JP2011009727A - 発光素子、発光装置、電子機器、および照明装置 - Google Patents
発光素子、発光装置、電子機器、および照明装置 Download PDFInfo
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- JP2011009727A JP2011009727A JP2010120050A JP2010120050A JP2011009727A JP 2011009727 A JP2011009727 A JP 2011009727A JP 2010120050 A JP2010120050 A JP 2010120050A JP 2010120050 A JP2010120050 A JP 2010120050A JP 2011009727 A JP2011009727 A JP 2011009727A
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- 230000005525 hole transport Effects 0.000 claims description 52
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- 150000001342 alkaline earth metals Chemical class 0.000 claims description 12
- 229910052783 alkali metal Inorganic materials 0.000 claims description 11
- 150000001340 alkali metals Chemical class 0.000 claims description 11
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 11
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 7
- 150000002910 rare earth metals Chemical class 0.000 claims description 7
- 150000001339 alkali metal compounds Chemical class 0.000 claims description 6
- 150000001341 alkaline earth metal compounds Chemical class 0.000 claims description 6
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- 238000005286 illumination Methods 0.000 claims description 6
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- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 claims description 6
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
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Abstract
【解決手段】陽極と陰極との間にEL層を有する発光素子において、陰極とEL層との間にキャリアの発生が可能である第1の層を陰極と接して形成し、第1の層で生じた電子の受け渡しを行う第2の層を第1の層と接して形成し、第2の層から渡された電子をEL層に注入する第3の層を第2の層と接して形成する。
【選択図】図1
Description
本実施の形態1では、本発明の一例である発光素子の素子構造について、図1(A)(B)により説明する。
、ビス[2−(4’,6’−ジフルオロフェニル)ピリジナト−N,C2’]イリジウム(III)アセチルアセトナート(略称:FIracac)、トリス(2−フェニルピリジナト)イリジウム(III)(略称:Ir(ppy)3)、ビス(2−フェニルピリジナト)イリジウム(III)アセチルアセトナート(略称:Ir(ppy)2(acac))、ビス(ベンゾ[h]キノリナト)イリジウム(III)アセチルアセトナート(略称:Ir(bzq)2(acac))、ビス(2,4−ジフェニル−1,3−オキサゾラト−N,C2’)イリジウム(III)アセチルアセトナート(略称:Ir(dpo)2(acac))、ビス[2−(4’−パーフルオロフェニルフェニル)ピリジナト]イリジウム(III)アセチルアセトナート(略称:Ir(p−PF−ph)2(acac))、ビス(2−フェニルベンゾチアゾラト−N,C2’)イリジウム(III)アセチルアセトナート(略称:Ir(bt)2(acac))、ビス[2−(2’−ベンゾ[4,5−α]チエニル)ピリジナト−N,C3’]イリジウム(III)アセチルアセトナート(略称:Ir(btp)2(acac))、ビス(1−フェニルイソキノリナト−N,C2’)イリジウム(III)アセチルアセトナート(略称:Ir(piq)2(acac))、(アセチルアセトナト)ビス[2,3−ビス(4−フルオロフェニル)キノキサリナト]イリジウム(III)(略称:Ir(Fdpq)2(acac))、(アセチルアセトナト)ビス(2,3,5−トリフェニルピラジナト)イリジウム(III)(略称:Ir(tppr)2(acac))、2,3,7,8,12,13,17,18−オクタエチル−21H,23H−ポルフィリン白金(II)(略称:PtOEP)、トリス(アセチルアセトナト)(モノフェナントロリン)テルビウム(III)(略称:Tb(acac)3(Phen))、トリス(1,3−ジフェニル−1,3−プロパンジオナト)(モノフェナントロリン)ユーロピウム(III)(略称:Eu(DBM)3(Phen))、トリス[1−(2−テノイル)−3,3,3−トリフルオロアセトナト](モノフェナントロリン)ユーロピウム(III)(略称:Eu(TTA)3(Phen))などが挙げられる。
本実施の形態2では、実施の形態1で説明した基本構成に含まれる発光素子の一例について、図2(A)(B)を用いて説明する。
本実施の形態3では、実施の形態1で説明した基本構成に含まれる発光素子の一例について、図3(A)(B)を用いて説明する。
本実施の形態では、実施の形態1で説明した基本構成に含まれる発光素子の一例として、電荷発生領域106の構成について、図4(A)(B)を用いて説明する。
本実施の形態では、実施の形態1で説明した基本構成に含まれる発光素子の一例として、EL層103の一部にも陽極101と接して電荷発生領域が形成される場合の構成について、図5(A)(B)を用いて説明する。従って、本実施の形態で示す発光素子は、陰極と陽極の間に調整層108とEL層103を有して形成された発光素子である。詳細は後述するが、実施の形態1で説明した調整層の一部である電荷発生領域106を第1の電荷発生領域117とし、本実施の形態において説明する。また、EL層103の一部であって、陽極101と接して形成される電荷発生領域を第2の電荷発生領域118とする。
本実施の形態6では、実施の形態1乃至実施の形態5で説明した発光素子を用いて作製される発光装置の一例として、パッシブマトリクス型の発光装置およびアクティブマトリクス型の発光装置について説明する。
本実施の形態では、本発明を適用して作製した発光装置を用いて完成させた様々な電子機器および照明装置について、図9を用いて説明する。
まず、ガラス基板上に110nmの膜厚で酸化珪素を含む酸化インジウム−酸化スズ(略称:ITSO)をスパッタリング法で成膜し、陽極を形成した(電極面積2mm×2mm)。
ガラス基板上に陽極から電子注入バッファーを形成するまでは、発光素子Aと同様に作製した。その後、電子リレー層および第2の電荷発生領域を形成せずに発光素子Aと同様に陰極を形成し、比較発光素子a−1とした。
ガラス基板上に陽極から電子注入バッファーを形成するまでは、発光素子Aと同様に作製した。その後、電子リレー層を形成せずに発光素子Aと同様に第2の電荷発生領域および陰極を形成し、比較発光素子a−2とした。
陽極、第1の電荷発生領域、正孔輸送層、発光層、電子輸送層、電子注入バッファーまでを実施例1で示した発光素子Aと同様の材料を用いて同様の方法で形成した後、ピラジノ[2,3−f][1,10]フェナントロリン−2,3−ジカルボニトリル(略称:PPDN)とリチウム(Li)をPPDN:Li=1:0.02となるように共蒸着して電子リレー層を形成した。膜厚は、3nm程度形成した。
電子注入バッファーを形成するまでは、発光素子Bと同様に作製した。その後、電子リレー層を形成せずに発光素子Bと同様に第2の電荷発生領域および陰極を形成し、比較発光素子b−1とした。
102 陰極
103 EL層
104 電子注入バッファー
105 電子リレー層
106 電荷発生領域
106a 正孔輸送性の高い物質を含む層
106b アクセプター性物質を含む層
107 電子輸送層
108 調整層
111 陽極101のフェルミ準位
112 陰極102のフェルミ準位
113 EL層103のLUMO準位
114 電子リレー層105のLUMO準位
115 電子リレー層105におけるドナー性物質のドナー準位
116 電荷発生領域106におけるアクセプター性物質のアクセプター準位
117 第1の電荷発生領域
117a 正孔輸送性の高い物質を含む層
117b アクセプター性物質を含む層
118 第2の電荷発生領域
118a 正孔輸送性の高い物質を含む層
118b アクセプター性物質を含む層
601 基板
602 下地絶縁層
603 第1の電極
604 隔壁
605 開口部
606 逆テーパ状の隔壁
607 有機化合物を含む層
608 第2の電極
703 走査線
705 領域
706 隔壁
708 データ線
709 接続配線
710 入力端子
711a、711b FPC
712 入力端子
801 素子基板
802 画素部
803 駆動回路部(ソース側駆動回路)
804 駆動回路部(ゲート側駆動回路)
805 シール材
806 封止基板
807 引き回し配線
808 FPC
809 nチャネル型TFT
810 pチャネル型TFT
811 スイッチング用TFT
812 電流制御用TFT
813 陽極
814 絶縁物
815 有機化合物を含む層
816 陰極
817 発光素子
818 空間
9100 テレビジョン装置
9101 筐体
9103 表示部
9105 スタンド
9107 表示部
9109 操作キー
9110 リモコン操作機
9201 本体
9202 筐体
9203 表示部
9204 キーボード
9205 外部接続ポート
9206 ポインティングデバイス
9301 筐体
9302 筐体
9303 連結部
9304 表示部
9305 表示部
9306 スピーカ部
9307 記録媒体挿入部
9308 LEDランプ
9309 操作キー
9310 接続端子
9311 センサ
9312 マイクロフォン
9400 携帯電話機
9401 筐体
9402 表示部
9403 操作ボタン
9404 外部接続ポート
9405 スピーカ
9406 マイク
9501 照明部
9502 傘
9503 可変アーム
9504 支柱
9505 台
9506 電源
1001 天井固定型照明装置
1002 壁掛け型照明装置
1003 卓上照明装置
Claims (17)
- 陽極と陰極との間にEL層を少なくとも有し、
前記陰極と前記EL層との間に、前記陰極と接して正孔輸送性の高い物質とアクセプター性物質とを含む第1の層を有し、
前記第1の層と接してドナー性物質および電子輸送性の高い第1の物質を含む第2の層を有し、
前記第2の層および前記EL層と接してドナー性物質および電子輸送性の高い第2の物質を含む第3の層とを有し、
前記第1の物質は、前記第2の物質よりもLUMO準位が低いことを特徴とする発光素子。 - 請求項1において、
前記EL層は、電子輸送性の高い物質を含む第4の層を含み、
前記第4の層と前記第3の層とが接することを特徴とする発光素子。 - 請求項1または請求項2において、
前記第1の層は、正孔輸送性の高い物質に対して質量比で、0.1以上4.0以下の比率でアクセプター性物質を添加することを特徴とする発光素子。 - 請求項1乃至請求項3のいずれか一において、
前記第1の層は、正孔輸送性の高い物質を含む層とアクセプター性物質を含む層からなる積層構造であることを特徴とする発光素子。 - 請求項1乃至請求項4のいずれか一において、
前記第2の層は、前記第1の物質に対して質量比で、0.001以上0.1以下の比率でドナー性物質を添加することを特徴とする発光素子。 - 請求項1乃至請求項5のいずれか一において、
前記第2の層に含まれる前記第1の物質は、LUMO準位が−5.0eV以上であることを特徴とする発光素子。 - 請求項1乃至請求項6のいずれか一において、
前記第2の層に含まれる前記第1の物質は、ペリレン誘導体または含窒素縮合芳香族化合物であることを特徴とする発光素子。 - 請求項1乃至請求項7のいずれか一において、
前記第3の層は、前記第2の物質に対して質量比で、0.001以上0.1以下の比率でドナー性物質を添加することを特徴とする発光素子。 - 請求項1乃至請求項8のいずれか一において、
前記ドナー性物質は、アルカリ金属、アルカリ土類金属、希土類金属、アルカリ金属化合物、アルカリ土類金属化合物、または希土類金属の化合物であることを特徴とする発光素子。 - 請求項1乃至請求項9のいずれか一において、
前記EL層は、正孔輸送性の高い物質とアクセプター性物質とを含む第5の層を含み、
前記第5の層と前記陽極とが接することを特徴とする発光素子。 - 請求項10において、
前記第5の層は、正孔輸送性の高い物質に対して質量比で、0.1以上4.0以下の比率でアクセプター性物質を添加することを特徴とする発光素子。 - 請求項10または請求項11において、
前記第5の層は、正孔輸送性の高い物質を含む層とアクセプター性物質を含む層からなる積層構造であることを特徴とする発光素子。 - 請求項1乃至請求項12のいずれか一において、
前記アクセプター性物質は、遷移金属酸化物や元素周期表における第4族乃至第8族に属する金属の酸化物であることを特徴とする発光素子。 - 請求項1乃至請求項12のいずれか一において、
前記アクセプター性物質は、酸化モリブデンであることを特徴とする発光素子。 - 請求項1乃至請求項14のいずれか一に記載の発光素子を用いて形成されたことを特徴とする発光装置。
- 請求項15に記載の発光装置を用いて形成されたことを特徴とする電子機器。
- 請求項15に記載の発光装置を用いて形成されたことを特徴とする照明装置。
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KR101955182B1 (ko) | 2019-03-08 |
JP5825746B2 (ja) | 2015-12-02 |
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KR102105513B1 (ko) | 2020-04-29 |
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