CN110137285A - 一种用于建筑领域的太阳电池组件及其制备方法 - Google Patents
一种用于建筑领域的太阳电池组件及其制备方法 Download PDFInfo
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- CN110137285A CN110137285A CN201810128516.2A CN201810128516A CN110137285A CN 110137285 A CN110137285 A CN 110137285A CN 201810128516 A CN201810128516 A CN 201810128516A CN 110137285 A CN110137285 A CN 110137285A
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Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
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Abstract
本发明公开了一种用于建筑领域的太阳电池组件及其制备方法,所述太阳电池组件包括基底、发电层和保护层;所述发电层设置在基底上,所述保护层覆盖于发电层上;所述基底为玻璃、金属板、水泥基板材、柔性塑料薄膜、瓷砖和瓦片;所述保护层在300nm~1300nm波长范围内加权平均透过率为0~79%。本发明制备太阳电池组件的方法,包括如下的步骤:1)对基底的表面进行清洁处理;2)将太阳电池附着到基体之上,并引出正负极;3)最后在太阳电池之上涂覆一层保护层。本发明的太阳电池组件易于规模批量化生产,且具有极大的成本优势。
Description
技术领域
本发明属于建筑领域,具体涉及一种用于建筑领域的太阳电池组件及其制备方法。
背景技术
随着社会的不断发展,人类对能源的需求也不断递增,而全球化石燃料逐渐枯竭,环境污染日益严重。发展清洁可再生能源已经成为人类社会的共识。
但是,受限于现有技术工艺的限制,太阳电池并不能同其安装的建筑环境进行适宜的融合,一方面,太阳电池的安装往往会改变或增添原有建筑的外部结构或附加设施;另一方面,本身的安装也会影响建筑体本身的艺术价值和人文美观。
中国实用新型专利CN2730982Y公开了一种太阳能瓷砖,其技术方案为在陶瓷工业用无机坯土的表面,涂布玻璃质涂料剂,烧结形成瓷砖的基底;在上述瓷砖基底的表面设计有能进行光电转换的发电层;在上述发电层的上下表面设计有透明导电膜;通过上面所述的透明导电膜,可将在上述发电层上产生的电流加以利用的供电部件。其发电层为具有n型硅层-i型硅层-p型硅层结构或p型硅层-i型硅层-n型硅层结构的硅层;其玻璃质涂料剂可以是磷·硅酸盐玻璃或硼·硅酸盐玻璃,且为了防止太阳光的反射,在上述透明导电膜的上面形成含有氧化钛和氧化硅的防反射保护膜。
然而,上述的太阳能瓷砖存在如下的缺陷:1.由于硅基太阳电池容易受到环境的影响,一般在光伏领域,需要选取特殊的高分子材料进行封装后才能在户外进行使用,而该瓷砖的透明导电膜外加防反射保护膜很难起到保护电池的作用,达不到光伏行业相关标准;2.上述的表面抗反射保护膜是一种透明材料,因此绝大部分光线将直接入射到电池表面,反射出来的颜色将是电池本身的色彩,单一且无法形成建筑外表的质感。
中国发明专利CN101755343A公开了一种用于制备含有光伏电池的瓷砖的方法,所述方法依次包括以下步骤:
制备陶瓷基体(2),所述陶瓷基体具有一个或多个通孔(2c)并且吸水性等于或小于0.5wt%,该步骤包括:
压制操作,其中在35到60MPa之间的压力下对湿度在3wt%到6wt%之间的雾化陶瓷粉实施压制操作,
干燥操作,以及烘焙操作,进行所述烘焙操作的最大温度在1100℃到1250℃之间;以及在所述陶瓷基体(2)的表面(2a)上直接沉积由Ag或Ag-Al制成的导电层(6),多个活性层(7),具有栅格状结构的导电材料层(9),以及保护层(10),所述保护层(10)被设计成确保太阳辐射的高透射性、抗湿性和耐候性、紫外线稳定性、以及电绝缘性,所述多个活性层(7)依次包括n型层(11)、光敏层(12)和p型层(13);将导电连接件(5)容置在所述通孔(2c)中,使所述导电连接件(5)与所述导电层(6)电接触;以及在所述陶瓷基体(2)的与所述表面(2a)相对的表面(2b)。其接受太阳光入射一侧的保护层包括以下材料之一:搪瓷、聚碳酸酯、氟化聚合物、聚三氟氯乙烯、以及聚甲基丙烯酸甲酯和聚氟乙烯的组合。其保护层存在如下的缺陷:
1)所述的光伏电池需要采用CVD法,优选等离子增强CVD法(PECVD)沉积到陶瓷基体之上,而性能较优的光伏电池往往需要较高的成膜条件,对于陶瓷基体材料显然很难直接在真空条件下成膜,尽管其含水量不大于0.5wt%,也会成为制备高性能光伏电池的关键障碍;
2)所述的保护层选用搪瓷时,由于搪瓷的烧成温度为500-900摄氏度,即使选择较低的温度在表面形成一个透明的搪瓷层,其也会对发电层造成不可逆转的损坏。
3)在形成的保护层较薄时,电极层的颜色也会暴露出来,这使得光伏电池和周围环境极为不配合,进而限制了其使用环境。而其他有机高分子材料则在长时间的户外环境中容易老化,导致其光线透过率、防水性能下降,严重影响其发电效率,甚至存在脱落建筑表面的风险,从而导致电极层底色露出。
发明内容
针对现有技术中光伏电池存在的各种缺陷,本发明的目的是提供一种用于建筑领域的太阳电池组件,该太阳电池组件的基底选择更为灵活,并且通过对保护层材料成分的改进,使得太阳电池组件可以和环境更为融合,并在现实中有广泛的应用范围。
本发明首先提供了一种用于建筑领域的太阳电池组件,所述太阳电池组件包括基底、发电层和保护层;
所述发电层设置在基底上,所述封装层覆盖于发电层上;
所述基底为玻璃、金属板、水泥基板材、塑料薄膜、瓷砖或瓦片;
所述保护层在300nm-1300nm波长上加权平均透过率为0-79%。
作为上述太阳电池组件一种更好的选择,所述基底可以具有0.01mm~5cm的厚度。当然,作为其进一步的优选,当基底的厚度为0.01mm~0.5mm时,可以制备获得轻柔弯曲的太阳电池组件。当其基底为厚度为0.5mm~5cm时,可以制得用于常规或者特种用途的太阳电池。
作为上述太阳电池组件一种更好的选择,所述发电层具所述发电层具有铜铟镓硒(CIGS)薄膜太阳电池、砷化镓(GaAs)太阳电池、晶体硅太阳电池、硅基薄膜太阳电池、碲化镉(CdTe)薄膜太阳电池、有机太阳电池(OPV)、铜锌锡硫(CZTS)薄膜太阳电池或钙钛矿薄膜太阳电池的结构。
对于上述太阳电池组件而言,光的透过率即使不高于79%,太阳电池也可以产生电流。特别的,对于透过率极低时,也可以产生电流。
所述保护层的材质为无机硅酸盐材料或无机有机复合材料。
作为上述太阳电池组件一种更好的选择,所述的保护层厚度为0.01~5mm。
作为上述太阳电池组件一种更好的选择,所述太阳电池还包括封装层,其位于发电层和保护层之间,所述封装层材料包括乙烯-辛烯共聚物或乙烯-醋酸乙烯酯共聚物。
作为上述太阳电池组件一种更好的选择,所述封装层材料进一步包括乙烯-四氟乙烯共聚物(ETFE)材料,所述ETFE材料位于乙烯-辛烯共聚物或乙烯-醋酸乙烯酯共聚物和保护层之间。
作为上述太阳电池组件一种更好的选择,所述封装材料的厚度为0.05mm~3mm。
所述的封装层可以根据需要而设置,在本发明的实施例中,所使用的封装层材料均可以去除。所述的封装层可以进一步延长太阳电池的寿命。
