JP2010535405A - 薄層型光電池の背面コンタクト形成方法 - Google Patents
薄層型光電池の背面コンタクト形成方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 73
- 239000011521 glass Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000010409 thin film Substances 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000007639 printing Methods 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000001459 lithography Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052711 selenium Inorganic materials 0.000 claims description 2
- 239000011669 selenium Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 13
- 238000005516 engineering process Methods 0.000 abstract description 12
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
【解決手段】 Si元素、並びにCIGSのような薄膜電池から構成される薄層型光電池の背面コンタクトの形成方法が提供される。この方法は、薄いn型ドープSi層及びn型ドープSi層の上部に接合された薄いp型ドープSi層から成るp−n接合部を準備するステップと、p−n接合部をガラス基板に接合するステップと、構造化された薄いp型ドープSi層及び薄いn型ドープSi層の上にコンタクト・ポイントを準備するステップと、構造化された薄いp型ドープSi層及び薄いn型ドープSi層の上にコンタクト・ピンを形成するステップとを含む。
【選択図】 図2
Description
加工材料:
シリコン電池の場合には、薄層は、数μmの層の単結晶を切断する技術によって実現され、それらを互いに接合する。これは、半導体産業において確立されている周知の技術である。
p型ドープ:15−20Ωcm
n型ドープ:1.5−2Ωcm
上記の例の場合、
p型インゴット:>4.5k プロセス・ステップ
n型インゴット:>4.5k プロセス・ステップ
背面コネクタ・パッドを実現するために、いくつかの方法を用いることができる。1つは、図5(A)に示されるように、モジュール44のガラス縁部に沿ったコンタクト・ホール42を用いることである。ホール42は、コンタクト金属46で充填される。次のステップは、基板の活性側上でのモリブデン(Mo)48の堆積である。その後、コンタクト・パッド50(金属としてAl、Cuなどを用いた金属パッド)が、それ以外の部分のガラス基板表面をスパッタ材料から保護するためにハード・マスクを用いて、背面上にスパッタ又はプリントされる。スパッタされた材料は、ホール内の金属と接触し、背面コンタクトを確保する。
Claims (15)
- Si元素から構成される超薄層型光電池の背面コンタクト形成方法であって、
薄いn型ドープSi層(4)及び前記n型ドープSi層(4)の上部に接合された薄いp型ドープSi層(2)から成るp−n接合部を準備するステップと、
前記p−n接合部をガラス基板(6)に接合するステップと、
構造化された薄いp型ドープSi層(2)及び前記薄いn型ドープSi層(4)の上にコンタクト・ポイントを準備するステップと、
前記構造化された薄いp型ドープSi層(2)及び前記薄いn型ドープSi層(4)の上にコンタクト・ピン(18、20)を形成するステップと
によって特徴付けられる方法。 - 前記Si元素がインゴット又はウェハである、請求項1に記載の方法。
- 前記層が20μm以下の厚さを有する、請求項1又は請求項2に記載の方法。
- 前記薄いp型ドープSi層(2)は、薄いn型ドープSi層(4)へのアクセスを確保するためにコンタクト・ホール(8)を含む、請求項1から請求項3のいずれか1項に記載の方法。
- 前記p−n接合部は、n勾配を有するpn層(26、28)から成る、請求項1から請求項4のいずれか1項に記載の方法。
- 前記コンタクト・ピン(18、20)が、標準リソグラフィ、ハード・マスク又はプリント技術を含むシード層技術を用いて配置される、前記請求項のいずれか1項に記載の方法。
- 前記方法が、前記電池を直列化して列とし、このように連結した列を並列化するステップをさらに含む、前記請求項のいずれか1項に記載の方法。
- 前記方法が、前記電池を光電池モジュールの前面ガラスの上に配置するステップをさらに含む、前記請求項のいずれか1項に記載の方法。
- 薄膜元素から構成される超薄層型光電池の背面コンタクト形成方法であって、
前記薄膜をガラス基板(44)の上に接合し、それによって前記基板の活性側を形成するステップと、
前記ガラス基板(44)の背(不動態)面上にコンタクト・パッド(50)を形成するステップと、
前記薄膜と前記背面とを電気的に接続するステップと
によって特徴付けられる方法。 - 前記薄膜元素は、銅・インジウム・ガリウム・セレン(CIGS)元素から構成される、請求項9に記載の方法。
- 前記電気的に接続するステップは、前記ガラス基板(44)の縁部に沿ってコンタクト・ホール(42)を配列し、前記ホール(42)を導電性金属(46)で充填し、前記基板(44)の活性側の上にモリブデン層(48)を形成することによって行われる、請求項9又は請求項10に記載の方法。
- 前記電気的に接続するステップは、前記薄膜の堆積の前に、前記ガラス基板(54)の縁部の上にコンタクト・バー(52、56)を接着することによって行われる、請求項9又は請求項10に記載の方法。
- 前記電気的に接続するステップは、前記薄膜の堆積の前に、前記ガラス基板(54)の2つの対向する縁部の上にコンタクト・バー(60)を配置し、前記バーを配線コンタクト・ストリップ(58)により接続することによって行われる、請求項9又は請求項10に記載の方法。
- Si元素から構成される超薄層型光電池であって、前記電池は背面コンタクトを有する、電池。
- 薄膜元素から構成される超薄層型光電池であって、前記電池は背面コンタクトを有する、電池。
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PCT/EP2008/054205 WO2008141863A2 (en) | 2007-05-24 | 2008-04-08 | Backside contacting on thin layer photovoltaic cells |
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US8772079B2 (en) * | 2007-05-24 | 2014-07-08 | International Business Machines Corporation | Backside contacting on thin layer photovoltaic cells |
US9941435B2 (en) * | 2011-07-01 | 2018-04-10 | Sunpower Corporation | Photovoltaic module and laminate |
US9379259B2 (en) * | 2012-11-05 | 2016-06-28 | International Business Machines Corporation | Double layered transparent conductive oxide for reduced schottky barrier in photovoltaic devices |
CN108231936A (zh) * | 2016-12-20 | 2018-06-29 | 北京汉能创昱科技有限公司 | 一种太阳能电池组件及其制备方法 |
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Also Published As
Publication number | Publication date |
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US20100132760A1 (en) | 2010-06-03 |
US8772079B2 (en) | 2014-07-08 |
JP5501225B2 (ja) | 2014-05-21 |
WO2008141863A3 (en) | 2009-03-05 |
WO2008141863A2 (en) | 2008-11-27 |
TW200849620A (en) | 2008-12-16 |
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