JP2010535937A5 - - Google Patents

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Publication number
JP2010535937A5
JP2010535937A5 JP2010516385A JP2010516385A JP2010535937A5 JP 2010535937 A5 JP2010535937 A5 JP 2010535937A5 JP 2010516385 A JP2010516385 A JP 2010516385A JP 2010516385 A JP2010516385 A JP 2010516385A JP 2010535937 A5 JP2010535937 A5 JP 2010535937A5
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JP
Japan
Prior art keywords
substrate
precursor
zinc
conductive
layer
Prior art date
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Granted
Application number
JP2010516385A
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English (en)
Japanese (ja)
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JP5684567B2 (ja
JP2010535937A (ja
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Publication date
Priority claimed from DE102007043920A external-priority patent/DE102007043920A1/de
Application filed filed Critical
Publication of JP2010535937A publication Critical patent/JP2010535937A/ja
Publication of JP2010535937A5 publication Critical patent/JP2010535937A5/ja
Application granted granted Critical
Publication of JP5684567B2 publication Critical patent/JP5684567B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010516385A 2007-07-17 2008-06-17 プリント電子部品のための機能性材料 Expired - Fee Related JP5684567B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102007033172 2007-07-17
DE102007033172.1 2007-07-17
DE102007043920A DE102007043920A1 (de) 2007-07-17 2007-09-14 Funktionelles Material für gedruckte elektronische Bauteile
DE102007043920.4 2007-09-14
PCT/EP2008/004876 WO2009010142A2 (en) 2007-07-17 2008-06-17 Organometallic zinc coumpoud for preparing zinc oxide films

Publications (3)

Publication Number Publication Date
JP2010535937A JP2010535937A (ja) 2010-11-25
JP2010535937A5 true JP2010535937A5 (https=) 2011-08-18
JP5684567B2 JP5684567B2 (ja) 2015-03-11

Family

ID=40149140

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010516385A Expired - Fee Related JP5684567B2 (ja) 2007-07-17 2008-06-17 プリント電子部品のための機能性材料

Country Status (8)

Country Link
US (1) US8367461B2 (https=)
EP (1) EP2167704B1 (https=)
JP (1) JP5684567B2 (https=)
KR (1) KR101507189B1 (https=)
CN (1) CN101743340B (https=)
DE (1) DE102007043920A1 (https=)
TW (1) TWI470115B (https=)
WO (1) WO2009010142A2 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009004491A1 (de) * 2009-01-09 2010-07-15 Merck Patent Gmbh Funktionelles Material für gedruckte elektronische Bauteile
WO2010125011A2 (de) * 2009-04-28 2010-11-04 Basf Se Verfahren zur herstellung von halbleitenden schichten
DE102010006269B4 (de) 2009-12-15 2014-02-13 Evonik Industries Ag Verfahren zur Erzeugung leitender oder halbleitender metalloxidischer Schichten auf Substraten, auf diese Weise hergestellte Substrate und deren Verwendung
JP2013514643A (ja) * 2009-12-18 2013-04-25 ビーエーエスエフ ソシエタス・ヨーロピア 機械的に可撓性のポリマー基体上に低温で溶液から処理可能な誘電体を有する金属酸化物電界効果トランジスタ
US8691168B2 (en) 2010-04-28 2014-04-08 Basf Se Process for preparing a zinc complex in solution
KR20130034662A (ko) * 2010-06-29 2013-04-05 메르크 파텐트 게엠베하 반도체막의 제조
WO2012163464A1 (en) 2011-06-01 2012-12-06 Merck Patent Gmbh Hybrid ambipolar tfts
CN104081498A (zh) * 2012-01-27 2014-10-01 默克专利有限公司 生产具有改进电导率的半导电或导电层的方法
DE102012006045A1 (de) 2012-03-27 2013-10-02 Merck Patent Gmbh Verfahren zur Herstellung elektrisch halbleitender oder leitender Schichten mit verbesserter Leitfähigkeit
DE102012001508A1 (de) 2012-01-27 2013-08-01 Merck Patent Gmbh Verfahren zur Herstellung elektrisch halbleitender oder leitender Schichten mit verbesserter Leitfähigkeit
US20130284810A1 (en) * 2012-04-25 2013-10-31 Ronald Steven Cok Electronic storage system with code circuit
KR101288106B1 (ko) * 2012-12-20 2013-07-26 (주)피이솔브 금속 전구체 및 이를 이용한 금속 전구체 잉크
EP3011373B1 (de) 2013-06-20 2017-11-15 Merck Patent GmbH Verfahren zur steuerung der optischen eigenschaften von uv-filterschichten
US10249741B2 (en) 2014-05-13 2019-04-02 Joseph T. Smith System and method for ion-selective, field effect transistor on flexible substrate
US9899325B2 (en) 2014-08-07 2018-02-20 Infineon Technologies Ag Device and method for manufacturing a device with a barrier layer

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999019900A2 (en) 1997-10-14 1999-04-22 Patterning Technologies Limited Method of forming an electronic device
JP2000133197A (ja) 1998-10-30 2000-05-12 Applied Materials Inc イオン注入装置
DE19851703A1 (de) 1998-10-30 2000-05-04 Inst Halbleiterphysik Gmbh Verfahren zur Herstellung von elektronischen Strukturen
WO2002015264A2 (de) 2000-08-18 2002-02-21 Siemens Aktiengesellschaft Verkapseltes organisch-elektronisches bauteil, verfahren zu seiner herstellung und seine verwendung
JP2003179242A (ja) 2001-12-12 2003-06-27 National Institute Of Advanced Industrial & Technology 金属酸化物半導体薄膜及びその製法
CN1388066A (zh) * 2002-06-25 2003-01-01 中国科学院长春光学精密机械与物理研究所 固相低温热分解合成晶态和非晶态超微氧化锌粉末的制备
WO2004063806A1 (de) 2003-01-09 2004-07-29 Polyic Gmbh & Co. Kg Platine oder substrat für ein organisches elektronikgerät, sowie verwendung dazu
US7253735B2 (en) 2003-03-24 2007-08-07 Alien Technology Corporation RFID tags and processes for producing RFID tags
US7265037B2 (en) * 2003-06-20 2007-09-04 The Regents Of The University Of California Nanowire array and nanowire solar cells and methods for forming the same
US6875661B2 (en) 2003-07-10 2005-04-05 International Business Machines Corporation Solution deposition of chalcogenide films
US6867081B2 (en) 2003-07-31 2005-03-15 Hewlett-Packard Development Company, L.P. Solution-processed thin film transistor formation method
GB2416428A (en) 2004-07-19 2006-01-25 Seiko Epson Corp Method for fabricating a semiconductor element from a dispersion of semiconductor particles
US7691666B2 (en) * 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US20080286907A1 (en) * 2007-05-16 2008-11-20 Xerox Corporation Semiconductor layer for thin film transistors

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