JP2010537395A5 - - Google Patents

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Publication number
JP2010537395A5
JP2010537395A5 JP2010510369A JP2010510369A JP2010537395A5 JP 2010537395 A5 JP2010537395 A5 JP 2010537395A5 JP 2010510369 A JP2010510369 A JP 2010510369A JP 2010510369 A JP2010510369 A JP 2010510369A JP 2010537395 A5 JP2010537395 A5 JP 2010537395A5
Authority
JP
Japan
Prior art keywords
template
imprint lithography
thickness
layer
patterning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2010510369A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010537395A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2008/006921 external-priority patent/WO2008150499A1/en
Publication of JP2010537395A publication Critical patent/JP2010537395A/ja
Publication of JP2010537395A5 publication Critical patent/JP2010537395A5/ja
Withdrawn legal-status Critical Current

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JP2010510369A 2007-05-30 2008-05-30 窒化ケイ素、炭化ケイ素、または酸窒化ケイ素膜を有するテンプレート Withdrawn JP2010537395A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US94073707P 2007-05-30 2007-05-30
PCT/US2008/006921 WO2008150499A1 (en) 2007-05-30 2008-05-30 Template having a silicon nitride, silicon carbide, or silicon oxynitride film

Publications (2)

Publication Number Publication Date
JP2010537395A JP2010537395A (ja) 2010-12-02
JP2010537395A5 true JP2010537395A5 (enExample) 2011-01-20

Family

ID=40094021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010510369A Withdrawn JP2010537395A (ja) 2007-05-30 2008-05-30 窒化ケイ素、炭化ケイ素、または酸窒化ケイ素膜を有するテンプレート

Country Status (5)

Country Link
US (2) US20090004319A1 (enExample)
JP (1) JP2010537395A (enExample)
KR (1) KR20100031570A (enExample)
TW (1) TW200907562A (enExample)
WO (1) WO2008150499A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10456111B2 (en) * 2006-12-07 2019-10-29 Samsung Medison Co., Ltd. Ultrasound system and signal processing unit configured for time gain and lateral gain compensation
US8715515B2 (en) * 2009-03-23 2014-05-06 Intevac, Inc. Process for optimization of island to trench ratio in patterned media
CN101629663B (zh) * 2009-08-18 2011-01-05 河北亚大汽车塑料制品有限公司 一种直插式快插接头
JP6400074B2 (ja) 2013-03-15 2018-10-03 キャノン・ナノテクノロジーズ・インコーポレーテッド 金属又は酸化物コーティングを有する再使用可能なポリマーテンプレートによるナノインプリンティング
US12405537B2 (en) * 2021-07-27 2025-09-02 Canon Kabushiki Kaisha Devices, systems, and methods for the transformation and cropping of drop patterns

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3372258B2 (ja) * 1995-08-04 2003-01-27 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン リソグラフィ・プロセス用のスタンプ
US6309580B1 (en) * 1995-11-15 2001-10-30 Regents Of The University Of Minnesota Release surfaces, particularly for use in nanoimprint lithography
US6274393B1 (en) * 1998-04-20 2001-08-14 International Business Machines Corporation Method for measuring submicron images
US6207570B1 (en) * 1999-08-20 2001-03-27 Lucent Technologies, Inc. Method of manufacturing integrated circuit devices
US6873087B1 (en) * 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
EP2264524A3 (en) * 2000-07-16 2011-11-30 The Board of Regents of The University of Texas System High-resolution overlay alignement methods and systems for imprint lithography
US6284653B1 (en) * 2000-10-30 2001-09-04 Vanguard International Semiconductor Corp. Method of selectively forming a barrier layer from a directionally deposited metal layer
US6387787B1 (en) * 2001-03-02 2002-05-14 Motorola, Inc. Lithographic template and method of formation and use
JP2003281791A (ja) * 2002-03-22 2003-10-03 Toshiba Corp 片面２層光ディスク及びその製造方法及び装置
US7083880B2 (en) * 2002-08-15 2006-08-01 Freescale Semiconductor, Inc. Lithographic template and method of formation and use
US7083860B2 (en) * 2002-08-16 2006-08-01 Emitec Gesellschaft Fuer Emissionstechnologie Mbh Metallic honeycomb body having at least partially perforated sheet-metal layers
US6936194B2 (en) * 2002-09-05 2005-08-30 Molecular Imprints, Inc. Functional patterning material for imprint lithography processes
US8349241B2 (en) * 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US20040065252A1 (en) * 2002-10-04 2004-04-08 Sreenivasan Sidlgata V. Method of forming a layer on a substrate to facilitate fabrication of metrology standards
US6755984B2 (en) * 2002-10-24 2004-06-29 Hewlett-Packard Development Company, L.P. Micro-casted silicon carbide nano-imprinting stamp
US20050084804A1 (en) * 2003-10-16 2005-04-21 Molecular Imprints, Inc. Low surface energy templates
US20050098534A1 (en) * 2003-11-12 2005-05-12 Molecular Imprints, Inc. Formation of conductive templates employing indium tin oxide
TWI277815B (en) * 2004-01-16 2007-04-01 Hannstar Display Corp Liquid crystal display and manufacturing method of liquid crystal display including substrate
US7140861B2 (en) * 2004-04-27 2006-11-28 Molecular Imprints, Inc. Compliant hard template for UV imprinting
US7768624B2 (en) * 2004-06-03 2010-08-03 Board Of Regents, The University Of Texas System Method for obtaining force combinations for template deformation using nullspace and methods optimization techniques
US20060067650A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method of making a reflective display device using thin film transistor production techniques
US20060266916A1 (en) * 2005-05-25 2006-11-30 Molecular Imprints, Inc. Imprint lithography template having a coating to reflect and/or absorb actinic energy
JP2007058172A (ja) * 2005-07-28 2007-03-08 Mitsubishi Electric Corp 遮光膜付き基板、カラーフィルタ基板及びこれらの製造方法、並びに遮光膜付き基板を備えた表示装置。
US8850980B2 (en) * 2006-04-03 2014-10-07 Canon Nanotechnologies, Inc. Tessellated patterns in imprint lithography

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