JP2010524223A - 太陽電池で機能化された表面を有するセラミックタイル - Google Patents
太陽電池で機能化された表面を有するセラミックタイル Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 22
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 76
- 238000000034 method Methods 0.000 claims description 21
- 239000004020 conductor Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 9
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
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- 229910052802 copper Inorganic materials 0.000 claims description 2
- 210000003298 dental enamel Anatomy 0.000 claims description 2
- 229920002313 fluoropolymer Polymers 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 2
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- 239000010936 titanium Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LCKIEQZJEYYRIY-UHFFFAOYSA-N Titanium ion Chemical compound [Ti+4] LCKIEQZJEYYRIY-UHFFFAOYSA-N 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
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- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- 238000002844 melting Methods 0.000 description 1
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- 238000002207 thermal evaporation Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S20/00—Supporting structures for PV modules
- H02S20/20—Supporting structures directly fixed to an immovable object
- H02S20/22—Supporting structures directly fixed to an immovable object specially adapted for buildings
- H02S20/23—Supporting structures directly fixed to an immovable object specially adapted for buildings specially adapted for roof structures
- H02S20/25—Roof tile elements
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
セラミック基材本体2の製造物は、3〜6質量%の湿分を含む必要がある、セラミックタイルに概して用いられるアトマイズセラミック粉の乾式プレスによって得られる。プレスは35MPa〜60MPaの圧力で行われる。プレス操作は、電気部品及び/または電子部品を含むデバイス4を収容するための凹部を表面2b上に形成するダイを用いることができる。
この第2例において作られたセラミックタイルは、活性層の複合体7の組成及びそれらの製造に関して、例1によって作られたタイルと異なる。
Claims (12)
- 少なくとも1つの太陽電池を含むタイル(1)であって、0.5質量%以下の吸水率を有するセラミック基材本体(2);該セラミック基材本体(2)の第1表面(2a)上に直接適用された太陽電池(3);該セラミック基材本体(2)の第2表面(2b)に適用された電気部品及び/または電子部品を含むデバイス(4);及び該セラミック基材本体を通じて電気部品及び/または電子部品を含む該デバイス(4)に、該太陽電池(3)を電気的に接続するように設計された電気コネクタ(5)、を含むことを特徴とする、タイル(1)。
- 該太陽電池(3)が、該セラミック支持体(2)の該第1表面(2a)上に直接配置された導電性材料の層(6)、複数の活性層(7)、及び好ましくは格子状構造を有する導電性材料の層(9)を含み;
該複数の活性層(7)が連続してn型の層(11)、光活性層(12)、及びp型の層(13)を含むことを特徴とする、
請求項1に記載のタイル。 - 該太陽電池(3)が、該活性層(7)と該導電性材料の層(9)との間に透明導電層(8)を含むことを特徴とする、請求項2に記載のタイル。
- 該太陽電池(3)が、ガラス状エナメル、ポリカーボネート、フッ素化ポリマー、ポリクロロトリフルオロエチレン(PCTFE)、及びポリメチルメタクリレートとポリビニルフルオライドとの組み合わせによって構成される群に含まれる材料の1つから形成される保護層(10)によって、被覆され、絶縁され、及び封止されていることを特徴とする、請求項3に記載のタイル。
- 該導電性材料の層(6)がAgまたはAg−Alによって構成され、該n型の層(11)がn型にドープされたアモルファスシリコンによって構成され、該光活性層(12)が真性シリコンによって構成され、該p型の層(13)がp型にドープされたアモルファスシリコンによって構成され、該透明導電層(8)がITOまたはFTOによって構成され、及び導電性材料の層(9)がAgによって構成されていることを特徴とする、請求項3または4に記載のタイル。
- 該導電性材料の層(6)が、ITO、ZnO、Ag、Ag−Al、及びMoによって構成される群に含まれる材料によって構成され、該n型の層(11)がTiO2成形体によって構成され、該光活性層(12)がTiO2と一般的な実験式(IIIB)(IVA)(VIA)2の化合物との混合物によって構成され、該p型の層(13)が一般的な実験式(IIIB)(IVA)(VIA)2の化合物によって構成され、該透明導電層(8)がITOによって構成され、並びに該導電性材料の層(9)がAgによって構成されていることを特徴とし;
IBがCu、Ag、Auによって構成される群に含まれる元素の1つであり;
IIIAがAl、Ga、In、Tiによって構成される群に含まれる元素の1つであり;
VIAがS、Se、Teによって構成される群に含まれる元素の1つである、
