 太陽電池及びその製造方法 | |
US20060219288A1 (en) | Process and photovoltaic device using an akali-containing layer | |
TW200937644A (en) | Improved photovoltaic device with solution-processed chalcogenide absorber layer | |
WO1999017377A1 (en) | CADMIUM-FREE JUNCTION FABRICATION PROCESS FOR CuInSe2 THIN FILM SOLAR CELLS | |
TW201515255A (zh) | 光伏裝置及其製造方法 | |
Xie et al. | A progress review on challenges and strategies of flexible Cu2ZnSn (S, Se) 4 solar cells | |
KR100809427B1 (ko) | 광전 변환 소자 및 이의 제조 방법 | |
KR101305802B1 (ko) | 태양전지 및 이의 제조방법 | |
KR101017141B1 (ko) | 3차원 접합형 태양전지 및 그 제조방법 | |
KR101897073B1 (ko) | 태양전지 및 이의 제조 방법 | |
US20150249171A1 (en) | Method of making photovoltaic device comprising i-iii-vi2 compound absorber having tailored atomic distribution | |
KR101283140B1 (ko) | 태양전지 및 이의 제조방법 | |
KR101358300B1 (ko) | Cigs 태양전지 및 그 제조방법 | |
KR102212042B1 (ko) | 원자층 증착법으로 형성된 버퍼층을 포함하는 태양전지 및 이의 제조방법 | |
TWI751520B (zh) | Pn接面及其製備方法及用途 | |
KR101485009B1 (ko) | Cigs계 박막 태양 전지의 제조 방법 및 이에 따른 태양 전지 | |
KR20130059228A (ko) | 태양전지 및 이의 제조방법 | |
KR20130070687A (ko) | 태양전지 및 이의 제조방법 | |
KR100996162B1 (ko) | 박막형 태양전지와 이의 제조방법, 및 박막형 태양전지의 광흡수층 제조방법 | |
KR100833517B1 (ko) | 광전 물질 및 그의 제조 방법 | |
KR101432903B1 (ko) | 이원계 분말을 이용한 cιs 박막 태양전지 제조 방법 | |
KR20150118605A (ko) | 태양 전지 및 이의 제조방법 | |
KR20130128131A (ko) | 광흡수층 제조방법 및 이를 이용한 태양전지 제조방법 | |
JP2008147661A (ja) | 光電物質及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120628 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120703 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120928 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130319 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130523 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20131203 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20131225 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |