JP2010517291A - ドープされたナノ粒子半導体電荷輸送層 - Google Patents

ドープされたナノ粒子半導体電荷輸送層 Download PDF

Info

Publication number
JP2010517291A
JP2010517291A JP2009547224A JP2009547224A JP2010517291A JP 2010517291 A JP2010517291 A JP 2010517291A JP 2009547224 A JP2009547224 A JP 2009547224A JP 2009547224 A JP2009547224 A JP 2009547224A JP 2010517291 A JP2010517291 A JP 2010517291A
Authority
JP
Japan
Prior art keywords
doped semiconductor
transport layer
nanoparticles
situ doped
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009547224A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010517291A5 (enExample
Inventor
ブライアン カーエン，キース
Original Assignee
イーストマン コダック カンパニー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by イーストマン コダック カンパニー filed Critical イーストマン コダック カンパニー
Publication of JP2010517291A publication Critical patent/JP2010517291A/ja
Publication of JP2010517291A5 publication Critical patent/JP2010517291A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
    • Y10S977/892—Liquid phase deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Luminescent Compositions (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
JP2009547224A 2007-01-29 2007-12-13 ドープされたナノ粒子半導体電荷輸送層 Pending JP2010517291A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/668,041 US7494903B2 (en) 2007-01-29 2007-01-29 Doped nanoparticle semiconductor charge transport layer
PCT/US2007/025518 WO2008130396A2 (en) 2007-01-29 2007-12-13 Doped nanoparticle semiconductor charge transport layer

Publications (2)

Publication Number Publication Date
JP2010517291A true JP2010517291A (ja) 2010-05-20
JP2010517291A5 JP2010517291A5 (enExample) 2010-12-09

Family

ID=39668467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009547224A Pending JP2010517291A (ja) 2007-01-29 2007-12-13 ドープされたナノ粒子半導体電荷輸送層

Country Status (5)

Country Link
US (1) US7494903B2 (enExample)
EP (1) EP2126965A2 (enExample)
JP (1) JP2010517291A (enExample)
TW (1) TWI420572B (enExample)
WO (1) WO2008130396A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018173707A1 (ja) * 2017-03-21 2018-09-27 富士フイルム株式会社 半導体粒子、分散物、フィルム、光学フィルタ、建築用部材、及び、放射冷却装置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7804238B2 (en) * 2004-08-31 2010-09-28 Nissan Motor Co., Ltd. Functional thin-film element, producing method thereof, and article using functional thin-film element
JP2009526370A (ja) * 2006-02-09 2009-07-16 キユーデイー・ビジヨン・インコーポレーテツド 半導体ナノ結晶およびドープされた有機材料を含む層を含むデバイスおよび方法
US7892872B2 (en) 2007-01-03 2011-02-22 Nanogram Corporation Silicon/germanium oxide particle inks, inkjet printing and processes for doping semiconductor substrates
US20110031452A1 (en) * 2007-11-28 2011-02-10 Todd Krauss Nanoparticles Having Continuous Photoluminescence
US20110076839A1 (en) * 2009-09-29 2011-03-31 Xiaofan Ren Making films composed of semiconductor nanocrystals
US20110073835A1 (en) * 2009-09-29 2011-03-31 Xiaofan Ren Semiconductor nanocrystal film
US8575911B2 (en) * 2010-06-28 2013-11-05 Virginia Tech Intellectual Properties, Inc. Digital hybrid V2 control for buck converters
WO2012071107A1 (en) * 2010-11-23 2012-05-31 Qd Vision, Inc. Device including semiconductor nanocrystals & method
TW201405828A (zh) 2012-07-31 2014-02-01 E Ink Holdings Inc 顯示面板、薄膜電晶體及其製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003286292A (ja) * 2002-01-28 2003-10-10 Mitsubishi Chemicals Corp 半導体超微粒子及びそれを含有してなる薄膜状成形体
US20060237719A1 (en) * 2002-10-30 2006-10-26 Hewlett-Packard Development Company, L.P. Electronic components
US20060292777A1 (en) * 2005-06-27 2006-12-28 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
JP2008515747A (ja) * 2004-10-04 2008-05-15 ライプニッツ−インスティトゥート フィア ノイエ マテリアーリエン ゲマインニュッツィゲ ゲゼルシャフト ミット ベシュレンクタ ハフトゥンク カスタムな表面化学を有するナノ粒子及び対応するコロイドの製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6126740A (en) * 1995-09-29 2000-10-03 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
US6918946B2 (en) * 2001-07-02 2005-07-19 Board Of Regents, The University Of Texas System Applications of light-emitting nanoparticles
US6878871B2 (en) 2002-09-05 2005-04-12 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US7294449B1 (en) * 2003-12-31 2007-11-13 Kovio, Inc. Radiation patternable functional materials, methods of their use, and structures formed therefrom
US7250461B2 (en) * 2004-03-17 2007-07-31 E. I. Du Pont De Nemours And Company Organic formulations of conductive polymers made with polymeric acid colloids for electronics applications, and methods for making such formulations
GB0409877D0 (en) * 2004-04-30 2004-06-09 Univ Manchester Preparation of nanoparticle materials
TWI406890B (zh) * 2004-06-08 2013-09-01 Sandisk Corp 奈米結構之沉積後包封：併入該包封體之組成物、裝置及系統
US8530589B2 (en) * 2007-05-04 2013-09-10 Kovio, Inc. Print processing for patterned conductor, semiconductor and dielectric materials

