JP2010535395A - 動的に調整可能なソフトプログラム検証電圧レベルを有する不揮発性メモリおよびそのための方法 - Google Patents

動的に調整可能なソフトプログラム検証電圧レベルを有する不揮発性メモリおよびそのための方法 Download PDF

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Publication number
JP2010535395A
JP2010535395A JP2010520016A JP2010520016A JP2010535395A JP 2010535395 A JP2010535395 A JP 2010535395A JP 2010520016 A JP2010520016 A JP 2010520016A JP 2010520016 A JP2010520016 A JP 2010520016A JP 2010535395 A JP2010535395 A JP 2010535395A
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Japan
Prior art keywords
voltage level
block
soft
soft program
program
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JP2010520016A
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English (en)
Japanese (ja)
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JP2010535395A5 (OSRAM
Inventor
ケイ． エグチ、リチャード
エス． チョイ、ジョン
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NXP USA Inc
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NXP USA Inc
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Application filed by NXP USA Inc filed Critical NXP USA Inc
Publication of JP2010535395A publication Critical patent/JP2010535395A/ja
Publication of JP2010535395A5 publication Critical patent/JP2010535395A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
JP2010520016A 2007-07-31 2008-06-17 動的に調整可能なソフトプログラム検証電圧レベルを有する不揮発性メモリおよびそのための方法 Pending JP2010535395A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/831,168 US7649782B2 (en) 2007-07-31 2007-07-31 Non-volatile memory having a dynamically adjustable soft program verify voltage level and method therefor
PCT/US2008/067222 WO2009017889A1 (en) 2007-07-31 2008-06-17 Non-volatile memory having a dynamically adjustable soft program verify voltage level and method therefor

Publications (2)

Publication Number Publication Date
JP2010535395A true JP2010535395A (ja) 2010-11-18
JP2010535395A5 JP2010535395A5 (OSRAM) 2011-07-21

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JP2010520016A Pending JP2010535395A (ja) 2007-07-31 2008-06-17 動的に調整可能なソフトプログラム検証電圧レベルを有する不揮発性メモリおよびそのための方法

Country Status (5)

Country Link
US (1) US7649782B2 (OSRAM)
JP (1) JP2010535395A (OSRAM)
KR (1) KR101206178B1 (OSRAM)
TW (1) TWI457928B (OSRAM)
WO (1) WO2009017889A1 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014044786A (ja) * 2012-08-28 2014-03-13 Freescale Semiconductor Inc ソフトプログラミングを使用する不揮発性メモリ（ｎｖｍ）

