JP2011009687A - 発光素子、発光装置、電子機器、および照明装置 - Google Patents
発光素子、発光装置、電子機器、および照明装置 Download PDFInfo
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- JP2011009687A JP2011009687A JP2009263613A JP2009263613A JP2011009687A JP 2011009687 A JP2011009687 A JP 2011009687A JP 2009263613 A JP2009263613 A JP 2009263613A JP 2009263613 A JP2009263613 A JP 2009263613A JP 2011009687 A JP2011009687 A JP 2011009687A
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- 239000000126 substance Substances 0.000 claims description 225
- 230000005525 hole transport Effects 0.000 claims description 58
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical group [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 18
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 17
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 229910052783 alkali metal Inorganic materials 0.000 claims description 16
- 150000001340 alkali metals Chemical class 0.000 claims description 16
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 14
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 claims description 13
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 12
- 150000002910 rare earth metals Chemical class 0.000 claims description 12
- 150000001339 alkali metal compounds Chemical class 0.000 claims description 11
- 150000001341 alkaline earth metal compounds Chemical class 0.000 claims description 11
- 150000002909 rare earth metal compounds Chemical class 0.000 claims description 11
- 150000001491 aromatic compounds Chemical class 0.000 claims description 6
- 238000005286 illumination Methods 0.000 claims description 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 6
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 5
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 4
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- 230000000052 comparative effect Effects 0.000 description 46
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- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 5
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 5
- 229910052808 lithium carbonate Inorganic materials 0.000 description 5
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- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 4
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- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 3
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】陽極と陰極との間にEL層を有する発光素子において、陰極とEL層との間にキャリアの発生が可能である第1の層を陰極と接して形成し、第1の層で生じた電子の受け渡しを行う第2の層を第1の層と接して形成し、第2の層から渡された電子をEL層に注入する第3の層を第2の層と接して形成する。
【選択図】図1
Description
本実施の形態では、本発明の一態様である発光素子の素子構造について、図1(A)(B)により説明する。