所述的保护层在300~1300nm上的加权平均透过率为0-79%,本领域技术人员可以根据需要对此进行进一步的改进,如通过在制备保护层的原料内添加或者掺杂特定的组分,从而使得其在特定的波长具有吸收或者保持高的透过率,使其在可见光波长范围内,达到透明或者半透明的特性,或者具有指定透过率(如50%)的特点,更加具体的波长范围可以选择300-360,360-400,400-500,500-600,600-700,700-760,760-860,860-1300nm,并通过改变原料成分使得保护层形成不同的颜色。
作为上述太阳电池组件一种更好的选择,所述发电层的表面还有一层厚度不超过10nm的石墨烯薄膜。所述的石墨烯薄膜可以进一步的改进发电层的性能。
所述的光伏电池组件具有如下的性能:
1)轻薄;当基底、保护层和发电层都选择较小厚度的材料时,整体的太阳电池厚度最低可以为28μm;
2)柔性可弯曲,当基底、保护层和发电层都选择较轻薄的材料时,本发明的太阳电池具有柔性和可弯曲的特性,其具体为曲率半径可不大于20mm;
3)光电转换效率高,本发明的太阳电池组件的光电转换效率大于14%;
4)弱光效应好,本发明的太阳电池即使在弱光环境下(如阴雨天气或室内照明条件),也可以发电,只是发电效率低于正常太阳光辐照下的发电量;即使选择对可见光透过率10%的材料作为保护层,通过将其和储能单元配合,其可以实现为LED灯/量子点发光单元的功能。
本发明还提供了一种太阳电池组件,其基底为瓷砖,所述瓷砖用于装饰建筑物的外表,也可用于道路的施工,结合储能单元,可为路灯、地脚灯供电。
作为上述太阳电池组件一种更好的选择,所述太阳电池还包括绝缘密封层。所述绝缘密封层的材质可以为乙烯-辛烯共聚物(POE)或乙烯-醋酸乙烯酯共聚(EVA)。
本发明还进一步提供了上述的太阳电池组件的制备方法,包括如下的步骤:
1)将发电层附着到基体之上,并引出正负极,或者直接在基底上制备发电层,并引出正负极;
2)涂覆室温下为液态的保护层材料,经过室温固化0.5-12小时后,形成坚固的釉质保护层。
作为上述方法一种更好的选择,步骤1)还包括在引出正负极后,在其上形成封装层的步骤。
作为上述方法一种更好的选择,所述基底在制备发电层前经抛光和清洁处理,处理后的基底表面粗糙度小于100nm,接触角为5-15°。
本发明具有如下的有益效果:
1、基底来源广泛,无特殊要求,且不影响产品的制备;
2、无需真空系统,可直接在普通大气环境中制备而成,且不用添置专用设备;
3、建材同光伏领域的结合,易于规模批量化生产,且具有极大的成本优势。
附图说明
图1为新型建筑太阳电池剖面结构图,在该图中,1为基底材料(瓷砖、水泥基材、金属板、塑料膜、瓦片等);2为发电层;3为封装层;4为保护层(瓷釉);
图2为不同釉质保护层在300nm-1300nm波长范围内的透过率;
图3为所提供电池的光电转换效率。
具体实施方式
如下将结合附图对本发明进行进一步的解释和说明,其仅用作对本发明的解释而并非限制。
请参见图1,其示出了一种新型的建筑太阳电池。
从下至上,该太阳电池包括为基底材料1,薄膜太阳电池及引流条2和保护层3(釉质薄膜)。
所述的基底材料可以选择玻璃、瓷砖、水泥基材、金属板、塑料膜、瓦片等材料。
所述的薄膜太阳电池可以为多种太阳电池的核心结果,其具体可以为具有CIGS薄膜太阳电池、GaAs薄膜太阳电池、非晶硅薄膜太阳电池、CdTe薄膜太阳电池、OPV薄膜太阳电池、CZTS薄膜太阳电池或钙钛矿薄膜太阳电池的结构。
所述的薄膜最好为厚度为0.01-5mm的薄膜,较厚的薄膜会带来较好的保护效果,但是显然会使的太阳电池获得更好的保护。