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003286292A (ja) * 2002-01-28 2003-10-10 Mitsubishi Chemicals Corp 半導体超微粒子及びそれを含有してなる薄膜状成形体
US20060237719A1 (en) * 2002-10-30 2006-10-26 Hewlett-Packard Development Company, L.P. Electronic components
JP2008515747A (ja) * 2004-10-04 2008-05-15 ライプニッツ−インスティトゥート フィア ノイエ マテリアーリエン ゲマインニュッツィゲ ゲゼルシャフト ミット ベシュレンクタ ハフトゥンク カスタムな表面化学を有するナノ粒子及び対応するコロイドの製造方法
US20060292777A1 (en) * 2005-06-27 2006-12-28 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018173707A1 (ja) * 2017-03-21 2018-09-27 富士フイルム株式会社 半導体粒子、分散物、フィルム、光学フィルタ、建築用部材、及び、放射冷却装置
JPWO2018173707A1 (ja) * 2017-03-21 2019-11-07 富士フイルム株式会社 半導体粒子、分散物、フィルム、光学フィルタ、建築用部材、及び、放射冷却装置
CN110475916A (zh) * 2017-03-21 2019-11-19 富士胶片株式会社 半导体粒子、分散物、薄膜、滤光器、建筑用部件及辐射冷却装置
US11579347B2 (en) 2017-03-21 2023-02-14 Fujifilm Corporation Semiconductor particles, dispersion, film, optical filter, building member, and radiant cooling device

Also Published As

Publication number Publication date
EP2126965A2 (en) 2009-12-02
WO2008130396A3 (en) 2009-04-09
WO2008130396A2 (en) 2008-10-30
US7494903B2 (en) 2009-02-24
TWI420572B (zh) 2013-12-21
US20080182391A1 (en) 2008-07-31
TW200849335A (en) 2008-12-16

Similar Documents

Publication Publication Date Title
US7605062B2 (en) Doped nanoparticle-based semiconductor junction
JP5171848B2 (ja) エクスサイチュドープされたナノ粒子半導体輸送層
JP2010517291A (ja) ドープされたナノ粒子半導体電荷輸送層
CN100361320C (zh) 含p型掺杂剂的氧化锌膜及其制造方法
US20110240099A1 (en) Photovoltaic nanowire device
EP1563547B1 (en) Nanostructure, electronic device having such nanostructure and method of preparing nanostructure
Sun et al. Electrical and electroluminescence properties of As-doped p-type ZnO nanorod arrays
Liu et al. Solution processed CdTe/CdSe nanocrystal solar cells with more than 5.5% efficiency by using an inverted device structure
CN100485977C (zh) 发光二极管
JP7551631B2 (ja) シーディングまたは触媒を使わずにパルスレーザー堆積法によって成長させた無転位半導体ナノ構造
US20110073835A1 (en) Semiconductor nanocrystal film
US20110076839A1 (en) Making films composed of semiconductor nanocrystals
Yim et al. Synthesis and Ex situ doping of ZnTe and ZnSe nanostructures with extreme aspect ratios
KR101830801B1 (ko) ZnO 나노로드의 재성장을 위한 증기가둠 대면 어닐링 방법
Mosca et al. Chemical bath deposition as a simple way to grow isolated and coalesced ZnO nanorods for light-emitting diodes fabrication
CN113540299B (zh) 一种基于p-GaN/CsPbBr3/n-ZnO异质结的发光二极管及制备方法
Liu et al. Light-Emitting Diodes Based on p-GaN/i-ZnO/n-ZnO Heterojunctions
Kononenko et al. Study of optical, electrical and magnetic properties of composite nanomaterials on the basis of broadband oxide semiconductors
Chang et al. Growth and characterization of ZnSe/CdSe multiquantum disks
Kumar et al. Thin film growth, electrical transport and Ohmic contact studies of p-ZnO
Djurisic et al. ZnO nanorod heterojunctions and LEDs
Ling et al. Nanorod‐form ZnO‐homojunction ultraviolet light‐emitting diodes
Willander et al. ZnO Nanowire‐Based LEDs

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101019

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20101019

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120523

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120529

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20121106