CN101743340B - 用于制备氧化锌膜的有机金属锌化合物 - Google Patents

用于制备氧化锌膜的有机金属锌化合物 Download PDF

Info

Publication number
CN101743340B
CN101743340B CN2008800248739A CN200880024873A CN101743340B CN 101743340 B CN101743340 B CN 101743340B CN 2008800248739 A CN2008800248739 A CN 2008800248739A CN 200880024873 A CN200880024873 A CN 200880024873A CN 101743340 B CN101743340 B CN 101743340B
Authority
CN
China
Prior art keywords
zinc
precursor
zinc oxide
metal
printing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008800248739A
Other languages
English (en)
Chinese (zh)
Other versions
CN101743340A (zh
Inventor
R·屈格勒
J·施奈德
R·霍夫曼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
Original Assignee
Merck Patent GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent GmbH filed Critical Merck Patent GmbH
Publication of CN101743340A publication Critical patent/CN101743340A/zh
Application granted granted Critical
Publication of CN101743340B publication Critical patent/CN101743340B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1295—Process of deposition of the inorganic material with after-treatment of the deposited inorganic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1279—Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1635—Composition of the substrate
    • C23C18/1637—Composition of the substrate metallic substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1635—Composition of the substrate
    • C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1635—Composition of the substrate
    • C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
    • C23C18/1641—Organic substrates, e.g. resin, plastic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Chemically Coating (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
CN2008800248739A 2007-07-17 2008-06-17 用于制备氧化锌膜的有机金属锌化合物 Expired - Fee Related CN101743340B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102007033172 2007-07-17
DE102007033172.1 2007-07-17
DE102007043920A DE102007043920A1 (de) 2007-07-17 2007-09-14 Funktionelles Material für gedruckte elektronische Bauteile
DE102007043920.4 2007-09-14
PCT/EP2008/004876 WO2009010142A2 (en) 2007-07-17 2008-06-17 Organometallic zinc coumpoud for preparing zinc oxide films

Publications (2)

Publication Number Publication Date
CN101743340A CN101743340A (zh) 2010-06-16
CN101743340B true CN101743340B (zh) 2012-02-29

Family

ID=40149140

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008800248739A Expired - Fee Related CN101743340B (zh) 2007-07-17 2008-06-17 用于制备氧化锌膜的有机金属锌化合物

Country Status (8)

Country Link
US (1) US8367461B2 (https=)
EP (1) EP2167704B1 (https=)
JP (1) JP5684567B2 (https=)
KR (1) KR101507189B1 (https=)
CN (1) CN101743340B (https=)
DE (1) DE102007043920A1 (https=)
TW (1) TWI470115B (https=)
WO (1) WO2009010142A2 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009004491A1 (de) * 2009-01-09 2010-07-15 Merck Patent Gmbh Funktionelles Material für gedruckte elektronische Bauteile
WO2010125011A2 (de) * 2009-04-28 2010-11-04 Basf Se Verfahren zur herstellung von halbleitenden schichten
DE102010006269B4 (de) 2009-12-15 2014-02-13 Evonik Industries Ag Verfahren zur Erzeugung leitender oder halbleitender metalloxidischer Schichten auf Substraten, auf diese Weise hergestellte Substrate und deren Verwendung
JP2013514643A (ja) * 2009-12-18 2013-04-25 ビーエーエスエフ ソシエタス・ヨーロピア 機械的に可撓性のポリマー基体上に低温で溶液から処理可能な誘電体を有する金属酸化物電界効果トランジスタ
US8691168B2 (en) 2010-04-28 2014-04-08 Basf Se Process for preparing a zinc complex in solution
KR20130034662A (ko) * 2010-06-29 2013-04-05 메르크 파텐트 게엠베하 반도체막의 제조
WO2012163464A1 (en) 2011-06-01 2012-12-06 Merck Patent Gmbh Hybrid ambipolar tfts
CN104081498A (zh) * 2012-01-27 2014-10-01 默克专利有限公司 生产具有改进电导率的半导电或导电层的方法
DE102012006045A1 (de) 2012-03-27 2013-10-02 Merck Patent Gmbh Verfahren zur Herstellung elektrisch halbleitender oder leitender Schichten mit verbesserter Leitfähigkeit
DE102012001508A1 (de) 2012-01-27 2013-08-01 Merck Patent Gmbh Verfahren zur Herstellung elektrisch halbleitender oder leitender Schichten mit verbesserter Leitfähigkeit
US20130284810A1 (en) * 2012-04-25 2013-10-31 Ronald Steven Cok Electronic storage system with code circuit
KR101288106B1 (ko) * 2012-12-20 2013-07-26 (주)피이솔브 금속 전구체 및 이를 이용한 금속 전구체 잉크
EP3011373B1 (de) 2013-06-20 2017-11-15 Merck Patent GmbH Verfahren zur steuerung der optischen eigenschaften von uv-filterschichten
US10249741B2 (en) 2014-05-13 2019-04-02 Joseph T. Smith System and method for ion-selective, field effect transistor on flexible substrate
US9899325B2 (en) 2014-08-07 2018-02-20 Infineon Technologies Ag Device and method for manufacturing a device with a barrier layer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1388066A (zh) * 2002-06-25 2003-01-01 中国科学院长春光学精密机械与物理研究所 固相低温热分解合成晶态和非晶态超微氧化锌粉末的制备