所述的薄膜可以为釉质膜,可以为太阳电池设计光泽釉、半光泽釉、无光釉和碎纹釉,并且可以根据需要为釉质膜设计不同的颜色。按照本领域的通常做法,保护层应当尽量透明以使得太阳光可以最大的通过,而本发明中通过引入釉质层,并且可以对釉质层选择性的着色,从而使得太阳电池可以融入周围的环境,从而拓宽了太阳电池的应用。
本发明所选用的釉质膜最好是无机硅酸盐材料或无机有机复合材料,其组成包括O、Na、Ga、Mg、S、Si、Al、Ca、Co、K、Zr、Ba、P和B等元素中的多种,其形成可以是通过将含有这些元素的原料(如氧化物或者相应的盐,如硅酸钠、氢氧化镁、碳酸钾)在低温下反应形成釉料。
以釉料0.05MgSO4·0.05CaO·0.15ZrO·0.70Na2SiO3·0.05Al2(SO4)3的制备为例,按照上述釉料的原料成分配比准确称量各种原料,加入30-35wt%重量份的水,进行球磨,球磨时间36~40h,球磨至釉料细度250目筛余0.015%以内,即得合格釉料研磨料。
所述的原料还可以选择硅钛酸钠、石英砂、长石粉、碳酸钠、硝酸钠3.7~4.0份、冰晶石、二氧化锆、磷酸铝、硝酸钴、硝酸镍、氧化锌、碳酸钡等原料作为不同氧化物的来源。
所述的研磨料在高温下(如800-850摄氏度)烧结,并且经淬冷和粉碎得到搪瓷釉料,该釉料可以经球磨得到较细的颗粒,从而使得其可以适用于喷墨打印或者直接喷涂。
其他可以用的釉料的组分还可以为
0.06MgSO4·0.10CaO·0.12ZrO·0.64Na2SiO3·0.05Al2(SO4)3·0.03Co2O3,或0.06BaSO4·0.11CaO·0.13TiO2·0.65Na2SiO3·0.04Al2(SO4)3·0.01Co2O3,0.10BaSO4·0.10TiO2·0.75K2SiO3·0.04Al2(SO4)3·0.01Co2O3。或0.06MgSO4·0.10TiO2·0.12ZrO·0.605K2SiO3·0.085Al2(SO4)3·0.03CoCl2,或0.08BaO·0.10Ga2O3·0.12ZrO·0.565K2SiO3·0.085Al2(SO4)3·0.03CoCl2·0.02B2O3等。
在如下的实施例中,所称的水性釉可以为上述材料的任一种。
可以在上述的薄膜内添加各种搀杂物,从而使得其在特定波长范围具备透过率,如加入紫外光吸收剂为苯并三唑类紫外线吸收剂,选自2-(2ˊ-羟基-5ˊ-甲基)-苯并三唑、2-(2ˊ-羟基-3ˊ-叔丁基-5ˊ-甲基)-5-氯-苯并三唑、2-(2ˊ-羟基-3ˊ5ˊ-二叔丁基)-5-氯-苯并三唑、2'-(2'-羟基-3'-叔丁基-5'-甲基苯基)-5-氯苯并三唑、2-(2ˊ-羟基-5ˊ-叔辛基)-苯并三唑中一种或多种可以实现对于紫外光的吸收;加入氧化铟锡、氧化锡锑、三氧化钨、三氧化钼、钨青铜或具有氧缺陷的硫化铜中的一种或几种实现对于近红外光的调控;加入富勒烯衍生物PC61BM或PC71BM(参见CN106025080A)或者其他具有着色的材料实现对于可见光吸收的调控。
所述的薄膜还可以为含氟高分子化合物,所述的含氟高分子化合物典型的如聚四氟乙烯,0.01-1mm厚度的含氟高分子化合物作为保护层时,不仅可以保证透光,而且可以对太阳电池的外观做出改变。
所述的保护层的薄膜在300-1000nm上的透过率为0-79%,本领域技术人员可以根据需要对此进行进一步的改进,如通过在薄膜内添加或者掺杂特定的组分,从而使得其在特定的波长具有吸收或者保持高的透过率。请参见图2所示的釉质层材料的吸收光谱,其在300-400,400-500,500-600,600-700,700-760,760-860,860-1000nm不同波长区间至少有一处透过率为0-79%,并且随着包膜种类的差异,其对于可见光以及760-1000nm的光的透过率从上到下依次降低。
图3为一太阳电池的光电转化效率图,该电池为具有图1所示的结构,从图3可以看出,小面积的光伏电池转换效率大于14%。
实施例1.