請求項3または4に記載のタイル。 - 該一般的な実験式(IIIB)(IVA)(VIA)2の化合物がCuInS2であることを特徴とする、請求項6に記載のタイル。
- 3質量%〜6質量%の湿分を有するアトマイズセラミック粉が、35MPa〜60MPaの圧力のプレス操作、乾燥操作、及び1100℃〜1250℃の最高温度の焼成操作を連続して受けることによって、セラミック基材本体(2)を得ることを特徴とする、請求項1〜7のいずれか一項に記載のタイルの製造方法。
- 該セラミック基材本体(2)の表面(2a)上への太陽電池(3)の形成工程を含むことを特徴とする、請求項8に記載の方法であって、
該太陽電池(3)の該形成工程が、前もって形成した材料をそれぞれの機能層(6、8、9、11、12、13)を製造するために堆積する、複数の堆積操作を含む、
方法。 - 該堆積操作のそれぞれが、シルクスクリーン印刷、シリコーンローラーを用いた印刷、ドクターブレード技法、インクジェット印刷、またはスパッタリングを含む技法によって得られることを特徴とする、請求項9記載の方法。
- アモルファスシリコンの該活性層(11、12、13)の該堆積操作が、CVD(化学気相成長)法を用いて得られることを特徴とする、請求項8〜10のいずれか一項に記載の方法。
- アモルファスシリコンの該活性層(11、12、13)の該堆積操作が、プラズマ強化CVDまたはラジオ周波数CVD法を用いて得られることを特徴とする、請求項11に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/IT2007/000241 WO2008120251A1 (en) | 2007-03-30 | 2007-03-30 | Ceramic tile with surface functionalized with photovoltaic cells |
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JP2010524223A true JP2010524223A (ja) | 2010-07-15 |
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JP2010501671A Pending JP2010524223A (ja) | 2007-03-30 | 2007-03-30 | 太陽電池で機能化された表面を有するセラミックタイル |
Country Status (8)
Country | Link |
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US (1) | US8367456B2 (ja) |
EP (1) | EP2140501A1 (ja) |
JP (1) | JP2010524223A (ja) |
CN (1) | CN101755343B (ja) |
AU (1) | AU2007350532A1 (ja) |
BR (1) | BRPI0721426A2 (ja) |
MX (1) | MX2009010480A (ja) |
WO (1) | WO2008120251A1 (ja) |
Cited By (1)
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JP2015502044A (ja) * | 2011-11-20 | 2015-01-19 | ソレクセル、インコーポレイテッド | スマート光電池およびモジュール |
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US8511006B2 (en) * | 2009-07-02 | 2013-08-20 | Owens Corning Intellectual Capital, Llc | Building-integrated solar-panel roof element systems |
IT1400465B1 (it) | 2010-06-08 | 2013-05-31 | Siti B & T Group Spa | Elemento per parete ventilata. |
US8782972B2 (en) | 2011-07-14 | 2014-07-22 | Owens Corning Intellectual Capital, Llc | Solar roofing system |
CN110137285A (zh) * | 2018-02-08 | 2019-08-16 | 光之科技发展(昆山)有限公司 | 一种用于建筑领域的太阳电池组件及其制备方法 |
CN110690304A (zh) * | 2018-07-05 | 2020-01-14 | 张伟 | 一种含阻挡层的光伏瓷砖及其制备方法 |
CN110690303A (zh) * | 2018-07-05 | 2020-01-14 | 张伟 | 一种提高转换效率的光伏瓷砖及其制备方法 |
CN111146301A (zh) * | 2018-11-02 | 2020-05-12 | 光之科技(北京)有限公司 | 一种光伏建材及其制备方法 |
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2007
- 2007-03-30 CN CN2007800530928A patent/CN101755343B/zh not_active Expired - Fee Related
- 2007-03-30 JP JP2010501671A patent/JP2010524223A/ja active Pending
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JP2015502044A (ja) * | 2011-11-20 | 2015-01-19 | ソレクセル、インコーポレイテッド | スマート光電池およびモジュール |
Also Published As
Publication number | Publication date |
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EP2140501A1 (en) | 2010-01-06 |
CN101755343A (zh) | 2010-06-23 |
WO2008120251A8 (en) | 2009-11-05 |
AU2007350532A1 (en) | 2008-10-09 |
WO2008120251A1 (en) | 2008-10-09 |
MX2009010480A (es) | 2010-03-30 |
CN101755343B (zh) | 2012-05-30 |
US8367456B2 (en) | 2013-02-05 |
BRPI0721426A2 (pt) | 2013-01-08 |
US20100126564A1 (en) | 2010-05-27 |
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