本実施の形態では、実施の形態1で説明した基本構成に含まれる発光素子の一例について、図2(A)(B)を用いて説明する。
本実施の形態では、実施の形態1で説明した基本構成に含まれる発光素子の一例について図3(A)(B)を用いて説明する。
本実施の形態では、実施の形態1で説明した基本構成に含まれる発光素子の一例として、電荷発生領域106の構成について、図4(A)(B)を用いて説明する。
本実施の形態では、実施の形態1で説明した基本構成に含まれる発光素子の一例として、EL層103の一部に陽極101と接して第1の電荷発生領域が形成される場合の構成について、図5(A)(B)を用いて説明する。従って、本実施の形態では、本実施の形態において説明する、EL層103の一部であって、陽極101と接して形成される電荷発生領域を第1の電荷発生領域108とし、実施の形態1で説明した電荷発生領域106を第2の電荷発生領域116とする。
本実施の形態では、実施の形態1乃至実施の形態5で説明した発光素子を用いて作製される発光装置の一例として、パッシブマトリクス型の発光装置およびアクティブマトリクス型の発光装置について説明する。
本実施の形態では、本発明の一態様を適用して作製した発光装置を用いて完成させた様々な電子機器および照明装置について、図9を用いて説明する。
まず、ガラス基板上に110nmの膜厚で珪素若しくは酸化珪素を含むインジウム錫酸化物をスパッタリング法で成膜し、陽極を形成した(電極面積2mm×2mm)。
電子注入バッファーを形成するまでは、発光素子Aと同様に作製した。その後、電子リレー層および第2の電荷発生領域を形成せずに陰極を形成し、比較発光素子a−1とした。
電子注入バッファーを形成するまでは、発光素子Aと同様に作製した。その後、電子リレー層を形成せずに第2の電荷発生領域および陰極を形成し、比較発光素子a−2とした。
陽極、第1の電荷発生領域、正孔輸送層、発光層までを実施例1で示した発光素子Aと同様の材料を用いて同様の方法で形成した後、抵抗加熱による蒸着法により、トリス(8−キノリノラト)アルミニウム(略称:Alq)を10nmの膜厚となるように成膜して電子輸送層を形成した。
電子注入バッファーを形成するまでは、発光素子Bと同様に作製した。その後、電子リレー層および第2の電荷発生領域を形成せずに陰極を形成し、比較発光素子b−1とした。
電子注入バッファーを形成するまでは、発光素子Bと同様に作製した。その後、電子リレー層を形成せずに第2の電荷発生領域および陰極を形成し、比較発光素子b−2とした。
陽極、第1の電荷発生領域、正孔輸送層、発光層、電子輸送層、電子注入バッファー、電子リレー層までを実施例1で示した発光素子Aと同様の材料を用いて同様の方法で形成した後、抵抗加熱による蒸着法により、トリス(8−キノリノラト)アルミニウム(略称:Alq)を10nmの膜厚となるように成膜し、続いて同じく抵抗加熱による蒸着法により、バソフェナントロリン(略称:BPhen)を10nmの膜厚となるように成膜して電子輸送層を形成した。
電子注入バッファーの形成までは、発光素子Cと同様に作製した。その後、電子リレー層を形成せずに第2の電荷発生領域および陰極を形成し、比較発光素子c−1とした。
陽極、第1の電荷発生領域、正孔輸送層、発光層、電子輸送層、電子注入バッファー、電子リレー層までを実施例2で示した発光素子Bと同様の材料を用いて同様の方法で形成した後、抵抗加熱による蒸着法により、アクセプター性物質である酸化モリブデン(VI)を10nmの膜厚となるように成膜し、続いて同じく抵抗加熱による蒸着法により、正孔輸送性の高い物質である4,4’−ビス[N−(1−ナフチル)−N−フェニルアミノ]ビフェニル(略称:NPB)を10nmの膜厚となるように成膜して、第2の電荷発生領域を形成した。
電子注入バッファーの形成までは、発光素子Dと同様に作製した。その後、電子リレー層を形成せずに第2の電荷発生領域および陰極を形成し、比較発光素子d−1とした。
102 陰極
103 EL層
104 電子注入バッファー
105 電子リレー層
106 電荷発生領域
106a 正孔輸送性の高い物質を含む層
106b アクセプター性物質を含む層
107 電子輸送層
108 第1の電荷発生領域
108a 正孔輸送性の高い物質を含む層
108b アクセプター性物質を含む層
111 陽極101のフェルミ準位
112 陰極102のフェルミ準位
113 EL層103のLUMO準位
114 電子リレー層105のLUMO準位
115 電荷発生領域106におけるアクセプター性物質のアクセプター準位
116 第2の電荷発生領域
116a 正孔輸送性の高い物質を含む層
116b アクセプター性物質を含む層
601 基板
602 絶縁層
603 第1の電極
604 隔壁
605 開口部
606 逆テーパ状の隔壁
607 有機化合物を含む層
608 第2の電極
703 走査線
705 領域
706 隔壁
708 データ線
709 接続配線
710 入力端子
711a、711b FPC
712 入力端子
801 素子基板
802 画素部
803 駆動回路部(ソース側駆動回路)
804 駆動回路部(ゲート側駆動回路)
805 シール材
806 封止基板
807 引き回し配線
808 FPC(フレキシブルプリントサーキット)
809 nチャネル型TFT
810 pチャネル型TFT
811 スイッチング用TFT
812 電流制御用TFT
813 陽極
814 絶縁物
815 有機化合物を含む層
816 陰極
817 発光素子
818 空間
9100 テレビジョン装置
9101 筐体
9103 表示部
9105 スタンド
9107 表示部
9109 操作キー
9110 リモコン操作機
9201 本体
9202 筐体
9203 表示部
9204 キーボード
9205 外部接続ポート
9206 ポインティングデバイス
9301 筐体
9302 筐体
9303 連結部
9304 表示部
9305 表示部
9306 スピーカ部
9307 記録媒体挿入部
9308 LEDランプ
9309 操作キー
9310 接続端子
9311 センサ
9312 マイクロフォン
9400 携帯電話機
9401 筐体