一种太阳电池,其基底为柔性不锈钢箔,厚度为0.2mm,其上设置有发电电极层,并设置有导线引出电极。在电池层上设置有保护层,保护层的材质为水性釉,水性釉包括可溶性硅无机金属盐,其厚度为0.1mm,并且具有大理石的花纹。
其制备方法具体如下:
将柔性不锈钢箔衬底清洗干净后放入磁控溅射机中。为防止不锈钢中元素向太阳电池中扩散,先溅射一层0.5μm的WTi阻挡层。工作气体采用Ar气,溅射气压为0.7Pa,本底真空为2.0×10-3Pa,溅射时基底不加热。采用三亚层工艺制备Mo膜,第一层溅射气压为1.5Pa,第二层溅射气压为0.6Pa,第三层溅射气压为1.5Pa。在Mo膜上通过溅射方法沉积1.2~2μm的CIGS薄膜,溅射气压为0.7Pa,本底真空为1.5×10-3Pa,随后进行硒化退火处理。将硒化后的薄膜置于硫酸镉,硫脲以及氨水的混合溶液中,于70℃下沉积30~50nmCdS。接着,重新将薄膜置于溅射腔室内,工作气体采用O2+Ar,溅射气压为0.7Pa,本底真空为2.0×10-3Pa,溅射时保持基底温度为150~200℃,分别沉积本征ZnO薄膜及AZO薄膜。最后再采用蒸发方法沉积NiAl栅极,制成柔性的薄膜太阳电池板。
保护层的形成是通过喷墨打印的方式形成的,所选用的釉质层的原料包括醋酸钴、氯化亚铁、铬酸钾和次氯酸锆,通过常规的方式(通过水或者醇类溶剂溶解,并加入OP、水性丙烯酸乳液)形成釉料溶液后,按照釉料颜色的不同将其装入不同的打印机设备内,将其直接按照大理石的花纹打印,得到太阳电池。
太阳电池具有大理石的花纹,其对于500-700nm的可见光的透过率为71%,其光伏转换效率为14.6%。
实施例2.
一种太阳电池,其基底为玻璃,厚度为2.0mm,其上设置有电池层,并设置有导线引出电极。电池的制备工艺与实施例1的相似,所不同的是将CIGS薄膜换成Cu2(ZnSn)(SSe)4,薄膜的后处理工艺换为硒化或硫化。在电池层上设置有封装层和保护层,保护层的材质为水性釉,水性釉包括可溶性硅无机金属盐,其厚度为0.1mm,并且具有深褐色的着色。
可以采用类似实施例1的方法制备该太阳电池。其对于450-760nm的光的透过率为71%,其光伏转换效率为14.1%。
以其他的方式也可获得本申请的太阳电池的保护层,如将釉料溶液以喷涂、丝印、流桨的形式涂覆到电池层的表面。
实施例3.
一种太阳电池,其基底为瓷砖,厚度为2.0mm,其上设置有电池层,并设置有导线引出电极。电池层具有CdTe太阳能电池结构,具体制备工艺如下:先将清洗干净的玻璃基底置于溅射仪中,工作气体为Ar气,溅射气压为0.7Pa,本底真空为1.5×10-3Pa,在玻璃上溅射沉积一层溅射透明导电氧化物氧化铟锡薄膜。随后采用丝网印刷方法将CdS浆料涂覆成薄膜,于90-120℃下烘干1-3小时,再在N2气氛下烧结0.5-2小时,烧结温度为650-710℃。接着将含有CdTe粉料的浆液印刷至CdS上烧结1小时。最后在CdTe上印刷碳电极和Ag浆作为引出电极。在电池层上设置有保护层,保护层的材质为水性釉,水性釉包括可溶性无机金属盐,其厚度为0.1mm,并且具有大理石的花纹。
可以采用将釉料溶液以喷涂、丝印、流桨的形式涂覆到电池层的表面,其对于450-760nm的光的透过率为52%,得到的电池具有不低于14.1%的光电转换效率,且其可以用于建筑的外墙。
实施例4.
一种太阳电池,其基底为氮化铝陶瓷,厚度为2.0mm,其上设置有电池层,并设置有导线引出电极。在电池层上设置有封装层和保护层,保护层的材质为聚四氟乙烯层,其厚度为0.05mm,并且表面为深灰色,且发电层的表面有不超过4层的石墨烯层。
电池的制备可以参见实施例1,石墨烯层可以通过低温的方式形成,为了避免对于电极层进行干扰,石墨烯层应当在不高于400℃的低温下形成。
本实施例得到的电池其对于450-760nm的光的透过率为21%,具有不低于14.0%的光电转换效率,且其可以用于建筑的外墙。
实施例5.