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8391070B2 (en) * 2008-12-02 2013-03-05 Spansion Llc Moving program verify level for programming of memory
US7483311B2 (en) * 2006-02-07 2009-01-27 Micron Technology, Inc. Erase operation in a flash memory device
US8189396B2 (en) 2006-12-14 2012-05-29 Mosaid Technologies Incorporated Word line driver in a hierarchical NOR flash memory
NZ562200A (en) * 2007-10-04 2008-11-28 Arc Innovations Ltd Method and system for updating a stored data value in a non-volatile memory
US8755229B1 (en) 2009-06-23 2014-06-17 Micron Technology, Inc. Limiting flash memory over programming
JP2011164994A (ja) * 2010-02-10 2011-08-25 Toshiba Corp メモリシステム
US8482987B2 (en) 2010-09-02 2013-07-09 Macronix International Co., Ltd. Method and apparatus for the erase suspend operation
US8427877B2 (en) * 2011-02-11 2013-04-23 Freescale Semiconductor, Inc. Digital method to obtain the I-V curves of NVM bitcells
US8526240B2 (en) * 2011-08-17 2013-09-03 Ememory Technology Inc. Flash memory and memory cell programming method thereof
CN104011800B (zh) * 2011-12-28 2017-03-08 英特尔公司 用于非易失性存储器阵列的存储器单元的循环耐久性延展
US8929142B2 (en) 2013-02-05 2015-01-06 Sandisk Technologies Inc. Programming select gate transistors and memory cells using dynamic verify level
US8995198B1 (en) 2013-10-10 2015-03-31 Spansion Llc Multi-pass soft programming
GB201322075D0 (en) 2013-12-13 2014-01-29 Ibm Device for selecting a level for at least one read voltage
US20150270004A1 (en) * 2014-03-20 2015-09-24 Elite Semiconductor Memory Technology Inc. Method for Performing Erase Operation in Non-Volatile Memory
CN105006252A (zh) * 2014-04-17 2015-10-28 晶豪科技股份有限公司 抹除非易失性存储器的方法
US10825529B2 (en) 2014-08-08 2020-11-03 Macronix International Co., Ltd. Low latency memory erase suspend operation
US9401217B2 (en) 2014-08-27 2016-07-26 Freescale Semiconductor, Inc. Flash memory with improved read performance
US10365859B2 (en) 2014-10-21 2019-07-30 International Business Machines Corporation Storage array management employing a merged background management process
US9563373B2 (en) 2014-10-21 2017-02-07 International Business Machines Corporation Detecting error count deviations for non-volatile memory blocks for advanced non-volatile memory block management
US9990279B2 (en) 2014-12-23 2018-06-05 International Business Machines Corporation Page-level health equalization
US10339048B2 (en) 2014-12-23 2019-07-02 International Business Machines Corporation Endurance enhancement scheme using memory re-evaluation
KR102452994B1 (ko) * 2016-09-06 2022-10-12 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 동작 방법
US10269439B2 (en) * 2017-03-28 2019-04-23 Western Digital Technologies, Inc. Post write erase conditioning
KR102569820B1 (ko) * 2018-10-25 2023-08-24 에스케이하이닉스 주식회사 메모리 컨트롤러 및 그 동작 방법
CN111863089B (zh) * 2019-04-24 2022-07-19 华邦电子股份有限公司 存储器装置及非易失性存储器的控制方法
US11705206B2 (en) 2021-08-17 2023-07-18 Sandisk Technologies Llc Modifying program and erase parameters for single-bit memory cells to improve single-bit/multi-bit hybrid ratio
US12386515B2 (en) * 2023-02-15 2025-08-12 Micron Technology, Inc. Modification of program voltage level with read or program-verify adjustment for improving reliability in memory devices

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002025279A (ja) * 2000-07-05 2002-01-25 Sharp Corp 不揮発性半導体メモリ装置の消去方法
JP2003242787A (ja) * 2002-02-14 2003-08-29 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP2007102923A (ja) * 2005-10-04 2007-04-19 Toshiba Corp 不揮発性半導体記憶装置およびそのデータ消去方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5521867A (en) * 1993-12-01 1996-05-28 Advanced Micro Devices, Inc. Adjustable threshold voltage conversion circuit
US5963477A (en) 1997-12-09 1999-10-05 Macronix International Co., Ltd. Flash EPROM erase algorithm with wordline level retry
US6496417B1 (en) * 1999-06-08 2002-12-17 Macronix International Co., Ltd. Method and integrated circuit for bit line soft programming (BLISP)
JP3802763B2 (ja) 2001-01-29 2006-07-26 シャープ株式会社 不揮発性半導体メモリ装置およびその消去方法
US6614695B2 (en) 2001-08-24 2003-09-02 Micron Technology, Inc. Non-volatile memory with block erase
US6684173B2 (en) * 2001-10-09 2004-01-27 Micron Technology, Inc. System and method of testing non-volatile memory cells
US7073103B2 (en) * 2002-12-05 2006-07-04 Sandisk Corporation Smart verify for multi-state memories
US7230854B2 (en) * 2005-08-01 2007-06-12 Sandisk Corporation Method for programming non-volatile memory with self-adjusting maximum program loop

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002025279A (ja) * 2000-07-05 2002-01-25 Sharp Corp 不揮発性半導体メモリ装置の消去方法
JP2003242787A (ja) * 2002-02-14 2003-08-29 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP2007102923A (ja) * 2005-10-04 2007-04-19 Toshiba Corp 不揮発性半導体記憶装置およびそのデータ消去方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014044786A (ja) * 2012-08-28 2014-03-13 Freescale Semiconductor Inc ソフトプログラミングを使用する不揮発性メモリ（ｎｖｍ）

Also Published As

Publication number Publication date
US7649782B2 (en) 2010-01-19
TWI457928B (zh) 2014-10-21
KR20100053539A (ko) 2010-05-20
WO2009017889A1 (en) 2009-02-05
US20090034339A1 (en) 2009-02-05
KR101206178B1 (ko) 2012-11-29
TW200910350A (en) 2009-03-01

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