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999019900A2 (en) 1997-10-14 1999-04-22 Patterning Technologies Limited Method of forming an electronic device
JP2000133197A (ja) 1998-10-30 2000-05-12 Applied Materials Inc イオン注入装置
DE19851703A1 (de) 1998-10-30 2000-05-04 Inst Halbleiterphysik Gmbh Verfahren zur Herstellung von elektronischen Strukturen
WO2002015264A2 (de) 2000-08-18 2002-02-21 Siemens Aktiengesellschaft Verkapseltes organisch-elektronisches bauteil, verfahren zu seiner herstellung und seine verwendung
JP2003179242A (ja) 2001-12-12 2003-06-27 National Institute Of Advanced Industrial & Technology 金属酸化物半導体薄膜及びその製法
WO2004063806A1 (de) 2003-01-09 2004-07-29 Polyic Gmbh & Co. Kg Platine oder substrat für ein organisches elektronikgerät, sowie verwendung dazu
US7253735B2 (en) 2003-03-24 2007-08-07 Alien Technology Corporation RFID tags and processes for producing RFID tags
US7265037B2 (en) * 2003-06-20 2007-09-04 The Regents Of The University Of California Nanowire array and nanowire solar cells and methods for forming the same
US6875661B2 (en) 2003-07-10 2005-04-05 International Business Machines Corporation Solution deposition of chalcogenide films
US6867081B2 (en) 2003-07-31 2005-03-15 Hewlett-Packard Development Company, L.P. Solution-processed thin film transistor formation method
GB2416428A (en) 2004-07-19 2006-01-25 Seiko Epson Corp Method for fabricating a semiconductor element from a dispersion of semiconductor particles
US7691666B2 (en) * 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US20080286907A1 (en) * 2007-05-16 2008-11-20 Xerox Corporation Semiconductor layer for thin film transistors

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1388066A (zh) * 2002-06-25 2003-01-01 中国科学院长春光学精密机械与物理研究所 固相低温热分解合成晶态和非晶态超微氧化锌粉末的制备

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
A. J. Petrella等.Single-Source Chemical Vapor Deposition Growth of ZnO Thin Films Using Zn4O(CO2NEt2)6.《Chem. Mater.》.2002,第14卷(第10期),第4339-4342页. *
Matthew R. Hill等.Towards new precursors for ZnO thin films by single source CVD: the X-ray structures and precursor properties of zinc ketoacidoximates.《inorganica chimica acta》.2005,第358卷(第1期),第201-206页. *
Y. S. Wang等.Nanocrystalline ZnO with Ultraviolet Luminescence.《J. Phys. Chem. B》.2006,第110卷(第9期),第4099-4104页. *

Also Published As

Publication number Publication date
JP5684567B2 (ja) 2015-03-11
CN101743340A (zh) 2010-06-16
JP2010535937A (ja) 2010-11-25
WO2009010142A2 (en) 2009-01-22
US20100181564A1 (en) 2010-07-22
WO2009010142A3 (en) 2009-02-19
DE102007043920A1 (de) 2009-01-22
EP2167704A2 (en) 2010-03-31
TW200927987A (en) 2009-07-01
US8367461B2 (en) 2013-02-05
KR101507189B1 (ko) 2015-03-30
EP2167704B1 (en) 2018-10-24
TWI470115B (zh) 2015-01-21
KR20100044214A (ko) 2010-04-29

Similar Documents

Publication Publication Date Title
CN101743340B (zh) 用于制备氧化锌膜的有机金属锌化合物
CN104530815B (zh) 用于印刷电子部件的功能材料
US7507618B2 (en) Method for making electronic devices using metal oxide nanoparticles
US9059299B2 (en) Method for producing high-performing and electrically stable semi-conductive metal oxide layers, layers produced according to the method and use thereof
US8969871B2 (en) Field-effect transistor, processes for producing the same, and electronic device using the same
JP5640323B2 (ja) 金属酸化物半導体の製造方法、金属酸化物半導体および薄膜トランジスタ
CN104081498A (zh) 生产具有改进电导率的半导电或导电层的方法
US8691168B2 (en) Process for preparing a zinc complex in solution
JP2010147206A (ja) 薄膜トランジスタ、及びその製造方法
KR101069613B1 (ko) 저온 공정이 가능한 용액 공정용 산화물 반도체를 위한 결정화 제어 방법
JP2010040741A (ja) 電子デバイス用の絶縁膜形成方法、電子デバイスの製造方法、薄膜トランジスタの製造方法、絶縁膜、電子デバイス及び薄膜トランジスタ
KR101829931B1 (ko) 기판 상에 전도성 또는 반－전도성 금속 산화물 층을 생성시키는 방법, 및 상기 방식으로 제조된 기판
EP1763898A2 (en) Field-effect transistors fabricated by wet chemical deposition
JP2006013182A (ja) 有機トランジスタ

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120229

Termination date: 20200617

CF01 Termination of patent right due to non-payment of annual fee