一种太阳电池,其基底为聚酰亚胺薄膜PI,其上设置有电池层,并设置有导线引出电极。在电池层上设置有封装层和保护层,保护层的材质为聚四氟乙烯层,其厚度为0.05mm,并且表面为米黄色,且聚四氟乙烯的表面有不超过10层的石墨烯层。
电池的制备可以参见实施例1,石墨烯层可以通过低温的方式形成,为了避免对于电极层进行干扰,石墨烯层应当在不高于400℃的低温下形成。
本实施例得到的电池其对于450-760nm的光的透过率为5%,具有不低于14.2%的光电转换效率。
实施例6.
一种太阳电池,其基底为搪瓷,其上设置有电池层,并设置有导线引出电极。在电池层上设置有保护层,保护层的材质为聚四氟乙烯层,其厚度为0.6mm,并且表面为白色,且聚四氟乙烯的表面有不超过15层的石墨烯层。
电池的制备可以参见实施例1,石墨烯层可以通过低温的方式形成,为了避免对于电极层进行干扰,石墨烯层应当在不高于400℃的低温下形成。
本实施例得到的电池其对于450-760nm的光的透过率为76%,具有不低于14.2%的光电转换效率。
最后所应说明的是,以上实施例仅用以说明本发明的技术方案而非限制。尽管参照实施例对本发明进行了详细说明,本领域的普通技术人员应当理解,对本发明的技术方案进行修改或者等同替换,都不脱离本发明技术方案的精神和范围,其均应涵盖在本发明的权利要求范围当中。
Claims (10)
1.一种用于建筑领域的太阳电池组件,所述太阳电池包括基底、发电层和保护层;
所述发电层设置在基底上,所述保护层覆盖于发电层上;
所述基底为玻璃、金属板、水泥基板材、柔性塑料薄膜、瓷砖和瓦片;
所述保护层在300nm~1300nm波长范围内加权平均透过率为0~79%。
2.根据权利要求1所述的太阳电池组件,其特征在于:所述基底具有0.01mm~5cm的厚度。
3.根据权利要求1所述的太阳电池组件,其特征在于:所述发电层具有铜铟镓硒薄膜太阳电池、砷化镓太阳电池、晶体硅太阳电池、硅基薄膜太阳电池、碲化镉薄膜太阳电池、有机太阳电池、铜锌锡硫薄膜太阳电池或钙钛矿薄膜太阳电池的结构。
4.根据权利要求1所述的太阳电池组件,其特征在于:所述的保护层的材质为无机硅酸盐材料或无机有机复合材料。
5.根据权利要求1所述的太阳电池组件,其特征在于:所述的保护层厚度为0.01~5mm。
6.根据权利要求1所述的太阳电池组件,其特征在于:所述太阳电池还包括封装层,其位于发电层和保护层之间,所述封装层材料包括乙烯-辛烯共聚物或乙烯-醋酸乙烯酯共聚物。
7.根据权利要求6所述的太阳电池组件,其特征在于:所述封装材料的厚度为0.05mm~3mm。
8.制备1-7任一所述的太阳电池组件的方法,包括如下的步骤:
1)将发电层附着到基体之上,并引出正负极,或者直接在基底上制备发电层,并引出正负极;
2)涂覆室温下为液态的保护层材料,经过室温固化8-12小时后,形成坚固的釉质保护层。
9.根据权利要求8所述的方法,其特征在于,所述基底在制备发电层前需经抛光和清洁处理,处理后的基底表面粗糙度小于100nm,接触角为5~15°。
10.根据权利要求8所述的方法,其特征在于,步骤1)还包括在引出正负极后,在其上形成封装层的步骤。
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JP2021512508A (ja) | 2021-05-13 |
KR20200104410A (ko) | 2020-09-03 |
CA3089650C (en) | 2023-06-27 |
EP3751623A1 (en) | 2020-12-16 |
CA3089650A1 (en) | 2019-08-15 |
WO2019154277A1 (zh) | 2019-08-15 |
US20200403557A1 (en) | 2020-12-24 |
EP3751623A4 (en) | 2022-02-09 |
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