JP2011023700A - 電界効果トランジスタ及びその製造方法 - Google Patents
電界効果トランジスタ及びその製造方法 Download PDFInfo
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- 230000005669 field effect Effects 0.000 title claims abstract description 86
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 99
- 239000000758 substrate Substances 0.000 claims abstract description 99
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 87
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims abstract description 86
- 229910052751 metal Inorganic materials 0.000 claims abstract description 62
- 239000002184 metal Substances 0.000 claims abstract description 61
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 37
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 36
- 238000002955 isolation Methods 0.000 claims abstract description 30
- 125000006850 spacer group Chemical group 0.000 claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- 238000010438 heat treatment Methods 0.000 claims description 10
- 229910052732 germanium Inorganic materials 0.000 claims description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 52
- 238000000034 method Methods 0.000 description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 239000000243 solution Substances 0.000 description 21
- 239000002019 doping agent Substances 0.000 description 16
- 239000007943 implant Substances 0.000 description 14
- 238000005530 etching Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
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- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 229910052809 inorganic oxide Inorganic materials 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052752 metalloid Inorganic materials 0.000 description 2
- 150000002738 metalloids Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
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- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
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- 238000004140 cleaning Methods 0.000 description 1
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- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
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- 150000002500 ions Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 1
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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Abstract
【解決手段】素子分離領域106間のソース/ドレイン領域114、及びポケット領域116を含んでいる半導体基板102と、素子分離領域間の半導体基板の上面のトレンチ110内にあって、(100)面を有する底面及び上面と、2つ以上の平面を有する側面とを有するシリコンゲルマニウム層112と、ゲート絶縁層120、ゲート電極122、及びサイドスペーサ128を含むシリコンゲルマニウム層上のゲート構造と、ゲート構造によって覆われていないシリコンゲルマニウム層及び半導体基板の上部分上のメタルシリサイド124とを備え、シリコンゲルマニウム層は、チャネル長方向において、ゲート構造の下で側面を有していない。
【選択図】 図1
Description
102…半導体基板
104…活性領域
106…素子分離領域
108…ゲート構造
110…トレンチ
112…シリコンゲルマニウム層
114…ソース/ドレイン領域
116…ポケット領域
118…チャネル領域
120…ゲート絶縁層
122…ゲート電極
124…メタルシリサイド
126…メタルシリサイド
128…サイドスペーサ
200…電界効果トランジスタ
202…半導体基板
204…素子分離領域
300…トレンチ
302…底面
304…側面
400…トレンチ
402…側面
500…シリコンゲルマニウム層
502…底面
504…上面
506…側面
600…ゲート構造
602…ゲート絶縁層
700…ドレインエクステンション領域
702…チャネル領域
704…ポケット領域
706…矢印
800…サイドスペーサ
900…ソース/ドレイン領域
902…チャネル領域
1000…メタルシリサイド
1002…メタルシリサイド
Claims (7)
- 素子分離領域間のソース/ドレイン領域、及びポケット領域を含んでいる半導体基板と、
前記素子分離領域間の前記半導体基板の上面のトレンチ内にあって、(100)面を有する底面及び上面と、2つ以上の平面を有する側面とを有するシリコンゲルマニウム層と、
ゲート絶縁層、ゲート電極、及びサイドスペーサを含む前記シリコンゲルマニウム層上のゲート構造と、
前記ゲート構造によって覆われていない前記シリコンゲルマニウム層及び前記半導体基板の上部分上のメタルシリサイドと
を備え、
前記シリコンゲルマニウム層は、チャネル長方向において、前記ゲート構造の下で側面を有していないことを特徴とする電界効果トランジスタ。 - 前記トレンチは(100)面を有する底面、及び2以上の平面を有する側面を有することを特徴とする請求項1記載の電界効果トランジスタ。
- 前記シリコンゲルマニウム層は、約0wt.%以上、約80wt.%以下のシリコン及び約20wt.%以上、約100wt.%以下のゲルマニウムを含むことを特徴とする請求項1記載の電界効果トランジスタ。
- 素子分離領域間のソース/ドレイン領域、及びポケット領域を含んでいる半導体基板と、
前記素子分離領域間の前記半導体基板の実質的に上面全面のトレンチ内にあって、(100)面を有する底面及び上面と、2つ以上の平面を有する側面とを有している前記シリコンゲルマニウム層と、
ゲート絶縁層、ゲート電極、及びサイドスペーサを含んでいる前記シリコンゲルマニウム層上のゲート構造と、
前記ゲート構造によって覆われていない前記シリコンゲルマニウム層及び前記半導体基板の上部分上のメタルシリサイドと
を備えることを特徴とする電界効果トランジスタ。 - 前記トレンチは(100)面を有する底面、及び2以上の平面を有する側面を有することを特徴とする請求項4記載の電界効果トランジスタ。
- 前記シリコンゲルマニウム層は、約0wt.%以上、約80wt.%以下のシリコン及び約20wt.%以上、約100wt.%以下のゲルマニウムを含むことを特徴とする請求項4記載の電界効果トランジスタ。
- 素子分離領域間の半導体基板の実質的に上部分全面にトレンチを形成し、前記トレンチは、(100)面を有する底面、及び(111)面を有する側面を有し、
前記トレンチの前記側面の前記(111)面を2以上の異なる平面に変化させるために前記半導体基板を熱し、
前記トレンチ内にシリコンゲルマニウム層を形成し、前記シリコンゲルマニウム層は(100)面を有する底面及び上面と、2以上の平面を有する側面とを有し、
前記シリコンゲルマニウム層上にゲート絶縁層、ゲート電極、及びサイドスペーサを含むゲート構造を形成し、
前記半導体基板内にソース/ドレイン領域及びポケット領域を形成し、
前記ゲート構造によって覆われていない前記シリコンゲルマニウム層及び前記半導体基板の上部分上にメタルシリサイドを形成すること
を含むことを特徴とする電界効果トランジスタの製造方法。
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US12/501,718 US20110006349A1 (en) | 2009-07-13 | 2009-07-13 | Field effect transistor having channel silicon germanium |
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US8858818B2 (en) * | 2010-09-30 | 2014-10-14 | Suvolta, Inc. | Method for minimizing defects in a semiconductor substrate due to ion implantation |
US8916424B2 (en) * | 2012-02-07 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8778786B1 (en) | 2012-05-29 | 2014-07-15 | Suvolta, Inc. | Method for substrate preservation during transistor fabrication |
US8685816B2 (en) | 2012-06-11 | 2014-04-01 | Globalfoundries Inc. | Methods of forming semiconductor devices by forming semiconductor channel region materials prior to forming isolation structures |
CN103413758B (zh) * | 2013-07-17 | 2017-02-08 | 华为技术有限公司 | 半导体鳍条的制作方法、FinFET器件的制作方法 |
CN104808825B (zh) * | 2014-01-28 | 2018-08-03 | 联发科技(新加坡)私人有限公司 | 触控事件隔离方法及其装置 |
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US6703271B2 (en) * | 2001-11-30 | 2004-03-09 | Taiwan Semiconductor Manufacturing Company | Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layer |
US7119417B2 (en) * | 2003-09-25 | 2006-10-10 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and fabrication method thereof |
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