9402 表示部
9403 操作ボタン
9404 外部接続ポート
9405 スピーカ
9406 マイク
9501 照明部
9502 傘
9503 可変アーム
9504 支柱
9505 台
9506 電源スイッチ
1001 天井固定型照明装置
1002 壁掛け型照明装置
1003 卓上照明装置
Claims (17)
- 陽極と陰極との間にEL層を少なくとも有し、
前記陰極と前記EL層との間に、前記陰極と接して正孔輸送性の高い物質とアクセプター性物質とを含む第1の層を有し、
前記第1の層と接して電子輸送性の高い物質を含む第2の層を有し、
前記第2の層および前記EL層と接してアルカリ金属、アルカリ土類金属、希土類金属、アルカリ金属化合物、アルカリ土類金属化合物、または希土類金属の化合物のいずれかを含む第3の層とを有する発光素子。 - 請求項1において、
前記EL層は、電子輸送性の高い物質を含む第4の層を含み、
前記第4の層と前記第3の層とが接する発光素子。 - 陽極と陰極との間にEL層を少なくとも有し、
前記陰極と前記EL層との間に、前記陰極と接して正孔輸送性の高い物質とアクセプター性物質とを含む第1の層を有し、
前記第1の層と接して電子輸送性の高い物質を含む第2の層を有し、
前記第2の層および前記EL層と接してドナー性物質および電子輸送性の高い物質を含む第3の層とを有する発光素子。 - 請求項1乃至請求項3のいずれか一において、
前記第1の層は、正孔輸送性の高い物質に対して質量比で、0.1以上4.0以下の比率でアクセプター性物質を含む発光素子。 - 請求項1乃至請求項4のいずれか一において、
前記第1の層は、正孔輸送性の高い物質を含む層とアクセプター性物質を含む層からなる積層構造である発光素子。 - 請求項3乃至請求項5のいずれか一において、
前記第3の層は、電子輸送性の高い物質に対して質量比で、0.001以上0.1以下の比率でドナー性物質を含む発光素子。 - 請求項3乃至請求項6のいずれか一において、
前記ドナー性物質は、アルカリ金属、アルカリ土類金属、希土類金属、アルカリ金属化合物、アルカリ土類金属化合物、または希土類金属の化合物である発光素子。 - 請求項1乃至請求項7のいずれか一において、
前記第2の層に含まれる電子輸送性の高い物質は、LUMO準位が−5.0eV以上である発光素子。 - 請求項1乃至請求項8のいずれか一において、
前記第2の層に含まれる電子輸送性の高い物質は、ペリレン誘導体または含窒素縮合芳香族化合物である発光素子。 - 請求項1乃至請求項9のいずれか一において、
前記EL層は、正孔輸送性の高い物質とアクセプター性物質とを含む第5の層を含み、
前記第5の層と前記陽極とが接する発光素子。 - 請求項10において、
前記第5の層は、正孔輸送性の高い物質に対して質量比で、0.1以上4.0以下の比率でアクセプター性物質を含む発光素子。 - 請求項10または請求項11において、
前記第5の層は、正孔輸送性の高い物質を含む層とアクセプター性物質を含む層からなる積層構造である発光素子。 - 請求項1乃至請求項12のいずれか一において、
前記第1の層に含まれる前記アクセプター性物質は、遷移金属酸化物や元素周期表における第4族乃至第8族に属する金属の酸化物である発光素子。 - 請求項1乃至請求項12のいずれか一において、
前記第1の層に含まれる前記アクセプター性物質は、酸化モリブデンである発光素子。 - 請求項1乃至請求項14のいずれか一に記載の発光素子を用いて形成される発光装置。
- 請求項15に記載の発光装置を用いて形成される電子機器。
- 請求項15に記載の発光装置を用いて形成される照明装置。
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JP2012186392A (ja) * | 2011-03-07 | 2012-09-27 | Seiko Epson Corp | 発光素子、発光装置、表示装置および電子機器 |
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EP2192634A1 (en) | 2010-06-02 |
JP5623604B2 (ja) | 2014-11-12 |
JP6174079B2 (ja) | 2017-08-02 |
US8158991B2 (en) | 2012-04-17 |
JP6113222B2 (ja) | 2017-04-12 |
CN101752510B (zh) | 2015-05-13 |
JP6530450B2 (ja) | 2019-06-12 |
CN104733631B (zh) | 2017-10-13 |
US20190386236A1 (en) | 2019-12-19 |
JP2019140412A (ja) | 2019-08-22 |
JP6805290B2 (ja) | 2020-12-23 |
US20120168738A1 (en) | 2012-07-05 |
US8835973B2 (en) | 2014-09-16 |
JP2015179871A (ja) | 2015-10-08 |
US20100133523A1 (en) | 2010-06-03 |
JP2013239739A (ja) | 2013-11-28 |
CN104733631A (zh) | 2015-06-24 |
JP5759669B2 (ja) | 2015-08-05 |
CN101752510A (zh) | 2010-06-23 |
JP2015201655A (ja) | 2015-11-12 |
US11139445B2 (en) | 2021-10-05 |
EP2192634B1 (en) | 2018-08-29 |
US10403843B2 (en) | 2019-09-03 |
JP2017175167A (ja) | 2017-09-28 |
US20140374737A1 (en) | 2014-12-25 |
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