JP2010517291A - ドープされたナノ粒子半導体電荷輸送層 - Google Patents

ドープされたナノ粒子半導体電荷輸送層 Download PDF

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JP2010517291A
JP2010517291A JP2009547224A JP2009547224A JP2010517291A JP 2010517291 A JP2010517291 A JP 2010517291A JP 2009547224 A JP2009547224 A JP 2009547224A JP 2009547224 A JP2009547224 A JP 2009547224A JP 2010517291 A JP2010517291 A JP 2010517291A
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doped semiconductor
transport layer
nanoparticles
situ doped
semiconductor
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JP2010517291A5 (enExample
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ブライアン カーエン，キース
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イーストマン コダック カンパニー
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3461—Nanoparticles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
    • Y10S977/892—Liquid phase deposition
JP2009547224A 2007-01-29 2007-12-13 ドープされたナノ粒子半導体電荷輸送層 Pending JP2010517291A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/668,041 US7494903B2 (en) 2007-01-29 2007-01-29 Doped nanoparticle semiconductor charge transport layer
PCT/US2007/025518 WO2008130396A2 (en) 2007-01-29 2007-12-13 Doped nanoparticle semiconductor charge transport layer

Publications (2)

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JP2010517291A true JP2010517291A (ja) 2010-05-20
JP2010517291A5 JP2010517291A5 (enExample) 2010-12-09

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JP2009547224A Pending JP2010517291A (ja) 2007-01-29 2007-12-13 ドープされたナノ粒子半導体電荷輸送層

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Country Link
US (1) US7494903B2 (enExample)
EP (1) EP2126965A2 (enExample)
JP (1) JP2010517291A (enExample)
TW (1) TWI420572B (enExample)
WO (1) WO2008130396A2 (enExample)

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WO2018173707A1 (ja) * 2017-03-21 2018-09-27 富士フイルム株式会社 半導体粒子、分散物、フィルム、光学フィルタ、建築用部材、及び、放射冷却装置

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US7804238B2 (en) * 2004-08-31 2010-09-28 Nissan Motor Co., Ltd. Functional thin-film element, producing method thereof, and article using functional thin-film element
JP2009526370A (ja) * 2006-02-09 2009-07-16 キユーデイー・ビジヨン・インコーポレーテツド 半導体ナノ結晶およびドープされた有機材料を含む層を含むデバイスおよび方法
CN101622319B (zh) 2007-01-03 2013-05-08 内诺格雷姆公司 基于硅/锗的纳米颗粒油墨、掺杂型颗粒、用于半导体应用的印刷和方法
US20110031452A1 (en) * 2007-11-28 2011-02-10 Todd Krauss Nanoparticles Having Continuous Photoluminescence
US20110076839A1 (en) * 2009-09-29 2011-03-31 Xiaofan Ren Making films composed of semiconductor nanocrystals
US20110073835A1 (en) * 2009-09-29 2011-03-31 Xiaofan Ren Semiconductor nanocrystal film
US8575911B2 (en) * 2010-06-28 2013-11-05 Virginia Tech Intellectual Properties, Inc. Digital hybrid V2 control for buck converters
WO2012071107A1 (en) * 2010-11-23 2012-05-31 Qd Vision, Inc. Device including semiconductor nanocrystals & method
TW201405828A (zh) 2012-07-31 2014-02-01 E Ink Holdings Inc 顯示面板、薄膜電晶體及其製造方法

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JP2003286292A (ja) * 2002-01-28 2003-10-10 Mitsubishi Chemicals Corp 半導体超微粒子及びそれを含有してなる薄膜状成形体
US20060237719A1 (en) * 2002-10-30 2006-10-26 Hewlett-Packard Development Company, L.P. Electronic components
US20060292777A1 (en) * 2005-06-27 2006-12-28 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
JP2008515747A (ja) * 2004-10-04 2008-05-15 ライプニッツ−インスティトゥート フィア ノイエ マテリアーリエン ゲマインニュッツィゲ ゲゼルシャフト ミット ベシュレンクタ ハフトゥンク カスタムな表面化学を有するナノ粒子及び対応するコロイドの製造方法

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US6126740A (en) * 1995-09-29 2000-10-03 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
US6918946B2 (en) * 2001-07-02 2005-07-19 Board Of Regents, The University Of Texas System Applications of light-emitting nanoparticles
EP1540741B1 (en) 2002-09-05 2014-10-29 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US7294449B1 (en) * 2003-12-31 2007-11-13 Kovio, Inc. Radiation patternable functional materials, methods of their use, and structures formed therefrom
US7250461B2 (en) * 2004-03-17 2007-07-31 E. I. Du Pont De Nemours And Company Organic formulations of conductive polymers made with polymeric acid colloids for electronics applications, and methods for making such formulations
GB0409877D0 (en) * 2004-04-30 2004-06-09 Univ Manchester Preparation of nanoparticle materials
TWI406890B (zh) * 2004-06-08 2013-09-01 Sandisk Corp 奈米結構之沉積後包封：併入該包封體之組成物、裝置及系統
US8530589B2 (en) * 2007-05-04 2013-09-10 Kovio, Inc. Print processing for patterned conductor, semiconductor and dielectric materials

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2003286292A (ja) * 2002-01-28 2003-10-10 Mitsubishi Chemicals Corp 半導体超微粒子及びそれを含有してなる薄膜状成形体
US20060237719A1 (en) * 2002-10-30 2006-10-26 Hewlett-Packard Development Company, L.P. Electronic components
JP2008515747A (ja) * 2004-10-04 2008-05-15 ライプニッツ−インスティトゥート フィア ノイエ マテリアーリエン ゲマインニュッツィゲ ゲゼルシャフト ミット ベシュレンクタ ハフトゥンク カスタムな表面化学を有するナノ粒子及び対応するコロイドの製造方法
US20060292777A1 (en) * 2005-06-27 2006-12-28 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018173707A1 (ja) * 2017-03-21 2018-09-27 富士フイルム株式会社 半導体粒子、分散物、フィルム、光学フィルタ、建築用部材、及び、放射冷却装置
JPWO2018173707A1 (ja) * 2017-03-21 2019-11-07 富士フイルム株式会社 半導体粒子、分散物、フィルム、光学フィルタ、建築用部材、及び、放射冷却装置
CN110475916A (zh) * 2017-03-21 2019-11-19 富士胶片株式会社 半导体粒子、分散物、薄膜、滤光器、建筑用部件及辐射冷却装置
US11579347B2 (en) 2017-03-21 2023-02-14 Fujifilm Corporation Semiconductor particles, dispersion, film, optical filter, building member, and radiant cooling device

Also Published As

Publication number Publication date
US7494903B2 (en) 2009-02-24
EP2126965A2 (en) 2009-12-02
US20080182391A1 (en) 2008-07-31
TWI420572B (zh) 2013-12-21
TW200849335A (en) 2008-12-16
WO2008130396A2 (en) 2008-10-30
WO2008130396A3 (en) 2009-04-09

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